SAMSUNG K4T1G164QM-ZCCC

1Gb M-die DDR2 SDRAM
DDR2 SDRAM
1Gb M-die DDR2 SDRAM Specification
Version 1.1
January 2005
Page 1 of 29
Rev.1.1 Jan. 2005
1Gb M-die DDR2 SDRAM
DDR2 SDRAM
Contents
0. Ordering Information
1. Key Feature
2. Package Pinout/Mechnical Dimension & Addressing
2.1 Package Pintout & Mechnical Dimension
2.2 Input/Output Function Description
2.3 Addressing
3. Absolute Maximum Rating
4. AC & DC Operating Conditions & Specifications
Page 2 of 29
Rev.1.1 Jan. 2005
1Gb M-die DDR2 SDRAM
DDR2 SDRAM
0. Ordering Information
Organization
DDR2-533 4-4-4
DDR2-400 3-3-3
Package
256Mx4
K4T1G044QM-ZCD5
K4T1G044QM-ZCCC
Lead-Free
128Mx8
K4T1G084QM-ZCD5
K4T1G084QM-ZCCC
Lead-Free
64Mx16
K4T1G164QM-ZCD5
K4T1G164QM-ZCCC
Lead-Free
Note : Speed bin is in order of CL-tRCD-tRP
1.Key Features
DDR2-533
4-4-4
DDR2-400
3-3-3
Units
CAS Latency
4
3
tCK
tRCD(min)
15
15
ns
tRP(min)
15
15
ns
tRC(min)
55
55
ns
Speed
• JEDEC standard 1.8V ± 0.1V Power Supply
• VDDQ = 1.8V ± 0.1V
• 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for
533Mb/sec/pin.
• 8 Banks
• Posted CAS
• Programmable CAS Latency: 3, 4, 5
• Programmable Additive Latency: 0, 1 , 2 , 3 and 4
• Write Latency(WL) = Read Latency(RL) -1
• Burst Length: 4 , 8(Interleave/nibble sequential)
• Programmable Sequential / Interleave Burst Mode
• Bi-directional Differential Data-Strobe (Single-ended
data-strobe is an optional feature)
• Off-Chip Driver(OCD) Impedance Adjustment
• On Die Termination
• Average Refresh Period 7.8us at lower than TCASE
85°C, 3.9us at 85°C < TCASE < 95 °C
• Package: 68ball FBGA - 256Mx4/128Mx8 , 92ball
FBGA - 64Mx16
The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os
x 8 banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8
banks device. This synchronous device achieves high
speed double-data-rate transfer rates of up to
533Mb/sec/pin (DDR2-533) for general applications.
The chip is designed to comply with the following key
DDR2 SDRAM features such as posted CAS with additive
latency, write latency = read latency - 1, Off-Chip
Driver(OCD) impedance adjustment and On Die Termination.
All of the control and address inputs are synchronized with
a pair of externally supplied differential clocks. Inputs are
latched at the crosspoint of differential clocks (CK rising
and CK falling). All I/Os are synchronized with a pair of
bidirectional strobes (DQS and DQS) in a source synchronous fashion. The address bus is used to convey row, column, and bank address information in a RAS/CAS
multiplexing style. For example, 1Gb(x4) device receive
14/11/3 addressing.
The 1Gb DDR2 device operates with a single 1.8V ± 0.1V
power supply and 1.8V ± 0.1V VDDQ.
The 1Gb DDR2 device is available in 68ball FBGAs(x4/x8)
and in 92ball FBGAs(x16).
• All of Lead-free products are compliant for RoHS
Note: The functionality described and the timing specifications included in this data sheet are for the DLL Enabled
mode of operation.
Note : This data sheet is an abstract of full DDR2 specification and does not cover the common features
which are described in “DDR2 SDRAM Device Operation & Timing Diagram”.
Page 3 of 29
Rev.1.1 Jan. 2005
1Gb M-die DDR2 SDRAM
DDR2 SDRAM
2. Package Pinout/Mechnical Dimension & Addressing
2.1 Package Pinout
x4 package pinout (Top View) : 68ball FBGA Package(60balls + 8balls of dummy balls)
1
2
NC
3
7
A
NC
8
9
NC
NC
VDDQ
B
C
D
VDD
NC
VSS
E
VSSQ
DQS
NC
VSSQ
DM
F
DQS
VSSQ
NC
VDDQ
DQ1
VDDQ
G
VDDQ
DQ0
VDDQ
NC
VSSQ
DQ3
H
DQ2
VSSQ
NC
VDDL
VREF
VSS
J
VSSDL
CK
VDD
CKE
WE
K
RAS
CK
ODT
BA0
BA1
L
CAS
CS
A10/AP
A1
M
A2
A0
A3
A5
N
A6
A4
A7
A9
P
A11
A8
A12
NC
R
NC
A13
BA2
VSS
VDD
VDD
VSS
T
U
V
NC
W
NC
NC
NC
Notes:
1. Pin E3 has identical
capacitance as pin E7.
2. VDDL and VSSDL are
power and ground for the
DLL.
Ball Locations (x4)
: Populated Ball
+ : Depopulated Ball
Top View (See the balls through the Package)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
V
W
2
3
4
5
6
+ +
+ + + +
+ + + +
+ + + +
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+ + + +
+ + + +
+ + + +
+ +
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
7
8
9
+
+ + +
+ + +
+ + +
+
+
+
+ + +
+ + +
+ + +
+
Page 4 of 29
Rev.1.1 Jan. 2005
1Gb M-die DDR2 SDRAM
DDR2 SDRAM
x8 package pinout (Top View) : 68ball FBGA Package(60balls + 8balls of dummy balls)
1
2
NC
3
7
A
NC
8
9
NC
NC
VDDQ
B
C
D
VDD
NU/
RDQS
VSS
E
VSSQ
DQS
DQ6
VSSQ
DM/
RDQS
F
DQS
VSSQ
DQ7
VDDQ
DQ1
VDDQ
G
VDDQ
DQ0
VDDQ
DQ4
VSSQ
DQ3
H
DQ2
VSSQ
DQ5
VDDL
VREF
VSS
J
VSSDL
CK
VDD
CKE
WE
K
RAS
CK
ODT
BA0
BA1
L
CAS
CS
A10/AP
A1
M
A2
A0
A3
A5
N
A6
A4
A7
A9
P
A11
A8
A12
NC
R
NC
A13
BA2
VSS
VDD
VDD
VSS
T
U
V
NC
W
NC
NC
NC
Notes:
1. Pins F3 and E2 have
identical capacitance as
pins F7 and E8.
2. For a read, when enabled,
strobe pair RDQS &
RDQS are identical in
function and timing to
strobe pair DQS & DQS
and input masking
function is disabled.
3. The function of DM or
RDQS/RDQS are enabled
by EMRS command.
4. VDDL and VSSDL are
power and ground for the
DLL.
