Freescale Semiconductor Technical Data Document Number: MMG3011NT1 Rev. 5, 3/2008 Heterojunction Bipolar Transistor (InGaP HBT) Broadband High Linearity Amplifier MMG3011NT1 The MMG3011NT1 is a General Purpose Amplifier that is internally input and output matched. It is designed for a broad range of Class A, small - signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 0 to 6000 MHz such as Cellular, P C S , B W A , W L L , P H S , C AT V, V H F, U H F, U M T S a n d g e n e r a l small - signal RF. 0 - 6000 MHz, 15 dB 15 dBm InGaP HBT Features • Frequency: 0 to 6000 MHz • P1dB: 15 dBm @ 900 MHz • Small - Signal Gain: 15 dB @ 900 MHz • Third Order Output Intercept Point: 28 dBm @ 900 MHz • Single 5 Volt Supply • Internally Matched to 50 Ohms • Low Cost SOT - 89 Surface Mount Package • RoHS Compliant • In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. Table 1. Typical Performance (1) Symbol 900 MHz 2140 MHz 3500 MHz Unit Small - Signal Gain (S21) Gp 15 14 12 dB IRL - 18 - 25 - 25 dB Output Return Loss (S22) ORL - 25 - 18 - 17 dB Power Output @1dB Compression P1db 15 13.5 13.5 dBm IP3 28 26.5 26 dBm Third Order Output Intercept Point 3 CASE 1514 - 02, STYLE 1 SOT - 89 PLASTIC Table 2. Maximum Ratings Characteristic Input Return Loss (S11) 12 Rating Symbol Value Unit Supply Voltage VCC 6 V Supply Current ICC 80 mA RF Input Power Pin 10 dBm Tstg - 65 to +150 °C TJ 150 °C Storage Temperature Range Junction Temperature (2) 2. For reliable operation, the junction temperature should not exceed 150°C. 1. VCC = 5 Vdc, TC = 25°C, 50 ohm system Table 3. Thermal Characteristics (VCC = 5 Vdc, ICC = 41 mA, TC = 25°C) Characteristic Thermal Resistance, Junction to Case Symbol Value (3) Unit RθJC 83 °C/W 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2005-2008. All rights reserved. RF Device Data Freescale Semiconductor MMG3011NT1 1 Table 4. Electrical Characteristics (VCC = 5 Vdc, 900 MHz, TC = 25°C, 50 ohm system, in Freescale Application Circuit) Symbol Min Typ Max Unit Small - Signal Gain (S21) Characteristic Gp 13.5 15 — dB Input Return Loss (S11) IRL — - 18 — dB Output Return Loss (S22) ORL — - 25 — dB Power Output @ 1dB Compression P1dB — 15 — dBm Third Order Output Intercept Point IP3 — 28 — dBm Noise Figure NF — 4.6 — dB Supply Current (1) ICC 32 41 48 mA Supply Voltage (1) VCC — 5 — V 1. For reliable operation, the junction temperature should not exceed 150°C. MMG3011NT1 2 RF Device Data Freescale Semiconductor Table 5. Functional Pin Description Pin Number 2 Pin Function 1 RFin 2 Ground 3 RFout/DC Supply 1 2 3 Figure 1. Functional Diagram Table 6. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD 22 - A114) 1A (Minimum) Machine Model (per EIA/JESD 22 - A115) A (Minimum) Charge Device Model (per JESD 22 - C101) IV (Minimum) Table 7. