MCP73861/2/3/4 Advanced Single or Dual Cell, Fully Integrated Li-Ion / Li-Polymer Charge Management Controllers Features Description • Linear Charge Management Controllers - Integrated Pass Transistor - Integrated Current Sense - Reverse-Blocking Protection • High-Accuracy Preset Voltage Regulation: + 0.5% • Four Selectable Voltage Regulation Options: - 4.1V, 4.2V – MCP73861/3 - 8.2V, 8.4V – MCP73862/4 • Programmable Charge Current: 1.2A Maximum • Programmable Safety Charge Timers • Preconditioning of Deeply Depleted Cells • Automatic End-of-Charge Control • Optional Continuous Cell Temperature Monitoring • Charge Status Output for Direct LED Drive • Fault Output for Direct LED Drive • Automatic Power-Down • Thermal Regulation • Temperature Range: -40°C to +85°C • Packaging: 16-Pin, 4 x 4 QFN 16-Pin SOIC The MCP7386X family of devices are highly advanced linear charge management controllers for use in spacelimited, cost-sensitive applications. The devices combine high-accuracy, constant voltage and current regulation, cell preconditioning, cell temperature monitoring, advanced safety timers, automatic charge termination, internal current sensing, reverse-blocking protection, charge status and fault indication in either a spacesaving 16-pin, 4 x 4 QFN or 16-pin SOIC package. The MCP7386X provides a complete, fully-functional, standalone charge management solution with a minimum number of external components. Applications • • • • • • • Lithium-Ion/Lithium-Polymer Battery Chargers Personal Data Assistants (PDAs) Cellular Telephones Hand-Held Instruments Cradle Chargers Digital Cameras MP3 Players The MCP73861/3 is intended for applications utilizing single-cell Lithium-Ion or Lithium-Polymer battery packs, while the MCP73862/4 is intended for dual series cell Lithium-Ion or Lithium-Polymer battery packs. The MCP73861/3 have two selectable voltageregulation options available (4.1V and 4.2V), for use with either coke or graphite anodes and operate with an input voltage range of 4.5V to 12V. The MCP73862/4 have two selectable voltage-regulation options available (8.2V and 8.4V), for use with coke or graphite anodes, and operate with an input voltage range of 8.7V to 12V. The only difference between the MCP73861/2 and MCP73863/4, respectively, is the function of the charge status output (STAT1) when a charge cycle has been completed. The MCP73861/2 flash the output, while the MCP73863/4 turn the output off. Refer to Section 5.2.1 “Charge Status Outputs (STAT1,STAT2)”. The MCP7386X family of devices are fully specified over the ambient temperature range of -40°C to +85°C. EN VSS2 16 15 14 13 VSET 1 12 VBAT3 MCP73861 MCP73862 MCP73863 MCP73864 VDD1 2 VDD2 3 16-Pin SOIC 11 VBAT2 10 VBAT1 9 VSS3 VSS1 4 © 2005 Microchip Technology Inc. 8 TIMER 7 THERM 6 THREF PROG 5 STAT2 1 16 EN STAT1 2 15 VSS2 VSET 3 VDD1 4 VDD2 5 VSS1 6 PROG 7 THREF 8 MCP73861 MCP73862 MCP73863 MCP73864 STAT2 16-Pin QFN STAT1 Package Types 14 VBAT3 13 VBAT2 12 VBAT1 11 VSS3 10 TIMER 9 THERM DS21893C-page 1 MCP73861/2/3/4 Typical Application 1.2A Lithium-Ion Battery Charger 5V 4.7µF 2, 3 VDD 1 VSET 14 16 15 5 VBAT3 12 10, 11 V 4.7 µF BAT THREF 6 7 6.19 kΩ THERM STAT1 7.32 kΩ 8 STAT2 TIMER 0.1 µF VSS 4, 9, 13 PROG EN + Single Lithium-Ion – Cell MCP73861/3 Functional Block Diagram Direction Control VBAT1 VDD1 VDD2 VBAT2 VDD G = 0.001 4 kΩ VREF 90 kΩ 1 kΩ PROG Charge Current Control Amplifier + Voltage Control Amplifier – + 11 kΩ 10 kΩ IREG/12 VREF Charge_OK Precon Precondition Control VBAT3 Precondition Comp. 600 kΩ (1.65 MΩ) – + – 10 kΩ + 110 kΩ Charge Termination Comparator – VREF UVLO COMPARATOR + – 148.42 kΩ Constant-Voltage/ Recharge Comp. VUVLO – + EN Power-On Delay Values in ( ) reflect the MCP73862/4 devices 1.58 kΩ VREF 300.04 kΩ Bias and Reference Generator VUVLO VREF (1.2V) VSET 10.3 kΩ (8.58 kΩ) THREF 100 kΩ + – THERM 50 kΩ + – 50 kΩ TIMER DS21893C-page 2 Temperature Comparators VSS1 VSS2 VSS3 STAT1 Drv Stat 1 IREG/12 Oscillator Charge Control, Charge Timers And Status Logic STAT2 Drv Stat 2 Charge_OK © 2005 Microchip Technology Inc. MCP73861/2/3/4 1.0 ELECTRICAL CHARACTERISTICS † Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Absolute Maximum Ratings† VDDN ..............................................................................13.5V VBATN, VSET, EN, STAT1, STAT2 w.r.t. VSS .................................................................-0.3 to (VDD + 0.3)V PROG, THREF, THERM, TIMER w.r.t. VSS ..............-0.3 to 6V Maximum Junction Temperature, TJ ............ Internally Limited Storage temperature .....................................-65°C to +150°C ESD protection on all pins: Human Body Model (1.5 kΩ in series with 100 pF)....≥ 4 kV Machine Model (200 pF, No series resistance) ...........300V DC CHARACTERISTICS Electrical Specifications: Unless otherwise indicated, all limits apply for VDD= [VREG(typ.) + 0.3V] to 12V, TA = -40°C to +85°C. Typical values are at +25°C, VDD = [VREG (typ.) + 1.0V] Sym Min Typ Max Unit s VDD 4.5 — 12 V 8.7 — 12 V MCP73862/4 ISS — 0.17 4 µA Disabled — 0.53 4 mA Operating VSTART 4.25 4.5 4.65 V MCP73861/3 8.45 8.8 9.05 V MCP73862/4 Parameters Conditions Supply Input Supply Voltage Supply Current UVLO Start Threshold MCP73861/3 VDD Low-to-High UVLO Stop Threshold VSTOP 4.20 4.4 4.55 V MCP73861/3 8.40 8.7 8.95 V MCP73862/4 VDD High-to-Low Voltage Regulation (Constant-Voltage Mode) Regulated Output Voltage VREG 4.079 4.1 4.121 V MCP73861/3, VSET = VSS 4.179 4.2 4.221 V MCP73861/3, VSET = VDD 8.159 8.2 8.241 V MCP73862/4, VSET = VSS 8.358 8.4 8.442 V MCP73862/4, VSET = VDD VDD = [VREG(typ.) + 1V], IOUT = 10 mA TA = -5°C to +55°C Line Regulation |(ΔVBAT/VBAT) | /ΔVDD — 0.025 0.25 Load Regulation |ΔVBAT/VBAT| — 0.01 0.25 % IOUT = 10 mA to 150 mA VDD = [VREG(typ.)+1V] PSRR — 60 — dB IOUT = 10 mA, 10 Hz to 1 kHz — 42 — dB IOUT = 10 mA, 10 Hz to 10 kHz — 28 — dB IOUT = 10 mA, 10 Hz to 1 MHz — 0.23 1 µA VDD < VBAT = VREG(typ.) Supply Ripple Attenuation Output Reverse-Leakage Current IDISCHARGE %/V VDD = [VREG(typ.)