Ball Locations (x8)
: Populated Ball
+ : Depopulated Ball
Top View (See the balls through the Package)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
V
W
2
3
4
5
6
+ +
+ + + +
+ + + +
+ + + +
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+ + + +
+ + + +
+ + + +
+ +
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
7
8
9
+
+ + +
+ + +
+ + +
+
+
+
+ + +
+ + +
+ + +
+
Page 5 of 29
Rev.1.1 Jan. 2005
1Gb M-die DDR2 SDRAM
DDR2 SDRAM
x16 package pinout (Top View) : 92ball FBGA Package(84balls + 8balls of dummy balls)
1
2
NC
3
7
A
NC
8
9
NC
NC
VDDQ
B
C
VDD
NC
VSS
D
VSSQ
UDQS
DQ14
VSSQ
UDM
E
UDQS
VSSQ
DQ15
VDDQ
DQ9
VDDQ
F
VDDQ
DQ8
VDDQ
DQ12
VSSQ
DQ11
G
DQ10
VSSQ
DQ13
VDDQ
VDD
NC
VSS
H
VSSQ
LDQS
DQ6
VSSQ
LDM
J
LDQS
VSSQ
DQ7
VDDQ
DQ1
VDDQ
K
VDDQ
DQ0
VDDQ
DQ4
VSSQ
DQ3
L
DQ2
VSSQ
DQ5
VDDL
VREF
VSS
M
VSSDL
CK
VDD
CKE
WE
N
RAS
CK
ODT
BA0
BA1
P
CAS
CS
BA2
A10/AP
A1
R
A2
A0
VSS
A3
A5
T
A6
A4
A7
A9
U
A11
A8
VDD
A12
NC
V
NC
NC
VDD
VSS
W
X
NC
Ball Locations
AA
NC
NC
NC
Note :
1. VDDL and VSSDL are
power and ground for the
DLL.
: Populated Ball
(x16)
+ : Depopulated Ball
Top View (See the balls through the Package)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
V
W
X
AA
2
3
4
5
6
+ + + +
+ + + + + +
+ + + + + +
+ + +
+ + +
+ + +
+ + +
+ + +
+ + +
+ + +
+ + +
+ + +
+
+ + +
+ + +
+
+ + +
+ + +
+
+ + +
+ + +
+ + + + + +
+ + + + + +
+ + + +
7
8
9
+
+ + +
+ + +
+
+
+
+ + +
+ + +
+
Page 6 of 29
Rev.1.1 Jan. 2005
1Gb M-die DDR2 SDRAM
DDR2 SDRAM
FBGA Package Dimension(x4/x8)
11.00 ± 0.10
21.70 ± 0.10
# A1 INDEX MARK
(5.50)
0.45±0.05
11.00 ± 0.10
21.70 ± 0.10
#A1
0.10MAX
(0.90)
(1.80)
0.35±0.05
MAX.1.20
Page 7 of 29
Rev.1.1 Jan. 2005
1Gb M-die DDR2 SDRAM
DDR2 SDRAM
FBGA Package Dimension(x16)
11.00 ± 0.10
21.70 ± 0.10
# A1 INDEX MARK
(5.50)
0.45±0.05
11.00 ± 0.10
21.70 ± 0.10
#A1
0.10MAX
(0.90)
(1.80)
0.35±0.05
MAX.1.20
Page 8 of 29
Rev.1.1 Jan. 2005
1Gb M-die DDR2 SDRAM
DDR2 SDRAM
2.2 Input/Output Functional Description
Symbol
Type
Function
Input
Clock: CK and CK are differential clock inputs. All address and control input signals are sampled
on the crossing of the positive edge of CK and negative edge of CK. Output (read) data is referenced to the crossings of CK and CK (both directions of crossing).
CKE
Input
Clock Enable: CKE HIGH activates, and CKE Low deactivates, internal clock signals and device
input buffers and output drivers. Taking CKE Low provides Precharge Power-Down and Self
Refresh operation (all banks idle), or Active Power-Down (row Active in any bank). CKE is synchronous for power down entry and exit, and for self refresh entry. CKE is asynchronous for self
refresh exit. After VREF has become stable during the power on and initialization swquence, it
must be maintained for proper operation of the CKE receiver. For proper self-refresh entry and
exit, VREF must be maintained to this input. CKE must be maintained high throughout read and
write accesses. Input buffers, excluding CK, CK, ODT and CKE are disabled during power-down.
Input buffers, excluding CKE, are disabled during self refresh.
CS
Input
Chip Select: All commands are masked when CS is registered HIGH. CS provides for external
Rank selection on systems with multiple Ranks. CS is considered part of the command code.
ODT
Input
On Die Termination: ODT (registered HIGH) enables termination resistance internal to the DDR2
SDRAM. When enabled, ODT is only applied to each DQ, DQS, DQS, RDQS, RDQS, and DM
signal for x4/x8 configurations. For x16 configuration, ODT is applied to each DQ, UDQS/UDQS,
LDQS/LDQS, UDM, and LDM signal. The ODT pin will be ignored if the Extended Mode Register
Set(EMRS) is programmed to disable ODT.
RAS, CAS, WE
Input
Command Inputs: RAS, CAS and WE (along with CS) define the command being entered.
DM
Input
Input Data Mask: DM is an input mask signal for write data. Input data is masked when DM is
sampled HIGH coincident with that input data during a Write access. DM is sampled on both
edges of DQS. Although DM pins are input only, the DM loading matches the DQ and DQS loading. For x8 device, the function of DM or RDQS/RDQS is enabled by EMRS command.
BA0 - BA2
Input
Bank Address Inputs: BA0, BA1 and BA2 define to which bank an Active, Read, Write or Precharge command is being applied. Bank address also determines if the mode register or extended
mode register is to be accessed during a MRS or EMRS cycle.
A0 - A13
Input
Address Inputs: Provided the row address for Active commands and the column address and
Auto Precharge bit for Read/Write commands to select one location out of the memory array in the
respective bank. A10 is sampled during a Precharge command to determine whether the Precharge applies to one bank (A10 LOW) or all banks (A10 HIGH). If only one bank is to be precharged, the bank is selected by BA0, BA1 and BA2. The address inputs also provide the op-code
during Mode Register Set commands.
DQ
Input/Output
Data Input/ Output: Bi-directional data bus.
Input/Output
Data Strobe: Output with read data, input with write data. Edge-aligned with read data, centered
in write data. For the x16, LDQS corresponds to the data on DQ0-DQ7; UDQS corresponds to the
data on DQ8-DQ15. For the x8, an RDQS option using DM pin can be enabled via the EMRS(1) to
simplify read timing. The data strobes DQS, LDQS, UDQS, and RDQS may be used in single
ended mode or paired with optional complementary signals DQS, LDQS, UDQS, and RDQS to
provide differential pair signaling to the system during both reads and writes. An EMRS(1) control
bit enables or disables all complementary data strobe signals.
CK, CK
DQS, (DQS)
(LDQS), (LDQS)
(UDQS), (UDQS)
(RDQS), (RDQS)
NC
No Connect: No internal electrical connection is present.
