PANJIT PJQA6V2

PJQA6V2
Transient Voltage Suppressors for ESD Protection
This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvolatge
protection capability. It is intended for use in voltage and ESD sensitive equipment such as computers,
printers, business machines, communication systems, medical equipment, and other applications. Its quad
junction common anode design protects four separate lines using only one package. These devices are ideal
for situations where board space is at a premiun.
VOLTAGE
4.3 Volts
150 Watts
POEWR
FEATURES
• In compliance with EU RoHS 2002/95/EC directives
MECHANCALDATA
Case: SOT23-6L Molded plastic
Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
THERMAL CHARACTERISTICS (TA=25OC unless otherwise noted)
Characteristic
Symbol
Value
Unit
Peak Power Dissipation @ 1.0ms @ T A<25oC
PPK
24
W
Peak Power Dissipation @ 20 µs @ T A<25oC
PPK
150
W
Total Power Dissipation on FR-4 Board@ T A<25oC
PD
225
1.8
mW
mW/oC
RΘJA
556
PD
300
2.4
RΘJA
417
TJ,TSTG
-55 to + 150
o
C
TL
260
o
C
Thermal Resistance from Junction - to -Ambient
Total Power Dissipation on Alumina Substrate @ T
above 25oC
A<25oC
Derate
Thermal Resistance from Junction - to -Ambient
Junction and Storage Temperature Range
Lead Solder Temperature - Maximum (10 Second Duration)
o
C/W
mW
mW/oC
o
C/W
ELECTRICAL CHARACTERISTICS (TA=25 OC unless otherwise noted)
M a x R e ve r s e
Leakage
C ur r e nt
Breakdown Voltage
D evi ce
VZT(V)
PJQA6V2
REV.0.1-FEB.16.2009
@ IZT
IR
VR
Mi n
Nom
Max
mA
nA
V
5.89
6.2
6.51
1.0
700
4.3
Max Zener
Impedance
Max Reverse
Surge C urrent
Max Reverse
Voltage @
IRS M
Z ZT @IZT
IRS M
V RS M
A
V
m V / oC
10
9.5
10.6
Ω
mA
300
Maxi mum
Temperature
C oeffi ci ent of V
Z
PAGE . 1
PJQA6V2
10,000
300
BIASED AT 0 V
BIASED AT 1 V
BIASED AT 50%
OF VZ NOM
200
1,000
I R , LEAKAGE (nA)
C, CAPACITANCE (pF)
250
150
100
+150°C
100
+25°C
10
−40°C
50
0
5.6
6.8
12
20
27
VZ, NOMINAL ZENER VOLTAGE (V)
0
33
5.6
6.8
Figure 1. Typical Capacitance
200
150
FR-5 BOARD
50
0
0
25
50
75
100
125
150
175
PEAK PULSE DERATING IN % OF PEAK POWER
OR CURRENT @ TA = 25 ° C
PD , POWER DISSIPATION (mW)
ALUMINA SUBSTRATE
100
90
80
70
60
50
40
30
20
10
0
0
25
50
VALUE (%)
100
HALF VALUE−
50
IRSM
2
tP
100
125
150
175
200
Figure 4. Pulse Derating Curve
100
tr
90
% OF PEAK PULSE CURRENT
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO 50%
OF IRSM.
tr ≤ 10 ms
75
TA, AMBIENT TEMPERATURE (°C)
Figure 3. Steady State Power Derating Curve
PEAK VALUE−I RSM
33
100
TA, AMBIENT TEMPERATURE (°C)
tr
27
Figure 2. Typical Leakage Current
300
250
20
VZ, NOMINAL ZENER VOLTAGE (V)
PEAK VALUE IRSM @ 8 ms
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
80
70
60
HALF VALUE IRSM/2 @ 20 ms
50
40
30
tP
20
10
0
0
1
2
3
4
t, TIME (ms)
Figure 5. 10 × 1000 ms Pulse Waveform
REV.0.1-FEB.16.2009
0
0
20
40
60
80
t, TIME (ms)
Figure 6. 8 × 20 ms Pulse Waveform
PAGE . 2
PJQA6V2
RECTANGULAR
WAVEFORM, TA = 25°C
10
UNIDIRECTIONAL
200
180
PPK , PEAK SURGE POWER (W)
Ppk PEAK SURGE POWER (W)
100
160
8 × 20 WAVEFORM AS PER FIGURE 6
140
120
100
80
10 × 100 WAVEFORM AS PER FIGURE 5
60
40
20
1.0
0.1
1.0
10
100
PW, PULSE WIDTH (ms)
Figure 7. Maximum Non−Repetitive Surge
Power, Ppk versus PW
1000
0
5.6
6.8
12
20
27
33
NOMINAL VZ
Figure 8. Typical Maximum Non−Repetitive
Surge Power, Ppk versus VBR
Power is defined as VRSM x IZ(pk) where VRSM
is the clamping voltage at IZ(pk).
REV.0.1-FEB.16.2009
PAGE . 3
PJQA6V2
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 10K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2009
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
REV.0.1-FEB.16.2009
PAGE . 4