+1V] to 12V IOUT = 10 mA Current Regulation (Fast Charge Constant-Current Mode) Fast Charge Current Regulation IREG 85 100 115 mA PROG = OPEN 1020 1200 1380 mA PROG = VSS 425 500 575 mA PROG = 1.6 kΩ TA= -5°C to +55°C © 2005 Microchip Technology Inc. DS21893C-page 3 MCP73861/2/3/4 DC CHARACTERISTICS (Continued) Electrical Specifications: Unless otherwise indicated, all limits apply for VDD= [VREG(typ.) + 0.3V] to 12V, TA = -40°C to +85°C. Typical values are at +25°C, VDD = [VREG (typ.) + 1.0V] Parameters Sym Min Typ Max Unit s Conditions Preconditioning Current Regulation (Trickle Charge Constant-Current Mode) Precondition Current Regulation IPREG 5 10 15 mA PROG = OPEN 60 120 180 mA PROG = VSS 25 50 75 mA PROG = 1.6 kΩ TA=-5°C to +55°C Precondition Threshold Voltage VPTH 2.70 2.80 2.90 V MCP73861/3, VSET = VSS 2.75 2.85 2.95 V MCP73861/3, VSET = VDD 5.40 5.60 5.80 V MCP73862/4, VSET = VSS 5.50 5.70 5.90 V MCP73862/4, VSET = VDD VBAT Low-to-High Charge Termination Charge Termination Current ITERM 6 8.5 11 mA PROG = OPEN 70 90 120 mA PROG = VSS 32 41 50 mA PROG = 1.6 kΩ TA=-5°C to +55°C Automatic Recharge Recharge Threshold Voltage VRTH VREG 300 mV VREG 200 mV VREG -100 mV V MCP73861/3 VREG 600 mV VREG 400 mV VREG 200 mV V MCP73862/4 VBAT High-to-Low Thermistor Reference Thermistor Reference Output Voltage VTHREF 2.475 2.55 2.625 V TA = 25°C, VDD = VREG(typ.) + 1V, ITHREF = 0 mA Thermistor Reference Source Current ITHREF 200 — — µA Thermistor Reference Line Regulation |(ΔVTHREF/VT HREF)|/ ΔVDD — 0.1 0.25 Thermistor Reference Load Regulation |ΔVTHREF/VT 0.01 0.10 %/V VDD = [VREG(typ.) + 1V] to 12V % ITHREF = 0 mA to 0.20 mA HREF| Thermistor Comparator VT1 1.18 1.25 1.32 V VT1HYS — -50 — mV Upper Trip Threshold Upper Trip Point Hysteresis VT2 0.59 0.62 0.66 V VT2HYS — 80 — mV IBIAS — — 2 μA Lower Trip Threshold Lower Trip Point Hysteresis Input Bias Current Status Indicator – STAT1, STAT2 Sink Current ISINK 4 8 12 mA Low Output Voltage VOL — 200 400 mV ISINK = 1 mA Input Leakage Current ILK — 0.01 1 μA ISINK = 0 mA, VSTAT1,2 = 12V Enable Input Input High Voltage Level VIH 1.4 — — V Input Low Voltage Level VIL — — 0.8 V Input Leakage Current ILK — 0.01 1 μA DS21893C-page 4 VENABLE = 12V © 2005 Microchip Technology Inc. MCP73861/2/3/4 DC CHARACTERISTICS (Continued) Electrical Specifications: Unless otherwise indicated, all limits apply for VDD= [VREG(typ.) + 0.3V] to 12V, TA = -40°C to +85°C. Typical values are at +25°C, VDD = [VREG (typ.) + 1.0V] Sym Min Typ Max Unit s Die Temperature TSD — 155 — °C Die Temperature Hysteresis TSDHYS — 10 — °C Parameters Conditions Thermal Shutdown AC CHARACTERISTICS Electrical Specifications: Unless otherwise indicated, all limits apply for VDD = [VREG (typ.) + 0.3V] to 12V, TA = -40°C to +85°C. Typical values are at +25°C, VDD = [VREG (typ.) + 1.0V] Parameters Sym Min Typ Max Units tSTART — — 5 ms VDD Low-to-High tDELAY — — 1 ms VBAT < VPTH to VBAT > VPTH Current Rise Time Out of Preconditioning tRISE — — 1 ms IOUT Rising to 90% of IREG Fast Charge Safety Timer Period tFAST 1.1 1.5 1.9 Hours CTIMER = 0.1 µF tPRECON 45 60 75 Minutes CTIMER = 0.1 µF tTERM 2.2 3 3.8 Hours CTIMER = 0.1 µF Status Output turn-off tOFF — — 200 µs ISINK = 1 mA to 0 mA Status Output turn-on tON — — 200 µs ISINK = 0 mA to 1 mA UVLO Start Delay Conditions Current Regulation Transition Time Out of Preconditioning Preconditioning Current Regulation Preconditioning Charge Safety Timer Period Charge Termination Elapsed Time Termination Period Status Indicators TEMPERATURE SPECIFICATIONS Electrical Specifications: Unless otherwise indicated, all limits apply for VDD = [VREG (typ.) + 0.3V] to 12V. Typical values are at +25°C, VDD = [VREG (typ.) + 1.0V] Parameters Sym Min Typ Max Units Specified Temperature Range TA -40 Operating Temperature Range TJ -40 Storage Temperature Range TA Thermal Resistance, 16-lead, 4 mm x 4 mm QFN Thermal Resistance, 16-lead SOIC Conditions — +85 °C — +125 °C -65 — +150 °C θJA — 37 — °C/W 4-Layer JC51-7 Standard Board, Natural Convection θJA — 74 — °C/W 4-Layer JC51-7 Standard Board, Natural Convection Temperature Ranges Thermal Package Resistances © 2005 Microchip Technology Inc. DS21893C-page 5 MCP73861/2/3/4 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. 4.207 MCP73861/3 VSET = VDD VDD = 5.2V 4.205 4.203 4.201 4.199 4.197 4.195 1.00 Supply Current (mA) Battery Regulation Voltage (V) NOTE: Unless otherwise indicated, VDD = [VREG(typ.) + 1V], IOUT = 10 mA and TA= +25°C, Constant-voltage mode. MCP73861/3 VSET = VDD VDD = 5.2V 0.90 0.80 0.70 0.60 0.50 0.40 4.193 10 100 10 1000 100 Charge Current (mA) Charge Current (mA) MCP73861/3 VSET = VDD IOUT = 1000 mA 4.30 4.20 4.10 4.00 3.90 FIGURE 2-4: Supply Current (ISS) vs. Charge Current (IOUT). 1.60 Supply Current (mA) Battery Regulation Voltage (V) FIGURE 2-1: Battery Regulation Voltage (VBAT) vs. Charge Current (IOUT). 4.40 MCP73861/3 VSET = VDD IOUT = 1000 mA 1.40 1.20 1.00 0.80 0.60 0.40 3.80 4.5 6.0 7.5 9.0 10.5 4.5 12.0 6.0 FIGURE 2-2: Battery Regulation Voltage (VBAT) vs. Supply Voltage (VDD). 10.5 12.0 1.00 MCP73861/3 VSET = VDD IOUT = 10 mA Supply Current (mA) 4.203 9.0 FIGURE 2-5: Supply Current (ISS) vs. Supply Voltage (VDD). 4.207 4.205 7.5 Supply Voltage (V) Supply Voltage (V) Battery Regulation Voltage (V) 1000 4.201 4.199 4.197 4.195 MCP73861/3 VSET = VDD IOUT = 10 mA 0.90 0.80 0.70 0.60 0.50 0.40 4.193 4.5 6.0 7.5 9.0 10.5 12.0 Supply Voltage (V) FIGURE 2-3: Battery Regulation Voltage (VBAT) vs. Supply Voltage (VDD). DS21893C-page 6 4.5 6.0 7.5 9.0 10.5 12.0 Supply Voltage (V) FIGURE 2-6: Supply Current (ISS) vs. Supply Voltage (VDD). © 2005 Microchip Technology Inc. MCP73861/2/3/4 TYPICAL PERFORMANCE CURVES (CONTINUED) 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 1.60 MCP73861/3 VSET = VDD VDD = VSS +85°C +25°C -40°C Supply Current (mA) MCP73861/3 VSET = VDD IOUT = 10 mA 1.40 1.20 1.00 0.80 0.60 Therm. Bias Current (µA) FIGURE 2-9: Thermistor Reference Voltage (VTHREF) vs. Thermistor Bias Current (ITHREF). © 2005 Microchip Technology Inc. 80 70 60 40 30 50 80 70 60 50 40 2.500 80 100 125 150 175 200 70 75 60 50 50 2.500 2.505 40 2.505 2.510 -20 2.510 2.515 MCP73861/3 VSET = VDD ITHREF = 100 µA -30 2.515 2.520 -40 MCP73861/3 VSET = VDD 25 FIGURE 2-11: Battery Regulation Voltage (VBAT) vs. Ambient Temperature (TA). Therm. Reference Voltage (V) Therm. Reference Voltage (V) 2.520 0 20 Ambient Temperature (°C) Supply Voltage (V) FIGURE 2-8: Thermistor Reference Voltage (VTHREF) vs. Supply Voltage (VDD). 