SANYO TND027MP_08

TND027MP
Ordering number : EN7691B
SANYO Semiconductors
DATA SHEET
ExPD(Excellent Power Device)
TND027MP
Lowside Power Switch Lamp-, Solenoid-,
and Motor-Driving Applications
Features
•
•
•
•
N-channel MOSFET built in.
Overheat protection. (Self recovery type)
Overcurrent protection. (Self recovery type current limiting function)
Overvoltage protection.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Output Current
Input Voltage
Symbol
Conditions
Ratings
VDS
IO(DC)
VIN
Allowable Power Dissipation
Operating Supply Voltage
Operating Temperature
Tj
Storage Temperature
Tstg
V
1.5
A
--0.3 to +10
V
1.0
W
PD
VDS(opr)
Topr
Junction Temperature
Unit
60
40
V
--40 to +85
°C
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Clamp Voltage
Output-OFF Current
Input Threshold Voltage
Protection Circuit Operating Input Voltage
Drain-to-Source ON Resistance
Input Current (Output On)
Symbol
Conditions
VDS, clamp
VIN=0V, IO=1mA
IDSS(1)
VIN=0V, VDS=50V
IDSS(2)
VIN=0V, VDS=12V
VIN(th)
VIN(opr)
VDS=5V, IO=1mA
RDS(on)
IIN
VIN=5V, IO=1A
VIN=5V
Ratings
min
typ
Unit
max
60
V
10
5
1.0
1.5
4
0.3
μA
μA
2.0
V
10
V
0.4
Ω
0.6
mA
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
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customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22008 TI IM / D2607IP TI IM TC-00001113 / 80206 / O2203 TS IM TA-100479 No.7691-1/5
TND027MP
Continued from preceding page.
Parameter
Symbol
Over-Heat Detecting Temperature
Tj(sd)
Over-Current Detecting Current
Is
Over-Current Limit (Peak)
ILMT
Input Clamp Voltage
Ratings
Conditions
min
VIN=5V, IO=1A
VIN=5V
VIN=5V
typ
Unit
max
120
150
190
°C
3.0
6.0
9.0
A
3.0
6.0
9.0
A
VIN, clamp
IIN=1mA
Notes : 1. Overcurrent protection circuit limits the output current to the range of overcurrent limit value.
10
V
2. During overheat protecting operation, output current is turned off.
Package Dimensions
Block Diagram
unit : mmm (typ)
7520-003
OUT(D)
4.7
6.0
5.0
Overcurrent
protective
circuit
8.5
ESD
protective
circuit
3.0
0.5
0.6
0.5
Output current
control
IN
Gate
shutdown
circuit
Overheat
protective
circuit
14.0
1.0
0.5
Overvoltage
protective circuit
GND(S)
1 : GND
2 : OUT
3 : IN
1 2 3
SANYO : MP
1.45
RDS(on) -- Ta
0.5
Drain-to-Source
ON Resistance, RDS(on) -- Ω
0.4
IO=1A
0.8
5V
4V
0.3
6V
0.2
0.1
0
--50
RDS(on) -- VIN
1.0
IO=1A
Drain-to-Source
ON Resistance, RDS(on) -- Ω
1.45
0.6
0.4
Ta=85°C
0.2
25°C
--40°C
0
--25
0
25
50
Ambient Temperature, Ta -- °C
75
100
IT05233
0
2
4
6
8
Input Voltage, VIN -- V
10
12
IT05234
No.7691-2/5
TND027MP
IIN -- Ta
0.12
IIN -- VIN
1.4
Ta=25°C
VIN=5V
1.2
Input Current, IIN -- mA
Input Current, IIN -- mA
0.10
0.08
0.06
0.04
0.02
1.0
al)
rm
0.8
no
(ab
I IN
0.6
0.4
0.2
IIN(normal)
0
--50
0
--25
0
25
50
75
Ambient Temperature, Ta -- °C
100
0
4
6
8
10
Input Voltage, VIN -- V
IS -- Ta
9
2
IT05235
IT05236
IS -- VIN
9
Overcurrent Detecting Current, IS -- A
Overcurrent Detecting Current, IS -- A
Ta=25°C
8
7
6V
5V
6
4V
5
4
3
--50
8
7
6
5
4
3
--25
0
25
50
75
Ambient Temperature, Ta -- °C
4
100
6
7
8
9
Input Voltage, VIN -- V
ILMT -- Ta
9
5
IT05237
10
IT05238
ILMT -- VIN
12
8
Overcurrent Limit, ILMT -- A
6V
5V
7
4V
6
5
4
3
--50
0
25
50
75
Drain-to-Source Clamp Voltage, VDS, Clamp -- V
