STTH6102TV ® HIGH EFFICIENCY ULTRAFAST DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) 2 x 30 A VRRM 200 V Tj (max) 150 °C VF (typ) 0.70 V trr (typ) 25 ns A1 K1 A2 K2 K1 A1 FEATURES AND BENEFITS ■ ■ ■ ■ ■ ■ Suited for welding and high power equipment Very low forward losses Low recovery times High surge current capability Insulated: Insulating voltage = 2500 VRMS Capacitance < 45 pF Low leakage current K2 A2 ISOTOP STTH6102TV1 DESCRIPTION Dual center tap rectifier suited for welding equipment and high power industrial application. Packaged in ISOTOP, this device is intended for use in the secondary rectification of power converters. ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) RMS forward current Value Unit 200 V Per diode 80 A Per diode 30 A 400 A - 55 + 150 °C 150 °C IF(AV) Average forward current δ =0.5 Tc = 115°C IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal per diode Tstg Storage temperature range Tj Maximum operating junction temperature February 2004 - Ed: 1 1/5 STTH6102TV THERMAL PARAMETERS Symbol Parameter Rth (j-c) Junction to case Rth (j-c) Maximum Unit Per diode 1.2 °C/W Per device 0.65 0.1 Coupling °C/W When the diodes 1 and 2 are used simultaneously: ∆ Tj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter IR* Tests conditions Reverse leakage current VF** Tj = 25°C Min. VR = VRRM 25 Tj = 125°C Forward voltage drop Typ. Max. Unit 50 µA 250 Tj = 25°C IF = 30 A 1.05 Tj = 25°C IF = 60 A 1.15 Tj = 150°C IF = 30 A Tj = 150°C IF = 60 A 0.70 V 0.81 0.96 Pulse test: * tp = 5ms, δ < 2% ** tp = 380µs, δ < 2% To evaluate the maximum conduction losses use the following equation : P = 0.66 x IF(AV) + 0.005 IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS Symbol trr IRM tfr VFP 2/5 Parameter Tests conditions Min. Typ. Max. Unit Reverse recovery time Tj = 25°C IF = 1 A VR = 30V dIF/dt = 200 A/µs 25 30 ns Reverse recovery current Tj = 125°C IF = 30 A VR = 160V dIF/dt = 200 A/µs 6.8 8.8 A Forward recovery time Tj = 25°C IF = 30 A dIF/dt = 200 A/µs VFR = 1.1 x VFmax 220 ns Forward recovery voltage Tj = 25°C IF = 30 A dIF/dt = 200 A/µs 2.5 V STTH6102TV Fig. 1: Peak current versus duty cycle (per diode). Fig. 2-1: Forward voltage drop versus forward current (typical values, per diode). IM(A) IFM(A) 400 100 375 IM 350 325 90 T 80 300 δ=tp/T 275 70 tp 250 Tj=150°C 60 P = 30W 225 50 200 175 40 150 30 P = 60W 125 100 Tj=25°C 20 75 50 P = 20W 10 δ 25 0 0.0 0.1 0.2 0.3 0.4 VFM(V) 0 0.0 0.5 0.6 0.7 0.8 0.9 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.0 Fig. 2-2: Forward voltage drop versus forward current (maximum values, per diode). Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) IFM(A) 1.0 100 90 80 70 Tj=150°C 60 50 Single pulse 40 30 Tj=25°C 20 10 VFM(V) tp(s) 0 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 Fig. 4: Junction capacitance versus reverse voltage applied (typical values, per diode). 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 Fig. 5: Reverse recovery charges versus dIF/dt (typical values, per diode). Qrr(nC) C(pF) 300 1000 IF=30A VR=160V F=1MHz VOSC=30mVRMS Tj=25°C 250 200 Tj=125°C 150 100 100 Tj=25°C 50 VR(V) dIF/dt(A/µs) 10 0 0 50 100 150 200 10 100 1000 3/5 STTH6102TV Fig. 6: Reverse recovery time versus dIF/dt (typical values, per diode). Fig. 7: Peak reverse recovery current versus dIF/dt (typical values, per diode). trr(ns) IRM(A) 80 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 IF=30A VR=160V 70 Tj=125°C 60 50 40 30 Tj=25°C 20 10 dIF/dt(A/µs) 0 10 100 1000 Fig. 8: Dynamic parameters versus junction temperature. Qrr;IRM[Tj]/Qrr;IRM[Tj=125°C] 1.4 IF=30A VR=160V 1.2 1.0 IRM 0.8 Qrr 0.6 0.4 0.2 Tj(°C) 0.0 25 4/5 50 75 100 125 IF=30A VR=160V Tj=125°C Tj=25°C dIF/dt(A/µs) 10 100 1000 STTH6102TV PACKAGE MECHANICAL DATA ISOTOP DIMENSIONS REF. D Min. Max. Min. Max. A 11.80 12.20 0.465 0.480 A1 8.90 9.10 0.350 0.358 B 7.8 8.20 0.307 0.323 C 0.75 0.85 0.030 0.033 C2 1.95 2.05 0.077 B 0.081 D 37.80 38.20 1.488 1.504 D1 31.50 31.70 1.240 1.248 E 25.15 25.50 0.990 1.004 E1 23.85 24.15 0.939 0.951 A1 O/P E1 F G1 E2 G2 E F1 E2 G Inches A D1 P1 Millimeters C2 S Ordering code Marking Package STTH6102TV1 STTH6102TV1 ISOTOP 24.80 typ. 0.976 typ. G 14.90 15.10 0.587 0.594 G1 12.60 12.80 0.496 0.504 G2 3.50 4.30 0.138 0.169 F 4.10 4.30 0.161 0.169 F1 4.60 5.00 0.181 0.197 P 4.00 4.30 0.157 0.69 C Weight Base qty Delivery mode 27 g 10 (without screws) (with screws) Tube Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2004 STMicroelectronics - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain Sweden - Switzerland - United Kingdom - United States www.st.com 5/5