STMICROELECTRONICS HCF40109BEY

HCC/HCF40109B
QUAD LOW-TO-HIGH VOLTAGE LEVEL SHIFTER
.
.
.
.
.
..
..
INDEPENDENCE OF POWER SUPPLY SEQUENCE CONSIDERATIONS – VCC CAN EXCEED VDD, INPUT SIGNALS CAN EXCEED
BOTH VCC AND VDD
UP AND DOWN LEVEL-SHIFTING CAPABILITY
THREE-STATE OUTPUTS WITH SEPARATE
ENABLE CONTROLS
STANDARDIZED SYMMETRICAL OUTPUT
CHARACTERISTICS
QUIESCENT CURRENT SPECIFIED AT 20V
FOR HCC DEVICE
5V, 10V, AND 15V PARAMETRIC RATINGS
INPUT CURRENT OF 100nA AT 18V AND 25°C
FOR HCC DEVICE
100% TESTED FOR QUIESCENT CURRENT
MEETS ALL REQUIREMENTS OF JEDEC TENTATIVE STANDARD N°. 13A, ”STANDARD
SPECIFICATIONS FOR DESCRIPTION OF ”B”
SERIES CMOS DEVICES”
DESCRIPTION
The HCC40109B (extended temperature range)
and HCF40109B (intermediate temperature range)
are monolithic integrated circuits, available in 16lead dual in-line plastic or ceramic package and
plastic micropackage. The HCC/HCF40109B contains four low-to-high-voltage level-shifting circuits.
Each circuit will shift a low-voltage digital-logic input
signal (A, B, C, D) with logical 1 = VCC and logical 0
= VSS to a higher-voltage output signal (E, F, G, H)
with logical 1 = VDD and logical 0 = VSS. The
HCC/HCF40109B, unlike other low-to-high levelshifting circuits, does not require the presence of the
high-voltage supply (VDD) before the application of
either the low-voltage supply (VCC) or the input signals. There are no restrictions on the sequence of
application of VDD, VCC, or the input signals. In addition, there are no restrictions on the relative magnitudes od the supply voltages or input signals within
the device maximum ratings ; VCC may exceed VDD,
and input signals may exceed VCC, and VDD. When
operated in the mode VCC
VDD, the
HCC/HCF40109B, will operate as a high-to-low
level-shifter. The HCC/HCF 40109B also features
individual three-state output capability. A low level
on any of the separately enabled three-state output
June 1989
controls produces a high-impedance state in the
corresponding output.
EY
(Plastic Package)
C1
(Micro package)
F
(Ceramic Frit Seal Package)
C1
(Plastic Chip Carrier)
ORDER CODES :
HCC40109BF
HCF40109BM1
HCF40109BEY HCF40109BC1
PIN CONNECTIONS
1/12
HCC/HCF40109B
FUNCTIONAL DIAGRAM
1 of 4 units
ABSOLUTE MAXIMUM RATINGS
Symbol
V DD *
Parameter
Supply Voltage : HC C Types
H C F Types
Value
Unit
– 0.5 to + 20
– 0.5 to + 18
V
V
Vi
Input Voltage
– 0.5 to V DD + 0.5
V
II
DC Input Current (any one input)
± 10
mA
Total Power Dissipation (per package)
Dissipation per Output Transistor
for T o p = Full Package-temperature Range
200
mW
100
mW
Pto t
T op
Operating Temperature : HCC Types
H CF Types
– 55 to + 125
– 40 to + 85
°C
°C
T stg
Storage Temperature
– 65 to + 150
°C
Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification
is not implied. Exposure to absolute maximum rating conditions for external periods may affect device reliability.
* All voltage are with respect to VSS (GND).
RECOMMENDED OPERATING CONDITIONS
Symbol
V DD
VI
Top
Parameter
Supply Voltage : H CC Types
H C F Types
Input Voltage
Operating Temperature : HCC Types
H CF Types
LOGIC DIAGRAM
Value
Unit
3 to 18
3 to 15
V
V
0 to V DD
V
– 55 to + 125
– 40 to + 85
°C
°C
TRUTH TABLE
Inputs
Mode
Low to High
Level Shift
LOGIC 0 = LOW (VSS)
LOGIC 1 = VCC
2/12
Outputs
Enable
A, B, C , D A, B, C , D E , F , G , H
0
1
0
1
1
1
X
0
Z
X = Don’t Care.
Z = High Impedance.
at INPUTS and VDD at OUTPUTS.
