STP3020L N - CHANNEL 30V - 0.019Ω - 40A - TO-220 STripFET POWER MOSFET TYPE V DSS R DS(on) ID ST P3020L 30 V < 0.022 Ω 40 A ■ ■ ■ TYPICAL RDS(on) = 0.019 Ω LOW GATE CHARGE A 100oC APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ DC-AC & DC-AC CONVERTERS IN HIGH PERFORMANCE VRMs ■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V DS V DGR V GS Value Unit Drain-source Voltage (V GS = 0) Parameter 30 V Drain- gate Voltage (R GS = 20 kΩ) 30 V ± 20 V G ate-source Voltage o ID Drain Current (continuous) at Tc = 25 C 40 A ID Drain Current (continuous) at Tc = 100 C o 28 A 160 A 80 W 0.53 W /o C I DM (•) P tot Drain Current (pulsed) o T otal Dissipation at Tc = 25 C Derating Factor T s tg Tj Storage T emperature Max. O perating Junct ion T emperature -65 to 175 o C 175 o C (•) Pulse width limited by safe operating area March 1999 1/8 STP3020L THERMAL DATA R thj -case Rthj -amb R thc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature F or Soldering Purpose o 1.875 62.5 0.5 300 C/W oC/W o C/W o C ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 µA V GS = 0 I DSS V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating IGSS Gate-body Leakage Current (VDS = 0) Min. Typ. Max. 30 Unit V 1 10 µA µA ± 100 nA Typ. Max. Unit 2.5 V 0.019 0.033 0.022 0.038 Ω Ω T c = 125 oC V GS = ± 20 V ON (∗) Symbo l Parameter Test Con ditions V GS(th) Gate Threshold Voltage V DS = V GS ID = 250 µA R DS(on) Static Drain-source On Resistance V GS = 10V V GS = 5V ID = 20 A ID = 20 A I D(o n) On State Drain Current V DS > ID(o n) x R DS(on )ma x V GS = 10 V Min. 1 40 A DYNAMIC Symbo l g f s (∗) C iss C os s C rss 2/8 Parameter Test Con ditions Forward Transconductance V DS > ID(o n) x R DS(on )ma x Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz I D =20 A V GS = 0 Min. Typ. Max. Unit 5 20 S 1270 350 115 pF pF pF STP3020L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l Parameter Test Con ditions Min. Typ. Max. Unit t d(on) tr Turn-on Delay T ime Rise Time V DD = 15 V I D = 19 A R G = 4.7 Ω V GS = 4.5 V (Resistive Load, see fig. 3) 28 220 Qg Q gs Q gd Total G ate Charge Gate-Source Charge Gate-Drain Charge V DD = 24 V ID = 38 A V GS = 5 V 21 9 11 29 nC nC nC Typ. Max. Unit ns ns SWITCHING OFF Symbo l Parameter Test Con ditions Min. t d(of f) tf Turn-off Delay T ime Fall T ime V DD = 15 V I D = 19 A V GS = 4.5 V R G = 4.7 Ω (Resistive Load, see fig. 3) 45 35 ns ns tr (Voff) tf tc Off-voltage Rise T ime Fall T ime Cross-over Time V DD = 24 V I D = 38 A V GS = 4.5 V R G = 4.7 Ω (Induct ive Load, see fig. 5) 30 85 125 ns ns ns SOURCE DRAIN DIODE Symbo l Parameter Test Con ditions ISD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage I SD = 40 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 38 A di/dt = 100 A/µs T j = 150 o C V DD = 15 V (see test circuit, fig. 5) t rr Q rr I RRM Min. Typ. V GS = 0 Max. Unit 40 160 A A 1.5 V 45 ns 60 nC 2.5 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance 3/8 STP3020L Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STP3020L Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STP3020L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STP3020L TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 14.0 0.511 L2 16.4 L4 0.645 13.0 0.551 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L5 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 7/8 STP3020L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibil ity for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specific ation mentioned in this publication are subjec t to change without notice. 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