TDA1905 5W AUDIO AMPLIFIER WITH MUTING DESCRIPTION The TDA1905 is a monolithic integrated circuit in POWERDIP package, intended for use as low frequency power amplifier in a wide range of applications in radio and TV sets: – muting facility – protection against chip over temperature – very low noise – high supply voltage rejection – low ”switch-on” noise – voltage range 4V to 30V The TDA 1905 is assembled in a new plastic package, the POWERDIP, that offers the same assembly ease, space and cost saving of a normal dual in-line package but with a power dissipationof up to6W and a thermal resistance of 15°C/W (junction to pins). Powerdip (8 + 8) ORDERING NUMBER : TDA 1905 ABSOLUTE MAXIMUM RATINGS Symbol Value Unit Vs Supply voltage Parameter 30 V Io Output peak current (non repetitive) 3 A Io Output peak current (repetitive) Vi Input voltage 2.5 A 0 to + Vs V Vi Differential input voltage ±7 V V11 Muting thresold voltage Vs V Ptot Power dissipation at Tamb = 80°C 1 W Tcase = 60°C 6 W -40 to 150 °C Tstg, Tj Storage and junction temperature APPLICATION CIRCUIT March 1993 1/14 TDA1905 PIN CONNECTION (top view) SCHEMATIC DIAGRAM THERMAL DATA Symbol Parameter Value Unit Rth-j-case Thermal resistance junction-pins max 15 °C/W Rth-j-amb Thermal resistance junction-ambient max 70 °C/W 2/14 TDA1905 TEST CIRCUITS: WITHOUT MUTING WITH MUTING FUNCTION 3/14 TDA1905 ELECTRICAL CHARACTERISTICS (Refer to the test circuit, Tamb = 25 °C, Rth (heatsink) = 20 °C/W, unless otherwisw specified) Symbol Parameter Vs Supply voltage Vo Quiescent output voltage Id VCE sat Po d Vi Vi Quiescent drain current Output stage saturation voltage Output power Harmonic distortion Input sensitivity Test conditions Typ. Max. Unit 30 V 2.1 7.2 15.5 2.5 7.8 16.8 V Vs = 4V Vs = 14V Vs = 30V 15 17 21 35 IC = 1A 0.5 IC = 2A 1 4 1.6 6.7 14.4 Vs = 4V Vs = 14V Vs = 30V d = 10% Vs = 9V Vs = 14V Vs = 18V Vs = 24V f = 1KHz RL = 4Ω (*) RL = 4Ω RL = 8Ω RL = 16Ω 2.2 5 5 4.5 f = 1KHz Vs = 9V RL = 4Ω Po = 50 mW to 1.5W Vs = 14V RL = 4Ω Po = 50 mW to 3W Vs = 18V RL = 8Ω Po = 50 mW to 3W Vs = 24V RL = 16Ω Po = 50 mW to 3W f = 1KHz Vs = 9V Vs = 14V Vs = 18V Vs = 24V RL = RL = RL = RL = 4Ω 4Ω 8Ω 16Ω Po Po Po Po 2.5 5.5 5.5 5.3 0.1 % 0.1 0.1 = 2.5W = 5.5W = 5.5W = 5.3W 37 49 73 100 = 9V = 14V = 18V = 24V 0.8 1.3 1.8 2.4 Ri Input resistance (pin 8) f = 1KHz 60 Id Drain current f = 1KHz Vs = 9V Vs = 14V Vs = 18V Vs = 24V RL = RL = RL = RL = 4Ω 4Ω 8Ω 16Ω Po Po Po Po = 2.5W = 5.5W = 5.5W = 5.3W 380 550 410 295 f = 1KHz Vs = 9V Vs = 14V Vs = 18V Vs = 24V RL = RL = RL = RL = 4Ω 4Ω 8Ω 16Ω Po Po Po Po = 2.5W = 5.5W = 5.5W = 5.3W 73 71 74 75 (*) With an external resistor of 100Ω between pin 3 and +Vs. W 0.1 Vs Vs Vs Vs Efficiency mA V Input saturation voltage (rms) η 4/14 Min. mV V 100 KΩ mA % TDA1905 ELECTRICAL CHARACTERISTICS (continued) Symbol Parameter Test conditions BW Small signal bandwidth (-3dB) Vs = 14V Gv Voltage gain (open loop) Vs = 14V f = 1KHz Gv Voltage gain (closed loop) Vs = 14V f = 1KHz eN Total input noise RL = 4Ω Po = 1W Rg = 50Ω Rg = 1KΩ Rg = 10KΩ SVR Tsd Vs = 14V Rg = Po = 5.5W Rg = R L = 4Ω Rg = Rg = Signal to noise ratio Supply voltage rejection Thermal shut-down case temperatura 39.5 RL = 4Ω Po = 1W Rg = 50Ω Rg = 1KΩ Rg = 10KΩ S/N Min. (°) (°°) Max. Unit 40 to 40,000 Hz 75 dB 40 40.5 1.2 1.3 1.5 4.0 2.0 2.0 2.2 6.0 dB µV µV 10KΩ 0 (°) 90 92 10KΩ 