LL4154 SURFACE MOUNT FAST SWITCHING DIODE Features · · · Fast Switching Speed Suitable for General Logic Applications High Conductance C B A Mechanical Data · · · · · Case: MiniMELF, Glass Terminals: Solderable per MIL-STD-202, Method 208 Marking: Cathode Band Only Polarity: Cathode Band Weight: 0.05 grams (approx.) MiniMELF Dim Min Max A 3.30 3.70 B 1.30 1.60 C 0.28 0.50 All Dimensions in mm Maximum Ratings @ TA = 25°C unless otherwise specified Characteristic Symbol LL4154 Unit VRM 35 V VRRM VRWM VR 25 V Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage VR(RMS) 18 V IO 150 mA IFSM 0.5 2.0 A Pd 500 mW RqJA 300 K/W Tj, TSTG -65 to +175 °C Average Rectified Output Current (Note 1) Non-Repetitive Peak Forward Surge Current @ t £ 1.0s @ t = 1.0ms Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Air (Note 1) Operating and Storage Temperature Range Electrical Characteristics Characteristic Maximum Forward Voltage Drop @ TA = 25°C unless otherwise specified Symbol Min Max Unit Test Condition VFM ¾ 1.0 V IF = 30mA VR = 25V VR = 25V, Tj = 150°C Maximum Peak Reverse Current IRM ¾ 100 nA mA Junction Capacitance Cj ¾ 4.0 pF VR = 0V, f = 1.0MHz Reverse Recovery Time trr ¾ 4.0 ns IF = IR = 10mA, Irr = 0.1 x IR, RL = 100W Note: 1. Valid provided that electrodes are kept at ambient temperature. DS30071 Rev. A-2 1 of 2 LL4154 1000 IF, FORWARD CURRENT (mA) Pd, POWER DISSIPATION (mW) 500 400 300 200 100 0 0 100 100 0.1 0 1 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Derating Curve 10,000 IR, LEAKAGE CURRENT (nA) RELATIVE CAPACITANCE RATIO [CTOT(VR)/CTOT(0V)] 2 VF, FORWARD VOLTAGE (V) Fig. 2 Forward Characteristics Tj = 25°C f = 1.0MHz 1.1 Tj = 25°C 1.0 0.01 200 Tj = 100°C 10 1.0 0.9 0.8 1,000 100 10 0.7 VR = 25V 0 2 4 6 8 10 VR, REVERSE VOLTAGE (V) Fig. 3 Relative Capacitance Variation DS30071 Rev. A-2 1 0 100 200 Tj, JUNCTION TEMPERATURE (°C) Fig. 4 Leakage Current vs Junction Temperature 2 of 2 LL4154