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 1 260 °C MMG3011NT1 RF Device Data Freescale Semiconductor 3 50 OHM TYPICAL CHARACTERISTICS 0 TC = 85°C 25°C −10 15 S11, S22 (dB) Gp, SMALL−SIGNAL GAIN (dB) 20 - 40°C 10 S22 −20 S11 −30 VCC = 5 Vdc ICC = 41 mA VCC = 5 Vdc 5 −40 0 1 2 3 0 4 3 4 Figure 2. Small - Signal Gain (S21) versus Frequency Figure 3. Input/Output Return Loss versus Frequency 17 VCC = 5 Vdc ICC = 41 mA 16 P1dB, 1 dB COMPRESSION POINT (dBm) Gp, SMALL−SIGNAL GAIN (dB) 2 f, FREQUENCY (GHz) 17 900 MHz 15 2140 MHz 1960 MHz 14 13 2600 MHz 12 3500 MHz 11 10 16 15 14 13 12 VCC = 5 Vdc ICC = 41 mA 11 10 7 5 9 13 11 1 1.5 2 2.5 3 f, FREQUENCY (GHz) Figure 4. Small - Signal Gain versus Output Power Figure 5. P1dB versus Frequency 60 50 40 30 20 10 0 4.2 4.4 4.6 4.8 5 5.2 5.4 IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) Pout, OUTPUT POWER (dBm) 70 4 0.5 15 80 ICC, COLLECTOR CURRENT (mA) 1 f, FREQUENCY (GHz) 3.5 30 27 24 21 VCC = 5 Vdc ICC = 41 mA 1 MHz Tone Spacing 18 15 0 1 2 3 VCC, COLLECTOR VOLTAGE (V) f, FREQUENCY (GHz) Figure 6. Collector Current versus Collector Voltage Figure 7. Third Order Output Intercept Point versus Frequency 4 MMG3011NT1 4 RF Device Data Freescale Semiconductor IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 50 OHM TYPICAL CHARACTERISTICS 33 30 27 24 21 f = 900 MHz 1 MHz Tone Spacing 18 4.95 4.9 5 5.05 5.1 VCC, COLLECTOR VOLTAGE (V) 31 30 29 28 27 26 VCC = 5 Vdc f = 900 MHz 1 MHz Tone Spacing 25 24 −40 −20 40 60 80 100 T, TEMPERATURE (_C) 105 −30 MTTF (YEARS) −40 −50 −60 −80 −6 103 −3 3 0 6 9 120 12 125 130 135 140 145 150 Pout, OUTPUT POWER (dBm) TJ, JUNCTION TEMPERATURE (°C) Figure 10. Third Order Intermodulation versus Output Power Figure 11. MTTF versus Junction Temperature 8 6 4 2 VCC = 5 Vdc ICC = 41 mA 0 0 104 VCC = 5 Vdc ICC = 41 mA f = 900 MHz 1 MHz Tone Spacing −70 1 2 3 NOTE: The MTTF is calculated with VCC = 5 Vdc, ICC = 41 mA ACPR, ADJACENT CHANNEL POWER RATIO (dBc) IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) 20 Figure 9. Third Order Output Intercept Point versus Case Temperature Figure 8. Third Order Output Intercept Point versus Collector Voltage NF, NOISE FIGURE (dB) 0 4 −20 VCC = 5 Vdc, ICC = 41 mA, f = 2140 MHz Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF) −30 −40 −50 −60 −70 −3 0 3 6 9 f, FREQUENCY (GHz) Pout, OUTPUT POWER (dBm) Figure 12. Noise Figure versus Frequency Figure 13. Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power 12 MMG3011NT1 RF Device Data Freescale Semiconductor 5 50 OHM APPLICATION CIRCUIT: 40- 300 MHz VSUPPLY R1 C3 C4 L1 RF INPUT Z1 DUT Z2 C1 Z1, Z5 Z2 Z3 Z3 Z4 Z5 VCC 0.347″ x 0.058″ Microstrip 0.575″ x 0.058″ Microstrip 0.172″ x 0.058″ Microstrip RF OUTPUT C2 Z4 PCB 0.403″ x 0.058″ Microstrip Getek Grade ML200C, 0.031″, εr = 4.1 Figure 14. 50 Ohm Test Circuit Schematic 20 S21 S21, S11, S22 (dB) 10 R1 0 C4 C3 L1 −10 C2 C1 S22 −20 −30 S11 VCC = 5 Vdc ICC = 41 mA −40 100 0 MMG30XX Rev 2 200 300 400 500 f, FREQUENCY (MHz) Figure 15. S21, S11 and S22 versus Frequency Figure 16. 