Ambient Temperature, Ta -- °C
8
6
4
2
100
4
VIN=0V
IO=1mA
68
66
64
62
60
58
--25
0
25
50
Ambient Temperature, Ta -- °C
5
75
100
IT05241
6
7
8
9
Input Voltage, VIN -- V
IT05239
VDS, clamp -- Ta
70
56
--50
10
0
--25
10
IT05240
VIN, clamp -- Ta
13
Input Clamp Voltage, VIN, Clamp -- V
Overcurrent Limit, ILMT -- A
Ta=25°C
IIN=1mA
12
11
10
9
8
--50
--25
0
25
50
Ambient Temperature, Ta -- °C
75
100
IT05242
No.7691-3/5
TND027MP
VIN(th) -- Ta
2.0
VDS=24V
1.8
1.8
1.6
1.2
25°C
1.2
1.0
0.8
--40°
C
1.4
1.4
5°C
1.6
Ta=
8
Output Current, IO -- A
Threshold Voltage, VIN(th) -- V
IO -- VIN
2.0
VDS=5V
IO=1mA
0.6
0.4
1.0
0.2
0.8
--50
0
--25
0
25
50
75
1
Tj(sd) -- VIN
160
2
3
Input Voltage, VIN -- V
IT05243
IT05244
PD -- Ta
1.2
TND027MP
Allowable Power Dissipation, PD -- W
Overheat Detecting Temperature, Tj(sd) -- °C
Ambient Temperature, Ta -- °C
100
158
156
154
152
150
148
146
144
142
140
4.0
4.5
5.0
Input Voltage, VIN -- V
5.5
1.0
0.8
0.6
0.4
0.2
0
--40
6.0
--20
0
20
40
60
Ambient Temperature, Ta -- °C
IT05245
80
100
IT05246
Sample Application Circuit
AC24V
AC100V
Lamp
OUT
TND027MP
IN
Microcontroller
5V
GND
Another Sample Application Circuit (Solenoid drive)
AC24V
AC100V
Solenoid
OUT
TND027MP
IN
Microcontroller
5V
GND
No.7691-4/5
TND027MP
Operation Description
• The output power MOSFET will be turned on when the input voltage exceeds the input threshold voltage (4 to 6V
is recommended), and then the lamp will be turned on by the current flowing to the lamp. Conversely, the output
power MOSFET will be turned off when the input voltage goes below the input threshold voltage, and the lamp
will be turned off.
• The inrush current that occurs during normal lamp operation is limited to a preset value by the built-in overcurrent
protecting circuit, which makes the lamp life longer.
• The internal overcurrent protection function limits the current of output power MOSFET when output current of at
least the overcurrent detecting current value flows at load short. Besides, if the device temperature exceeds the
allowable power dissipation, overheat protection function protects the power switch from being broken down by
turning off the current of output power MOSFET when Tj comes to 150°C (typical).
• As an example of application circuit, DC voltage can also be controlled as a solenoid drive.
Addition
• The diode between OUT and GND in the block diagram is parasitic diode of the MOSFET.
• Not apply a voltage on IN terminal during the period when OUT voltage is lower then GND voltage when driving
a solenoid or a motor.
• Be sure connect a diode between OUT terminal and GND terminal when you want to apply a voltage on IN
terminal under the above-stated state (that is, OUT Voltage < GND Voltage).
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
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without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
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with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
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intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of February, 2008. Specifications and information herein are subject
to change without notice.
PS No.7691-5/5