Si9913 New Product Vishay Siliconix Dual MOSFET Bootstrapped Driver with Break-Before-Make FEATURES APPLICATIONS D D D D D D D D D D D D D D 4.5- to 5.5-V Operation Undervoltage Lockout 250-kHz to 1-MHz Switching Frequency Synchronous Switch Enable One Input PWM Signal Generates Both Drive Bootstrapped High-Side Drive Operates from 4.5- to 30-V Supply TTL/CMOS Compatible Input Levels 1-A Peak Drive Current Multiphase Desktop CPU Supplies Single-Supply Synchronous Buck Converters Mobile Computing CPU Core Power Converters Standard-to-Synchronous Converter Adaptations High Frequency Switching Converters DESCRIPTION The Si9913 is a dual MOSFET high-speed driver with break-before-make. It is designed to operate in high frequency dc-dc switchmode power supplies. The high-side driver is bootstrapped to handle the high voltage slew rate associated with “floating” high-side gate drivers. Each driver is capable of switching a 3000-pF load with 60-ns propogation delay and 25-ns transition time. The Si9913 comes with internal break-before-make feature to prevent shoot-through current in the external MOSFETs. A syschronous enable pin is used to enable the low-side driver. When disabled, the OUTL is logic low. The Si9913 is available in an 8-pin SOIC package for operation over the industrial operation range (–40_C to 85_C). FUNCTIONAL BLOCK DIAGRAM AND TRUTH TABLE BOOT VDD D1 VDC CBOOT Q1 OUTH Level Shift TRUTH TABLE Undervoltage S1 VS D2 VDD OUTL IN SYN + – Document Number: 71343 S-02882—Rev. A, 21-Dec-00 VBBM Q2 VS SYN IN VOUTL L L L L VOUTH L L L H L H L H L H L L H H L H H L L L L H L H L H H H L L L H H H L H GND www.vishay.com 1 Si9913 New Product Vishay Siliconix ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Low Side Driver Supply Voltage VDD 7.0 Input Voltage on IN VIN –0.3 to VDD +0.3 VSYN –0.3 to VDD +0.3 VBOOT 35.0 Synchronous Pin Voltage Bootstrap Voltage High Side Driver (Bootstrap) Supply Voltage V VBOOT – VS 7.0 Operating Junction Temperature Range TJ –40 to 125 Storage Temperature Range Tstg –40 to 150 Power Dissipation (Note a and b) PD 830 mW Thermal Impedance qJA 125 °C/W Lead Temperature (soldering 10 Sec) Sec 300 °C _ _C Notes a. Device mounted with all leads soldered to P.C. Board b. Derate 8.3 W/_C above 25_C Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. RECOMMENDED OPERATING CONDITIONS Parameter Symbol Bootstrap Voltage (High-Side Drain Voltage) Logic Supply Bootstrap Capacitor Limit Unit VBOOT 4.5 to 30 VDD 4.5 to 5.5 CBOOT 100 n to 1 m F TA –40 to 85 _C Ambient Temperature V SPECIFICATIONS Test Conditions Unless Specified Parameter Symbol VBOOT = 4.5 to 30 V, VDD = 4.5 to 5.5 V TA = –40 to 85_C Limits Mina Typb Maxa Unit Power Supplies VDD Supply VDD IDD Supply IDD1 (en) SYN = H, IN = H, VS = 0 V 1000 IDD Supply IDD2(en) SYN = H, IN = L, VS = 0 V 500 IDD Supply IDD3(dis) SYN = L, IN = X, VS = V 500 IDD Supply IDD4(en) SYN = H, IN = X, VS = 25 V, VBOOT = 30 V 200 IDD Supply IDD5(dis) SYN = L, IN = X, VS = 25 V, VBOOT = 30 V IDD(en) FIN = 300 kHz, SYN = High, Driving 2 X Si4412DY IDD(dis) FIN = 300 kHz, SYN = Low, Driving 2 X Si4412DY IBOOT VBOOT = 30 V, VS = 25 V, VOUTH = H IDD Supply Boot Strap Current 4.5 5.5 m mA 200 9 5 mA 0.9 3 VBBM 1.1 3 Input High VIH 0.7 VDD VDD + 0.3 Input Low VIL –0.3 0.3 VDD Reference Voltage Break-Before-Make Reference Voltage V Logic Inputs (SYN, IN) V Undervoltage Lockout VDD Undervoltage VDD Undervoltage Hysteresis www.vishay.com 2 VUVL VHYST VDD Rising 3.7 4.3 0.4 V Document Number: 71343 S-02882—Rev. A, 21-Dec-00 Si9913 New Product Vishay Siliconix SPECIFICATIONS Test Conditions Unless Specified Parameter Symbol VBOOT = 4.5 to 30 V, VDD = 4.5 to 5.5 V TA = –40 to 85_C VFD1 Forward Current = 100 mA Limits Mina Typb Maxa Unit 0.8 1 V Bootstrap Diode Diode Forward Voltage Output Drive Current OUTH Source Current IOUT( H+) VBOOT – VS = 3.7 V, VOUTH – VS = 2 V OUTH Sink Current IOUT(H–) VBOOT – VS = 3.7 V, VOUTH – VS = 1 V OUTL Source Current IOUT (L+) VDD = 4.5 V, VOUTL = 2 V OUTL Sink Current IOUT(L–) VDD = 4.5 V, VOUTL = 1 V –0.4 0.4 A –0.4 0.6 Timing (CLOAD = 3 nF) OUTL Off