HITACHI HA12231FP

HA12231FP
Audio Signal Processor for Car Deck (PB 1 Chip)
ADE-207-327A (Z)
2nd Edition
Jan. 2001
Description
HA12231FP is silicon monolithic bipolar IC providing PB equalizer system and music sensor system in
one chip.
Functions
•
•
•
•
PB equalizer
Music sensor
Line amp.
Line mute
× 2 channel
× 1 channel
× 2 channel
× 2 channel
Features
•
•
•
•
•
•
No use external parts for PB equalizer. (Fixed characteristics built-in)
Available to change music sensing level by external resistor.
Available to change frequency response of music sensor by external capacitor.
Different type of PB equalizer characteristics selection (120 µs/70 µs) is available.
Line mute ON/OFF is avalable.
This IC is strong for a cellular phone noise.
Ordering Information
Functions
Product
Package
PBOUT-Level
PB-EQ
Music Sensor
Mute
HA12231FP
FP-20DA
450 mVrms
❍
❍
❍
HA12231FP
Pin Description, Equivalent Circuit (VCC = 9 V, A system of single supply voltage,
Ta = 25°C, No Signal, The value in the table shows typical value.)
Pin No.
Pin Name
Note
16
TAI(L)
V = VCC/2
Equivalent Circuit
Description
Tape input
V
100 k
VCC/2
5
TAI(R)
14
RIP
V = VCC/2
VCC
Ripple filter
V
GND
13
MS DET
V = VCC
Time constant pin for rectifier
GND
15
PBOUT(L)
V = VCC/2
VCC
PB output
V
GND
6
PBOUT(R)
1
VREF
V = VCC/2
VCC
Reference output
V
GND
17
EQOUT(L)
4
EQOUT(R)
Note: MS: Music Sensor
2
V = VCC/2
Equalizer output (120 µ)
HA12231FP
Pin Description, Equivalent Circuit (VCC = 9 V, A system of single supply voltage,
Ta = 25°C, No Signal, The value in the table shows typical value.) (cont.)
Pin No.
Pin Name
Note
Equivalent Circuit
Description
11
VCC

Power supply
19
FIN(L)

Equalizer input
V
18
RIN(L)
3
RIN(R)
2
FIN(R)
9
Mute

Mode control input
22 k
100 k
GND
10
FOR/REV
8
120/70
12
MS

I
200
MS VCC
MS output (to MPU) *
100 k
D GND
7
MS GV
V = VCC/2
MS gain pin *
V
90 k
20
GND

GND pin
Note: MS: Music Sensor
3
4
5
6
7
+
8
9
10
FOR/REV
+
MA
−
Mute
14
120/70
LPF
S/R
4
15
MS GV
+
16
PBOUT(R)
3
17
TAI(R)
2
18
EQOUT(R)
1
19
RIN(R)
20
FIN(R)
VREF
13
−
12
VCC
DVCC
MS
MS DET
RIP
PBOUT(L)
TAI(L)
EQOUT(L)
RIN(L)
FIN(L)
GND
HA12231FP
Block Diagram
+
11
I.A.
MS
RECT
−
+
I.A.
+
HA12231FP
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Rating
Unit
Supply voltage
VCC Max
15
V
Power dissipation
Pd
400
mW
Operating temperature
Topr
−40 to +85
°C
Storage temperature
Tstg
−55 to +125
°C
Note
Ta ≤ 85°C
5
6

12


1k

Note: 1. VCC = 7.2 V

TAI

IOH
Mute
VIL
VIH
MS output leak current
MUTE attenuation
Control voltage
0
5k
TAI
VOL
MS output low level

5k
PBOUT
MSOUT
PBOUT
MSOUT
MSOUT
PBOUT

TAI
VON
MS sensing level
0
(0)
1k
(1k)
FIN/RIN EQOUT
FIN/RIN EQOUT
No signal
Rg = 680Ω, Din-Audio Filter
120µs
120µs
70µs
THD = 1%
0.1
1.2
1.0
1.5
 0.0 2.0
70.0 80.0 
−0.2  1.0
3.5  VCC