30 4.193 12.0 20 10.5 4.195 30 9.0 4.197 20 7.5 4.199 10 2.500 4.201 10 2.510 4.203 0 2.520 MCP73861/3 VSET = VDD IOUT = 10 mA 4.205 -20 2.530 4.207 -30 MCP73861/3 VSET = VDD ITHREF = 100 µA -40 2.550 6.0 FIGURE 2-10: Supply Current (ISS) vs. Ambient Temperature (TA). Battery Regulation Voltage (V) Therm. Reference Voltage (V) FIGURE 2-7: Output Leakage Current (IDISCHARGE) vs. Battery Regulation Voltage (VBAT). 4.5 0 Ambient Temperature (°C) Battery Regulation Voltage (V) 2.540 10 4.4 -10 4.0 0 3.6 -20 3.2 -10 2.8 -10 2.4 -30 0.40 2.0 -40 Output Leakage Current (µA) NOTE: Unless otherwise indicated, VDD = [VREG(typ.) + 1V], IOUT = 10 mA and TA= +25°C, Constant-voltage mode. Ambient Temperature (°C) FIGURE 2-12: Thermistor Reference Voltage (VTHREF) vs. Ambient Temperature (TA). DS21893C-page 7 MCP73861/2/3/4 TYPICAL PERFORMANCE CURVES (CONTINUED) 1.00 8.407 MCP73862/4 VSET = VDD VDD = 9.4V 8.405 Supply Current (mA) Battery Regulation Voltage (V) NOTE: Unless otherwise indicated, VDD = [VREG(typ.) + 1V], IOUT = 10 mA and TA= +25°C, Constant-voltage mode. 8.403 8.401 8.399 8.397 8.395 0.90 MCP73862/4 VSET = VDD VDD = 9.4V 0.80 0.70 0.60 0.50 0.40 8.393 10 100 10 1000 100 Charge Current (mA) Charge Current (mA) FIGURE 2-16: Supply Current (ISS) vs. Charge Current (IOUT). 8.407 1.60 8.405 1.40 8.401 Supply Current (mA) Battery Regulation Voltage (V) FIGURE 2-13: Battery Regulation Voltage (VBAT) vs. Charge Current (IOUT). 8.403 MCP73862/4 VSET = VDD IOUT = 1000 mA 8.399 8.397 8.395 8.393 10.0 MCP73862/4 VSET = VDD IOUT = 1000 mA 1.20 1.00 0.80 0.60 0.40 10.4 10.8 11.2 11.6 12.0 9.0 9.5 FIGURE 2-14: Battery Regulation Voltage (VBAT) vs. Supply Voltage (VDD). 10.5 11.0 11.5 12.0 FIGURE 2-17: Supply Current (ISS) vs. Supply Voltage (VDD). 1.00 MCP73862/4 8.410 VSET = VDD Supply Current (mA) Battery Regulation Voltage (V) 10.0 Supply Voltage (V) Supply Voltage (V) 8.412 1000 IOUT = 10 mA 8.408 8.406 8.404 8.402 8.400 0.90 MCP73862/4 VSET = VDD IOUT = 10 mA 0.80 0.70 0.60 0.50 0.40 8.398 9.0 9.5 10.0 10.5 11.0 11.5 12.0 Supply Voltage (V) FIGURE 2-15: Battery Regulation Voltage (VBAT) vs. Supply Voltage (VDD). DS21893C-page 8 9.0 9.5 10.0 10.5 11.0 11.5 12.0 Supply Voltage (V) FIGURE 2-18: Supply Current (ISS) vs. Supply Voltage (VDD). © 2005 Microchip Technology Inc. MCP73861/2/3/4 TYPICAL PERFORMANCE CURVES (CONTINUED) 1.60 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 MCP73862/4 VSET = VDD VDD = VSS +85°C +25°C -40°C Supply Current (mA) MCP73862/4 VSET = VDD IOUT = 10 mA 1.40 1.20 1.00 0.80 0.60 75 100 125 150 175 200 Thermistor Bias Current (µA) FIGURE 2-21: Thermistor Reference Voltage (VTHREF) vs. Thermistor Bias Current (ITHREF). © 2005 Microchip Technology Inc. 80 70 60 50 40 30 80 70 60 50 40 2.530 80 50 70 25 60 0 2.534 50 2.540 2.538 40 2.542 2.542 -20 2.544 MCP73862/4 VSET = VDD ITHREF = 100 µA 2.546 -30 2.546 2.550 -40 MCP73862/4 VSET = VDD 2.548 FIGURE 2-23: Battery Regulation Voltage (VBAT) vs. Ambient Temperature (TA). Therm. Reference Voltage (V) Therm. Reference Voltage (V) FIGURE 2-20: Thermistor Reference Voltage (VTHREF) vs. Supply Voltage (VDD). 30 Ambient Temperature (°C) Supply Voltage (V) 2.550 20 8.386 12.0 30 11.5 20 11.0 8.390 10 10.5 8.394 20 10.0 8.398 10 9.5 8.402 0 2.530 8.406 0 2.540 MCP73862/4 VSET = VDD IOUT = 10 mA 8.410 -30 2.550 8.414 -40 MCP73862/4 VSET = VDD ITHREF = 100 µA 9.0 FIGURE 2-22: Supply Current (ISS) vs. Ambient Temperature (TA). Battery Regulation Voltage (V) Therm. Reference Voltage (V) FIGURE 2-19: Output Leakage Current (IDISCHARGE) vs. Battery Regulation Voltage (VBAT). 2.560 0 Ambient Temperature (°C) Battery Regulation Voltage (V) 2.570 10 8.8 -10 8.0 -10 7.2 -10 6.4 -20 5.6 -20 4.8 -30 0.40 4.0 -40 Output Leakage Current (µA) NOTE: Unless otherwise indicated, VDD = [VREG(typ.) + 1V], IOUT = 10 mA and TA= +25°C, Constant-voltage mode. Ambient Temperature (°C) FIGURE 2-24: Thermistor Reference Voltage (VTHREF) vs. Ambient Temperature (TA). DS21893C-page 9 MCP73861/2/3/4 TYPICAL PERFORMANCE CURVES (CONTINUED) NOTE: Unless otherwise indicated, VDD = [VREG(typ.) + 1V], IOUT = 10 mA and TA= +25°C, Constant-voltage mode. VDD VDD VBAT VBAT MCP73861 VDD Stepped from 5.2V to 6.2V IOUT = 500 mA COUT = 10 µF, X7R, Ceramic MCP73861 VDD Stepped from 5.2V to 6.2V IOUT = 10 mA COUT = 10 µF, X7R, Ceramic FIGURE 2-25: Line Transient Response. MCP73861 VDD 5.2V COUT = 10 µF, X7R, Ceramic FIGURE 2-28: MCP73861 VDD 5.2V COUT = 10 µF, X7R, Ceramic VBAT 100 mA Line Transient Response. IOUT 500 mA 10 mA FIGURE 2-26: 0 Load Transient Response. FIGURE 2-29: -10 VAC = 100 mVp-p IOUT = 10 mA COUT = 10 μF, Ceramic -40 -50 -60 -70 -80 0.01 Load Transient Response. 0 MCP73861 Attenuation (dB) Attenuation (dB) -30 -20 -30 -40 MCP73861 VDD = 5.2V VAC = 100 mVp-p IOUT = 100 mA COUT = 10 μF, X7R, Ceramic -50 -60 -70 0.1 1 10 100 1000 -80 0.01 Frequency (kHz) FIGURE 2-27: Rejection. DS21893C-page 10 IOUT 10 mA -10 VDD = 5.2V -20 VBAT Power Supply Ripple 0.1 1 10 100 1000 Frequency (kHz) FIGURE 2-30: Rejection. Power Supply Ripple © 2005 Microchip Technology Inc. MCP73861/2/3/4 TYPICAL PERFORMANCE CURVES (CONTINUED) NOTE: Unless otherwise indicated, VDD = [VREG(typ.) + 1V], IOUT = 10 mA and TA= +25°C, Constant-voltage mode. 800 600 400 200 501 499 497 495 Programming Resistor (:) FIGURE 2-31: Charge Current (IOUT) vs. Programming Resistor (RPROG). © 2005 Microchip Technology Inc. 80 70 60 50 40 30 20 0 0 10 536 -10 1.6k -20 493 4.8k -30 0 OPEN MCP73861/2/3/4 VSET = VDD RPROG = 1.6 k: 503 -40 1000 505 MCP73861/2/3/4 VSET = VDD Charge Current (μA) Charge Current (mA) 1200 Ambient Temperature (°C) FIGURE 2-32: Charge Current (IOUT) vs. Ambient Temperature (TA). DS21893C-page 11 