IRF640S N - CHANNEL 200V - 0.150Ω - 18A TO-263 MESH OVERLAY MOSFET TYPE IRF640S ■ ■ ■ ■ V DSS R DS(on) ID 200 V < 0.18 Ω 18 A TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION This power MOSFET is designed using he company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources. APPLICATIONS ■ HIGH CURRENT SWITCHING ■ UNINTERRUPTIBLE POWER SUPPLY (UPS) ■ DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT. 3 1 D2PAK TO-263 (suffix ”T4”) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR Parameter Value Un it Drain-source Voltage (VGS = 0) 200 V Drain- gate Voltage (R GS = 20 kΩ) 200 V G ate-source Voltage ± 20 V ID Drain Current (continuous) at Tc = 25 o C 18 A ID Drain Current (continuous) at Tc = 100 o C 11 A Drain Current (pulsed) 72 A V GS I DM (•) P tot dv/dt( 1) Ts tg Tj o T otal Dissipation at Tc = 25 C 125 W Derating Factor 1.0 W /o C 5 V/ns Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature (•) Pulse width limited by safe operating area September 1999 -65 to 150 o C 150 o C ( 1) ISD ≤ 18A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX 1/8 IRF640S THERMAL DATA 3.12 R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature F or Soldering Purpose o 1.0 62.5 0.5 300 C/W oC/W o C/W o C AVALANCHE CHARACTERISTICS Symbo l Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Parameter 18 A E AS Single Pulse Avalanche Energy o (starting Tj = 25 C, ID = IAR , V DD = 50 V) 280 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 µA V GS = 0 Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (VDS = 0) Min. Typ. Max. 200 Unit V T c = 125 oC V GS = ± 20 V 1 10 µA µA ± 100 nA ON (∗) Symbo l Parameter Test Con ditions V GS(th) Gate Threshold Voltage V DS = V GS ID = 250 µA R DS(on) Static Drain-source On Resistance V GS = 10V ID = 9 A I D(o n) On State Drain Current V DS > ID(o n) x R DS(on )ma x V GS = 10 V Min. Typ. Max. Unit 2 3 4 V 0.15 0.18 Ω 18 A DYNAMIC Symbo l g f s (∗) C iss C os s C rss 2/8 Parameter Test Con ditions Forward Transconductance V DS > ID(o n) x R DS(on )ma x Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz ID = 9 A V GS = 0 Min. Typ. 3 4 1200 200 60 Max. Unit S 1560 260 80 pF pF pF IRF640S ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l Typ. Max. Unit t d(on) tr Turn-on Time Rise Time Parameter V DD = 100 V I D = 9 A R G = 4.7 Ω V GS = 10 V (see test circuit, figure 3) Test Con ditions 13 27 17 35 ns ns Qg Q gs Q gd Total G ate Charge Gate-Source Charge Gate-Drain Charge V DD = 160 V 55 10 21 72 nC nC nC Typ. Max. Unit 21 25 50 27 32 65 ns ns ns Typ. Max. Unit 18 72 A A 1.5 V ID = 18 A Min. V GS = 10V SWITCHING OFF Symbo l tr (Voff) tf tc Parameter Off-voltage Rise T ime Fall T ime Cross-over Time Test Con ditions Min. V DD = 160 V I D = 18 A R G = 4.7 Ω VGS = 10 V (see test circuit, figure 5) SOURCE DRAIN DIODE Symbo l Parameter Test Con ditions ISD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage I SD = 18 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 18 A di/dt = 100 A/µs o Tj = 150 C V DD = 50 V (see test circuit, figure 5) t rr Q rr I RRM Min. V GS = 0 240 ns 1.8 µC 15 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance 3/8 IRF640S Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 IRF640S Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 IRF640S Fig. 1: Unclamped Inductive Load Test Circuit Fig. 1: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 IRF640S TO-263 (D2PAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.21 1.36 0.047 0.053 D 8.95 9.35 0.352 0.368 E 10 10.4 0.393 0.409 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.624 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 D C2 A2 A C DETAIL”A” DETAIL ”A” A1 B2 E B G L2 L L3 P011P6/E 7/8 IRF640S Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibil ity for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specific ation mentioned in this publication are subjec t to change without notice. This publication supersedes and replaces all information previously supplied. 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