Ordering number:ENN6441 N-Channel and P-Channel Silicon MOSFETs CPH5605 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2168 [CPH5605] 2.9 5 4 0.15 3 2.8 0.05 0.6 1.6 0.6 · The CPH5605 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON resistance and high-speed switching, thereby enabling high-density mounting. · 2.5V drive. 0.2 Features 1 2 0.4 1 : Drain1 2 : Drain2 3 : Gate2 4 : Source 5 : Gate1 SANYO : CPH5 Specifications 0.9 0.7 0.2 0.95 0.4 Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Ratings Conditions N-channel P-channel Unit VDSS VGSS 20 –20 V ±10 ±10 V ID 1.4 –1 A 5.6 –4 A 0.9 W 150 ˚C –55 to +150 ˚C Drain Current (pulse) IDP PW≤10µs, duty cycle≤1% Allowable Power Dissipation Mounted on a ceramic board (600mm2×0.8mm) 1unit Channel Temperature PD Tch Storage Temperature Tstg Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Ratings min typ max Unit [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance V(BR)DSS IDSS IGSS VGS(off) 20 V VDS=20V, VGS=0 10 µA ±10 µA 1.3 V 200 260 mΩ 260 360 mΩ VGS=±8V, VDS=0 VDS=10V, ID=1mA 0.4 1.8 RDS(on)1 VDS=10V, ID=700mA ID=700mA, VGS=4V RDS(on)2 ID=400mA, VGS=2.5V | yfs | Static Drain-to-Source On-State Resistance ID=1mA, VGS=0 Marking : FE 2.5 S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 30300TS (KOTO) TA-2490 No.6441-1/6 CPH5605 Continued from preceding page. Parameter Symbol Ratings Conditions min typ max Unit Input Capacitance Ciss VDS=10V, f=1MHz 90 pF Output Capacitance Coss 60 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz VDS=10V, f=1MHz 28 pF Turn-ON Delay Time td(on) See specified Test Circuit 10 ns tr See specified Test Circuit 20 ns td(off) See specified Test Circuit 20 ns tf See specified Test Circuit 20 ns nC Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Qg VDS=10V, VGS=10V, ID=1.4A 6 1 nC 2 nC Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd VDS=10V, VGS=10V, ID=1.4A VDS=10V, VGS=10V, ID=1.4A Diode Forward Voltage [P-channel] VSD IS=1.4A, VGS=0 V(BR)DSS IDSS ID=–1mA, VGS=0 Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current IGSS VGS(off) | yfs | Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance 0.9 1.2 V –10 µA –20 V VDS=–20V, VGS=0 VGS=±8V, VDS=0 VDS=–10V, ID=–1mA VDS=–10V, ID=–500mA –0.4 1.0 ±10 µA –1.4 V 1.4 S RDS(on)1 ID=–500mA, VGS=–4V 420 550 mΩ RDS(on)2 ID=–300mA, VGS=–2.5V 630 890 mΩ VDS=–10V, f=1MHz VDS=–10V, f=1MHz 100 pF 60 pF 25 pF 10 ns Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) VDS=–10V, f=1MHz See specified Test Circuit tr See specified Test Circuit 25 ns td(off) See specified Test Circuit 27 ns tf See specified Test Circuit 32 ns nC Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Qg VDS=–10V, VGS=–10V, ID=–1.0A 5 1 nC 1 nC Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd VDS=–10V, VGS=–10V, ID=–1.0A VDS=–10V, VGS=–10V, ID=–1.0A Diode Forward Voltage VSD IS=–1.0A, VGS=0 –0.9 –1.5 V Electrical Connection S G1 D1 G2 D2 (Top view) Switching Time Test Circuit Switching Time Test Circuit [N-channel] [P-channel] VDD=10V VDD=--10V VIN VIN 4V 0V ID=700mA RL=14.3Ω VIN D PW=10µs D.C.≤1% VOUT 0V --4V D PW=10µs D.C.≤1% G P.G ID=--500mA RL=20Ω VIN VOUT G 50Ω P.G S 50Ω S No.6441-2/6 CPH5605 8.0V 6.0V 1.2 V 2.0V 1.0 0.8 0.6 VGS=1.5V --6 . --1 0.0 V 2.5 Drain Current, ID – A 3. 0V 4.0 10. 0V Drain Current, ID – A 1.6 1.4 0V --8.0V --1.4 V 1.8 ID -- VDS --1.6 --1.2 [Pch] .0V --3 .0V 2.0 [Nch] --4 ID -- VDS V --2.5 --1.0 --0.8 --2.0V --0.6 --0.4 0.4 --0.2 0.2 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 IT01074 ID -- VGS [Nch] 4.0 0 1.0 Drain-to-Source Voltage, VDS – V --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 Drain-to-Source Voltage, VDS – V IT00780 ID -- VGS [Pch] --3.0 VDS=10V VDS=--10V Ta= --25 °C 25° C --2.5 75 °C 3.0 Drain Current, ID – A 3.5 Drain Current, ID – A 0 2.5 2.0 1.5 1.0 --2.0 2 5° C 0.1 75 °C 0 Ta= --25 °C 0 VGS=--1.5V --1.5 --1.0 --0.5 0.5 0 0 0 0.5 1.0 2.0 2.5 3.0 3.5 IT01075 RDS(on) -- VGS [Nch] 500 0 Ta=25°C 450 400 