PROCESS CP767 Small Signal Transistor PNP- Saturated Switch Transistor Chip PRELIMINARY PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 30 x 30 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.85 x 4.20 MILS Emitter Bonding Pad Area 7.35 x 3.75 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 15,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 12,300 PRINCIPAL DEVICE TYPES 2N3467 2N3468 BACKSIDE COLLECTOR 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (24-June 2003)