Propagation Delay tpdl(OUTL) OUTL On Propagation Delay tpdh(OUTL) OUTH Off Propagation Delay tpdl(OUTH) OUTH On Propagation Delay tpdh(OUTH) OUTL Turn On Time 30 VDD = 4.5 V 20 30 VBOOT – VS = 4.5 V tr(OUTL) 20 OUTL = 10 to 90% 25 OUTL Turn Off Time tf(OUTL) OUTL = 90 to 10% 25 OUTH Turn On Time tr(OUTH) OUTH – VS = 10 to 90% 30 OUTH Turn Off Time tf(OUTH) OUTH – VS = 90 to 10% 30 ns Notes a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. TIMING WAVEFORMS IN 50% 50% tpdh(OUTL) tf(OUTL) 90% 90% OUTL 10% 10% tr(OUTL) tpdl(OUTH) tpdl(OUTL) tf(OUTH) tr(OUTH) tpdh(OUTH) OUTH 90% 10% 90% 10% VS Document Number: 71343 S-02882—Rev. A, 21-Dec-00 www.vishay.com 3 Si9913 New Product Vishay Siliconix PIN CONFIGURATION SO-8 OUTH 1 8 VS GND 2 7 BOOT IN 3 6 VDD SYN 4 5 OUTL Top View PIN DESCRIPTION Pin Number Name Function 1 OUTH Output drive for upper MOSFET. 2 GND Ground supply 3 IN 4 SYN Synchronous enable. When logic is high, the low-side driver is enabled. 5 OUTL Output drive for lower MOSFET. 6 VDD 7 BOOT 8 VS CMOS level input signal. Controls both output drives. Input power supply Floating bootstrap supply for the upper MOSFET Floating GND for the upper MOSFET. VS is connected to the buck switching node and the source side of the upper MOSFET. ORDERING INFORMATION Part Number Si9913DY Si9913DY-T1 Temperature Range Package Bulk –40 to 85_C _ Tape and Reel Eval Kit Temperature Range Board Type Si9913DB –40 to 85_C Surface Mount TYPICAL WAVEFORMS Driver On Switch Delay VS CL = Si4412DY OUTH OUTH OUTL OUTL IN IN www.vishay.com CL = Si4412DY VS Si9912 tr, tf, tpd 4 Driver Off Switch Delay Si9912 tr, tf, tpd Document Number: 71343 S-02882—Rev. A, 21-Dec-00 Si9913 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) IDD Supply Current vs. Frequency Rise and Fall Time vs. CLOAD 30 50 Rise and Fall times (ns) 40 Current (mA) 10 tr(OUTH) 30 tf(OUTL) tf(OUTH) 20 tr(OUTL) 10 1 0 1 10 100 1000 0.3 1 Frequency (kHz) 3 10 Load Capacitance (nF) VOUT(H+) vs. Supply VOUT(H–) vs. Supply 0 5 0.5 A 4 Output Voltage Drop (V) Output Voltage Drop (V) –1 –2 1A –3 1.5 A –4 –5 3.0 2A 3 1.5 A 2 1A 1 3.5 4.0 4.5 5.0 5.5 0 3.0 6.0 0.5 A 3.5 4.0 Supply Voltage (V) 4.5 5.0 5.5 6.0 Supply Voltage (V) VOUT(L+) vs. Supply VOUT(L–) vs. Supply 0 2.5 0.5 A –1 2.0 Output Voltage Drop (V) Output Voltage Drop (V) 1A –2 1.5 A –3 –4 2A 1.5 A 1.0 1A 0.5 –5 –6 4.0 2A 1.5 4.5 5.0 Supply Voltage (V) Document Number: 71343 S-02882—Rev. A, 21-Dec-00 5.5 6.0 0.0 4.0 0.5 A 4.5 5.0 5.5 6.0 Supply Voltage (V) www.vishay.com 5 Si9913 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) VOUT(H+) vs. Temperature VOUT(H–) vs. Temperature 0 5 0.5 A 4 Output Voltage Drop (V) Output Voltage Drop (V) –1 –2 1A –3 –4 3 2A 1.5 A 2 1A 1 0.5 A –5 –50 –25 0 25 50 75 0 –50 100 –25 0 Temperature (_C) 25 50 75 100 75 100 Temperature (_C) VOUT(L+) vs. Temperature VOUT(L–) vs. Temperature 0 2.0 0.5 A 1A Output Voltage Drop (V) Output Voltage Drop (V) –1 –2 1.5 A –3 1.5 2A 1.0 1.5 A 1A 0.5 –4 0.5 A 2A –5 –50 –25 0 25 50 75 100 Temperature (_C) 0.0 –50 –25 0 25 50 Temperature (_C) THEORY OF OPERATION Break-Before-Make Function Under Voltage Lockout Function The Si9913 has an internal break-before-make function to ensure that both high-side and low-side MOSFETs are not turned on at the same time. The high-side drive (OUTH) will not turn on until the low-side gate drive voltage (measured at the OUTL pin) is less than VBBM, thus ensuring that the low-side MOSFET is turned off. The low-side drive (OUTL) will not turn on until the voltage at the MOSFET half-bridge output (measured at the VS pin) is less than VBBM, thus ensuring that the high-side MOSFET is turned off. The Si9913 has an internal under-voltage lockout feature to prevent driving the MOSFET gates when the supply voltage (at VDD) is less than the under-voltage lockout specification (VUVL). This prevents the output MOSFETs from being turned on without sufficient gate voltage to ensure they are fully on. There is hysteresis included in this feature to prevent lockout from cycling on and off. www.vishay.com 6 Document Number: 71343 S-02882—Rev. A, 21-Dec-00