350 300 ID=400mA 700mA 250 200 150 100 50 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 Gate-to-Source Voltage, VGS – V IT00781 RDS(on) -- VGS [Pch] Ta=25°C 900 800 ID=--0.3A 700 --0.5A 600 500 400 300 200 100 0 0 0 1 2 3 4 5 7 6 8 9 IT01076 RDS(on) -- Ta [Nch] 40 I D= 250 Static Drain-to-Source On-State Resistance, RDS(on) – mΩ V =2.5 , VGS 0mA V 4.0 S= , VG 0mA 70 I D= 200 150 100 50 0 --60 --40 --20 0 20 40 60 80 --1 --2 --3 100 Ambient Temperature, Ta – °C 120 140 160 IT01077 --4 --5 --6 --7 --8 --9 --10 Gate-to-Source Voltage, VGS – V IT00782 RDS(on) -- Ta [Pch] 1000 350 300 0 10 Gate-to-Source Voltage, VGS – V 400 Static Drain-to-Source On-State Resistance, RDS(on) – mΩ --0.5 1000 Static Drain-to-Source On-State Resistance, RDS(on) – mΩ Static Drain-to-Source On-State Resistance, RDS(on) – mΩ 1.5 Gate-to-Source Voltage, VGS – V 900 800 V --2.5 S= VG , A --0.3 I D= V --4.0 S= VG , -0.5A I D=- 700 600 500 400 300 200 100 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta – °C 120 140 160 IT00783 No.6441-3/6 CPH5605 Ta 1.0 °C 75 7 5 3 2 2 3 5 7 0.1 Drain Current, ID – A 5 7 10 IT01078 IF -- VSD [Nch] 10 7 5 3 2 2 3 5 7 1.0 2 3 0.1 7 5 3 2 0.01 7 5 3 2 0.001 3 2 25 °C 25 =-- 1.0 7 Ta °C °C 5 75 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 IT00784 IF -- VSD --10 7 5 [Pch] VGS = 0 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 0 0.3 0.6 0.9 1.2 1.5 Diode Forward Voltage, VSD – V IT01079 SW Time -- ID [Nch] 1000 7 5 0 3 2 tr 100 7 5 tf td(off) 3 2 10 7 5 td(on) 3 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 Diode Forward Voltage, VSD – V IT00785 SW Time -- ID [Pch] 1000 7 5 VDD=10V VGS=4V VDD=--10V VGS=--4V 3 2 100 7 5 tr tf 3 td ( o 2 ff) td(on) 10 7 5 3 2 2 1.0 1.0 0.1 2 3 5 7 2 1.0 3 5 Drain Current, ID – A Ciss, Coss, Crss -- VDS 1000 7 3 7 10 IT01080 [Nch] f=1MHz 3 3 Ciss 7 Coss 5 3 Crss 2 3 5 7 --1.0 2 3 7 5 100 7 --0.1 Ciss, Coss, Crss -- VDS 1000 5 2 5 Drain Current, ID – A Ciss, Coss, Crss -- pF Ciss, Coss, Crss -- pF 5 Drain Current, ID – A Forward Current, IF – A 1.0 7 5 3 2 7 0.1 --0.01 VGS = 0 Ta=7 5° 25°C C --25° C Forward Current, IF – A °C 25 °C 25 =-- 2 [Pch] VDS=--10V C 25°C --25°C 3 Forward Transfer Admittance, | yfs | – S 5 yfs -- ID 10 Switching Time, SW Time – ns Forward Transfer Admittance, | yfs | – S 7 0.1 0.01 Switching Time, SW Time – ns [Nch] VDS=10V Ta=75 ° yfs -- ID 10 5 7 --10 IT00786 [Pch] f=1MHz 2 Ciss 100 Coss 7 5 Crss 3 2 2 10 10 0 2 4 6 8 10 12 14 16 Drain-to-Source Voltage, VDS – V 18 20 IT01081 0 --2 --4 --6 --8 --10 --12 --14 --16 Drain-to-Source Voltage, VDS – V --18 --20 IT00787 No.6441-4/6 CPH5605 VGS -- Qg 10 VDS=10V ID=1.4A 8 7 6 5 4 3 2 --8 --7 --6 --5 --4 --3 --2 --1 0 0 1 0 10 7 5 2 3 4 5 6 Total Gate Charge, Qg – nC IT01082 ASO [Nch] IDP=5.6A ms 10 0m 7 5 DC Operation in this area is limited by RDS(on). 3 2 0.1 7 5 s op era tio n Ta=25°C Single pulse 1 unit 3 2 0.1 2 3 5 7 1.0 2 3 5 7 3.0 3.5 4.0 4.5 [Pch] ms ID=--1A DC 3 2 --0.1 7 5 100µs 1m 10 7 5 5.0 IT00788 s 10 0m s op era tio Operation in this area is limited by RDS(on). n Ta=25°C Single pulse 1 unit Mounted on a ceramic board (600mm2×0.8mm) 2 10 Drain-to-Source Voltage, VDS – V PD -- Ta 1.2 2.5 IDP=--4A --1.0 3 2 Mounted on a ceramic board (600mm2×0.8mm) 0.01 2.0 3 2 10 ID=1.4A 1.5 ASO --10 7 5 s 1.0 1.0 Total Gate Charge, Qg – nC 100µs 1m 3 2 0.5 0 Drain Current, ID – A Drain Current, ID – A [Pch] VDS=--10V ID=--1A --9 1 Allowable Power Dissipation, PD – W VGS -- Qg --10 Gate-to-Source Voltage, VGS – V 9 Gate-to-Source Voltage, VGS – V [Nch] 3 5 IT01083 --0.01 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS – V 2 3 5 IT00790 [Nch, Pch] 1.0 M 0.9 ou nte do 0.8 na ce ram 0.6 ic bo ard (6 00 0.4 mm ×0 2 .8m m) 0.2 1u nit 0 0 20 40 60 80 100 120 Ambient Temperature, Ta – °C 140 160 IT01084 No.6441-5/6 CPH5605 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2000. Specifications and information herein are subject to change without notice. PS No.6441-6/6