MITSUBISHI LASER DIODES ML1XX6 SERIES FOR OPTICAL INFORMATION SYSTEMS TYPE NAME ML1016R, ML120G6 DESCRIPTION FEATURES • High Power: 30mW (CW), 50mW (pulse) ML1XX6 is a high power AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 658-nm and standard CW light output of 30mW. ML1XX6 has a window-mirror-facet which improves the maximum output power. That leads to highly reliable and high-power operation. ABSOLUTE MAXIMUM RATINGS Symbol • Visible Light: 658nm (typ) APPLICATION DVD(Digital Versatile Disc)-RAM/RW Drive Note 1) Parameter Conditions Ratings CW 35 Pulse(Note 2) 50 Unit Po Light output power VRL Reverse voltage (laser diode) - 2 V VRD Reverse voltage (Photodiode) - 30 V IFD Forward current (Photodiode) - 10 mA Tc Case temperature - -10 ~ +60 °C Tstg Storage temperature - -40 ~ +100 °C mW Note1: The maximum rating means the limitation over which the laser should not be operated even instant time, and this does not mean the guarantee of its lifetime. As for the reliability,please refer to the reliability report from Mitsubishi Semiconductor Quality Assurance Department. Note2: TARGET SPEC /Condition Duty less than 50%,pulse width less than 1µs ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25˚C) Symbol Parameter Test conditions Min. Typ. Max Unit 70 mA CW - Iop Threshold current Operating current 40 CW,Po=30mW 80 120 mA Vop Operating voltage CW,Po=30mW - V η λp CW,Po=30mW 2.7 0.7 3.0 Slope efficiency Ith θ// θ⊥ Im ID Ct Peak wavelength Beam divergence angle (parallel) Beam divergence angle (perpendicular) Monitoring output current (Photodiode) (only for ML1016R) Dark current (Photodiode) Capacitance (Photodiode) - - mW/mA CW,Po=30mW 655 658 666 nm CW,Po=30mW 7 8.5 11 ° CW,Po=30mW 17 22 26 ° CW,Po=30mW,VRD=1V RL=10Ω(Note 3) 0.05 0.35 2.5 mA 7 0.5 - mA VRD=10V f=1MHz,VRD=5V - pF Note 3:RL=the load resistance of photodiode for ML1016R MITSUBISHI ELECTRIC (1/4) as of December '99 MITSUBISHI LASER DIODES ML1XX6 SERIES FOR OPTICAL INFORMATION SYSTEMS OUTLINE DRAWINGS ML1016R ML120G6 CASE PD LD ML1016R CASE LD ML120G6 Typical Characteristics 40 Tc=25°C 60°C 30 20 10 CW 0 Tc=25 40 50 60 70°C 50 Light Output Power, Po (mW) Light Output Power, Po (mW) 50 0 50 100 150 200 Operating Current , Iop(mA) Light Output Power vs. Current (CW) 40 30 Reference data 20 Pulse Duty: 50% Width: 1ms 10 0 0 50 100 150 200 Operating Current , Iop(mA) Light Output Power vs. Current (Pulse) as of December '99 MITSUBISHI ELECTRIC (2/4) MITSUBISHI LASER DIODES ML1XX6 SERIES FOR OPTICAL INFORMATION SYSTEMS Typical Characteristics 0.6 Monitor Current, Im (mA) Threshold Current, Ith (mA) 100 CW 50 10 0 10 20 30 40 50 60 Tc=25°C CW 0.5 0.4 0.3 0.2 0.1 0.0 70 0 Case Temperature, Tc (°C) Threshold Current vs. Temperature Monitor Photodiode Current 100 10 θ//=9° Astigmatic Distance, AS (mm) Tc=25°C Po=30mW Relative Intensity (%) 10 20 30 40 50 Light Output Power, Po (mW) θ⊥=22° 50 0 -60 -40 -20 0 20 Angle (deg.) 40 Tc=25°C, CW NA=0.7 PMMA Lens 5 0 60 Far-Field-Patterns 0 10 20 30 40 50 Light Output Power, Po (mW) Astigmatic Distance as of December '99 MITSUBISHI ELECTRIC (3/4) MITSUBISHI LASER DIODES ML1XX6 SERIES FOR OPTICAL INFORMATION SYSTEMS Typical Characteristics 661 Po=30mW CW 666 Peak Wavelength, λp (nm) Peak Wavelength, λp (nm) 668 664 662 660 ~0.17nm/°C 658 656 654 10 20 30 40 50 60 658 657 70 Case Temperature, Tc (°C) Peak Wavelength vs. Temperature ~0.05nm/mW 659 656 0 Tc=25°C CW 660 0 10 20 30 40 50 Light Output Power, Po (mW) Peak Wavelength vs. Light Output Power 1600 25°C NA=0.5 Polarization Ratio, P⊥/P// 1400 TE Mode 1200 1000 800 600 400 200 0 0 10 20 30 40 50 Light Output Power, Po (mW) Polarization Ratio as of December '99 MITSUBISHI ELECTRIC (4/4)