FDS9958_F085 Dual P-Channel PowerTrench® MOSFET -60V, -2.9A, 105mΩ Features General Description Max rDS(on) =105mΩ at VGS = -10V, ID = -2.9A These P-channel logic level specified MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Max rDS(on) =135mΩ at VGS = -4.5V, ID = -2.5A Qualified to AEC Q101 RoHS Compliant These devices are well suited for portable electronics applications: load switching and power management, battery charging and protection circuits. Applications Load Switch Power Management D2 D2 D1 D1 S1 Pin 1 G1 S2 G2 D2 5 D2 6 D1 7 D1 8 Q2 Q1 4 G2 3 S2 2 G1 1 S1 SO-8 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Note 1a) -Pulsed Ratings -60 Units V ±20 V -2.9 -12 EAS Single Pulse Avalanche Energy (Note 3) PD Power Dissipation (Note 1a) 1.6 Power Dissipation (Note 1b) 0.9 TJ, TSTG Operating and Storage Junction Temperature Range Power Dissipation for Dual Operation 54 A mJ 2 -55 to +150 W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 40 (Note 1a) 78 °C/W Package Marking and Ordering Information Device Marking FDS9958 Device FDS9958_F085 ©2008 Fairchild Semiconductor Corporation FDS9958_F085 Rev.A Package SO-8 1 Reel Size 330mm Tape Width 12mm Quantity 2500units www.fairchildsemi.com FDS9958_F085 Dual P-Channel PowerTrench® MOSFET November 2008 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = -250µA, VGS = 0V -60 ID = -250µA, referenced to 25°C VDS = -48V, VGS = 0V V -52 mV/°C -1 TJ = 125°C -100 VGS = ±20V, VDS = 0V µA ±100 nA -3.0 V On Characteristics VGS(th) Gate to Source Threshold Voltage ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance VGS = VDS, ID = -250µA -1.0 ID = -250µA, referenced to 25°C -1.6 4 VGS = -10V, ID = -2.9A mV/°C 82 105 VGS = -4.5V, ID = -2.5A 103 135 131 190 VDD = -5V, ID = -2.9A 7.7 VGS = -10V, ID = -2.9A, TJ= 125°C mΩ S Dynamic Characteristics Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS = -30V, VGS = 0V, f = 1MHz 765 1020 pF 90 120 pF 40 65 pF 6 12 ns 3 10 ns 27 43 ns 6 12 ns 16 23 nC 8 12 nC Switching Characteristics td(on) Turn-On Delay Time td(off) Turn-Off Delay Time Qg Total Gate Charge Qgs Gate to Source Charge VDD = -30V, ID = -2.9A, VGS = -10V, RGEN = 6Ω tr Rise Time tf Fall Time Qg Total Gate Charge Qgd Gate to Drain “Miller” Charge VGS = 0V to -10V VGS = 0V to -4.5V VDD = -30V, ID = -2.9A 2 nC 3 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage Qrr Reverse Recovery Charge trr Reverse Recovery Time VGS = 0V, IS = -1.3A (Note 2) IF = -2.9A, di/dt = 100A/µs -0.8 -1.2 V 26 42 ns 21 35 nC NOTES: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78°C/W when mounted on a 1 in2 pad of 2 oz copper b) 135°C/W when mounted on a minimun pad 2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3. UIL condition: Starting TJ = 25°C, L = 3mH, IAS = 6A, VDD = 60V, VGS = 10V. ©2008 Fairchild Semiconductor Corporation FDS9958_F085 Rev.A 2 www.fairchildsemi.com FDS9958_F085 Dual P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted VGS = - 4V VGS = -10V -ID, DRAIN CURRENT (A) 10 VGS = -3.5V VGS = -5V 8 VGS = - 4.5V 6 VGS = -3V 4 PULSE DURATION = 300µs DUTY CYCLE = 2.0%MAX 2 0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 12 0 1 2 3 4 VGS = -3.5V VGS = -4V 1.5 ID = -2.9A VGS = -10V rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.6 -75 -50 -25 0 25 50 75 100 125 150 0.5 0 2 4 12 -IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 300µs DUTY CYCLE = 2.0%MAX VDD = -5V 6 4 TJ = 150oC TJ = 2 25oC TJ = -55oC 0 1 2 3 4 ID = -2.9A 210 10 12 PULSE DURATION = 300µs DUTY CYCLE = 2.0%MAX 180 TJ = 125oC 150 120 TJ = 25oC 90 60 2 20 10 4 6 8 10 VGS = 0V 1 TJ = 150oC TJ = 25oC 0.1 TJ = -55oC 0.01 1E-3 0.0 5 0.2 0.4 0.6 0.8 1.0 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 6. Source to Drain Diode Forward Voltage vs Source Current Figure 5. Transfer Characteristics ©2008 Fairchild Semiconductor Corporation FDS9958_F085 Rev.A 8 Figure 4. On-Resistance vs Gate to Source Voltage Figure 3. Normalized On- Resistance vs Junction Temperature 8 6 -VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (oC) 10 VGS = -10V PULSE DURATION = 300µs DUTY CYCLE = 2.0%MAX 240 1.8 1.6 VGS = -5V VGS = -4.5V 1.0 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Figure 1. On-Region Characteristics -ID, DRAIN CURRENT (A) VGS = -3V 2.0 -ID, DRAIN CURRENT(A) -VDS, DRAIN TO SOURCE VOLTAGE (V) 0 2.5 3 www.fairchildsemi.com FDS9958_F085 Dual P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2000 ID = -2.9A 1000 8 VDD = -20V 6 Ciss CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = -30V 4 VDD = -40V 2 0 0 5 10 15 100 Coss 10 0.1 20 10 60 Figure 8. Capacitance vs Drain to Source Voltage Figure 7. Gate Charge Characteristics 4 3.0 3 2 -ID, DRAIN CURRENT (A) -IAS, AVALANCHE CURRENT(A) 1 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE(nC) TJ = 25oC TJ = 125oC 1 0.01 0.1 1 10 2.5 2.0 1.0 VGS = -10V o RθJA = 78 C/W 0.5 0.0 25 100 VGS = -4.5V 1.5 50 75 100 125 150 o tAV, TIME IN AVALANCHE(ms) TA, AMBIENT TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 20 200 10 0.1ms P(PK), PEAK TRANSIENT POWER (W) -ID, DRAIN CURRENT (A) Crss f = 1MHz VGS = 0V 1ms 1 10ms THIS AREA IS LIMITED BY rDS(on) 0.1 100ms SINGLE PULSE TJ = MAX RATED 1s RθJA = 135oC/W 0.01 0.1 10s TA = 25oC 1 DC 10 100 200 -VDS, DRAIN to SOURCE VOLTAGE (V) VGS = -10V SINGLE PULSE RθJA = 135oC/W TA = 25oC 10 1 0.5 -3 10 -2 10 -1 10 0 10 1 2 10 10 3 10 t, PULSE WIDTH (s) Figure 12. Single Pulse Maximum Power Dissipation Figure 11. Forward Bias Safe Operating Area ©2008 Fairchild Semiconductor Corporation FDS9958_F085 Rev.A 100 4 www.fairchildsemi.com FDS9958_F085 Dual P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJA 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.1 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 135 C/W 0.01 0.005 -3 10 -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve ©2008 Fairchild Semiconductor Corporation FDS9958_F085 Rev.A 5 www.fairchildsemi.com FDS9958_F085 Dual P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * FPS™ F-PFS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ ™ TinyPower™ Saving our world, 1mW /W /kW at a time™ TinyPWM™ SmartMax™ TinyWire™ SMART START™ µSerDes™ SPM® STEALTH™ SuperFET™ UHC® SuperSOT™-3 Ultra FRFET™ SuperSOT™-6 UniFET™ SuperSOT™-8 VCX™ SupreMOS™ VisualMax™ SyncFET™ XS™ ® ® tm PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ The Power Franchise® * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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