HCC/HCF40109B
STATIC ELECTRICAL CHARACTERISTICS (over recommended operating conditions)
Test Conditions
Symbol
IL
V OH
V OL
Parameter
Quiescent
Current
VI
(V)
VO
(V)
|IO| V CC V DD
(µA) (V) (V)
I OL
IIH , IIL
Min.
0.02
1
30
HCC
Types 0/15
0.02
2
60
15
4
0.02
4
120
0/20
20
20
0.04
20
600
0/ 5
HCF
0/10
Types
0/15
5
4
0.02
4
30
10
8
0.02
8
60
15
16
0.02
16
120
0/ 5
< 1
5
4.95
4.95
4.95
0/10
< 1
10
9.95
9.95
9.95
0/15
< 1
15
14.95
14.95
14.95
5/0
< 1
5
0.05
0.05
0.05
< 1
10
0.05
0.05
0.05
< 1
< 1
Input Low Voltage
1/9
< 1
15
0.05
0.05
10
3.5
3.5
3.5
10
15
7
7
7
5
10
1.5
1.5
1.5
10
15
3
3
3
0/ 5
HCC
0/ 5
Types
0/10
2.5
5
–2
– 1.6 – 3.2
– 1.15
4.6
5
– 0.64
– 0.51
– 0.36
9.5
10
– 1.6
– 1.3 – 2.6
– 0.9
0/15
13.5
15
– 4.2
– 3.4 – 6.8
– 2.4
0/ 5
HCF
0/ 5
Types
0/10
2.5
5
– 1.53
– 1.36 – 3.2
– 1.1
4.6
5
– 0.52
– 0.44
– 0.36
9.5
10
– 1.3
– 1.1 – 2.6
– 0.9
0/15
13.5
15
– 3.6
– 3.0 – 6.8
– 2.4
0/ 5
0.4
5
0.64
0.51
1
0.36
0.5
10
1.6
1.3
2.6
0.9
1.5
15
4.2
3.4
6.8
2.4
0/ 5
0.4
5
0.52
0.44
1
0.36
HCF
0/10
Types
0/15
0.5
10
1.3
1.1
2.6
0.9
1.5
15
3.6
3.0
6.8
2.4
HCC
0/10
Types
0/15
HCC
0/18
Types
HCF
0/15
Types
–1
V
V
mA
mA
18
± 0.1
± 10-5 ± 0.1
±1
15
± 0.3
± 10-5 ± 0.3
±1
Any Input
V
0.05
5
–1
µA
V
10/0
1/9
Unit
Max.
1
Input High Voltage
Input
Leakage
Current
Typ. Max.
2
Output Low
Voltage
Output
Sink
Current
Min.
5
Output High
Voltage
Output
Drive
Current
Max.
T Hig h*
10
1.5/13.5 < 1
I OH
Min
25°C
0/ 5
1.5/13.5 < 1
V IL
T L o w*
0/10
15/0
V IH
Value
µA
* TLow = – 55°C for HCC device : – 40°C for HCF device.
* THigh = + 125°C for HCC device : + 85°C for HCF device.
The Noise Margin for both ”1” and ”0” level is : 1V min. with VDD = 5V, 2V min. with VDD = 10V, 2.5V min. with VDD = 15V.
** Forced output disabled.
3/12
HCC/HCF40109B
STATIC ELECTRICAL CHARACTERISTICS (continued)
Test Conditions
Symbol
I OH ,
I OL**
CI
Parameter
3-State
Output
Leakage
Current
Value
IO V CC V DD
(V) (V) (V)
25 °C
VI
(V)
VO
(V)
HCC
Types 0/18
0/18
18
± 0.4
±10 - 4 ± 0.4
± 12
HCF
Types 0/15
0/15
15
± 1.0
±10 - 4 ± 1.0
± 7.5
Input Capacitance
T L ow*
Min. Max.
Min.
T Hig h*
Typ. Max.
Min.
Unit
Max.
µA
Any Input
5
7.5
pF
* TLow = – 55°C for HCC device : – 40°C for HCF device.
* THigh = + 125°C for HCC device : + 85°C for HCF device.
The Noise Margin for both ”1” and ”0” level is : 1V min. with VDD = 5V, 2V min. with VDD = 10V, 2.5V min. with VDD = 15V.
** Forced output disabled.
DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25°C, CL = 50pF, RL = 200kΩ,
typical temperature coefficient for all VDD values is 0.3%/°C, all input rise and fall time = 20ns)
Symbol
t PHL ,
tPLH
Parameter
Propagation Delay Time
(data input to output)
High to Low Level
Shifting Mode
L-H
H-L
Low to High Level
L-H
H-L
tPHZ
3-State Disable Delay Time
Output High to High Impedance
L-H
H-L
tPZ H
High Impedance to Output High
L-H
H-L
tPLZ
Output Low to High Impedance
L-H
H-L
4/12
Test Conditions
V CC (V) V DD (V)
5
10
5
15
10
15
10
5
15
5
15
10
5
10
5
15
10
15
10
5
15
5
15
10
5
10
5
15
10
15
10
5
15
5
15
10
5
10
5
15
10
15
10
5
15
5
15
10
5
10
5
15
10
15
10
5
15
5
15
10
Min.