MCP73861/2/3/4 3.0 PIN DESCRIPTION The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION TABLES Pin No. Symbol Function QFN SOIC 1 3 VSET Voltage Regulation Selection 2 4 VDD1 Battery Management Input Supply 3 5 VDD2 Battery Management Input Supply 4 6 VSS1 Battery Management 0V Reference 5 7 PROG 6 8 THREF Cell Temperature Sensor Bias 7 9 THERM Cell Temperature Sensor Input 8 10 TIMER Timer Set 9 11 VSS3 Battery Management 0V Reference 10 12 VBAT1 Battery Charge Control Output 11 13 VBAT2 Battery Charge Control Output 12 14 VBAT3 Battery Voltage Sense 13 15 VSS2 Battery Management 0V Reference 14 16 EN 15 1 STAT2 Fault Status Output 16 2 STAT1 Charge Status Output 3.1 Current Regulation Set Logic Enable Voltage Regulation Selection (VSET) MCP73861/3: Connect VSET to VSS for 4.1V regulation voltage, connect to VDD for 4.2V regulation voltage. MCP73862/4: Connect VSET to VSS for 8.2V regulation voltage, connect to VDD for 8.4V regulation voltage. 3.2 Battery Management Input Supply (VDD2, VDD1) A supply voltage of [VREG (typ.) + 0.3V] to 12V is recommended. Bypass to VSS with a minimum of 4.7 µF. 3.3 Battery Management 0V Reference (VSS1, VSS2, VSS3) Connect to negative terminal of battery and input supply. 3.4 Current Regulation Set (PROG) Preconditioning, fast and termination currents are scaled by placing a resistor from PROG to VSS. 3.5 Cell Temperature Sensor Bias (THREF) THREF is a voltage reference to bias external thermistor for continuous cell temperature monitoring and prequalification. 3.6 Cell Temperature Sensor Input (THERM) 3.7 Timer Set All safety timers are scaled by CTIMER/0.1 µF. 3.8 Battery Charge Control Output (VBAT1, VBAT2) Connect to positive terminal of battery. Drain terminal of internal P-channel MOSFET pass transistor. Bypass to VSS with a minimum of 4.7 µF to ensure loop stability when the battery is disconnected. 3.9 Battery Voltage Sense (VBAT3) VBAT3 is a voltage sense input. Connect to positive terminal of battery. A precision internal resistor divider regulates the final voltage on this pin to VREG. 3.10 Logic Enable (EN) EN is an input to force charge termination, initiate charge, clear faults or disable automatic recharge. 3.11 Fault Status Output (STAT2) STAT2 is a current-limited, open-drain drive for direct connection to a LED for charge status indication. Alternatively, a pull-up resistor can be applied for interfacing to a host microcontroller. 3.12 Charge Status Output (STAT1) STAT1 is a current-limited, open-drain drive for direct connection to a LED for charge status indication. Alternatively, a pull-up resistor can be applied for interfacing to a host microcontroller. THERM is an input for an external thermistor for continuous cell-temperature monitoring and prequalification. Connect to THREF/3 to disable temperature sensing. DS21893C-page 12 © 2005 Microchip Technology Inc. MCP73861/2/3/4 DEVICE OVERVIEW The MCP7386X family of devices are highly advanced linear charge management controllers. Refer to the functional block diagram. Figure 4-2 depicts the operational flow algorithm from charge initiation to completion and automatic recharge. 4.1 Charge Qualification and Preconditioning Upon insertion of a battery, or application of an external supply, the MCP7386X family of devices automatically performs a series of safety checks to qualify the charge. The input source voltage must be above the Undervoltage Lockout (UVLO) threshold, the enable pin must be above the logic-high level and the cell temperature must be within the upper and lower thresholds. The qualification parameters are continuously monitored. Deviation beyond the limits automatically suspends or terminates the charge cycle. The input voltage must deviate below the UVLO stop threshold for at least one clock period to be considered valid. Once the qualification parameters have been met, the MCP7386X initiates a charge cycle. The charge status output is pulled low throughout the charge cycle (see Table 5-1 for charge status outputs). If the battery voltage is below the preconditioning threshold (VPTH), the MCP7386X preconditions the battery with a tricklecharge. The preconditioning current is set to approximately 10% of the fast charge regulation current. The preconditioning trickle-charge safely replenishes deeply depleted cells and minimizes heat dissipation during the initial charge cycle. If the battery voltage has not exceeded the preconditioning threshold before the preconditioning timer has expired, a fault is indicated and the charge cycle is terminated. 4.2 Constant Current Regulation – Fast Charge MCP73862/4 regulate to 4.1V and 8.2V, respectively. With VSET tied to VDD, the MCP73861/3 and MCP73862/4 regulate to 4.2V and 8.4V, respectively. 4.4 Charge Cycle Completion and Automatic Re-Charge The MCP7386X monitors the charging current during the Constant-voltage regulation mode. The charge cycle is considered complete when the charge current has diminished below approximately 8% of the regulation current (IREG), or the elapsed timer has expired. The MCP7386X automatically begins a new charge cycle when the battery voltage falls below the recharge threshold (VRTH), assuming all the qualification parameters are met. 4.5 Thermal Regulation The MCP7386X family limits the charge current based on the die temperature. Thermal regulation optimizes the charge cycle time while maintaining device reliability. If thermal regulation is entered, the timer is automatically slowed down to ensure that a charge cycle will not terminate prematurely. Figure 4-1 depicts the thermal regulation profile. 1400 Maximum Charge Current (mA) 4.0 1200 1000 800 Maximum Minimum 600 400 200 0 0 20 40 60 80 100 120 140 Die Temperature (° C) Preconditioning ends, and fast charging begins, when the battery voltage exceeds the preconditioning threshold. Fast charge regulates to a constant current (IREG), which is set via an external resistor connected to the PROG pin. Fast charge continues until the battery voltage reaches the regulation voltage (VREG), or the fast charge timer expires; in which case, a fault is indicated and the charge cycle is terminated. 