VDD/VDDQ
Supply
Power Supply: 1.8V +/- 0.1V, DQ Power Supply: 1.8V +/- 0.1V
VSS/VSSQ
Supply
Ground, DQ Ground
VDDL
Supply
DLL Power Supply: 1.8V +/- 0.1V
VSSDL
Supply
DLL Ground
VREF
Supply
Reference voltage
In this data sheet, "differential DQS signals" refers to any of the following with A10 = 0 of EMRS(1)
x4 DQS/DQS
x8 DQS/DQS
if EMRS(1)[A11] = 0
x8 DQS/DQS, RDQS/RDQS,
if EMRS(1)[A11] = 1
x16 LDQS/LDQS and UDQS/UDQS
"single-ended DQS signals" refers to any of the following with A10 = 1 of EMRS(1)
x4 DQS
x8 DQS
if EMRS(1) [A11] = 0
x8 DQS, RDQS, if EMRS(1) [A11] = 1
x16 LDQS and UDQS
Page 9 of 29
Rev.1.1 Jan. 2005
1Gb M-die DDR2 SDRAM
DDR2 SDRAM
2.3 1Gb Addressing
Configuration
# of Bank
Bank Address
256Mb x4
128Mb x 8
64Mb x16
8
8
8
BA0 ~ BA2
BA0 ~ BA2
BA0 ~ BA2
Auto precharge
A10/AP
A10/AP
A10/AP
Row Address
A0 ~ A13
A0 ~ A13
A0 ~ A12
A0 ~ A9,A11
A0 ~ A9
A0 ~ A9
Column Address
* Reference information: The following tables are address mapping information for other densities.
256Mb
Configuration
# of Bank
Bank Address
64Mb x4
32Mb x 8
16Mb x16
4
4
4
BA0,BA1
BA0,BA1
BA0,BA1
Auto precharge
A10/AP
A10/AP
A10/AP
Row Address
A0 ~ A12
A0 ~ A12
A0 ~ A12
A0 ~ A9,A11
A0 ~ A9
A0 ~ A8
128Mb x4
64Mb x 8
32Mb x16
4
4
4
Column Address
512Mb
Configuration
# of Bank
Bank Address
BA0,BA1
BA0,BA1
BA0,BA1
Auto precharge
A10/AP
A10/AP
A10/AP
Row Address
A0 ~ A13
A0 ~ A13
A0 ~ A12
A0 ~ A9,A11
A0 ~ A9
A0 ~ A9
512Mb x4
256Mb x 8
128Mb x16
Column Address
2Gb
Configuration
# of Bank
Bank Address
Auto precharge
Row Address
Column Address
8
8
8
BA0 ~ BA2
BA0 ~ BA2
BA0 ~ BA2
A10/AP
A10/AP
A10/AP
A0 ~ A14
A0 ~ A14
A0 ~ A13
A0 ~ A9,A11
A0 ~ A9
A0 ~ A9
4Gb
Configuration
# of Bank
Bank Address
1 Gb x4
512Mb x 8
256Mb x16
8
8
8
BA0 ~ BA2
BA0 ~ BA2
BA0 ~ BA2
Auto precharge
A10/AP
A10/AP
A10/AP
Row Address
A0 - A15
A0 - A15
A0 - A14
A0 - A9,A11
A0 - A9
A0 - A9
Column Address/page size
Page 10 of 29
Rev.1.1 Jan. 2005
1Gb M-die DDR2 SDRAM
DDR2 SDRAM
3. Absolute Maximum DC Ratings
Symbol
Rating
Units
Notes
Voltage on VDD pin relative to Vss
- 1.0 V ~ 2.3 V
V
1
VDDQ
Voltage on VDDQ pin relative to Vss
- 0.5 V ~ 2.3 V
V
1
VDDL
Voltage on VDDL pin relative to Vss
- 0.5 V ~ 2.3 V
V
1
Voltage on any pin relative to Vss
- 0.5 V ~ 2.3 V
V
1
-55 to +100
°C
1, 2
VDD
VIN, VOUT
TSTG
1.
Parameter
Storage Temperature
Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please
refer to JESD51-2 standard.
4. AC & DC Operating Conditions
Recommended DC Operating Conditions (SSTL - 1.8)
Rating
Symbol
VDD
Parameter
Units
Min.
Typ.
Max.
Notes
Supply Voltage
1.7
1.8
1.9
V
VDDL
Supply Voltage for DLL
1.7
1.8
1.9
V
4
VDDQ
Supply Voltage for Output
1.7
1.8
1.9
V
4
VREF
Input Reference Voltage
0.49*VDDQ
0.50*VDDQ
0.51*VDDQ
mV
1,2
Termination Voltage
VREF-0.04
VREF
VREF+0.04
V
3
VTT
There is no specific device VDD supply voltage requirement for SSTL-1.8 compliance. However under all conditions VDDQ must
be less than or equal to VDD.
1. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the value of VREF is
expected to be about 0.5 x VDDQ of the transmitting device and VREF is expected to track variations in VDDQ.
2. Peak to peak AC noise on VREF may not exceed +/-2% VREF(DC).
3. VTT of transmitting device must track VREF of receiving device.
4. AC parameters are measured with VDD, VDDQ and VDDL tied together.
Page 11 of 29
Rev.1.1 Jan. 2005
1Gb M-die DDR2 SDRAM
DDR2 SDRAM
Operating Temperature Condition
Symbol
Parameter
Rating
Units
Notes
TOPER
Operating Temperature
0 to 95
°C
1, 2, 3
1. Operating Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions,
please refer to JESD51.2 standard.
2. At 85 - 95 °C operation temperature range, doubling refresh commands in frequency to a 32ms period ( tREFI=3.9 us ) is required,
and to enter to self refresh mode at this temperature range, an EMRS command is required to change internal refresh rate.
Input DC Logic Level
Symbol
Parameter
Min.
Max.
Units
VIH(DC)
DC input logic high
VREF + 0.125
VDDQ + 0.3
V
VIL(DC)
DC input logic low
- 0.3
VREF - 0.125
V
Notes
Input AC Logic Level
Parameter
Min.
Max.
Units
VIH(AC)
Symbol
AC input logic high
VREF + 0.250
-
V
VIL(AC)
AC input logic low
-
VREF - 0.250
V
Notes
AC Input Test Conditions
Symbol
Condition
Value
Units
Notes
Input reference voltage
0.5 * VDDQ
V
1
VSWING(MAX)
Input signal maximum peak to peak swing
1.0
V
1
SLEW
Input signal minimum slew rate
1.0
V/ns
2, 3
VREF
Notes:
1. Input waveform timing is referenced to the input signal crossing through the VIH/IL(AC) level applied to the device under test.
2. The input signal minimum slew rate is to be maintained over the range from VREF to VIH(AC) min for rising edges and the range
from VREF to VIL(AC) max for falling edges as shown in the below figure.
3. AC timings are referenced with input waveforms switching from VIL(AC) to VIH(AC) on the positive transitions and VIH(AC) to
VIL(AC) on the negative transitions.
VDDQ
VIH(AC) min
VIH(DC) min
VSWING(MAX)
VREF
VIL(DC) max
VIL(AC) max
delta TF
Falling Slew =
delta TR
VREF - VIL(AC) max
Rising Slew =
delta TF
VSS
VIH(AC) min - VREF
delta TR
< AC Input Test Signal Waveform >
Page 12 of 29
Rev.1.1 Jan. 2005
1Gb M-die DDR2 SDRAM
DDR2 SDRAM
Differential input AC logic Level
Symbol
Parameter
Min.
Max.