50 Ohm Test Circuit Component Layout Table 8. 50 Ohm Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2, C3 0.01 μF Chip Capacitors C0603C103J5RAC Kemet C4 1000 pF Chip Capacitor C0603C102J5RAC Kemet L1 470 nH Chip Inductor BK2125HM471 - T Taiyo Yuden R1 0 W Chip Resistor ERJ3GEY0R00V Panasonic MMG3011NT1 6 RF Device Data Freescale Semiconductor 50 OHM APPLICATION CIRCUIT: 300 - 3600 MHz VSUPPLY R1 C3 C4 L1 RF INPUT Z1 DUT Z2 C1 Z1, Z5 Z2 Z3 Z3 Z4 Z5 VCC 0.347″ x 0.058″ Microstrip 0.575″ x 0.058″ Microstrip 0.172″ x 0.058″ Microstrip RF OUTPUT C2 Z4 PCB 0.403″ x 0.058″ Microstrip Getek Grade ML200C, 0.031″, εr = 4.1 Figure 17. 50 Ohm Test Circuit Schematic 20 S21 S21, S11, S22 (dB) 10 R1 0 C4 C3 L1 −10 C2 C1 S22 −20 S11 −30 VCC = 5 Vdc ICC = 41 mA −40 300 800 MMG30XX Rev 2 1300 1800 2300 2800 3300 3800 f, FREQUENCY (MHz) Figure 18. S21, S11 and S22 versus Frequency Figure 19. 50 Ohm Test Circuit Component Layout Table 9. 50 Ohm Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 150 pF Chip Capacitors C0603C151J5RAC Kemet C3 0.01 μF Chip Capacitor C0603C103J5RAC Kemet C4 1000 pF Chip Capacitor C0603C102J5RAC Kemet L1 56 nH Chip Inductor HK160856NJ - T Taiyo Yuden R1 0 W Chip Resistor ERJ3GEY0R00V Panasonic MMG3011NT1 RF Device Data Freescale Semiconductor 7 50 OHM TYPICAL CHARACTERISTICS Table 10. Common Emitter S - Parameters (VCC = 5 Vdc, ICC = 41 mA, TC = 25°C, 50 Ohm System) S11 S21 S12 S22 f MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 100 0.06552 170.033 5.96942 176.263 0.09975 - 0.816 0.13385 - 2.955 150 0.06383 167.931 5.93739 174.155 0.09991 - 1.18 0.13500 - 4.514 200 0.06269 165.117 5.91539 171.527 0.10015 - 2.477 0.13601 - 6.374 250 0.06117 162.063 5.89348 169.546 0.10045 - 2.883 0.13724 - 9.6 300 0.05981 158.66 5.87619 167.518 0.10063 - 3.34 0.13832 - 12.707 350 0.05830 154.766 5.86975 165.398 0.10085 - 4.05 0.14046 - 14.848 400 0.05702 150.967 5.85785 163.377 0.10108 - 4.506 0.14191 - 17.031 450 0.05620 147.157 5.84533 161.303 0.10131 - 5.159 0.14371 - 19.568 500 0.05480 143.805 5.83028 159.19 0.10142 - 5.766 0.14461 - 21.523 550 0.05404 139.862 5.81371 157.192 0.10154 - 6.253 0.14562 - 23.875 600 0.05345 136.215 5.79406 155.172 0.10159 - 6.83 0.14624 - 25.878 650 0.05300 132.595 5.77608 153.133 0.10166 - 7.449 0.14664 - 28.005 700 0.05301 129.164 5.75924 151.135 0.10172 - 7.985 0.14651 - 30.174 750 0.05337 125.784 5.73951 149.108 0.10177 - 8.608 0.14648 - 32.244 800 0.05401 122.842 5.71885 147.093 0.10184 - 9.178 0.14551 - 34.496 850 0.05502 120.061 5.69616 145.064 0.10204 - 9.746 0.14435 - 36.557 900 0.05607 117.736 5.67188 143.066 0.10209 - 10.319 0.14281 - 38.707 950 0.05712 115.541 5.65082 141.112 0.10222 - 10.915 0.14087 - 40.982 1000 0.05849 113.614 5.62851 139.109 0.10236 - 11.506 0.13859 - 43.169 1050 0.06056 112.274 5.60006 137.159 0.10243 - 12.103 0.13641 - 45.576 1100 0.06216 111.255 5.57557 135.169 0.10254 - 12.71 0.13320 - 47.809 1150 0.06385 110.823 5.55100 133.202 0.10280 - 13.306 0.12952 - 50.265 1200 0.06581 110.396 5.52258 131.231 0.10297 - 13.892 0.12567 - 52.695 1250 0.06795 110.14 5.49787 129.289 0.10307 - 14.559 0.12169 - 55.267 1300 0.07029 110.037 5.47256 127.359 0.10327 - 15.203 0.11718 - 57.902 1350 0.06417 110.3 5.44429 125.432 0.10350 - 15.851 0.11263 - 60.543 1400 0.06615 110.33 5.41593 123.531 0.10367 - 16.46 0.10814 - 63.335 1450 0.06834 110.566 5.38670 121.627 0.10385 - 17.039 0.10311 - 66.301 1500 0.07037 111.203 5.35727 119.73 0.10409 - 17.682 0.09824 - 69.317 1550 0.06361 106.262 5.33305 117.89 0.10444 - 18.324 0.09725 - 65.446 1600 0.06510 104.31 5.30415 116 0.10462 - 18.939 0.09352 - 67.448 1650 0.06709 103.387 5.26958 114.125 0.10474 - 19.656 0.09017 - 69.038 1700 0.06871 101.77 5.24166 112.251 0.10505 - 20.294 0.08614 - 71.347 1750 0.07086 100.502 5.21283 110.413 0.10523 - 20.945 0.08224 - 73.345 1800 0.07328 99.404 5.18411 108.549 0.10547 - 21.577 0.07847 - 75.924 1850 0.07577 98.261 5.15395 106.674 0.10576 - 22.375 0.07419 - 78.51 1900 0.07845 97.17 5.12325 104.849 0.10592 - 23.012 0.07045 - 81.64 1950 0.08096 96.588 5.09284 102.996 0.10612 - 23.742 0.06627 - 85.166 2000 0.08378 95.835 5.06020 101.184 0.10637 - 24.419 0.06270 - 88.825 2050 0.08710 94.791 5.03015 99.346 0.10667 - 25.036 0.05860 - 93.023 2100 0.08957 94.206 5.00175 97.519 0.10686 - 25.835 0.05542 - 97.743 2150 0.09160 93.044 4.96977 95.715 0.10722 - 26.591 0.05191 - 103.413 2200 0.09580 92.472 4.93541 93.926 0.10725 - 27.253 0.04928 - 109.11 2250 0.09801 91.352 4.90425 92.125 0.10767 - 27.931 0.04677 - 115.508 (continued) MMG3011NT1 8 RF Device Data Freescale Semiconductor 50 OHM TYPICAL CHARACTERISTICS Table 10. Common Emitter S - Parameters (VCC = 5 Vdc, ICC = 41 mA, TC = 25°C, 50 Ohm System) (continued) S11 S21 S12 S22 f MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 2300 0.10125 90.343 4.87215 90.327 0.10777 - 28.67 0.04452 - 122.296 2350 0.10384 89.16 4.84064 88.561 0.10817 - 29.394 0.04294 - 129.541 2400 0.10702 88.397 4.80597 86.77 0.10841 - 30.211 0.04205 - 138.1 2450 0.11008 87.519 4.77373 85.006 0.10869 - 30.924 0.04158 - 146.363 2500 0.11241 86.11 4.73852 83.289 0.10879 - 31.661 0.04157 - 154.578 2550 0.11540 85.045 4.71080 81.53 0.10916 - 32.408 0.04231 - 162.984 2600 0.11824 83.877 4.67765 79.803 0.10931 - 33.203 0.04340 - 171.06 2650 0.12090 82.346 4.64616 78.061 0.10958 - 33.929 0.04508 - 178.591 2700 0.12340 81.156 4.61372 76.324 0.10994 - 34.621 0.04725 174.366 2750 0.12606 79.687 4.58063 74.605 0.10994 - 35.444 0.05010 167.162 2800 0.12922 78.399 4.55022 72.881 0.11034 - 36.246 0.05315 160.781 2850 0.13144 77.016 4.51863 71.172 0.11063 - 37.03 0.05620 154.624 2900 0.13428 75.734 