MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGF7176C Notice : This is not a final specification Some parametric limits are subject to change. 3 Stage Amplifier with gain control UHF BAND GaAs POWER AMPLIFIER DESCRIPTION The MGF7176C is a monolithic microwave integrated circuit for use in CDMA base handheld phone. PIN CONFIGURATION (TOP VIEW) FEATURES Low voltage operation : Vd=3.0V High output power : Po=28dBm typ. @f=1.75~1.78GHz Low distortion : ACP=-46dBc max. @Po=28dBm,1.25MHz off-set. GND VSS VD_LEV VT GND IN OUT High efficiency : Id=560mA typ. @Po=28dBm Single voltage operation (NVG include) Enable to Gain control Surface mount package 3 Stage Amplifier with gain control External matching circuit is required GND APPLICATION 1.7GHz band handheld phone (7mmx6.1mmx1mm) pin pitch 1.0mm QUALITY GRADE GG Block Diagram of this IC and Application Circuit Example. VDD2 VDD1 Regulator Battery Negative voltage generator Pout VD3 Matching circuit VT Matching circuit Pin GND VGC *Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary, circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. as of Feb.'98 MITSUBISHI ELECTRIC MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGF7176C Notice : This is not a final specification Some parametric limits are subject to change. 3 Stage Amplifier with gain control UHF BAND GaAs POWER AMPLIFIER ABSOLUTE MAXIMUM RATINGS (Ta=25 deg.C) Symbol Parameter Ratings Unit VD1,VD2,VD3 Supply voltage of HPA 5 V VD_NVG Supply voltage of NVG 5 V VD_LEV,VT,VGC Control voltage 4.5 V Pin Input power 5 Tc(op) Operating case temperature -30 ~ +85 deg.C Tstg Storage temperature deg.C -30 ~ +100 dBm *1.Each maximum rating is guaranteed independently. ELECTRICAL CHARACTERISTICS (Ta=25 deg.C) Symbol f Idt Parameter *Standard bias : VD1,VD2,VD3=3V VD_NVG,VD_LEV=3V Test conditions frequency Total drain current Ga Gain Idle_Id Idle current Standard bias*,VGC=VT=3.0V, Pout=28dBm ACP<-46dBc (1.25MHz off-set.) MIN Limits TYP MAX 1750 – – 560 Unit 1780 MHz – mA Standard bias*,VT=3.0V,VGC=3.0V, 28 dB Standard bias*,VT=3.0V,VGC=0.0V, 18 dB Standard bias*,VGC=3V,VT=3V, for Po>10dBm – 170 – Standard bias*,VGC=3V,VT=2V, for Po<12dBm – 50 – Standard bias*,VGC=VT=3V CDMA modulated signal based on IS-9 5 STD. (1.2288Mbps spreading,OQPSK) – 28 – dBm – 5 – mA – – -30 dBc – – 3 – mA Pout Output power Ig Gate current 2sp 2nd harmonics rin input VSWR ACP Adjacent channel leakage Po=28dBm,1.2288MHz Spreading @1.25MHz offset – – -46 dBc Psp Spurious level Standard bias*,VGC=VT=3.0V – – -57 dBm Pnoise Noise power in 1.84~1.87GHz band Standard bias*,VGC=VT=3.0V, Resolution band width = 1MHz – – -70 dBm Damage with-standing Note Standard bias*,VGC=VT=3.0V, Pin=0dBm, Load VSWR=10, All phase, Time=10 sec Note Standard bias*,VGC=VT=3.0V, Pin=0dBm, Load VSWR=3:1, All phase – – Stability No damage No oscillation Spurious level≤-60dBc *CDMA is code division multiple access. OQPSK is modulation method, off-set quadrature phase shift keying. Electrical characteristics are changed by the external matching circuit. Limits are guaranteed by using MITSUBISHI test fixture. Note : Sampling inspection as of Feb.'98 MITSUBISHI ELECTRIC