Units
Notes
VID(AC)
AC differential input voltage
0.5
VDDQ + 0.6
V
1
VIX(AC)
AC differential cross point voltage
0.5 * VDDQ - 0.175
0.5 * VDDQ + 0.175
V
2
Notes:
1. VID(AC) specifies the input differential voltage |VTR -VCP | required for switching, where VTR is the true input signal (such as CK, DQS,
LDQS or UDQS) and VCP is the complementary input signal (such as CK, DQS, LDQS or UDQS). The minimum value is equal to V IH
(AC) - V IL(AC).
2. The typical value of VIX(AC) is expected to be about 0.5 * VDDQ of the transmitting device and VIX(AC) is expected to track variations
in VDDQ . VIX(AC) indicates the voltage at which differential input signals must cross.
VDDQ
VTR
Crossing point
VID
VIX or VOX
VCP
VSSQ
< Differential signal levels >
Differential AC output parameters
Symbol
VOX(AC)
Parameter
AC differential cross point voltage
Min.
Max.
Units
Note
0.5 * VDDQ - 0.125
0.5 * VDDQ + 0.125
V
1
Note :
1. The typical value of VOX(AC) is expected to be about 0.5 * VDDQ of the transmitting device and VOX(AC) is expected to track variations
in VDDQ . VOX(AC) indicates the voltage at which differential output signals must cross.
Page 13 of 29
Rev.1.1 Jan. 2005
1Gb M-die DDR2 SDRAM
DDR2 SDRAM
OCD default characteristics
Description
Parameter
Min
Nom
Output impedance
12.6
Output impedance step
size for OCD calibration
Pull-up and pull-down
mismatch
Output slew rate
Sout
18
Max
Unit
Notes
23.4
ohms
1,2
0
1.5
ohms
6
0
4
ohms
1,2,3
1.5
5
V/ns
1,4,5,6,7,8
Notes:
1. Absolute Specifications (0°C ≤ TCASE ≤ +95°C; VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V)
2. Impedance measurement condition for output source dc current: VDDQ = 1.7V; VOUT = 1420mV;
(VOUT-VDDQ)/Ioh must be less than 23.4 ohms for values of VOUT between VDDQ and VDDQ280mV. Impedance measurement condition for output sink dc current: VDDQ = 1.7V; VOUT = 280mV;
VOUT/Iol must be less than 23.4 ohms for values of VOUT between 0V and 280mV.
3. Mismatch is absolute value between pull-up and pull-dn, both are measured at same temperature and
voltage.
4. Slew rate measured from VIL(AC) to VIH(AC).
5. The absolute value of the slew rate as measured from DC to DC is equal to or greater than the slew rate as
measured from AC to AC. This is guaranteed by design and characterization.
6. This represents the step size when the OCD is near 18 ohms at nominal conditions across all process and
represents only the DRAM uncertainty.
Output slew rate load :
VTT
25 ohms
Output
(VOUT)
Reference
Point
7. DRAM output slew rate specification applies to 400Mb/sec/pin and 533Mb/sec/pin speed bins.
8. Timing skew due to DRAM output slew rate mis-match between DQS / DQS and associated DQs is
included in tDQSQ and tQHS specification.
Page 14 of 29
Rev.1.1 Jan. 2005
1Gb M-die DDR2 SDRAM
DDR2 SDRAM
IDD Specification Parameters and Test Conditions
(IDD values are for full operating range of Voltage and Temperature, Notes 1 - 5)
Symbol
Proposed Conditions
IDD0
Operating one bank active-precharge current;
tCK = tCK(IDD), tRC = tRC(IDD), tRAS = tRASmin(IDD); CKE is HIGH, CS\ is HIGH between valid
commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING
mA
Operating one bank active-read-precharge current;
IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRC = tRC (IDD), tRAS = tRASmin(IDD), tRCD = tRCD(IDD); CKE is HIGH, CS\ is HIGH between valid commands; Address businputs are SWITCHING; Data pattern is same as IDD4W
mA
Precharge power-down current;
All banks idle; tCK = tCK(IDD); CKE is LOW; Other control and address bus inputs are STABLE;
Data bus inputs are FLOATING
mA
Precharge quiet standby current;
All banks idle; tCK = tCK(IDD); CKE is HIGH, CS\ is HIGH; Other control and address bus inputsare
STABLE; Data bus inputs are FLOATING
mA
Precharge standby current;
All banks idle; tCK = tCK(IDD); CKE is HIGH, CS\ is HIGH; Other control and address bus inputs are
SWITCHING; Data bus inputs are SWITCHING
mA
IDD1
IDD2P
IDD2Q
IDD2N
IDD3P
IDD3N
IDD4W
IDD4R
IDD5B
IDD6
IDD7
Units
Active power-down current;
All banks open; tCK = tCK(IDD); CKE is LOW; Other control and
address bus inputs are STABLE; Data bus inputs are FLOATING
Fast PDN Exit MRS(12) =
0mA
mA
Slow PDN Exit MRS(12) =
1mA
mA
Active standby current;
All banks open; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS\ is HIGH
between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs
are SWITCHING
Operating burst write current;
All banks open, Continuous burst writes; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS =
tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS\ is HIGH between valid commands; Address bus
inputs are SWITCHING; Data bus inputs are SWITCHING
Operating burst read current;
All banks open, Continuous burst reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK =
tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS\ is HIGH between valid commands; Address bus inputs are SWITCHING; Data pattern is same as IDD4W
Burst auto refresh current;
tCK = tCK(IDD); Refresh command at every tRFC(IDD) interval; CKE is HIGH, CS\ is HIGH between
valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are
SWITCHING
Self refresh current;
CK and CK\ at 0V; CKE ≤ 0.2V; Other control and address bus
inputs are FLOATING; Data bus inputs are FLOATING
Page 15 of 29
mA
mA
mA
mA
Normal
mA
Low Power
mA
Operating bank interleave read current;
All bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = tRCD(IDD)-1*tCK(IDD); tCK =
tCK(IDD), tRC = tRC(IDD), tRRD = tRRD(IDD), tRCD = 1*tCK(IDD); CKE is HIGH, CS\ is HIGH
between valid commands; Address bus inputs are STABLE during DESELECTs; Data pattern is
same as IDD4R; Refer to the following page for detailed timing conditions
Notes
mA
Rev.1.1 Jan. 2005
1Gb M-die DDR2 SDRAM
DDR2 SDRAM
Notes :
1. IDD specifications are tested after the device is properly initialized
2. Input slew rate is specified by AC Parametric Test Condition
3. IDD parameters are specified with ODT disabled.
4. Data bus consists of DQ, DM, DQS, DQS\, RDQS, RDQS\, LDQS, LDQS\, UDQS, and UDQS\. IDD values must be met with all combinations of EMRS bits 10 and 11.
5. Definitions for IDD
LOW is defined as Vin ≤ VILAC(max)
HIGH is defined as Vin ≥ VIHAC(min)
STABLE is defined as inputs stable at a HIGH or LOW level
FLOATING is defined as inputs at VREF = VDDQ/2
SWITCHING is defined as:
inputs changing between HIGH and LOW every other clock cycle (once per two clocks) for address and control
signals, and
inputs changing between HIGH and LOW every other data transfer (once per clock) for DQ signals not including
masks or strobes.
