Order this document by MMBZ5V6ALT1/D SEMICONDUCTOR TECHNICAL DATA "% & "!"% " "! !" !#$ Motorola Preferred Devices Transient Voltage Suppressors for ESD Protection SOT–23 COMMON ANODE DUAL ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS 24 & 40 WATTS PEAK POWER These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium. 3 Specification Features: • SOT–23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration 1 2 • Peak Power — 24 or 40 Watts @ 1.0 ms (Unidirectional), per Figure 5 Waveform CASE 318–08 STYLE 12 LOW PROFILE SOT–23 PLASTIC • Maximum Clamping Voltage @ Peak Pulse Current • Low Leakage < 5.0 µA • ESD Rating of Class N (exceeding 16 kV) per the Human Body Model Mechanical Characteristics: • Void Free, Transfer–Molded, Thermosetting Plastic Case 1 • Corrosion Resistant Finish, Easily Solderable 2 3 • Package Designed for Optimal Automated Board Assembly • Small Package Size for High Density Applications PIN 1. CATHODE 2. CATHODE 3. ANODE • Available in 8 mm Tape and Reel Use the Device Number to order the 7 inch/3,000 unit reel. Replace the “T1” with “T3” in the Device Number to order the 13 inch/10,000 unit reel. THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Value Unit Ppk 24 40 Watts Total Power Dissipation on FR–5 Board (2) @ TA = 25°C Derate above 25°C °PD° 225 1.8 °mW° mW/°C Thermal Resistance Junction to Ambient RθJA 556 °C/W Total Power Dissipation on Alumina Substrate (3) @ TA = 25°C Derate above 25°C °PD° 300 2.4 °mW mW/°C Thermal Resistance Junction to Ambient RθJA 417 °C/W Junction and Storage Temperature Range TJ Tstg – 55 to +150 °C TL 260 °C Peak Power Dissipation @ 1.0 ms (1) @ TA ≤ 25°C MMBZ5V6ALT1, MMBZ6V2ALT1 MMBZ15VALT1, MMBZ20VALT1 Lead Solder Temperature — Maximum (10 Second Duration) (1) Non–repetitive current pulse per Figure 5 and derate above TA = 25°C per Figure 6. (2) FR–5 = 1.0 x 0.75 x 0.62 in. (3) Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina *Other voltages may be available upon request Thermal Clad is a trademark of the Bergquist Company Preferred devices are Motorola recommended choices for future use and best overall value. Rev 1 Motorola, Inc. 1996 MMBZ5V6ALT1 MMBZ6V2ALT1 MMBZ15VALT1 MMBZ20VALT1 MOTOROLA 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3) (VF = 0.9 V Max @ IF = 10 mA) Max Reverse Leakage Current Breakdown Voltage VZT(3) (V) @ IT (mA) IR @ VR (µA) (V) Max Zener Impedance (5) ZZT @ IZT (Ω) (mA) ZZK @ IZK (Ω) (mA) Max Reverse Surge Current IRSM(4) (A) Max Reverse Voltage @ IRSM(4) (Clamping Voltage) VRSM (V) Maximum Temperature Coefficient of VBR (mV/°C) Min Nom Max 5.32 5.6 5.88 20 5.0 3.0 11 1600 0.25 3.0 8.0 1.26 5.89 6.2 6.51 1.0 0.5 3.0 — — — 2.76 8.7 2.80 (VF = 1.1 V Max @ IF = 200 mA) Breakdown Voltage VBR(3) (V) @ IT (mA) Reverse Voltage Working Peak VRWM (V) Max Reverse Leakage Current IRWM IR (nA) Max Reverse Surge Current IRSM(4) (A) Max Reverse Voltage @ IRSM(4) (Clamping Voltage) VRSM (V) Maximum Temperature Coefficient of VBR (mV/°C) Min Nom Max 14.25 15 15.75 1.0 12.0 50 1.9 21 12.3 19.0 20 21.0 1.0 17.0 50 1.4 28 17.2 (3) (4) (5) (5) VZ/VBR measured at pulse test current IT at an ambient temperature of 25°C. Surge current waveform per Figure 5 and derate per Figure 6. