SANYO ENA1125

FH102A
Ordering number : ENA1125
SANYO Semiconductors
DATA SHEET
NPN Epitaxial Planar Silicon Composite Transistor
FH102A
High-Frequency Low-Noise Amplifier,
Differential Amplifier Applications
Features
•
•
•
Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency
greatly.
The FH102A is formed with two chips, being equivalent to the 2SC5226A, placed in one package.
Optimal for differential amplification due to excellent thermal equilibrium and pair capability.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Symbol
Conditions
Ratings
Unit
20
V
Collector-to-Emitter Voltage
VCBO
VCEO
10
V
Emitter-to-Base Voltage
VEBO
2
V
IC
PC
70
mA
When mounted on ceramic substrate (250mm2✕0.8mm) 1unit
300
mW
When mounted on ceramic substrate (250mm2✕0.8mm)
500
mW
150
°C
--55 to +150
°C
Collector Current
Collector Dissipation
Total Dissipation
Junction Temperature
PT
Tj
Storage Temperature
Tstg
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
min
typ
Unit
max
Collector Cutoff Current
ICBO
VCB=10V, IE=0A
1.0
μA
Emitter Cutoff Current
IEBO
hFE
VEB=1V, IC=0A
10
μA
DC Current Gain
Marking : 102
VCE=5V, IC=20mA
90
200
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
60408AB TI IM TC-00001436 No. A1125-1/6
FH102A
Continued from preceding page.
Parameter
Symbol
DC Current Gain Ratio
hFE(small/large)
VBE(largel-smal)
fT
Base-to-Emitter Voltage Diffrence
Gain-Bandwidth Product
Output Capacitance
Cob
Reverse Transfer Capacitance
Cre
2
⏐S21e⏐ 1
2
⏐S21e⏐ 2
Forward Transfer Gain
Noise Figure
NF
Ratings
Conditions
min
typ
VCE=5V, IC=20mA
VCE=5V, IC=20mA
0.7
VCE=5V, IC=20mA
VCB=10V, f=1MHz
5
0.95
1.0
mV
7
GHz
0.75
VCB=10V, f=1MHz
VCE=5V, IC=20mA, f=1GHz
Unit
max
1.2
0.5
9
VCE=2V, IC=3mA, f=1GHz
VCE=5V, IC=7mA, f=1GHz
pF
pF
12
dB
8
dB
1.0
1.8
dB
Note) The specifications shown above are for each individual transistor except the hFE(small/large) and VBE (large-small) for which pair capability is
also shown.
Package Dimensions
Electrical Connection
0.425
B1
B2
E2
C1
E1
C2
6
5
0.2
0.25 0.15
4
0.05
2.1
1.25
0.425
unit : mm (typ)
7026-002
1
2
3
0.65
1 : Collector1
2 : Emitter1
3 : Collector2
4 : Emitter2
5 : Base2
6 : Base1
0.9
0.2
2.0
SANYO : MCP6
hFE -- IC
3
Gain-Bandwidth Product, f T -- GHz
2
DC Current Gain, hFE
f T -- IC
2
VCE=5V
VCE=5V
100
7
5
3
2
10
7
10
7
5
3
2
1.0
7
5
5
3
5
7 1.0
2
3
5
7 10
2
3
Collector Current, IC -- mA
5
7 100
2
ITR10753
7 1.0
2
3
5
7 10
2
3
5
Collector Current, IC -- mA
7 100
2
ITR10754
No. A1125-2/6
FH102A
Cob -- VCB
3
Reverse Transfer Capacitance, Cre -- pF
1.0
7
5
3
2
0.1
7
5
f=1MHz
2
1.0
7
5
3
2
0.1
7
5
7 0.1
2
3
5
7 1.0
2
3
5
7 10
Collector-to-Base Voltage, VCB -- V
2
3
7 0.1
10
8
6
4
2
5
7 1.0
2
3
5
7 10
2
3
ITR10756
⏐S21e⏐ -- IC
14
2
Forward Transfer Gain, ⏐S21e⏐ -- dB
VCE=5V
f=1GHz
3
2
NF -- IC
12
2
Collector-to-Base Voltage, VCB -- V
ITR10755
f=1GHz
12
V
CE
=5
V
V
CE
=2
V
Output Capacitance, Cob -- pF
2
Noise Figure, NF -- dB
Cre -- VCB
3
f=1MHz
10
8
6
4
2
0
0
3
5
7 1.0
2
3
5
7 10
2
3
5
Collector Current, IC -- mA
7 100
2
ITR10757
PC -- Ta
600
3
5
7 1.0
2
3
5
7 10
2
3
Collector Current, IC -- mA
5
7 100
2
ITR10758
Collector Dissipation, PC -- mW
When mounted on ceramic substrate
(250mm2✕0.8mm)
500
400
300
To
t
200
1u
nit
al
di
ss
ip
ati
on
100
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
ITR10759
No. A1125-3/6
FH102A