For purposes of IDD testing, the following parameters are utilized
DDR2-533
DDR2-400
Parameter
4-4-4
3-3-3
Units
CL(IDD)
4
3
tCK
tRCD(IDD)
15
15
ns
tRC(IDD)
60
55
ns
tRRD(IDD)-x4/x8
7.5
7.5
ns
tRRD(IDD)-x16
10
10
ns
tCK(IDD)
3.75
5
ns
tRASmin(IDD)
45
40
ns
tRP(IDD)
15
15
ns
tRFC(IDD)
127.5
127.5
ns
Detailed IDD7
The detailed timings are shown below for IDD7.
Legend: A = Active; RA = Read with Autoprecharge; D = Deselect
IDD7: Operating Current: All Bank Interleave Read operation
All banks are being interleaved at minimum tRC(IDD) without violating tRRD(IDD) using a burst length of 4. Control and address bus
inputs are STABLE during DESELECTs. IOUT = 0mA
Timing Patterns for 8bank devices x4/ x8
-DDR2-400 3/3/3 : A0 RA0 A1 RA1 A2 RA2 A3 RA3 A4 RA4 A5 RA5 A6 RA6 A7 RA7
-DDR2-533 4/4/4 : A0 RA0 A1 RA1 A2 RA2 A3 RA3 D D A4 RA4 A5 RA5 A6 RA6 A7 RA7 D D
Timing Patterns for 8bank devices x16
-DDR2-400 3/3/3 : A0 RA0 A1 RA1 A2 RA2 A3 RA3 D D A4 RA4 A5 RA5 A6 RA6 A7 RA7 D D
-DDR2-533 4/4/4 : A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D D A4 RA4 D A5 RA5 D A6 RA6 D A7 RA7 D D D
Page 16 of 29
Rev.1.1 Jan. 2005
1Gb M-die DDR2 SDRAM
DDR2 SDRAM
DDR2 SDRAM IDD Spec Table
Symbol
TBD
90
mA
TBD
100
mA
IDD2P
TBD
12
mA
IDD2Q
TBD
30
mA
mA
IDD2N
TBD
35
IDD3P-F
TBD
30
mA
IDD3P-S
TBD
20
mA
mA
IDD3N
TBD
60
IDD4W
TBD
145
mA
IDD4R
TBD
145
mA
Normal
Symbol
TBD
270
mA
TBD
12
mA
TBD
350
mA
128Mx8(K4T1G084QM)
D5([email protected]=4) CC([email protected]=3)
Unit
IDD0
TBD
90
mA
IDD1
TBD
100
mA
IDD2P
TBD
12
mA
IDD2Q
TBD
30
mA
mA
IDD2N
TBD
35
IDD3P-F
TBD
30
mA
IDD3P-S
TBD
20
mA
mA
IDD3N
TBD
60
IDD4W
TBD
160
mA
IDD4R
TBD
150
mA
IDD5B
Normal
IDD7
Symbol
TBD
270
mA
TBD
12
mA
TBD
360
mA
64Mx16(K4T1G164QM)
D5([email protected]=4) CC([email protected]=3)
Unit
IDD0
TBD
120
mA
IDD1
TBD
135
mA
IDD2P
TBD
12
mA
IDD2Q
TBD
30
mA
IDD2N
TBD
35
mA
IDD3P-F
TBD
30
mA
IDD3P-S
TBD
20
mA
mA
IDD3N
TBD
60
IDD4W
TBD
190
mA
IDD4R
TBD
185
mA
IDD5B
IDD6
Unit
IDD1
IDD7
IDD6
D5([email protected]=4) CC([email protected]=3)
IDD0
IDD5B
IDD6
256Mx4(K4T1G044QM)
Normal
IDD7
TBD
270
mA
TBD
12
mA
TBD
430
mA
Page 17 of 29
Notes
Notes
Notes
Rev.1.1 Jan. 2005
1Gb M-die DDR2 SDRAM
DDR2 SDRAM
Input/Output capacitance
DDR2-400
Parameter
DDR2-533
Symbol
Min
Max
Min
Max
Units
1.0
2.0
1.0
2.0
pF
x
0.25
x
0.25
pF
1.0
2.0
1.0
2.0
pF
Input capacitance, CK and CK
CCK
Input capacitance delta, CK and CK
CDCK
Input capacitance, all other input-only pins
CI
Input capacitance delta, all other input-only pins
CDI
x
0.25
x
0.25
pF
Input/output capacitance, DQ, DM, DQS, DQS
CIO
2.5
4.0
2.5
4.0
pF
Input/output capacitance delta, DQ, DM, DQS, DQS
CDIO
x
0.5
x
0.5
pF
Electrical Characteristics & AC Timing for DDR2-533/400
(0 °C < TCASE < 95 °C; VDDQ = 1.8V + 0.1V; VDD = 1.8V + 0.1V)
Refresh Parameters by Device Density
Parameter
Symbol
Refresh to active/Refresh command
time
tRFC
Average periodic refresh interval
tREFI
256Mb
512Mb
1Gb
2Gb
4Gb
Units
75
105
127.5
195
327.5
ns
0 °C ≤ TCASE ≤ 85°C
7.8
7.8
7.8
7.8
7.8
µs
85 °C < TCASE ≤ 95°C
3.9
3.9
3.9
3.9
3.9
µs
Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin
Speed
DDR2-533(D5)
DDR2-400(CC)
4-4-4
3-3-3
Bin (CL - tRCD - tRP)
Units
Parameter
min
max
min
max
tCK, CL=3
5
8
5
8
ns
tCK, CL=4
3.75
8
5
8
ns
tRCD
15
15
ns
tRP
15
15
ns
tRC
55
55
ns
tRAS
40
70000
40
Page 18 of 29
70000
ns
Rev.1.1 Jan. 2005
1Gb M-die DDR2 SDRAM
DDR2 SDRAM
Timing Parameters by Speed Grade
(Refer to notes for informations related to this table at the bottom)
Parameter
Symbol
DDR2-533
DDR2-400
min
max
min
max
Units
Notes
DQ output access time
from CK/CK
tAC
-500
+500
-600
+600
ps
DQS output access
time from CK/CK
tDQSCK
-450
+450
-500
+500
ps
CK high-level width
tCH
0.45
0.55
0.45
0.55
tCK
CK low-level width
tCL
0.45
0.55
0.45
0.55
tCK
CK half period
tHP
min(tCL
, tCH)
x
min(tCL
, tCH)
x
ps
20,21
Clock cycle time, CL=x
tCK
3750
8000
5000
8000
ps
24
DQ and DM input hold
time
tDH(base)
225
x
275
x
ps
15,16,
17,20
DQ and DM input
setup time
tDS(base)
100
x
150
x
ps
15,16,
17,21
Control & Address
input pulse width for
each input
tIPW
0.6
x
0.6
x
tCK
DQ and DM input
pulse width for each
input
tDIPW
0.35
x
0.35
x
tCK
Data-out highimpedance time from
CK/CK
tHZ
x
tAC
max
x
tAC
max
ps
DQS low-impedance
time from CK/CK
tLZ(DQS)
tAC
min
tAC
max
tAC
min
tAC
max
ps
27
DQ low-impedance
time from CK/CK
tLZ(DQ)
2* tAC
min
tAC
max
2* tAC
min
tAC
max
ps
27
DQS-DQ skew for
DQS and associated
DQ signals
tDQSQ
x
300
x
350
ps
22
DQ hold skew factor
tQHS
x
400
x
450
ps
21
DQ/DQS output hold
time from DQS
tQH
tHP tQHS
x
tHP tQHS
x
ps
Write command to first
DQS latching transition
tDQSS
-0.25
0.25
-0.25
0.25
tCK
DQS input high pulse
width
tDQSH
0.35
x
0.35
x
tCK
DQS input low pulse
width
tDQSL
0.35
x
0.35
x
tCK
DQS falling edge to
CK setup time
tDSS
0.2
x
0.2
x
tCK
DQS falling edge hold
time from CK
tDSH
0.2
x
0.2
x
tCK
Page 19 of 29
Rev.1.1 Jan. 2005
1Gb M-die DDR2 SDRAM
Parameter
Symbol
DDR2 SDRAM
DDR2-533
DDR2-400
Units
min
max
min
max
2
x
2
x
tCK
Notes
Mode register set
command cycle time
tMRD
Write postamble
tWPST
0.4
0.6
0.4
0.6
tCK
Write preamble
tWPRE
0.35
x
0.35
x
tCK
Address and control
input hold time
tIH(base)
375
x
475
x
ps
14,16,
18,23
Address and control
input setup time
tIS(base)
250
x
350
x
ps
14,16,
18,22
Read preamble
tRPRE
0.9
1.1
0.9
1.1
tCK
28
Read postamble
tRPST
0.4
0.6
0.4
0.6