L

16
16
16
19
5

5

µA
dB
V
5
V
dB

16

16
16
%
2/3 19/18
0.5
2.0 µVrms 2/3 19/18
40.0 43.0
36.0 39.0
32.0 35.0
600 
R

5
5
5
2
12
6

6
6
4
4
12
15

15
15
17
17


8, 9,
10
12
12






11




Application Terminal
Input
Output
R
L
 
6
15
6
15
6
15
6→ 15→
15
6
2/3 19/18 4
17
dB
2
4
17
dB
19
2
4
17
dB
19
mVrms 2/3 19/18 4
17
Typ Max Unit
mA
6.0
9
23.5 24.5 dB
13.0 
dB
0.05 0.3
%
60.0 
dB
−18.0 −14.0 −10.0


37.0
33.0
29.0
300
0
0
0

1k
10k
10k
1k
FIN/RIN
FIN
FIN
FIN/RIN
EQOUT
EQOUT
EQOUT
EQOUT
Min

22.5
12.0

50.0
Specification
∗1
∗1
Remark
(Ta = 25°C, VCC = 9 V, PBOUT Level = 450 mVrms (= 0 dB))
PBOUT
INPUT OUTPUT fin(Hz) level(dB)
Other



No signal

TAI
PBOUT
1k
0

TAI
PBOUT
1k
THD = 1%
0
TAI
PBOUT
1k
FIN
PBOUT
1k
12
THD-EQ
VN
GV EQ 1k
GV EQ 10k(1)
GV EQ 10k(2)
VOM
IQ
GVIA
Vomax
THD
CT RL
Symbol
PB-EQ THD
Noise voltage level converted
in input
PB-EQ maximum output
PB-EQ gain
Item
Quiescent current
Input AMP. gain
Signal handling
T.H.D.
Channel separation
IC Condition
Test Condition
HA12231FP
Electrical Characteristics
AUDIO SG
SW1
Notes: 1. Resistor tolerance ±1%
2. Capacitor tolerance ±1%
3. Unit R: Ω, C: F
AC VM1
SW2
ON OFF
VREF
TAI
GND
Rch
FIN(R)
Lch
FIN(L)
+
RIN(R)
R1
680
C2
22µ
EQOUT(R)
+
RIN(L)
C4
0.47µ
C3
0.1µ
TAI(R)
R3
R2 5.1k
680
R4
5.1k
EQOUT(L)
R5
10k
+
R6
10k
C5
2.2µ
SW5
EQ
7
SW7
R7
24k
C6
0.01µ
PB
+
6
PBOUT(R)
5
MS GV
4
PBOUT(L)
13
RECT
SW9
120
8
R8
3.9k
12
R9
330k
9
70
EXT
SW10
OFF
120/70
3
+
MA
−
C8
0.33µ
MS
11
+C7
100µ
REV
EXT
10
ON
EXT
SW11
FOR
Mute
SW4
C1
22µ
2
LPF
14
RIP
I.A.
I.A.
15
C9
1µ
MS DET
−
16
SW6
C10
2.2µ
R10
10k
MS
+
17
C12
0.1µ
TAI(L)
−
+
18
R14
680 R12
5.1k
R13
5.1k
SW8
FOR/REV
1
19
C13
22µ
R15
680
C11
0.47µ
PB
VCC
FIN
RIN
20
C14
22µ
+
RIN
FIN
+
SW3
+
TAI
+
R11
10k
+
EQ
DC SOURCE3
DC SOURCE2
DC SOURCE1
Rch
Lch
SW13
Oscillo
scope
Distortion
analyzer
AC VM2
DC VM
SW12
Noise
meter
NOISE METER
WITH CCIR/ARM FILTER
AND DIN/AUDIO FILTER
PBR
PBL
MS
HA12231FP
Test Circuit
7
HA12231FP
Functional Description
Power Supply Range
HA12231FP is designed to operate on single supply only.
Table 1
Supply Voltage Range
Product
Single Supply
HA12231FP
7.2 V to 12.0 V
Reference Voltage
HA12231FP provides the reference voltage of half the supply voltage that is the signal grounds. As the
peculiarity of this device, the capacitor for the ripple filter is very small about 1/100 compared with their
usual value. The block diagram is shown as figure 1.
11 VCC
+
−
20
14 RIP
+
C1
1µ
+
−
MS block
1 VREF