0 (°°) 87 87 dB 50 dB 115 °C RL = 8Ω Vs = 18V fripple = 100 Hz Rg = 10KΩ Vripple = 0.5Vrms 40 Ptot = 2.5W (*) Typ. dB MUTING FUNCTION VTOFF Muting-off threshold voltage (pin 4) 1.9 4.7 V VTON Muting-on threshold voltage (pin 4) 0 1.3 V 6.2 Vs R5 Input-resistance (pin 5) Muting off 80 Muting on R4 Input resistance (pin 4) AT Muting attenuation 200 10 150 R g + R1 = 10KΩ 50 KΩ 30 Ω KΩ 60 dB Note: (°) Weighting filter = curve A. (° °) Filter with noise bandwidth: 22 Hz to 22 KHz. (*) See fig. 30 and fig. 31 5/14 TDA1905 Figure 1. Quiescent output voltage vs. supply voltage Figure 2. Quiescent drain current vs. supply voltage Figure 3. Output power vs. supply voltage Fi g ure 4. Distortion v s. output power (RL = 16Ω) Fig ur e 5 . Di stor tion v s. output power (RL = 8Ω) Fi gur e 6 . Disto rtion vs . output power (RL = 4Ω) Fi g ure 7. Distortion v s. frequency (RL = 16Ω) Fig ur e 8 . Di stor tion v s. frequency (RL = 8Ω) Fi gur e 9 . Disto rtion vs . frequency (RL = 4Ω) 6/14 TDA1905 Figure 10. Open loop frequency response Figure 11. Output power vs. input voltage Figure 12. Value of capacitor Cx vs. bandwidth (BW) and gain (Gv) Figure 13. Supply voltage rejection vs. voltage gain (ref. to the Muting circuit) Figure 14. Supply voltage reection vs. source resistance Figure 15. Max power dissipation vs. supply voltage (sine wave operation) Figure 16. Power dissipation and efficiency vs. output power Figure 17. Power dissipation and efficiency vs. output power Figure 18. Power dissipation and efficiency vs. output power 7/14 TDA1905 APPLICATION INFORMATION Figure 19. Application circuit without muting Figure 20. PC board and components lay-out of the circuit of fig. 19 (1 : 1 scale) Figure 21. Application circuit with muting Figure 22. Delayed muting circuit 8/14 TDA1905 APPLICATION INFORMATION (continued) Figure 23. Low-cost application circuit without bootstrap. Figure 24. Output power vs. supply voltage (circuit of fig. 23) Figure 25. Two position DC tone control using change of pin 5 resistance (muting function) Figure 26. Frequency responseofthe circuitof fig. 25 Figure 27. Bass Bomb tone control using change of pin 5 resistance (muting function) Figure 28. Frequency responseofthecircuitof fig. 27 9/14 TDA1905 MUTING FUNCTION The output signal can be inhibited applying a DC voltage VT to pin 4, as shown in fig. 29 Figure 29 The input resistance at pin 5 depends on the threshold voltage VT at pin 4 and is typically : 1.9V ≤ VT ≤ 4.7V 0V ≤ VT ≤ 1.3V @ 6V ≤ VT ≤ Vs R5 = 200 KΩ @ R5 = 10 Ω muting-off muting-on Referring to the following input stage, the possible attenuationof the input signal and therefore of the output signal can be found using the following expression: Vi = AT = V8 R8 • R5 ) R8 + 5 R8 • R5 ( ) R8 + R5 Rg + ( where R8 ≅ 100 KΩ Considering Rg = 10 KΩ the attenuation in the muting-on condition is typically A T = 60 dB. In the muting-off condition, the attenuation is very low, typically 1.2 dB. A very low current is necessary to drive the threshold voltage VT because the input resistance at pin 4 is greater than 150 KΩ. The muting function can be usedin many cases, when a temporaryinhibition of the output signal is requested, for example: – in switch-on condition, to avoid preamplifier power-on transients (see fig. 22) 10/14 – during switching at the input stages. – during the receiver tuning. The