MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# TSMBJ050 5C-064 Features • • • • • Transient Voltage Protection Device 58 Volts Oxide-Glass passivated Junction Bi-Directional protection in a single device Surge capabilities up to 80A@10/1000us or 250A@8/20us High Off-State impedance and Low On-State voltage Plastic material has UL flammability classification 94V -0 DO-214AA (SMBJ) Mechanical Data • • • Case : Molded plastic Polarity : None cathode band denotes Approx Weight : 0.093grams H Cathode Band J Maximum Ratings Characteristic Non-repetitive peak impulse current Non-repetitive peak On-state current Operating temperature range Junction and storage temperature range Symbol Value Unit IPP 80A 10/1000us ITSM 30A 8.3ms, one-half cycle TOP -40~150oC TJ, TSTG -55~150oC E C D F B G DIMENSIONS DIM A B C D E F G H J Thermal Resistance Characteristic Thermal Resistance junction to lead Thermal Resistance junction to ambient Typical positive temperature coefficient for breakdown voltage A Symbol Value Unit o RqJL 20 C/W RqJA o 100 C/W △VBR/△TJ 0.1%/oC INCHES MIN .078 .077 .002 --.030 .065 .205 .160 .130 MM MIN 2.00 1.96 .05 --.76 1.65 5.21 4.06 3.30 MAX .096 .083 .008 .02 .060 .091 .220 .180 .155 MAX 2.44 2.10 .20 .51 1.52 2.32 5.59 4.57 3.94 SUGGESTED SOLDER PAD LAYOUT 0.090" On recommended pad layout 0.085” 0.070” www.mccsemi.com NOTE MCC TSMBJ0505C-064 ELECTRICAL CHARACTERISTIC @25℃ Unless otherwise specified On-State Rated Off-state Breakover Voltage Breakover Current Repetitive Off Leakage Voltage @IT =1.0A -state Voltage Curr ent@V DRM Parameter Symbol Units Limit TSMBJ0505C-064 Holding Current Off-State Capacitance VDRM Volts Max IDRM uA Max VBO Volts Max VT Volts Max IBOmA Min IBO+ mA Max IHmA Min IH+ mA Max CJ pF Typ. 58 5 77 5 50 800 150 800 140 2/10 us GR-1089-CORE 250 8/20 us IEC 61000-4-5 250 10/160 us FCC Part 68 150 10/700 us ITU-T K20/21 100 10/560 us FCC Part 68 100 10/1000 us GR-1089-CORE 80 Symbol Ipp ; PEAK PULSE CURRENT (%) MAXIMUM RATED SURGE WAVEFORM Waveform Standard Ipp (A) 100 Peak value (Ipp) tr = rise time to peak value tp = decay time to half value 50 Half value 0 tr tp TIME Parameter I VDRM Stand-off voltage IDRM Leakage current at stand-off voltage VBR Breakdown voltage IBR Breakdown current VBO Breakover voltage IPP IBO IH IBO Breakover current IH Holding current VT On state voltage IPP Peak pulse current CO Off-state capacitance IBR IDRM VT NOTE: 1 NOTE: 2 NOTE： 1. I H > ( V L/ R L) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state. The surge recovery time. It does not exceed 30ms. 2. Off-state capacitance measured at f=1.0MHz , 1.0Vrms signal , VR=2Vdc bias. www.mccsemi.com V VBR VDRM VBO MCC TSMBJ0505C-064 Fig.1 - Off-State Current v.s Junction Temperature Fig.2 - Relative Variation of Breakdown Voltage v.s Junction Temperature 100 VBR(TJ) NORMALISED BREAKDOWN VOLTAGE I(DRM) , OFF-STATE CURRENT(uA) 1.2 10 1 VDRM = 50V 0.1 0.01 1.15 VBR(TJ=25℃) 1.1 1.05 1 0.95 0.001 0.9 -25 0 25 50 75 100 125 150 -50 Tj , JUNCTION TEMPERATURE (℃) -25 0 25 50 75 100 125 150 175 Tj ; JUNCTION TEMPERATURE (℃) Fig.3 - Relative Variation of Breakover Voltage v.s Junction Temperature Fig.4 - On-State Current v.s On-State Voltage 100 I(T) ; ON-STATE CURRENT (A) NORMALISED BREAKOVER VOLTAGE 1.1 VBO(TJ) VBO(TJ=25℃) 1.05 1 0.95 10 TJ = 25℃ 1 -50 -25 0 25 50 75 100 125 150 175 1 10 Tj ; JUNCTION TEMPERATURE (℃) V(T) ; ON-STATE VOLTAGE Fig.5 - Relative Variation of Holding Current v.s Junction Temperature Fig.6 - Relative Variation of Junction Capacitance v.s Reverse Voltage Bias 1 1.4 NORMALISED CAPACITANCE NORMALISED HOLDING CURRENT 1.6 1.2 1 0.8 IH(TJ) 0.6 IH(TJ =25℃) CO(VR) CO(VR = 1V) Tj =25℃ f=1MHz VRMS = 1V 0.4 0.2 0.1 -50 -25 0 25 50 75 Tj ; JUNCTION TEMPERATURE (℃) 100 125 1 10 VR ; REVERSE VOLTAGE (V) www.mccsemi.com 100 MCC TSMBJ0505C-064 TYPICAL APPLICATION CIRCUITS FUSE RING TELECOM EQUIPMENT TSPD 1 E.G. MODEM TIP RING PTC TSPD 1 TELECOM EQUIPMENT E.G. ISDN TSPD 2 TIP RING PTC PTC TSPD 2 TSPD 1 TSPD 3 TIP TELECOM EQUIPMENT E.G. LINE CARD PTC The PTC (Positive Temperature Coefficient) is an overcurrent protection device. www.mccsemi.com