to Line Amp.
: Internal reference voltage
Figure 1 The Block Diagram of Reference Supply Voltage
8
HA12231FP
Operating Mode Control
HA12231FP provides fully electronic switching circuits. And each operating mode control are controlled
by parallel data (DC voltage).
When a power supply of this IC is cut off, for a voltage, in addition to a mode control terminal even though
as do not destruct it, in series for resistance.
Table 2
Threshold Voltage (VTH)
Pin No.
Lo
Hi
Unit
Test Condition
8, 9, 10
−0.2 to 1.0
3.5 to VCC
V
Input Pin
Measure
V
Table 3
Switching Truth Table
Pin No.
Pin Name
Low
High
8
120/70
120 µ (Normal)
70 µ (Metal or Chrome)
9
Mute
Mute OFF
Mute ON
10
FOR/REV
Forward
Reverse
Notes: 1. Each pins are on pulled down with 100 kΩ internal resistor.
Therefore, it will be low-level when each pins are open.
2. Over shoot level and under shoot level of input signal must be the standardized.
(High: VCC, Low: −0.2 V)
3. Reducing pop noise is so much better for 10 kΩ to 22 kΩ resisitor and 1 µF to 22 µF capacitor
shown figure 2.
Input Pin
10 to 22 kΩ
+
MPU
1 to 22 µF
Figure 2 Interface for Reduction of Pop Noise
9
HA12231FP
Input Block Diagram and Level Diagram
PBOUT Level
HA12231FP: 450 mVrms (−4.7 dBs)
C1
0.1µF
60mVrms
(−22.2dBs)
EQOUT
EQ Amp.
R2
R1
5.1kΩ 5.1kΩ
+ −
FIN
RIN
TAI
30mVrms
(−28.2dBs)
the other
channel
+ Input Amp.
−
23.5dB
0dB
PBOUT
MUTE
PBIN
0.6mVrms
(−62.2dBs)
VREF
The each level shown above is typical value
when offering PBOUT level to PBOUT pin.
(EQ Amp. Gv = 40 dB, f = 1 kHz)
Figure 3 Input Block Diagram
Adjustment of Playback Reference Operate Level
After replace R1 and R2 with a half-fix volume of 10 kΩ, adjust playback reference operate level.
10
HA12231FP
The Sensitivity Adjustment of Music Sensor
Adjusting MS Amp. gain by external resistor, the sensitivity of music sensor can set up. The music sensor
block diagram is shown in figure 4, and frequency response is shown in figure 5.
S/R
VCC
16
REX2
REX1
CEX2
+CEX1
7
MS Gv
TAI(L)
+ C1
R1
330kΩ
0.33µF
13
MS DET
23.5dB
90kΩ
−6dB
LPF
25kHz
−
+
DVCC
33.3kΩ
RECT
−3.5dB
MS Amp.
RL
MS
12
Micro
computer
GND
20
66.7kΩ
23.5dB
Figure 4 Music Sensor Block Diagram
GV2
GV (dB)
5
TAI(R)
Repeat mode (REP)
f1
GV1
10
f4
f3
f2
Search mode (SER)
100
1k
f (Hz)
10k
25k
100k
Figure 5 Frequency Response
11
HA12231FP
1. Search mode
GV1 = (23.5dB − 3.5dB) + 20log 1 + 90k
[dB]
REX2
1
f1 =
[Hz], f2 = 25k [Hz]
2π ⋅ CEX2 ⋅ REX2
2. Repeat mode
GV2 = (23.5dB − 3.5dB) + 20log 1 + 90k
