LCP1511D Application Specific Discretes A.S.D. PROGRAMMABLE TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION FEATURES DUAL PROGRAMMABLE TRANSIENT SUPPRESSOR. WIDE NEGATIVE FIRING VOLTAGE RANGE : VMGL = -80V max. LOW DYNAMIC SWITCHING VOLTAGES : VFP and V DGL. LOW GATE TRIGGERING CURRENT : IGT = 5mA max. PEAK PULSE CURRENT : IPP = 30A for 10/1000µs surge. HOLDING CURRENT : IH = 150mA. SO8 DESCRIPTION This device has been especially designed to protect subscriber line card interfaces (SLIC) against transient overvoltages. Positive overloads are clipped with 2 diodes. Negative surges are suppressed by 2 thyristors, their breakdown voltage being referenced to -VBAT through the gate. This component presents a very low gate triggering current (IGT) in order to reduce the current consumption on printed circuit board during the firing phase. A particular attention has beengiven to the internal wire bonding. The ”4-point” configuration ensures reliable protection, eliminating the overvoltage introduced by the parasitic inductances of the wiring (Ldi/dt), especially for very fast transients. COMPLIESWITHTHE FOLLOWINGSTANDARDS : CCITT K20 : 10/700µs 5/310µs 10/700µs 5/310µs 1.2/50µs 1/20µs 0.5/700µs 0.2/310µs 2/10µs 2/10µs VDE 0433 : VDE 0878 : I3124 : FCC part 68 : BELLCORE TR-NWT-001089 : 2/10µs 2/10µs (*) with series resistors or PTC. February 1998 Ed: 3 SCHEMATIC DIAGRAM TIP 1 8 TIP GATE 2 7 GND NC 3 6 GND RING 4 5 RING 1kV 25A 2kV 38A (*) 1.5kV 40A 1kV 25A 2.5kV 170A (*) 2.5kV 170A (*) TM: ASD is trademarks of SGS-THOMSON Microelectronics. 1/7 LCP1511D ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C) Symbol Parameter Value Unit IPP Peak pulse current (see note 1) 10/1000µs 5/310µs 2/10µs 30 38 170 A ITSM Non repetitive surge peak on-state current (F = 50Hz) tp = 10ms t = 1s 8 3.5 A IGSM Maximum gate current (half sine wave tp = 10ms) 2 A VMLG VMGL Maximum voltage LINE / GROUND Maximum voltage GATE / LINE -100 -80 V - 55 to + 150 150 °C 260 °C Tstg Tj Storage temperature range Maximum junction temperature TL Maximum lead temperature for soldering during 10s Note 1 : Pulse waveform : 10/1000µs tr=10µs 5/310µs tr=5µs 2/10µs tr=2µs tp=1000µs tp=310µs tp=10µs % I PP 100 50 0 tr t tp THERMAL RESISTANCE Symbol Rth (j-a) Parameter Value Unit 170 °C/W Junction to ambient ELECTRICAL CHARACTERISTICS (Tamb = 25°C) Symbol Parameter IGT Gate triggering current IH Holding current IRM Reverse leakage current LINE/GND IRG Reverse leakage current GATE/LINE VRM Reverse voltage LINE/GND VF Forward drop voltage LINE/GND VGT Gate triggering voltage VFP Peak forward voltage LINE/GND VDGL Dynamic switching voltage GATE/LINE VGATE GATE/GND voltage VLG LINE/GND voltage C 2/7 Off-state capacitance LINE/GND IF I VLG VGATEVRM VF IRM IH IPP LCP1511D 1 - PARAMETERS RELATED TO THE DIODE LINE/GND (Tamb = 25 °C) Symbol Test conditions VF IF=5A tp=500µs VFP 10/700µs 1.2/50µs 2/10µs 1.5kV 1.5kV 2.5kV Rp=10Ω Rp=10Ω Rp=62Ω Maximum Unit 3 V 5 7 12 V (see note 1) Note 1 : See test circuit 2 for VFP; Rp is the protection resistor located on the line card. 2 - PARAMETERS RELATED TO THE PROTECTION THYRISTOR (Tamb = 25°C) Symbol Test conditions Min. Max. Unit 5 mA IGT VGND/LINE = -48V 0.2 IH VGATE =-48V (see note 2) 150 VGT at IGT IRG Tc=25°C Tc=70°C Note 2 : Note 3 : VRG =-75V VRG =-75V VGATE= -48V (see note 3) 10/700µs 1.5kV Rp=10Ω 1.2/50µs 1.5kV Rp=10Ω 2/10µs 2.5kV Rp=62Ω VDGL mA IPP=30A IPP=30A IPP=38A 2.5 V 5 50 µA 10 20 25 V See the functional holding current (I H) test circuit 2. See test circuit 1 for VDGL. The oscillations with a time duration lower than 50ns are not taken into account. 