4.3 Constant Voltage Regulation When the battery voltage reaches the regulation voltage (VREG), constant voltage regulation begins. The MCP7386X monitors the battery voltage at the VBAT pin. This input is tied directly to the positive terminal of the battery. The MCP7386X selects the voltage regulation value based on the state of VSET. With VSET tied to VSS, the MCP73861/3 and © 2005 Microchip Technology Inc. FIGURE 4-1: Typical Maximum Charge Current vs. Die Temperature. 4.6 Thermal Shutdown The MCP7386X family suspends charge if the die temperature exceeds 155°C. Charging will resume when the die temperature has cooled by approximately 10°C. The thermal shutdown is a secondary safety feature in the event that there is a failure within the thermal regulation circuitry. DS21893C-page 13 FIGURE 4-2: DS21893C-page 14 Yes Yes Yes VDD < VUVLO or EN Low Yes Yes Note 2 Note 1 Note 1 No STAT1 = Off STAT2 = On Fault Charge Current = 0 Reset Safety Timer No Yes STAT1 = Off STAT2 = Flashing Safety Timer Suspended Charge Current = 0 Temperature OK No Safety Timer Expired No VBAT > VPTH No The charge current will be scaled based on the die temperature during thermal regulation. Refer to Section 4.5, “Thermal Regulation”, for details. The qualification parameters are continuously monitored throughout the charge cycle. Refer to Section 4.1, “Charge Qualification and Preconditioning”, for details. Preconditioning Mode Charge Current = IPREG Reset Safety Timer Note 2: Note 1: Yes Yes STAT1 = On STAT2 = Off Yes Yes VDD < VUVLO VBAT < VRTH or EN Low No STAT1 = Flashing (MCP73861/2) STAT1 = Off (MCP73863/4) STAT2 = Off (All Devices) Charge Termination Charge Current = 0 Reset Safety Timer No STAT1 = Flashing Safety Timer Suspended Charge Current = 0 Temperature OK No IOUT < ITERM Elapsed Timer Expired Constant-Voltage Mode Output Voltage = VREG No STAT1 = Off STAT2 = Flashing Charge Current = 0 No STAT1 = Off STAT2 = Off No STAT1 = Off STAT2 = Flashing Safety Timer Suspended Charge Current = 0 Temperature OK No Safety Timer Expired No VBAT = VREG Constant-Current Mode Charge Current = IREG Reset Safety Timer Yes VBAT > VPTH Yes Temperature OK Yes VDD > VUVLO EN High Initialize MCP73861/2/3/4 Operational Flow Algorithm. © 2005 Microchip Technology Inc. MCP73861/2/3/4 5.0 DETAILED DESCRIPTION 5.1 Analog Circuitry 5.1.1 BATTERY MANAGEMENT INPUT SUPPLY (VDD1, VDD2) Figure 6-1 depicts a typical application circuit with connection of the THERM input. The resistor values of RT1 and RT2 are calculated with the following equations. For NTC thermistors: 2 × RCOLD × RHOT R T1 = ---------------------------------------------RCOLD – RHOT The VDD input is the input supply to the MCP7386X. The MCP7386X automatically enters a Power-down mode if the voltage on the VDD input falls below the UVLO voltage (VSTOP). This feature prevents draining the battery pack when the VDD supply is not present. 5.1.2 PROG INPUT Fast charge current regulation can be scaled by placing a programming resistor (RPROG) from the PROG input to VSS. Connecting the PROG input to VSS allows for a maximum fast charge current of 1.2A, typically. The minimum fast charge current is 100 mA, set by letting the PROG input float. The following formula calculates the value for RPROG: 13.2 – 11 × I REG R PROG = ---------------------------------------12 × I REG – 1.2 where: IREG = the desired fast charge current in amps. RPROG = measured in kΩ. The preconditioning trickle-charge current and the charge termination current are scaled to approximately 10% and 8% of IREG, respectively. 5.1.3 CELL TEMPERATURE SENSOR BIAS (THREF) A 2.5V voltage reference is provided to bias an external thermistor for continuous cell temperature monitoring and prequalification. A ratio metric window comparison is performed at threshold levels of VTHREF/2 and VTHREF/4. 5.1.4 CELL TEMPERATURE SENSOR INPUT (THERM) The MCP73861/2/3/4 continuously monitors temperature by comparing the voltage between the THERM input and VSS with the upper and lower temperature thresholds. A negative or positive temperature coefficient, NTC or PTC thermistor and an external voltage-divider typically develop this voltage. The temperature sensing circuit has its own reference to which it performs a ratio metric comparison. Therefore, it is immune to fluctuations in the supply input (VDD). The temperature-sensing circuit is removed from the system when VDD is not applied, eliminating additional discharge of the battery pack. 2 × RCOLD × RHOT R T2 = ---------------------------------------------RCOLD – 3 × RHOT For PTC thermistors: 2 × RCOLD × RHOT R T1 = ---------------------------------------------RHOT – RCOLD 2 × RCOLD × RHOT R T2 = ---------------------------------------------RHOT – 3 × RCOLD Where: RCOLD and RHOT are the thermistor resistance values at the temperature window of interest. Applying a voltage equal to VTHREF/3 to the THERM input disables temperature monitoring. 5.1.5 TIMER SET INPUT (TIMER) The TIMER input programs the period of the safety timers by placing a timing capacitor (CTIMER) between the TIMER input pin and VSS. Three safety timers are programmed via the timing capacitor. The preconditioning safety timer period: C TIMER tPRECON = ------------------- × 1.0Hour s 0.1μF The fast charge safety timer period: C TIMER t FAST = ------------------- × 1.5Hours 0.1μF The elapsed time termination period: C TIMER t TERM = ------------------- × 3.0Hours 0.1μF The preconditioning timer starts after qualification and resets when the charge cycle transitions to the fast charge, Constant-current mode. The fast charge timer and the elapsed timer start once the MCP7386X transitions from preconditioning. The fast charge timer resets when the charge cycle transitions to the Constant-voltage mode. The elapsed timer will expire and terminate the charge if the sensed current does not diminish below the termination threshold. During thermal regulation, the timer is slowed down proportional to the charge current. © 2005 Microchip