[dB]
REX1
1
f3 =
[Hz], f4 = 25k [Hz]
2π ⋅ CEX1 ⋅ REX1
The sensitivity of music sensor (S) is computed by the formula mentioned below.
S = 12.7 − GV
[dB]
S is 6 dB down in case of one-side channel.
Notes: 1. Search mode: GV1, Repeat mode: G V2
2. Standard level of TAI pin (Dolby level correspondence) = 30 mVrms
3. Standard sensing level of music sensor = 130 mVrms
Item
REX1, 2
CEX1, 2
GV1, 2
f1, 3
f2, 4
S
(one side
channel)
S
(both
channel)
Search mode
24 kΩ
0.01 µF
33.5 dB
663 Hz
25 kHz
−14.8 dB
−20.8 dB
Repeat mode
2.4 kΩ
1 µF
51.7 dB
66.3 Hz
25 kHz
−33.0 dB
−39.0 dB
Note: This MS presented hysteresis lest MS(OUT) terminal should turn over again High level or Low level,
in case of thresh S level constantly.
Music Sensor Time Constant
1. Sensing no signal to signal (Attack) is determined by C1, 0.01 µF to 1 µF capacitor C1 can be
applicable.
2. Sensing signal to no signal (Recovery) is determined by C1 and R1, however preceding (1), 100 kΩ to 1
MΩ can be applicable.
Music Sensor Output (MS(OUT))
As for the internal circuit of music sensor block, music sensor output pin is connected to the collector of
NPN type directly, therefore, output level will be “high” when sensing no signal. And output level will be
“low” when sensing signal.
IL =
DVCC − MS(OUT)LO*
RL
* MS(OUT)LO : Sensing signal (about 1V)
Note: Supply voltage of MS(OUT) pin must be less than VCC voltage.
12
HA12231FP
Characteristic Curves
EQOUT Noise Output vs. Transmission Frequency
0
EQOUT Noise Output (dBs)
−10
EQOUT(L), VCC = 9 V,
Vin = 0 dBm, 120 µs
FIN(L)
RIN(L)
toward Cellular phone noise
−20
−30
−40
−50
−60
100
1000
Transmission Frequency (MHz)
10000
EQOUT Noise Output vs. Transmission Signal Input Level
0
EQOUT Noise Output (dBs)
−10
−20
EQOUT(L), VCC = 9 V,
120 µs, f = 900 MHz
FIN(L)
RIN(L)
toward Cellular phone noise
−30
−40
−50
−60
−70
−80
−50
−40
−30
−20
−10
0
High Frequency Input Vin (dBm)
10
20
13
HA12231FP
Quiescent Current vs. Supply Voltage
7.0
No signal
70 µ
Quiescent Current (mA)
6.5
6.0
5.5
5.0
4.5
4.0
4
6
8
10
Supply Voltage (V)
12
14
16
Input Amp. Gain vs. Frequency
25
Gain (dB)
20
15
10
5
VCC = 9 V,
TAI → PBOUT
0
10
14
100
1k
10k
Frequency (Hz)
100k
1M
HA12231FP
Total Harmonic Distortion vs. Frequency
1
TAI → PBOUT, 0 dB = 450 mVrms,
VCC = 9 V, Mute off
−10 dB
0 dB
10 dB
T.H.D. (%)
0.1
30 kHz LPF
0.01
0.001
10
100
400 Hz HPF
+
30 kHz LPF
1k
Frequency (Hz)
400 Hz HPF
+
80 kHz LPF
10k
100k
Total Harmonic Distortion vs. Output Level