3 - PARAMETERS RELATED TO DIODE AND PROTECTION THYRISTOR (Tamb = 25 °C) Symbol Test conditions IRM Tc=25°C Tc=70°C VGATE/LINE = -1V VGATE/LINE = -1V C VR =-3V VR =-48V F=1MHz F=1MHz VRM =-75V VRM =-75V Maximum Unit 5 50 µA 100 50 pF APPLICATION NOTE TIP 1 IN OUT 8 TIP 7 GATE 2 GND 6 NC 3 RING 4 In order to take advantageof the ”4 point” structure of the LCP, the TIP and RING lines go across the device. In such case, the device will eliminate the overvoltages generated by the parasitic inductances of the wiring (Ldi/dt), especially for very fast transients. IN OUT 5 RING 3/7 LCP1511D FUNCTIONAL HOLDING CURRENT (IH) TEST CIRCUIT 1 : GO-NO GO TEST R P D.U.T. VBAT = - 48V Surge generator This is a GO-NO GO test which allows to confirm the holding current (IH) level in a functional test circuit. TEST PROCEDURE : - Adjust the current level at the IH value by short circuiting the D.U.T. - Fire the D.U.T. with a surge current : IPP = 10A, 10/1000µs. - The D.U.T. will come back to the off-state within a duration of 50ms max. TEST CIRCUIT 2 FOR VFP AND VDGL PARAMETERS R4 (V is defined in unload condition) P TIP L R2 RING R3 VP R1 C1 C2 G ND Pulse (µs) Vp C1 C2 L R1 R2 R3 R4 IPP Rp tr tp (V) (µF) (nF) (µH) (Ω) (Ω) (Ω) (Ω) (A) (Ω) 10 700 1500 20 200 0 50 15 25 25 30 10 1.2 50 1500 1 33 0 76 13 25 25 30 10 2 10 2500 10 0 1.1 1.3 0 3 3 38 62 4/7 LCP1511D FUNCTIONAL DESCRIPTION LINE A PROTECTION : TIP LINE A – For positive surges versus GND, the diode D1 will conduct. – For negative surges versus GND, the protection device P1 will trigger at a voltage fixed by the -VBAT reference. D1 P1 - VBAT C P2 D2 LINE B RING LINE B PROTECTION : – For surges on line B, the operating mode is the same, D2 or P2 is activated. It is recommended to add a capacitor (C=220nF) close to the gate of the LCP, in order to speed up the triggering. Surge peak current versus overload duration. ITSM(A) 10 F=50H z Tj initial=25°C 9 8 7 6 5 4 3 2 1 0 1E-2 t(s) 1E-1 1E+0 1E+1 1E+2 1E+3 5/7 LCP1511D APPLICATION CIRCUIT : typical SLIC protection concept RING GENERATOR - VBAT PTC LINE A T E S T RING RELAY R E L A Y S SLIC 220 nF THBTxxxD LINE B LCP1511D PTC ORDER CODE LCP 15 1 1 D RL : tape and reel : tube LINE CARD PROTECTION IH =150 mA VERSION MARKING 6/7 RL Package Type Marking SO8 LCP1511D CP151D DYNAMIC PACKAGE 1 : SO8 LCP1511D PACKAGE MECHANICAL DATA SO8 Plastic DIMENSIONS REF. Millimetres Min. Inches Typ. Max. Min. A Typ. Max. 1.75 0.069 a1 a2 0.1 0.25 0.004 1.65 0.010 0.065 b b1 0.35 0.19 0.48 0.014 0.25 0.007 0.019 0.010 C c1 D E 0.50 0.020 4.8 45°(typ) 5.0 0.189 0.197 5.8 6.2 0.244 e e3 0.228 1.27 3.81 0.050 0.150 F 3.8 4.0 0.15 0.157 L M 0.4 1.27 0.016 0.6 0.050 0.024 S 8° (max) Weight = 0.08 g. Packaging: Product supplied in antistatictubes or tape and reel . Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 1998 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy- Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 7/7