tCK
28
Active to active
command period for
1KB page size
products
tRRD
7.5
x
7.5
x
ns
12
Active to active
command period for
2KB page size
products
tRRD
10
x
10
x
ns
12
Four Activate Window
for 1KB page size
products
tFAW
37.5
37.5
ns
Four Activate Window
for 2KB page size
products
tFAW
50
50
ns
CAS to CAS command
delay
tCCD
2
2
tCK
Write recovery time
tWR
15
x
15
x
ns
Auto precharge write
recovery + precharge
time
tDAL
WR+tR
P
x
WR+tR
P
x
tCK
23
Internal write to read
command delay
tWTR
7.5
x
10
x
ns
33
Internal read to
precharge command
delay
tRTP
7.5
7.5
ns
11
Exit self refresh to a
non-read command
tXSNR
tRFC +
10
tRFC +
10
ns
Exit self refresh to a
read command
tXSRD
200
200
tCK
Exit precharge power
down to any non-read
command
tXP
2
x
2
x
tCK
Exit active power down
to read command
tXARD
2
x
2
x
tCK
Page 20 of 29
19
9
Rev.1.1 Jan. 2005
1Gb M-die DDR2 SDRAM
Parameter
Symbol
DDR2-533
min
Exit active power down
to read command
(slow exit, lower
power)
tXARDS
CKE minimum pulse
width
(high and low pulse
width)
t
ODT turn-on delay
DDR2 SDRAM
max
DDR2-400
min
Units
Notes
tCK
9, 10
max
6 - AL
6 - AL
CKE
3
3
t
AOND
2
2
2
2
tCK
ODT turn-on
t
AON
tAC(mi
n)
tAC(m
ax)+1
tAC(mi
n)
tAC(ma
x)+1
ns
ODT turn-on(PowerDown mode)
t
AONPD
tAC(mi
n)+2
2tCK+t
AC(ma
x)+1
tAC(mi
n)+2
2tCK+t
AC
(max)+
1
ns
ODT turn-off delay
t
AOFD
2.5
2.5
2.5
2.5
tCK
ODT turn-off
t
AOF
tAC(min)
tAC(ma
x)+ 0.6
tAC(mi
n)
tAC(max
)+ 0.6
ns
ODT turn-off (PowerDown mode)
t
AOFPD
tAC(mi
n)+2
2.5tCK
+
tAC(m
ax)+1
tAC(mi
n)+2
2.5tCK
+
tAC(ma
x)+1
ns
ODT to power down
entry latency
tANPD
3
3
tCK
ODT power down exit
latency
tAXPD
8
8
tCK
OCD drive mode
output delay
tOIT
0
Minimum time clocks
remains ON after CKE
asynchronously drops
LOW
tDelay
tIS+tCK
+tIH
12
0
tCK
12
tIS+tCK
+tIH
Page 21 of 29
36
13, 25
26
ns
ns
24
Rev.1.1 Jan. 2005
1Gb M-die DDR2 SDRAM
DDR2 SDRAM
General notes, which may apply for all AC parameters
1. Slew Rate Measurement Levels
a. Output slew rate for falling and rising edges is measured between VTT - 250 mV and VTT + 250 mV for
single ended signals. For differential signals (e.g. DQS - DQS) output slew rate is measured between
DQS - DQS = -500 mV and DQS - DQS = +500mV. Output slew rate is guaranteed by design, but is not
necessarily tested on each device.
b. Input slew rate for single ended signals is measured from dc-level to ac-level: from VIL(dc) to
VIH(ac) for rising edges and from VIH(dc) and VIL(ac) for falling edges.
For differential signals (e.g. CK - CK) slew rate for rising edges is measured from CK - CK = -250 mV to
CK - CK = +500 mV (250mV to -500 mV for falling edges).
c. VID is the magnitude of the difference between the input voltage on CK and the input voltage on CK, or
between DQS and DQS for differential strobe.
2. DDR2 SDRAM AC timing reference load
Following figure represents the timing reference load used in defining the relevant timing parameters of the
part. It is not intended to be either a precise representation of the typical system environment or a depiction of
the actual load presented by a production tester. System designers will use IBIS or other simulation tools to
correlate the timing reference load to a system environment. Manufacturers will correlate to their production
test conditions (generally a coaxial transmission line terminated at the tester electronics).
VDDQ
DUT
DQ
DQS
DQS
RDQS
RDQS
Output
VTT = VDDQ/2
Timing
reference
point
25Ω
<AC Timing Reference Load>
The output timing reference voltage level for single ended signals is the crosspoint with VTT. The output timing reference voltage level for differential signals is the crosspoint of the true (e.g. DQS) and the complement
(e.g. DQS) signal.
3. DDR2 SDRAM output slew rate test load
Output slew rate is characterized under the test conditions as shown in the following figure.
VDDQ
DUT
DQ
DQS, DQS
RDQS, RDQS
Output
VTT = VDDQ/2
Test point
25Ω
<Slew Rate Test Load>
Page 22 of 29
Rev.1.1 Jan. 2005
1Gb M-die DDR2 SDRAM
DDR2 SDRAM
4. Differential data strobe
DDR2 SDRAM pin timings are specified for either single ended mode or differential mode depending on
the setting of the EMRS “Enable DQS” mode bit; timing advantages of differential mode are realized in system design. The method by which the DDR2 SDRAM pin timings are measured is mode dependent. In single
ended mode, timing relationships are measured relative to the rising or falling edges of DQS crossing at
VREF. In differential mode, these timing relationships are measured relative to the crosspoint of DQS and its
complement, DQS. This distinction in timing methods is guaranteed by design and characterization. Note that
when differential data strobe mode is disabled via the EMRS, the complementary pin, DQS, must be tied
externally to VSS through a 20 ohm to 10 K ohm resisor to insure proper operation.
tDQSH
DQS
DQS/
DQS
tDQSL
DQS
tWPRE
tWPST
VIH(dc)
VIH(ac)
DQ
D
D
VIL(dc)
VIL(ac)
tDS
VIH(ac)
DM
D
D
DMin
tDS
DMin
tDH
tDH
VIH(dc)
DMin
DMin
VIL(ac)
VIL(dc)
<Data input (write) timing>
tCH
tCL
CK
CK/CK
CK
DQS
DQS/DQS
DQS
tRPST
tRPRE
DQ
Q
Q
tDQSQmax
Q
Q
tDQSQmax
tQH
tQH
<Data output (read) timing>
5. AC timings are for linear signal transitions.
6. These parameters guarantee device behavior, but they are not necessarily tested on each device. They
may be guaranteed by device design or tester correlation.