10
TAI → PBOUT, 0 dB = 450 mVrms,
VCC = 9 V, Mute off
100 Hz (30 kHz LPF)
1 kHz (400 Hz HPF + 30 kHz LPF)
10 kHz (400 Hz HPF + 80 kHz LPF)
T.H.D. (%)
1
0.1
0.01
−15
−10
−5
0
5
Output Level Vout (dB)
10
15
20
15
HA12231FP
Total Harmonic Distortion vs. Supply Voltage
1
TAI → PBOUT = 450 mVrms,
Mute off
100 Hz (30 kHz LPF)
1 kHz (400 Hz HPF + 30 kHz LPF)
10 kHz (400 Hz HPF + 80 kHz LPF)
T.H.D. (%)
0.1
0.01
0.001
4
6
8
10
Supply Voltage (V)
12
14
16
12
14
16
Signal Handling
30
25
TAI → PBOUT, 0 dB = 450 mVrms,
Mute off, f = 1 kHz, T.H.D. = 1%
PBOUT(L)
PBOUT(R)
Vomax (dB)
20
15
10
5
0
4
16
6
8
10
Supply Voltage (V)
HA12231FP
Equalizer Amp. Gain vs. Frequency
70
60
EQ Gain (dB)
50
40
30
20
10
FIN → EQOUT, VCC = 9 V
120 µ
70 µ
0
10
100
1k
Frequency (Hz)
10k
100k
Signal to Noise Ratio vs. Supply Voltage
70
Signal to Noise Ratio (dB)
65
FIN → EQOUT, Vout = 0 dB = 60 mVrms,
DIN-AUDIO filter
120 µs
70 µs
60
55
50
45
40
4
6
8
10
Supply Voltage (V)
12
14
16
17
HA12231FP
Total Harmonic Distortion vs. Frequency
10
FIN → EQOUT, Vout = +20 dB,
0 dB = 60 mVrms
120 µs
70 µs
T.H.D. (%)
1
0.1
30 kHz LPF
400 Hz HPF
+
30 kHz LPF
0.01
100
1k
400 Hz HPF
+
80 kHz LPF
10k
100k
Frequency (Hz)
Total Harmonic Distortion vs. Output Level (120 µs)
100
T.H.D. (%)
10
FIN → EQOUT, 0 dB = 60 mVrms,
VCC = 9 V
100 Hz (30 kHz LPF)
1 kHz (400 Hz HPF + 30 kHz LPF)
10 kHz (400 Hz HPF + 80 kHz LPF)
1
0.1
0.01
−5
18
0
5
10
15
20
Output Level Vout (dB)
25
30
35
HA12231FP
Total Harmonic Distortion vs. Output Level (70 µs)
100
T.H.D. (%)
10
FIN → EQOUT, 0 dB = 60 mVrms,
VCC = 9 V
100 Hz (30 kHz LPF)
1 kHz (400 Hz HPF + 30 kHz LPF)
10 kHz (400 Hz HPF + 80 kHz LPF)
1
0.1
0.01
−5
0
5
10
15
20
Output Level Vout (dB)
25
30
35
Total Harmonic Distortion vs. Supply Voltage (120 µs)
10
FIN → EQOUT, Vout = 60 mVrms,
VCC = 9 V
100 Hz (30 kHz LPF)
1 kHz (400 Hz HPF + 30 kHz LPF)
10 kHz (400 Hz HPF + 80 kHz LPF)
T.H.D. (%)
1
0.1
0.01
4
6
8
10
Supply Voltage (V)
12
14
16
19
HA12231FP
Total Harmonic Distortion vs. Supply Voltage (70 µs)
10
FIN → EQOUT, Vout = 60 mVrms,
VCC = 9 V
100 Hz (30 kHz LPF)
1 kHz (400 Hz HPF + 30 kHz LPF)
10 kHz (400 Hz HPF + 80 kHz LPF)
T.H.D. (%)
1
0.1
0.01
4
6
8
10
Supply Voltage (V)
12
14
16
12
14
16
Signal Handling
45
40
FIN, RIN → EQOUT, 120 µs, 0 dB = 60 mVrms,
f = 1 kHz, T.H.D. = 1%
FIN
RIN
Vomax (dB)
35
30
25
20
15
4
20
6
8
10
Supply Voltage (V)
HA12231FP
Signal Handling
45
40
FIN, RIN → EQOUT, 70 µs, 0 dB = 60 mVrms,