Value
Typ.
300
220
180
850
850
290
130
120
70
230
230
80
60
50
35
120
120
40
320
230
180
800
800
280
370
300
250
850
850
350
Max.
600
440
360
1600
1600
580
260
240
140
460
460
160
120
100
70
240
240
80
640
460
360
1500
1500
560
740
600
500
1600
1600
700
Unit
ns
ns
ns
ns
ns
HCC/HCF40109B
DYNAMIC ELECTRICAL CHARACTERISTICS (continued)
Symbol
tPZL
Parameter
Shifting Mode
High Impedance to Output Low
L-H
H-L
t T HL,
t T LH
Transition Time
L-H
H-L
Test Conditions
V CC (V) V DD (V)
5
10
5
15
10
15
10
5
15
5
15
10
5
10
5
15
10
15
10
5
15
5
15
10
Min.
Value
Typ.
100
80
40
120
120
40
50
40
40
100
100
50
Max.
200
160
80
240
240
80
100
80
80
200
200
100
Unit
ns
ns
Output Low (sink) Current Characteristics.
Output High (source) Current Characteristics.
Typical Transition Timevs. Load Capacitance.
Typical High-to-low Propagation Delay Time vs.
Load Capacitance.
5/12
HCC/HCF40109B
Typical Low-to-high Propagation Delay Time vs.
Load Capacitance.
Typical Input Switching vs. High-level Supply Voltage.
High-level Supply Voltage vs. Low-level Supply
Voltage.
Typical Dynamic Power Dissipation vs. Input Frequency.
TEST CIRCUITS
Output Enable Delay Times Test Circuit and Waveforms.
6/12
HCC/HCF40109B
TEST CIRCUITS (continued)
Quiescent Device Current.
Input Voltage.
Input Leakage Current.
Dynamic Power Dissipation.
7/12
HCC/HCF40109B
Plastic DIP16 (0.25) MECHANICAL DATA
mm
DIM.
MIN.
a1
0.51
B
0.77
TYP.
inch
MAX.
MIN.
TYP.
MAX.
0.020
1.65
0.030
0.065
b
0.5
0.020
b1
0.25
0.010
D
20
0.787
E
8.5
0.335
e
2.54
0.100
e3
17.78
0.700
F
7.1
0.280
I
5.1
0.201
L
Z
3.3
0.130
1.27
0.050
P001C
8/12
HCC/HCF40109B
Ceramic DIP16/1 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
20
0.787
B
7
0.276
D
E
3.3
0.130
0.38
e3
0.015
17.78
0.700
F
2.29
2.79
0.090
0.110
G
0.4
0.55
0.016
0.022
H
1.17
1.52
0.046
0.060
L
0.22
0.31
0.009
0.012
M
0.51
1.27
0.020
0.050
N
P
Q
10.3
7.8
8.05
5.08
0.406
0.307
0.317
0.200
P053D
9/12
HCC/HCF40109B
SO16 (Narrow) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
A
a1
inch
MAX.
MIN.
TYP.
1.75
0.1
0.068
0.2
a2
MAX.
0.004
0.007
1.65
0.064
b
0.35
0.46
0.013
0.018
b1
0.19
0.25
0.007
0.010
C
0.5
0.019
c1
45° (typ.)
D
9.8
E
5.8
10
0.385
6.2
0.228
0.393
0.244
e
1.27
0.050
e3
8.89
0.350
F
3.8
4.0
0.149
0.157
G
4.6
5.3
0.181
0.208
L
0.5
1.27
0.019
0.050
M
S
0.62
0.024
8° (max.)
P013H
10/12
HCC/HCF40109B
PLCC20 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
9.78
10.03
0.385
0.395
B
8.89
9.04
0.350
0.356
D
4.2
4.57
0.165
0.180
d1
2.54
0.100
d2
0.56
0.022
E
7.37
8.38
0.290
0.330
e
1.27
0.050
e3
5.08
0.200
F
0.38
0.015
G
0.101
0.004
M
1.27
0.050
M1
1.14
0.045
P027A
11/12
HCC/HCF40109B
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1994 SGS-THOMSON Microelectronics - All Rights Reserved
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