4.49057 69.495 0.11089 - 37.754 0.06004 149.451 2950 0.13713 74.325 4.45366 67.734 0.11109 - 38.64 0.06342 144.065 3000 0.13914 72.892 4.42536 66.061 0.11140 - 39.407 0.06743 138.972 3050 0.14320 71.422 4.39730 64.387 0.11161 - 40.164 0.07181 134.77 3100 0.14613 70.248 4.36561 62.698 0.11191 - 40.968 0.07596 130.079 3150 0.14898 69.069 4.33420 61.007 0.11211 - 41.861 0.08043 125.992 3200 0.15264 67.768 4.30556 59.316 0.11252 - 42.74 0.08543 122.138 3250 0.15656 66.632 4.27446 57.648 0.11258 - 43.528 0.09047 117.963 3300 0.15948 65.655 4.24479 55.984 0.11281 - 44.448 0.09540 114.29 3350 0.16325 64.574 4.21546 54.301 0.11317 - 45.247 0.10082 110.967 3400 0.16694 63.679 4.18743 52.638 0.11329 - 46.134 0.10661 107.412 3450 0.17113 62.876 4.15740 50.961 0.11352 - 46.992 0.11195 104.192 3500 0.17493 62.049 4.12688 49.288 0.11374 - 47.856 0.11808 101.204 3550 0.17906 61.193 4.09892 47.63 0.11391 - 48.768 0.12404 98.182 3600 0.18310 60.522 4.06981 45.971 0.11410 - 49.604 0.13009 95.337 MMG3011NT1 RF Device Data Freescale Semiconductor 9 1.7 7.62 0.305 diameter 2.49 3.48 5.33 2.54 1.27 1.27 0.58 0.86 0.64 3.86 Recommended Solder Stencil NOTES: 1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE USED IN PCB LAYOUT DESIGN. 2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS POSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN. 3. IF VIAS CANNOT BE PLACED ON THE LANDING PATTERN, THEN AS MANY VIAS AS POSSIBLE SHOULD BE PLACED AS CLOSE TO THE LANDING PATTERN AS POSSIBLE FOR OPTIMAL THERMAL AND RF PERFORMANCE. 4. RECOMMENDED VIA PATTERN SHOWN HAS 0.381 x 0.762 MM PITCH. Figure 20. Recommended Mounting Configuration MMG3011NT1 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MMG3011NT1 RF Device Data Freescale Semiconductor 11 MMG3011NT1 12 RF Device Data Freescale Semiconductor MMG3011NT1 RF Device Data Freescale Semiconductor 13 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3100: General Purpose Amplifier Biasing REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 3 Mar. 2007 • Corrected and updated Part Numbers in Tables 8 and 9, Component Designations and Values, to RoHS compliant part numbers, p. 6, 7 4 July 2007 • Replaced Case Outline 1514 - 01 with 1514 - 02, Issue D, p. 1, 11 - 13. Case updated to add missing dimension for Pin 1 and Pin 3. 5 Mar. 2008 • Removed Footnote 2, Continuous voltage and current applied to device, from Table 2, Maximum Ratings, p. 1 • Corrected Fig. 13, Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power y - axis (ACPR) unit of measure to dBc, p. 5 • Corrected S - Parameter table frequency column label to read “MHz” versus “GHz” and corrected frequency values from GHz to MHz, p. 8, 9 MMG3011NT1 14 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2005-2008. All rights reserved. MMG3011NT1 Document Number: RF Device Data MMG3011NT1 Rev. 5, 3/2008 Freescale Semiconductor 15