Technology Inc. DS21893C-page 15 MCP73861/2/3/4 5.1.6 BATTERY VOLTAGE SENSE (VBAT3) The MCP7386X monitors the battery voltage at the VBAT3 pin. This input is tied directly to the positive terminal of the battery pack. 5.1.7 BATTERY CHARGE CONTROL OUTPUT (VBAT1, VBAT2) The battery charge control output is the drain terminal of an internal P-channel MOSFET. The MCP7386X provides constant current and voltage regulation to the battery pack by controlling this MOSFET in the linear region. The battery charge control output should be connected to the positive terminal of the battery pack. 5.2 Digital Circuitry 5.2.1 CHARGE STATUS OUTPUTS (STAT1,STAT2) Two status outputs provide information on the state of charge. The current-limited, open-drain outputs can be used to illuminate external LEDs. Optionally, a pull-up resistor can be used on the output for communication with a host microcontroller. Table 5-1 summarizes the state of the status outputs during a charge cycle. TABLE 5-1: CHARGE CYCLE STAT1 STATUS OUTPUTS (NOTE) STAT1 STAT2 Qualification Off Off Preconditioning On Off ConstantCurrent Fast Charge On Off ConstantVoltage On Off Charge Complete Flashing (1 Hz, 50% duty cycle) (MCP73861/2) Off (MCP73863/4) During a fault condition, the STAT1 status output will be off and the STAT2 status output will be on. To recover from a fault condition, the input voltage must be removed and then reapplied, or the enable input (EN) must be de-asserted to a logic-low, then asserted to a logic-high. When the voltage on the THERM input is outside the preset window, the charge cycle will not start, or will be suspended. The charge cycle is not terminated and recovery is automatic. The charge cycle will resume (or start) once the THERM input is valid and all other qualification parameters are met. During an invalid THERM condition, the STAT1 status output will be off and the STAT2 status output will flash. 5.2.2 VSET INPUT The VSET input selects the regulated output voltage of the MCP7386X. With VSET tied to VSS, the MCP73861/3 and MCP73862/4 regulate to 4.1V and 8.2V, respectively. With VSET tied to VDD, the MCP73861/3 and MCP73862/4 regulate to 4.2V and 8.4V, respectively. 5.2.3 LOGIC ENABLE (EN) The logic enable input pin (EN) can be used to terminate a charge at any time during the charge cycle, as well as to initiate a charge cycle or initiate a recharge cycle. Applying a logic-high input signal to the EN pin, or tying it to the input source, enables the device. Applying a logic-low input signal disables the device and terminates a charge cycle. When disabled, the device’s supply current is reduced to 0.17 µA, typically. Off (All Devices) Fault Off On THERM Invalid Off Flashing (1 Hz, 50% duty cycle) Disabled – Sleep mode Off Off Input Voltage Disconnected Off Off Note: The flashing rate (1 Hz) is based off a timer capacitor (CTIMER) of 0.1 µF. The rate will vary based on the value of the timer capacitor. Off state: Open-drain is high-impedance On state: Open-drain can sink current typically 7 mA Flashing: Toggles between off state and on state DS21893C-page 16 © 2005 Microchip Technology Inc. MCP73861/2/3/4 6.0 APPLICATIONS Constant-current followed by Constant-voltage. Figure 6-1 depicts a typical stand-alone application circuit, while Figures 6-2 and 6-3 depict the accompanying charge profile. STAT1 16 VSET VDD1 VDD2 VSS1 15 EN VSS2 14 13 1 12 2 11 MCP73861 3 10 4 9 5 6 THREF PROG RPROG 7 VBAT3 VBAT2 + Single – Lithium-Ion Cell VBAT1 VSS3 8 TIMER CTIMER THERM Unregulated Wall Cube STAT2 The MCP7386X is designed to operate in conjunction with a host microcontroller or in stand-alone applications. The MCP7386X provides the preferred charge algorithm for Lithium-Ion and Lithium-Polymer cells RT1 RT2 FIGURE 6-1: Typical Application Circuit. Constant-Current Mode Preconditioning Mode Constant-Voltage Mode Regulation Voltage (VREG) Regulation Current (IREG) Charge Voltage Transition Threshold (VPTH) Precondition Current (IPREG) Charge Current Termination Current (ITERM) Precondition Safety Timer Fast Charge Safety Timer Elapsed Time Termination Timer FIGURE 6-2: Typical Charge Profile. © 2005 Microchip Technology Inc. DS21893C-page 17 MCP73861/2/3/4 Preconditioning Mode Constant-Current Mode Constant-Voltage Mode Regulation Voltage (VREG) Regulation Current (IREG) Charge Voltage Transition Threshold (VPTH) Precondition Current (IPREG) Termination Current (ITERM) Charge Current Precondition Safety Timer Fast Charge Safety Timer Elapsed Time Termination Timer FIGURE 6-3: 6.1 Typical Charge Profile in Thermal Regulation. Application Circuit Design Due to the low efficiency of linear charging, the most important factors are thermal design and cost, which are a direct function of the input voltage, output current and thermal impedance between the battery charger and the ambient cooling air. The worst-case situation is when the device has transitioned from the Preconditioning mode to the Constant-current mode. In this situation, the battery charger has to dissipate the maximum power. A trade-off must be made between the charge current, cost and thermal requirements of the charger. 6.1.1 COMPONENT SELECTION Selection of the external components in Figure 6-1 is crucial to the integrity and reliability of the charging system. The following discussion is intended as a guide for the component selection process. 6.1.1.1 1200 mA is the maximum charge current obtainable from the MCP7386X. For this situation, the PROG input should be connected directly to VSS. 6.1.1.2 Thermal Considerations The worst-case power dissipation in the battery charger occurs when the input voltage is at the maximum and the device has transitioned from the Preconditioning mode to the Constant-current mode. In this case, the power dissipation is: PowerDissipation = ( V DDMAX – V PTHMIN ) × I REGMAX Where: VDDMAX = the maximum input voltage IREGMAX = the maximum fast charge current VPTHMIN = the minimum transition threshold voltage Current Programming Resistor (RPROG) The preferred fast charge current for Lithium-Ion cells is at the 1C rate, with an absolute maximum current at the 2C rate. For example, a 500 mAh battery pack has a preferred fast charge current of 500 mA. Charging at this rate provides the shortest charge cycle times without degradation to the battery pack performance or life. DS21893C-page 18 © 2005 Microchip Technology Inc. MCP73861/2/3/4 Power dissipation with a 5V, ±10% input voltage source is: PowerDissipation = ( 5.5V – 2.7V ) × 575mA = 1.61W With the battery charger mounted on a 1 in2 pad of 1 oz. copper, the junction temperature rise is 60°C, approximately. This would allow for a maximum operating ambient temperature of 50°C before thermal regulation is entered. 