7. All voltages are referenced to VSS.
8. Tests for AC timing, IDD, and electrical (AC and DC) characteristics, may be conducted at nominal reference/supply voltage levels, but the related specifications and device operation are guaranteed for the full voltage range specified.
Page 23 of 29
Rev.1.1 Jan. 2005
1Gb M-die DDR2 SDRAM
DDR2 SDRAM
Specific Notes for dedicated AC parameters
9. User can choose which active power down exit timing to use via MRS(bit 12). tXARD is expected to be
used for fast active power down exit timing. tXARDS is expected to be used for slow active power down exit
timing.
10. AL = Additive Latency
11. This is a minimum requirement. Minimum read to precharge timing is AL + BL/2 providing the tRTP and
tRAS(min) have been satisfied.
12. A minimum of two clocks (2 * tCK) is required irrespective of operating frequency
13. Timings are guaranteed with command/address input slew rate of 1.0 V/ns.
14. These parameters guarantee device behavior, but they are not necessarily tested on each device. They
may be guaranteed by device design or tester correlation.
15. Timings are guaranteed with data, mask, and (DQS/RDQS in singled ended mode) input slew rate of 1.0
V/ns.
16. Timings are guaranteed with CK/CK differential slew rate of 2.0 V/ns. Timings are guaranteed for DQS
signals with a differential slew rate of 2.0 V/ns in differential strobe mode and a slew rate of 1V/ns in single
ended mode.
17. tDS and tDH derating for DDR2-400 and DDR2-533
∆tDS, ∆tDH Derating Values (ALL units in ‘ps’, Note 1 applies to entire Table)
DQS,DQS Differential Slew Rate
4.0 V/ns
3.0 V/ns
2.0 V/ns
1.8 V/ns
∆tD
S
∆tD
H
∆tD
S
∆tD
H
∆tD
S
∆tD
H
∆tD
S
2.0
125
45
125
45
125
45
1.5
83
21
83
21
83
21
1.0
0
0
0
0
0
0
12
DQ 0.9
Slew 0.8
rate
V/ns 0.7
-
-
-11
-14
-11
-14
-
-
-
-
-25
-31
-
-
-
-
-
-
0.6
-
-
-
-
-
0.5
-
-
-
-
0.4
-
-
-
-
1.6 V/ns
1.4V/ns
1.2V/ns
1.0V/ns
0.8V/ns
∆tD
H
∆tD
S
∆tD
H
∆tD
S
∆tD
H
∆tD
S
∆tD
H
∆tD
S
∆tD
H
∆tD
S
∆tD
H
-
-
-
-
-
-
-
-
-
-
-
-
95
33
-
-
-
-
-
-
-
-
-
-
12
24
24
-
-
-
-
-
-
-
-
1
-2
13
10
25
22
-
-
-
-
-
-
-13
-19
-1
-7
11
5
23
17
-
-
-
-
-31
-42
-19
-30
-7
-18
5
-6
17
6
-
-
-
-
-
-43
-59
-31
-47
-19
-35
-7
-23
5
-11
-
-
-
-
-
-
-74
-89
-62
-77
-50
-65
-38
-53
-
-
-
-
-
-
-
-
-127 -140 -115 -128 -103 -116
For all input signals the total tDS (setup time) and tDH (hold time) required is calculated by adding the
datasheet tDS(base) and tDH(base) value to the delta tDS and delta tDH derating value respectively. Example: tDS (total setup time) = tDS(base) + delta tDS.
Page 24 of 29
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DDR2 SDRAM
18. tIS and tIH (input setup and hold) derating.
tIS, tIH Derating Values for DDR2-400, DDR2-533
CK,CK Differential Slew Rate
2.0 V/ns
Command/Address Slew
rate
(V/ns)
1.5 V/ns
1.0 V/ns
∆tIS
∆tIH
∆tIS
∆tIH
∆tIS
∆tIH
Units
Notes
4.0
+187
+94
+217
+124
+247
+154
ps
1
3.5
+179
+89
+209
+119
+239
+149
ps
1
3.0
+167
+83
+197
+113
+227
+143
ps
1
2.5
+150
+75
+180
+105
+210
+135
ps
1
2.0
+125
+45
+155
+75
+185
+105
ps
1
1.5
+83
+21
+113
+51
+143
+81
ps
1
1.0
0
0
+30
+30
+60
60
ps
1
0.9
-11
-14
+19
+16
+49
+46
ps
1
0.8
-25
-31
+5
-1
+35
+29
ps
1
0.7
-43
-54
-13
-24
+17
+6
ps
1
0.6
-67
-83
-37
-53
-7
-23
ps
1
0.5
-110
-125
-80
-95
-50
-65
ps
1
0.4
-175
-188
-145
-158
-115
-128
ps
1
0.3
-285
-292
-255
-262
-225
-232
ps
1
0.25
-350
-375
-320
-345
-290
-315
ps
1
0.2
-525
-500
-495
-470
-465
-440
ps
1
0.15
-800
-708
-770
-678
-740
-648
ps
1
∆tIS and ∆tIH Derating Values for DDR2-667, DDR2-800
CK,CK Differential Slew Rate
2.0 V/ns
Command/Address Slew
rate
(V/ns)
1.5 V/ns
1.0 V/ns
∆tIS
∆tIH
∆tIS
∆tIH
∆tIS
∆tIH
Units
Notes
4.0
+150
+94
+180
+124
+210
+154
ps
1
3.5
+143
+89
+173
+119
+203
+149
ps
1
3.0
+133
+83
+163
+113
+193
+143
ps
1
2.5
+120
+75
+150
+105
+180
+135
ps
1
2.0
+100
+45
+130
+75
+160
+105
ps
1
1.5
+67
+21
+97
+51
+127
+81
ps
1
1.0
0
0
+30
+30
+60
+60
ps
1
0.9
-5
-14
+25
+16
+55
+46
ps
1
0.8
-13
-31
+17
-1
+47
+29
ps
1
0.7
-22
-54
+8
-24
+38
+6
ps
1
0.6
-34
-83
-4
-53
+26
-23
ps
1
0.5
-60
-125
-30
-95
0
-65
ps
1
0.4
-100
-188
-70
-158
-40
-128
ps
1
0.3
-168
-292
-138
-262
-108
-232
ps
1
0.25
-200
-375
-170
-345
-140
-315
ps
1
0.2
-325
-500
-295
-470
-265
-440
ps
1
0.15
-517
-708
-487
-678
-457
-648
ps
1
0.1
-1000
-1125
-970
-1095
-940
-1065
ps
1
Page 25 of 29
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DDR2 SDRAM
For all input signals the total tIS (setup time) and tIH (hold time) required is calculated by adding the
datasheet tIS(base) and tIH(base) value to the delta tIS and delta tIH derating value respectively. Example:
tIS (total setup time) = tIS(base) + delta tIS
19. The maximum limit for this parameter is not a device limit. The device will operate with a greater value for
this parameter, but system performance (bus turnaround) will degrade accordingly.