f = 1 kHz, T.H.D. = 1%
FIN
RIN
Vomax (dB)
35
30
25
20
15
4
6
8
10
Supply Voltage (V)
12
14
16
Crosstalk vs. Frequency (CTRL)
0
−10
FIN → PBOUT, Vout = 12 dB (0 dB = 450 mVrms),
80 kHz LPF
L→R
R→L
Crosstalk (dB)
−20
−30
−40
−50
−60
−70
−80
10
100
1k
Frequency (Hz)
10k
100k
21
HA12231FP
Crosstalk vs. Frequency (CTRL)
0
−10
RIN → PBOUT, Vout = 12 dB (0 dB = 450 mVrms),
80 kHz LPF
L→R
R→L
Crosstalk (dB)
−20
−30
−40
−50
−60
−70
−80
10
100
1k
Frequency (Hz)
10k
100k
10k
100k
MS Amp. Sensitivity vs. Frequency
10
MS Sensing Level (dB)
0
TAI → PBOUT, VCC = 9 V,
0 dB = 450 mVrms
SER L→H
SER H→L
REP L→H
REP H→L
−10
−20
−30
−40
10
22
100
1k
Frequency (Hz)
HA12231FP
No-Signal Sensing Time vs. Resistance
No-Signal Sensing Time (ms)
1000
TAI → PBOUT, VCC = 9 V,
f = 5 kHz, MSOUT L → H
SER 0 dB
100
10
PBOUT
MSOUT
1
10k
100k
1M
10M
Resistance R10 (Ω)
Signal Sensing Time vs. Capacitance
Signal Sensing Time (ms)
1000
TAI → PBOUT, VCC = 9 V,
f = 5 kHz, MSOUT H → L
SER 0 dB
100
10
1
PBOUT
MSOUT
0.1
0.001
0.01
0.1
Capacitance C8 (µF)
1
10
23
HA12231FP
Package Dimensions
Unit: mm
12.6
13 Max
11
1
10
1.27
*0.42 ± 0.08
0.40 ± 0.06
0.10 ± 0.10
0.80 Max
*0.22 ± 0.05
0.20 ± 0.04
2.20 Max
5.5
20
0.20
7.80 +– 0.30
1.15
0° – 8°
0.70 ± 0.20
0.15
0.12 M
*Dimension including the plating thickness
Base material dimension
24
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
FP-20DA
—
Conforms
0.31 g
HA12231FP
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
Asia
Japan
:
:
:
:
http://semiconductor.hitachi.com/
http://www.hitachi-eu.com/hel/ecg
http://sicapac.hitachi-asia.com
http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Hitachi Europe GmbH
Electronic Components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Asia Ltd.
Hitachi Tower
16 Collyer Quay #20-00,
Singapore 049318
Tel : <65>-538-6533/538-8577
Fax : <65>-538-6933/538-3877
URL : http://www.hitachi.com.sg
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 585160
Hitachi Asia Ltd.
(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road,
Hung-Kuo Building,
Taipei (105), Taiwan
Tel : <886>-(2)-2718-3666
Fax : <886>-(2)-2718-8180
Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower,
World Finance Centre,
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon,
Hong Kong
Tel : <852>-(2)-735-9218
Fax : <852>-(2)-730-0281
URL : http://www.hitachi.com.hk
Copyright  Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.
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