S Parameter
f=100MHz, 200 to 2000MHz(200MHz Step)
f=100MHz, 200 to 2000MHz(200MHz Step)
j50
j100
j150
10
25
50
100 150 250 500
0.1GHz
--j10
--j25
0.1GHz --j250
0.1GHz
--j200
--j150
VCE=5V
IC=7mA
--j50
0.1GHz
±180°
VCE=5V
IC=20mA
VCE=5V
IC=20mA
8
12
VCE=5V
IC=7mA
0
--60°
--120°
--90°
ITR10761
f=100MHz, 200 to 2000MHz(200MHz Step)
2.0GHz
j50
60°
2.0GHz
j25
j100
j150
30°
VCE=2V
IC=3mA
j200
j250
j10
0.1GHz 0.04 0.08 0.12 0.16 0.2
0
±180°
20
--30°
2.0GHz
150°
16
--j100
f=100MHz, 200 to 2000MHz(200MHz Step)
120°
2.0GHz 4
--150°
ITR10760
90°
30°
VCE=2V
0.1GHz I =3mA
C
2.0GHz
2.0GHz
2.0GHz
VCE=2V
IC=3mA
VCE=5V
IC=7mA
150°
j200
j250
j10
60°
VCE=5V
IC=20mA
120°
j25
0
90°
0.1GHz
0
10
25
50
2.0GHz
VCE=5V
IC=7mA
--j10
VCE=5V
IC=20mA
VCE=2V
IC=3mA
--30°
--150°
100 150 250 500
0.1GHz
--j250
--j200
--j150
--j100
--j25
--60°
--120°
--90°
ITR10762
--j50
ITR10763
No. A1125-4/6
FH102A
S Parameters (Common emitter)
VCE=5V, IC=7mA, ZO=50Ω
Freq(MHz)
⏐S11⏐
∠S11
⏐S21⏐
∠S21
⏐S12⏐
∠S12
⏐S22⏐
∠S22
100
0.720
--46.0
17.973
148.5
0.030
68.5
0.880
--23.6
200
0.612
--80.9
13.927
127.3
0.047
57.1
0.697
--37.6
400
0.497
--121.3
8.656
105.0
0.066
51.3
0.479
--47.6
600
0.456
--143.5
6.080
92.8
0.079
52.9
0.382
--50.5
800
0.440
--157.6
4.725
84.3
0.094
55.4
0.339
--51.8
1000
0.436
--167.5
3.864
77.0
0.110
56.8
0.323
--53.4
1200
0.434
--176.1
3.258
70.3
0.126
57.9
0.312
--55.8
1400
0.433
176.6
2.847
64.5
0.143
58.4
0.304
--58.3
1600
0.433
170.9
2.329
57.4
0.160
58.9
0.296
--62.0
1800
0.434
165.0
2.252
54.2
0.178
58.6
0.293
--65.0
2000
0.439
159.6
2.057
49.2
0.197
58.1
0.294
--68.1
∠S11
⏐S21⏐
∠S21
⏐S12⏐
∠S12
⏐S22⏐
∠S22
--38.2
VCE=5V, IC=20mA, ZO=50Ω
Freq(MHz)
⏐S11⏐
100
0.481
--78.8
29.795
132.9
0.022
63.9
0.707
200
0.420
--119.2
19.008
112.2
0.033
60.8
0.470
--51.1
400
0.391
--151.6
10.416
95.4
0.052
64.7
0.296
--55.3
600
0.386
--166.4
7.084
86.6
0.071
67.2
0.236
--56.1
800
0.381
--175.9
5.407
80.1
0.092
68.4
0.213
--56.6
1000
0.382
178.2
4.401
74.1
0.114
67.8
0.208
--57.9
1200
0.385
172.1
3.701
68.5
0.134
66.8
0.204
--60.7
1400
0.388
166.7
3.217
63.6
0.156
65.6
0.202
--63.5
1600
0.390
162.1
2.839
58.8
0.176
64.0
0.199
--67.9
1800
0.391
156.7
2.534
54.3
0.197
62.4
0.197
--71.2
2000
0.394
152.1
2.319
50.1
0.219
60.6
0.197
--74.2
VCE=2V, IC=3mA, ZO=50Ω
Freq(MHz)
⏐S11⏐
∠S11
⏐S21⏐
∠S21
⏐S12⏐
∠S12
⏐S22⏐
∠S22
100
0.858
--32.4
9.413
157.2
0.040
72.6
0.945
--16.5
200
0.782
--60.7
8.187
138.5
0.070
59.2
0.833
--29.3
400
0.653
--101.1
5.855
113.8
0.101
44.5
0.637
--43.2
600
0.588
--126.5
4.337
98.4
0.114
39.1
0.515
--50.0
800
0.557
--143.7
3.444
87.7
0.122
38.0
0.454
--53.8
1000
0.543
--156.3
2.871
78.5
0.130
38.6
0.426
--57.1
1200
0.536
--166.8
2.446
70.5
0.137
40.3
0.407
--60.3
1400
0.533
--175.5
2.145
63.5
0.146
42.5
0.393
--63.8
1600
0.527
177.0
1.904
57.1
0.155
45.0
0.382
--68.0
1800
0.525
170.3
1.714
51.7
0.168
47.3
0.379
--72.0
2000
0.528
163.8
1.564
45.9
0.183
49.2
0.378
--75.8
No. A1125-5/6
FH102A
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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
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product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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This catalog provides information as of June, 2008. Specifications and information herein are subject
to change without notice.
PS No. A1125-6/6