20. MIN ( tCL, tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this value can be greater than the minimum specification limits for tCL and tCH). For
example, tCL and tCH are = 50% of the period, less the half period jitter ( tJIT(HP)) of the clock source, and
less the half period jitter due to crosstalk ( tJIT(crosstalk)) into the clock traces.
21. tQH = tHP – tQHS, where:
tHP = minimum half clock period for any given cycle and is defined by clock high or clock low ( tCH, tCL).
tQHS accounts for:
1) The pulse duration distortion of on-chip clock circuits; and
2) The worst case push-out of DQS on one transition followed by the worst case pull-in of DQ on the
next transition, both of which are, separately, due to data pin skew and output pattern effects, and pchannel to n-channel variation of the output drivers.
22. tDQSQ: Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the
output drivers as well as output slew rate mismatch between DQS / DQS and associated DQ in any given
cycle.
23. DAL = WR + RU{tRP(ns)/tCK(ns)}, where RU stands for round up.
WR refers to the tWR parameter stored in the MRS. For tRP, if the result of the division is not already an integer, round up to the next highest integer. tCK refers to the application clock period.
Example: For DDR533 at tCK = 3.75ns with tWR programmed to 4 clocks.
tDAL = 4 + (15 ns / 3.75 ns) clocks = 4 + (4) clocks = 8 clocks.
24. The clock frequency is allowed to change during self–refresh mode or precharge power-down mode. In
case of clock frequency change during precharge power-down, a specific procedure is required as described
in DDR2 device operation
25. ODT turn on time min is when the device leaves high impedance and ODT resistance begins to turn on.
ODT turn on time max is when the ODT resistance is fully on. Both are measured from tAOND.
26. ODT turn off time min is when the device starts to turn off ODT resistance.
ODT turn off time max is when the bus is in high impedance. Both are measured from tAOFD.
27. tHZ and tLZ transitions occur in the same access time as valid data transitions. These parameters are referenced to a specific voltage level which specifies when the device output is no longer driving (tHZ), or begins
driving (tLZ). Following figure shows a method to calculate the point when device is no longer driving (tHZ), or
begins driving (tLZ) by measuring the signal at two different voltages. The actual voltage measurement points
are not critical as long as the calculation is consistent.
28. tRPST end point and tRPRE begin point are not referenced to a specific voltage level but specify when
the device output is no longer driving (tRPST), or begins driving (tRPRE). Following figure shows a method to
calculate these points when the device is no longer driving (tRPST), or begins driving (tRPRE) by measuring
the signal at two different voltages. The actual voltage measurement points are not critical as long as the calPage 26 of 29
Rev.1.1 Jan. 2005
1Gb M-die DDR2 SDRAM
DDR2 SDRAM
culation is consistent.
These notes are referenced in the “Timing parameters by speed grade” tables for DDR2-400/533/667 and
DDR2-800.
VOH + x mV
VTT + 2x mV
VOH + 2x mV
VTT + x mV
tLZ
tHZ
tRPRE begin point
tRPST end point
T2
VOL + 2x mV
VTT - x mV
VOL + x mV
VTT - 2x mV
T1
T2
T1
tHZ,tRPST end point = 2*T1-T2
tLZ,tRPRE begin point = 2*T1-T2
<Test method for tLZ, tHZ, tRPRE and tRPST>
29. Input waveform timing with differential data strobe enabled MR[bit10]=0, is referenced from the input signal crossing at the VIH(ac) level to the differential data strobe crosspoint for a rising signal, and from the input
signal crossing at the VIL(ac) level to the differential data strobe crosspoint for a falling signal applied to the
device under test.
30. Input waveform timing with differential data strobe enabled MR[bit10]=0, is referenced from the input signal crossing at the VIH(dc) level to the differential data strobe crosspoint for a rising signal and VIL(dc) to the
differential data strobe crosspoint for a falling signal applied to the device under test.
Differential Input waveform timing
DQS
DQS
tDS
tDH
tDS
tDH
VDDQ
VIH(ac) min
VIH(dc) min
VREF(dc)
VIL(dc) max
VIL(ac) max
VSS
Page 27 of 29
Rev.1.1 Jan. 2005
1Gb M-die DDR2 SDRAM
DDR2 SDRAM
31. Input waveform timing is referenced from the input signal crossing at the VIH(ac) level for a rising signal
and VIL(ac) for a falling signal applied to the device under test.
32. Input waveform timing is referenced from the input signal crossing at the VIH(dc) level for a rising signal
and VIL(dc) for a falling signal applied to the device under test.
CK
CK
tIS
tIH
tIS
tIH
VDDQ
VIH(ac) min
VIH(dc) min
VREF(dc)
VIL(dc) max
VIL(ac) max
VSS
33. tWTR is at lease two clocks (2 * tCK) independent of operation frequency.
34. Input waveform timing with single-ended data strobe enabled MR[bit10] = 1, is referenced from the input
signal crossing at the VIH(ac) level to the single-ended data strobe crossing VIH/L(dc) at the start of its transition for a rising signal, and from the input signal crossing at the VIL(ac) level to the single-ended data strobe
crossing VIH/L(dc) at the start of its transition for a falling signal applied to the device under test. The DQS
signal must be monotonic between Vil(dc)max and Vih(dc)min.
35. Input waveform timing with single-ended data strobe enabled MR[bit10] = 1, is referenced from the input
signal crossing at the VIH(dc) level to the single-ended data strobe crossing VIH/L(ac) at the end of its transition for a rising signal, and from the input signal crossing at the VIL(dc) level to the single-ended data strobe
crossing VIH/L(ac) at the end of its transition for a falling signal applied to the device under test. The DQS
signal must be monotonic between Vil(dc)max and Vih(dc)min.
36. tCKEmin of 3 clocks means CKE must be registered on three consecutive positive clock edges. CKE
must remain at the valid input level the entire time it takes to achieve the 3 clocks of registeration. Thus, after
any cKE transition, CKE may not transitioin from its valid level during the time period of tIS + 2*tCK + tIH.
Page 28 of 29
Rev.1.1 Jan. 2005
1Gb M-die DDR2 SDRAM
DDR2 SDRAM
Revision History
Version 0.1 (Feb. 2004)
- Initial Release
Version 0.2 (May 2004)
- Corrected the Ordering Information
Version 0.3 (Jul. 2004)
- Corrected Typo
Version 1.0 (Dec. 2004)
- Added current values at DDR2-400
Version 1.1 (Jan. 2005)
- Revised current test AC spec condition
- Added derating table
Page 29 of 29
Rev.1.1 Jan. 2005