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current supplied. The specfied limits are IZ(AC) = 0.1 IZ(DC), with AC frequency = 1 kHz. TYPICAL CHARACTERISTICS 1000 15 100 12 IR (nA) BREAKDOWN VOLTAGE (VOLTS) (VZ, V BR @ I T ) 18 9 10 1 6 0.1 3 0 – 40 0 + 50 TEMPERATURE (°C) + 100 Figure 1. Typical Breakdown Voltage versus Temperature + 150 0.01 – 40 + 85 + 25 TEMPERATURE (°C) + 125 Figure 2. Typical Leakage Current versus Temperature (Upper curve for each voltage is bidirectional mode, lower curve is unidirectional mode) MOTOROLA 2 MMBZ5V6ALT1 MMBZ6V2ALT1 MMBZ15VALT1 MMBZ20VALT1 320 300 PD , POWER DISSIPATION (mW) C, CAPACITANCE (pF) 280 240 200 5.6 V 160 120 15 V 80 40 0 0 1 2 250 ALUMINA SUBSTRATE 200 150 100 FR–5 BOARD 50 0 3 0 25 50 BIAS (V) Figure 3. Typical Capacitance versus Bias Voltage 75 100 125 TEMPERATURE (°C) 150 175 Figure 4. Steady State Power Derating Curve tr PEAK VALUE — IRSM VALUE (%) 100 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF IRSM. tr ≤ 10 µs IRSM HALF VALUE — 2 50 tP 0 0 1 2 3 t, TIME (ms) 4 PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ TA = 25 ° C (Upper curve for each voltage is unidirectional mode, lower curve is bidirectional mode) 100 90 80 70 60 50 40 30 20 10 0 0 25 Figure 5. Pulse Waveform 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) MMBZ5V6ALT1 MMBZ5V6ALT1 100 UNIDIRECTIONAL Ppk PEAK SURGE POWER (W) Ppk PEAK SURGE POWER (W) RECTANGULAR WAVEFORM, TA = 25°C BIDIRECTIONAL 1 200 Figure 6. Pulse Derating Curve 100 10 175 RECTANGULAR WAVEFORM, TA = 25°C BIDIRECTIONAL 10 UNIDIRECTIONAL 1 0.1 1 10 100 PW, PULSE WIDTH (ms) 1000 0.1 UNIDIRECTIONAL 1 10 100 Figure 7. Maximum Non–repetitive Surge Power, Ppk versus PW Figure 8. Maximum Non–repetitive Surge Power, Ppk(NOM) versus PW Power is defined as VRSM x IZ(pk) where VRSM is the clamping voltage at IZ(pk). Power is defined as VZ(NOM) x IZ(pk) where VZ(NOM) is the nominal zener voltage measured at the low test current used for voltage classification. MMBZ5V6ALT1 MMBZ6V2ALT1 MMBZ15VALT1 MMBZ20VALT1 1000 PW, PULSE WIDTH (ms) MOTOROLA 3 TYPICAL COMMON ANODE APPLICATIONS A quad junction common anode design in a SOT–23 package protects four separate lines using only one package. This adds flexibility and creativity to PCB design especially when board space is at a premium. Two simplified examples of TVS applications are illustrated below. Computer Interface Protection A KEYBOARD TERMINAL PRINTER ETC. B C I/O D FUNCTIONAL DECODER GND MMBZ5V6ALT1 MMBZ6V2ALT1 MMBZ15VALT1 MMBZ20VALT1 Microprocessor Protection VDD VGG ADDRESS BUS RAM ROM DATA BUS CPU I/O CLOCK CONTROL BUS MMBZ5V6ALT1 MMBZ6V2ALT1 MMBZ15VALT1 MMBZ20VALT1 GND MMBZ5V6ALT1 MMBZ6V2ALT1 MMBZ15VALT1 MMBZ20VALT1 MOTOROLA 4 MMBZ5V6ALT1 MMBZ6V2ALT1 MMBZ15VALT1 MMBZ20VALT1 INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT–23 SOT–23 POWER DISSIPATION The power dissipation of the SOT–23 is a function of the drain pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by T J(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the SOT–23 package, PD can be calculated as follows: PD = TJ(max) – TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 225 milliwatts. PD = 150°C – 25°C 556°C/W = 225 milliwatts The 556°C/W for the SOT–23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT–23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. MMBZ5V6ALT1 MMBZ6V2ALT1 MMBZ15VALT1 MMBZ20VALT1 MOTOROLA 5 OUTLINE DIMENSIONS A L STYLE 12: PIN 1. CATHODE 2. CATHODE 3. ANODE 3 B S 1 V 2 G C D H K J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. DIM A B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 CASE 318–08 ISSUE AE Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 MOTOROLA 6 ◊ *MMBZ5V6ALT1/D* MMBZ5V6ALT1/D MMBZ5V6ALT1 MMBZ6V2ALT1 MMBZ15VALT1 MMBZ20VALT1