6.1.1.3 6.2 PCB Layout Issues For optimum voltage regulation, place the battery pack as close as possible to the device’s VBAT and VSS pins, recommended to minimize voltage drops along the high current-carrying PCB traces. If the PCB layout is used as a heatsink, adding many vias in the heatsink pad can help conduct more heat to the backplane of the PCB, thus reducing the maximum junction temperature. External Capacitors The MCP7386X is stable with or without a battery load. In order to maintain good AC stability in the Constantvoltage mode, a minimum capacitance of 4.7 µF is recommended to bypass the VBAT pin to VSS. This capacitance provides compensation when there is no battery load. In addition, the battery and interconnections appear inductive at high frequencies. These elements are in the control feedback loop during Constant-voltage mode. Therefore, the bypass capacitance may be necessary to compensate for the inductive nature of the battery pack. Virtually any good quality output filter capacitor can be used, independent of the capacitor’s minimum Effective Series Resistance (ESR) value. The actual value of the capacitor (and its associated ESR) depends on the output load current. A 4.7 µF ceramic, tantalum or aluminum electrolytic capacitor at the output is usually sufficient to ensure stability for up to a 1A output current. 6.1.1.4 Reverse-Blocking Protection The MCP7386X provides protection from a faulted or shorted input, or from a reversed-polarity input source. Without the protection, a faulted or shorted input would discharge the battery pack through the body diode of the internal pass transistor. 6.1.1.5 Enable Interface In the stand-alone configuration, the enable pin is generally tied to the input voltage. The MCP7386X automatically enters a Low-power mode when voltage on the VDD input falls below the UVLO voltage (VSTOP), reducing the battery drain current to 0.23 µA, typically. 6.1.1.6 Charge Status Interface Two status outputs provide information on the state of charge. The current-limited, open-drain outputs can be used to illuminate external LEDs. Refer to Table 5-1 for a summary of the state of the status outputs during a charge cycle. © 2005 Microchip Technology Inc. DS21893C-page 19 MCP73861/2/3/4 7.0 PACKAGING INFORMATION 7.1 Package Marking Information Example: 16-Lead QFN* 16 15 14 13 1 2 3 4 16 12 XXXXXXXX XXXXXXXX YYWW NNN 5 6 7 11 2 10 3 9 4 8 XXXXXXXXXXXXX XXXXXXXXXXXXX YYWWNNN Legend: XX...X Y YY WW NNN e3 * Note: DS21893C-page 20 14 13 12 73861 I/ML 0532 256 5 16-Lead SOIC (150 mil) 15 1 6 7 11 10 9 8 Example: MCP73861 e3 I/SL^^ 0532256 Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. © 2005 Microchip Technology Inc. MCP73861/2/3/4 16-Lead Plastic Quad Flat No-Lead Package (ML) 4x4x0.9 mm Body (QFN) – Saw Singulated D D2 EXPOSED METAL PAD (NOTE 2) e E2 E 2 b 1 n OPTIONAL INDEX AREA (NOTE 1) TOP VIEW L BOTTOM VIEW A3 A A1 INCHES Units MIN Dimension Limits NOM MILLIMETERS* MAX MIN NOM MAX Number of Pins n Pitch e Overall Height A .031 .035 .039 0.80 0.90 1.00 Standoff A1 .000 .001 .002 0.00 0.02 0.05 Contact Thickness A3 Overall Width Exposed Pad Width Overall Length 16 16 0.65 BSC .026 BSC .008 REF 0.20 REF E .152 .157 .163 3.85 4.00 E2 .090 .104 .106 2.29 2.64 2.69 D .152 .157 .163 3.85 4.00 4.15 4.15 D2 .090 .104 .106 2.29 2.64 2.69 Contact Width b .010 .012 .014 0.25 0.30 0.35 Contact Length L .012 .016 .020 0.30 0.40 0.50 Exposed Pad Length * Controlling Parameter Notes: 1. Pin 1 visual index feature may vary, but must be located within the hatched area. 2. Exposed pad varies according to die attach paddle size. BSC: Basic Dimension. Theoretically exact value shown without tolerances. See ASME Y14.5M REF: Reference Dimension, usually without tolerance, for information purposes only. See ASME Y14.5M JEDEC equivalent: M0-220 Drawing No. C04-127 © 2005 Microchip Technology Inc. Revised 07-21-05 DS21893C-page 21 MCP73861/2/3/4 16-Lead Plastic Small Outline (SL) – Narrow 150 mil Body (SOIC) E E1 p D 2 B n 1 α h 45° c A2 A φ L A1 β Units Dimension Limits n p INCHES* NOM 16 .050 .053 .061 .052 .057 .004 .007 .228 .237 .150 .154 .386 .390 .010 .015 .016 .033 0 4 .008 .009 .013 .017 0 12 0 12 MAX MILLIMETERS NOM 16 1.27 1.35 1.55 1.32 1.44 0.10 0.18 5.79 6.02 3.81 3.90 9.80 9.91 0.25 0.38 0.41 0.84 0 4 0.20 0.23 0.33 0.42 0 12 0 12 MAX Number of Pins Pitch Overall Height A .069 1.75 Molded Package Thickness A2 .061 1.55 Standoff § A1 .010 0.25 Overall Width E .244 6.20 Molded Package Width E1 .157 3.99 Overall Length D .394 10.01 Chamfer Distance h .020 0.51 Foot Length L .050 1.27 φ Foot Angle 8 8 c Lead Thickness .010 0.25 Lead Width B .020 0.51 α Mold Draft Angle Top 15 15 β Mold Draft Angle Bottom 15 15 * Controlling Parameter § Significant Characteristic Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side. JEDEC Equivalent: MS-012 Drawing No. C04-108 DS21893C-page 22 MIN MIN © 2005 Microchip Technology Inc. MCP73861/2/3/4 APPENDIX A: REVISION HISTORY Revision C (August 2005) The following is the list of modifications: 1. 2. 