STTH20003TV HIGH FREQUENCY SECONDARY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS IF(AV) 2 x 100 A A1 K1 VRRM 300 V A2 K2 Tj (max) 150 °C VF (max) 0.95 V trr (max) 90 ns K1 A1 K2 FEATURES AND BENEFITS COMBINES HIGHEST RECOVERY AND REVERSE VOLTAGE PERFORMANCE ULTRAFAST, SOFT AND NOISE-FREE RECOVERY ISOLATED PACKAGE: 2500 V RMS (UL APPROVALPENDING DEVICE) LOW INDUCTANCE AND LOW CAPACITANCE ALLOW SIMPLER LAYOUT A2 ISOTOP DESCRIPTION Dual rectifiers suited for Switch Mode Power Supply and high frequency DC to DC converters. Packaged in ISOTOPTM, this device is intendedfor use in low voltage, high frequency inverters, free wheeling operation, welding equipment and telecom power supplies. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) Parameter Repetitive peak reverse voltage RMS forward current IF(AV) Average forward current Tc = 85°C δ = 0.5 IFSM Surge non repetitive forward current tp = 10 ms sinusoidal IRSM Non Repetitive peak reverse current tp = 100 µs square Tstg Storage temperature range Tj Maximum operating junction temperature Per diode Perdevice Value 300 Unit V 180 A 100 200 A 1000 A 13 A - 55 to + 150 °C 150 °C ISOTOP is a registered trademark of STMicroelectronics October 1999 - Ed: 2C 1/5 STTH20003TV THERMAL RESISTANCES Symbol Rth (j-c) Parameter Junction to case Rth (c) Per diode Total Value 0.55 0.35 Coupling 0.1 Unit °C/W When the diodes 1 and 2 are used simultaneously: ∆Tj (diode 1) = P (diode 1) x Rth(j-c) (per diode) + P (diode 2) x Rth(C) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF ** Parameter Tests Conditions Reverse leakage current VR = 300 V Forward voltage drop IF = 100 A Min. Typ. Tj = 25°C 0.2 Tj = 125°C Tj = 25°C Tj = 125°C Max. Unit 200 µA 2 mA 1.20 V 0.8 0.95 Typ. Max. Pulse test : * tp = 5 ms, δ < 2 % ** tp = 380 µs, δ < 2% To evaluate the maximum conduction losses use the following equation: P = 0.75 x IF(AV) + 0.0020 x IF2(RMS) RECOVERY CHARACTERISTICS Symbol trr Tests Conditions IF = 0.5 A IF = 1 A tfr VFP Sfactor IRM 2/5 Irr = 0.25 A IR = 1A dIF/dt = - 50 A/µs VR = 30 V IF = 100 A dIF/dt = 200 A/µs Min. Tj = 25°C 55 dIF/dt = 200 A/µs IF = 100 A ns 90 Tj = 25°C VFR = 1.1 x VF max. Vcc = 200 V Unit Tj = 125°C 1400 ns 5 V 0.3 18 A STTH20003TV Fig. 1: Conduction losses versus average current (per diode). Fig. 2: Forward voltage drop versus forward current (Maximum values, per diode). P1(W) 120 δ = 0.2 Tj=125°C (Typical values) δ = 0.1 100 IFM(A) 500 δ = 0.5 δ=1 100 δ = 0.05 Tj=25°C 80 60 Tj=125°C 10 40 T 20 δ=tp/T IF(av) (A) 0 0 20 40 60 80 tp 100 1 0.0 120 Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration. 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence,per diode). IRM(A) Zth(j-c)/Rth(j-c) 40 1.0 VR=200V Tj=125°C 35 0.8 0.6 VFM(V) IF=2xIF(av) 30 IF=IF(av) 25 δ = 0.5 IF=0.5xIF(av) 20 0.4 15 δ = 0.2 T δ = 0.1 10 0.2 Single pulse 0.0 1E-3 tp(s) 1E-2 1E-1 δ=tp/T tp 1E+0 5E+0 Fig. 5: Reverse recovery time versus dIF/dt (90% confidence, per diode). 260 240 220 200 180 160 140 120 100 80 60 40 20 0 5 0 dIF/dt(A/µs) 0 100 150 200 250 300 350 400 450 500 Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical values, per diode). trr(ns) 0.6 VR=200V Tj=125°C 50 S factor VR=200V Tj=125°C 0.5 IF=2xIF(av) 0.4 IF=IF(av) 0.3 IF=0.5xIF(av) 0.2 0.1 dIF/dt(A/µs) 0 50 100 150 200 250 300 350 400 450 500 0.0 dIF/dt(A/µs) 0 50 100 150 200 250 300 350 400 450 500 3/5 STTH20003TV Fig. 7: Relative variation of dynamic parameters versus junction temperature (Reference: Tj=125°C). 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 25 VFP(V) 8 4/5 IF=IF(av) Tj=125°C 7 S factor 6 5 4 3 IRM 2 1 Tj(°C) 50 75 100 125 Fig.9: Forward recovery time versus dIF/dt (90% confidence, per diode). 1000 900 800 700 600 500 400 300 200 100 0 Fig. 8: Transient peak forward voltage versus dIF/dt (90% confidence,per diode). tfr(ns) VFR=1.1 xVF max. IF=IF(av) Tj=125°C dIF/dt(A/µs) 0 50 100 150 200 250 300 350 400 450 500 0 dIF/dt(A/µs) 0 50 100 150 200 250 300 350 400 450 500 STTH20003TV PACKAGE MECHANICAL DATA ISOTOP DIMENSIONS REF. Millimeters A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P P1 S 11.80 12.20 8.90 9.10 7.8 8.20 0.75 0.85 1.95 2.05 37.80 38.20 31.50 31.70 25.15 25.50 23.85 24.15 24.80 typ. 14.90 15.10 12.60 12.80 3.50 4.30 4.10 4.30 4.60 5.00 4.00 4.30 4.00 4.40 30.10 30.30 Min. Max. Inches Min. Max. 0.465 0.480 0.350 0.358 0.307 0.323 0.030 0.033 0.077 0.081 1.488 1.504 1.240 1.248 0.990 1.004 0.939 0.951 0.976 typ. 0.587 0.594 0.496 0.504 0.138 0.169 0.161 0.169 0.181 0.197 0.157 0.69 0.157 0.173 1.185 1.193 Cooling method: by conduction (C) Recommended torque value : 1.3 N.m. Maximum torque value: 1.5 N.m. Ordering code Marking STTH20003TV STTH20003TV Package ISOTOP Weight 27g. without screws Base qty 10 with screws Delivery mode Tube Epoxy meets UL 94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1999 STMicroelectronics - Printed in Italy - All rights reserved. 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