BUL85D ® MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ ■ ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED HIGH RUGGEDNESS APPLICATIONS 110V AC ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS UP TO 100 W ■ SWITCH MODE POWER SUPPLIES 3 ■ DESCRIPTION The BUL85D is manufactured using Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. The BUL85D is designed for use in 110V AC electronic transformers for halogen lamps. 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter V CES Collector-Emitter Voltage (V BE = 0) V CEO Collector-Emitter Voltage (I B = 0) VEBO Emitter-Base Voltage (I C = 0, IB < 2.5 A, t p < 10µs, T J < 150 o C) Collector Current IC ICM Collector Peak Current (t p < 5 ms) Value Unit 500 V 250 V V (BR)EBO V 8 A 15 A A Base Current 4 IBM Base Peak Current (t p < 5 ms) 8 A P tot Total Dissipation at Tc = 25 o C 80 W Tstg Storage Temperature IB Tj Max. Operating Junction Temperature January 2002 -65 to 150 o C 150 o C 1/7 BUL85D THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o 1.56 62.5 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions I CES Collector Cut-off Current (V BE = 0) V CE = 500 V V CE = 500 V IEBO Emitter Cut-off Current (I C = 0) V EB = 9 V Emitter-Base Breakdown Voltage (I C = 0) I E = 10mA V(BR)EBO V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) 10 I C = 10 mA L = 25 mH Collector-Emitter Saturation Voltage IC = 2 A IC = 4 A IC = 8 A I B = 0.4 A I B = 0.8 A I B = 1.6 A V BE(sat) ∗ Base-Emitter Saturation Voltage IC = 2 A IC = 8 A I B = 0.4 A I B = 1.6 A DC Current Gain I C = 10 mA I C = 0.5 A I C = 14 A V CE = 5 V V CE = 5 V V CE = 10 V ts tf RESISTIVE LOAD Storage Time Fall Time IC = 4 A V CC = 150 V I B(on) = -I B(off) = 0.8 A (see figure 2) t p ≥ 30 µs ts tf INDUCTIVE LOAD Storage Time Fall Time IC = 4 A I B = 0.8 A R BB = 0 Ω (see figure 1) Vf Diode Forward Voltage I C = 5 A ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % 2/7 Typ. T j = 125 o C VCE(sat) ∗ h FE ∗ Min. V CL = 200 V V BE(off) = -3 V t p ≥ 30µs Max. Unit 100 500 µA µA 100 µA 18 V 250 V 0.1 0.3 0.6 1.2 V V V 1.1 1.5 V V 10 60 10 4 1.2 1.8 2.4 250 µs ns µs ns 0.7 50 1.5 V BUL85D Safe Operating Area Derating Curve DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/7 BUL85D Switching Time Resistive Load Switching Time Inductive Load Diode Forward Voltage Reverse Biased SOA 4/7 BUL85D Figure 1: Inductive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier Figure 2: Resistive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 5/7 BUL85D TO-220 MECHANICAL DATA DIM. mm MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.052 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.202 G1 2.40 2.70 0.094 0.106 H2 10.00 10.40 0.394 L2 L4 16.40 13.00 0.409 0.645 14.00 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.260 L9 3.50 3.93 0.137 0.154 3.85 0.147 M DIA. 2.60 3.75 0.102 0.151 P011CI 6/7 BUL85D Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2002 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 7/7