3. Added MCP73863 and MCP73864 devices throughout data sheet. Added Appendix A: Revision History. Updated QFN and SOIC package diagrams. Revision B (December 2004) • Added SOIC package throughout data sheet. Revision A (June 2004) • Original Release of this Document. © 2005 Microchip Technology Inc. DS21893C-page 23 MCP73861/2/3/4 NOTES: DS21893C-page 24 © 2005 Microchip Technology Inc. MCP73861/2/3/4 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. X XX Device Temperature Range Package Device MCP73861: MCP73861T: MCP73862: MCP73862T: MCP73863: MCP73863T: MCP73864: MCP73864T: Temperature Range I Packages ML Examples: a) b) Single-Cell Charge Controller with Temperature Monitor Single-Cell Charge Controller with Temperature Monitor, Tape and Reel Dual Series Cells Charge Controller with Temperature Monitor Dual Series Cells Charge Controller with Temperature Monitor, Tape and Reel Single-cell Charge Controller with Temperature Monitor Single-Cell Charge Controller with Temperature Monitor, Tape and Reel Dual Series Cells Charge Controller with Temperature Monitor Dual Series Cells Charge Controller with Temperature Monitor, Tape and Reel = -40°C to +85°C (Industrial) c) d) a) b) c) d) a) b) SL = Plastic Quad Flat No Lead, 4x4 mm Body (QFN), 16-lead = Plastic Small Outline, 150 mm Body (SOIC), 16-lead c) d) a) b) c) d) © 2005 Microchip Technology Inc. MCP73861-I/ML: Single-Cell Controller 16LD-QFN package. MCP73861T-I/ML: Tape and Reel, Single-Cell Controller 16LD-QFN package. MCP73861-I/SL: Single-Cell Controller 16LD-SOIC package. MCP73861T-I/SL: Tape and Reel, Single-Cell Controller 16LD-SOIC package. MCP73862-I/ML: Dual-Cell Controller 16LD-QFN package. MCP73862T-I/ML: Tape and Reel, Dual-Cell Controller 16LD-QFN package. MCP73862-I/SL: Dual-Cell Controller 16LD-SOIC package. MCP73862T-I/SL: Tape and Reel, Dual-Cell Controller 16LD-SOIC package. MCP73863-I/ML: Single-Cell Controller 16LD-QFN package. MCP73863T-I/ML: Tape and Reel, Single-Cell Controller 16LD-QFN package. MCP73863-I/SL: Single-Cell Controller 16LD-SOIC package. MCP73863T-I/SL: Tape and Reel, Single-Cell Controller 16LD-SOIC package. MCP73864-I/ML: Dual-Cell Controller 16LD-QFN package. MCP73864T-I/ML: Tape and Reel, Dual-Cell Controller 16LD-QFN package. MCP73864-I/SL: Dual-Cell Controller 16LD-SOIC package. MCP73864T-I/SL: Tape and Reel, Dual-Cell Controller 16LD-SOIC package. DS21893C-page 25 MCP73861/2/3/4 NOTES: DS21893C-page 26 © 2005 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip’s products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, Accuron, dsPIC, KEELOQ, microID, MPLAB, PIC, PICmicro, PICSTART, PRO MATE, PowerSmart, rfPIC, and SmartShunt are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. AmpLab, FilterLab, Migratable Memory, MXDEV, MXLAB, PICMASTER, SEEVAL, SmartSensor and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Analog-for-the-Digital Age, Application Maestro, dsPICDEM, dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, Linear Active Thermistor, MPASM, MPLIB, MPLINK, MPSIM, PICkit, PICDEM, PICDEM.net, PICLAB, PICtail, PowerCal, PowerInfo, PowerMate, PowerTool, rfLAB, rfPICDEM, Select Mode, Smart Serial, SmartTel, Total Endurance and WiperLock are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. © 2005, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Microchip received ISO/TS-16949:2002 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona and Mountain View, California in October 2003. The Company’s quality system processes and procedures are for its PICmicro® 8-bit MCUs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. © 2005 Microchip Technology Inc. DS21893C-page 27 WORLDWIDE SALES AND SERVICE AMERICAS ASIA/PACIFIC ASIA/PACIFIC EUROPE Corporate Office 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7200 Fax: 480-792-7277 Technical Support: http://support.microchip.com Web Address: www.microchip.com Australia - Sydney Tel: 61-2-9868-6733 Fax: 61-2-9868-6755 India - Bangalore Tel: 91-80-2229-0061 Fax: 91-80-2229-0062 China - Beijing Tel: 86-10-8528-2100 Fax: 86-10-8528-2104 India - New Delhi Tel: 91-11-5160-8631 Fax: 91-11-5160-8632 Austria - Weis Tel: 43-7242-2244-399 Fax: 43-7242-2244-393 Denmark - Copenhagen Tel: 45-4450-2828 Fax: 45-4485-2829 China - Chengdu Tel: 86-28-8676-6200 Fax: 86-28-8676-6599 India - Pune Tel: 91-20-2566-1512 Fax: 91-20-2566-1513 France - Paris Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79 China - Fuzhou Tel: 86-591-8750-3506 Fax: 86-591-8750-3521 Japan - Yokohama Tel: 81-45-471- 6166 Fax: 81-45-471-6122 Germany - Munich Tel: 49-89-627-144-0 Fax: 49-89-627-144-44 China - Hong Kong SAR Tel: 852-2401-1200 Fax: 852-2401-3431 Korea - Gumi Tel: 82-54-473-4301 Fax: 82-54-473-4302 China - Qingdao Tel: 86-532-8502-7355 Fax: 86-532-8502-7205 Korea - Seoul Tel: 82-2-554-7200 Fax: 82-2-558-5932 or 82-2-558-5934 Atlanta Alpharetta, GA Tel: 770-640-0034 Fax: 770-640-0307 Boston Westborough, MA Tel: 774-760-0087 Fax: 774-760-0088 Chicago Itasca, IL Tel: 630-285-0071 Fax: 630-285-0075 Dallas Addison, TX Tel: 972-818-7423 Fax: 972-818-2924 Detroit Farmington Hills, MI Tel: 248-538-2250 Fax: 248-538-2260 Kokomo Kokomo, IN Tel: 765-864-8360 Fax: 765-864-8387 Los Angeles Mission Viejo, CA Tel: 949-462-9523 Fax: 949-462-9608 San Jose Mountain View, CA Tel: 650-215-1444 Fax: 650-961-0286 China - Shanghai Tel: 86-21-5407-5533 Fax: 86-21-5407-5066 China - Shenyang Tel: 86-24-2334-2829 Fax: 86-24-2334-2393 China - Shenzhen Tel: 86-755-8203-2660 Fax: 86-755-8203-1760 China - Shunde Tel: 86-757-2839-5507 Fax: 86-757-2839-5571 China - Wuhan Tel: 86-27-5980-5300 Fax: 86-27-5980-5118 China - Xian Tel: 86-29-8833-7250 Fax: 86-29-8833-7256 Malaysia - Penang Tel: 604-646-8870 Fax: 604-646-5086 Philippines - Manila Tel: 632-634-9065 Fax: 632-634-9069 Italy - Milan Tel: 39-0331-742611 Fax: 39-0331-466781 Netherlands - Drunen Tel: 31-416-690399 Fax: 31-416-690340 Spain - Madrid Tel: 34-91-352-30-52 Fax: 34-91-352-11-47 UK - Wokingham Tel: 44-118-921-5869 Fax: 44-118-921-5820 Singapore Tel: 65-6334-8870 Fax: 65-6334-8850 Taiwan - Hsin Chu Tel: 886-3-572-9526 Fax: 886-3-572-6459 Taiwan - Kaohsiung Tel: 886-7-536-4818 Fax: 886-7-536-4803 Taiwan - Taipei Tel: 886-2-2500-6610 Fax: 886-2-2508-0102 Thailand - Bangkok Tel: 66-2-694-1351 Fax: 66-2-694-1350 Toronto Mississauga, Ontario, Canada Tel: 905-673-0699 Fax: 905-673-6509 08/24/05 DS21893C-page 28 © 2005 Microchip Technology Inc.