variable impedance capability at pin 5 can be useful in many applications and two examples are shown in fig. 25 and 27, where it has been used to change the feedback network, obtaining 2 different frequency responses. TDA1905 APPLICATION SUGGESTION The recommended values of the external components are those shown on the application circuit of fig. 21. When the supply voltage Vs is less than 10V, a 100Ω resistor must be connected between pin 2 and pin 3 in order to obtain the maximum output power. Different values can be used. The following table can help the designer. Component Raccom. value Rg + R1 10KΩ R2 10KΩ Purpose Input signal imped. for muting operation Larger than recommended value Smaller than recommended value Increase of the attenuation in muting-on condition. Decrease of the input sensitivity. Decrease of the attenuation in muting on condition. Increase of gain. Decrease of gain. Increase quiescent current. Decrease of gain. Increase of gain. Feedback resistors R3 100Ω R4 1KΩ Frequency stability R5 100Ω Increase of the output swing with low supply voltage. P1 20KΩ Volume potentiometer Increase of the switch-on noise. Decrease of the input impedance and of the input level. Higher low frequency cutoff. Higher noise. 2.2µF Inverting input DC decoupling. Increase of the switchon noise. Higher low frequency cutoff. C5 0.1µF Supply voltage bypass. C6 10µF Ripple rejection C7 47µF C8 0.22µF C9 1000µF C4 Max. 9 R3 1KΩ 47 Higher cost lower noise. 0.22µF Min. Danger of oscillation at high frequencies with inductive loads. Input DC decoupling. C1 C2 C3 Allowed range 330 10KΩ 100KΩ 0.1µF Danger of oscillations. Degradation of SVR 2.2µF 100µF Bootstrap. Increase of the distortion at low frequency. 10µF 100µF Frequency stability. Danger of oscillation. Output DC decoupling. Increase of SVR increase of the switch-on time Higher low frequency cutoff. 11/14 TDA1905 THERMAL SHUT-DOWN The presence of a thermal limiting circuit offers the following advantages: 1) An overload on the output (even if it is permanent), or an above limit ambient temperature can be easily tolerated since the Tj cannot be higher than 150 °C. 2) The heatsink can have a smaller factor of safety compared with that of a conventional circuit. There is no possibility of device damage due to high junction temperature. If for any reason, the junction temperatureincreases up to 150 °C, the thermal shut-down simply reduces the power dissipation and the current consumption. The maximum allowable power dissipation depends upon the size of the external heatsink (i.e. its thermal resistance); fig. 32 shows this dissipable power as a function of ambient temperature for different thermal resistance. Figure 30. Output power and drain current vs. case temperature Figure 31. Output power and drain current vs. case temperature MOUNTING INSTRUCTION : See TDA1904 12/14 Figure 32. Maximum allowable power dissipation vs. ambient temperature TDA1905 POWERDIP PACKAGE MECHANICAL DATA mm DIM. MIN. a1 0.51 B 0.85 b b1 TYP. inch MAX. MIN. TYP. MAX. 0.020 1.40 0.033 0.50 0.38 0.020 0.50 D 0.055 0.015 0.020 20.0 0.787 E 8.80 0.346 e 2.54 0.100 e3 17.78 0.700 F 7.10 0.280 I 5.10 0.201 L Z 3.30 0.130 1.27 0.050 13/14 TDA1905 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore Spain - Sweden - Switzerland - Taiwan - Thaliand - United Kingdom - U.S.A. 14/14