Freescale Semiconductor Technical Data Document Number: MMG3006NT1 Rev. 2, 3/2008 Heterojunction Bipolar Transistor Technology (InGaP HBT) MMG3006NT1 Broadband High Linearity Amplifier The MMG3006NT1 is a General Purpose Amplifier that is internally input prematched and designed for a broad range of Class A, small - signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 400 to 2400 MHz such as Cellular, PCS, WLL, PHS, VHF, UHF, UMTS and general small - signal RF. 400 - 2400 MHz, 17.5 dB 33 dBm InGaP HBT Features • Frequency: 400 - 2400 MHz • P1dB: 33 dBm @ 900 MHz • Small - Signal Gain: 17.5 dB @ 900 MHz • Third Order Output Intercept Point: 49 dBm @ 900 MHz • Single 5 Volt Supply • Internally Input Prematched to 50 Ohms • RoHS Compliant • In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 13 inch Reel. Table 1. Typical Performance (1) Table 2. Maximum Ratings Characteristic Symbol 900 MHz 1960 MHz 2140 MHz Unit Small - Signal Gain (S21) Gp 17.5 14 14 dB Input Return Loss (S11) IRL -8 -9 - 12 dB Output Return Loss (S22) ORL - 13 - 14 - 18 dB Power Output @1dB Compression P1db 33 33 33 dBm IP3 49 49 49 dBm Third Order Output Intercept Point CASE 1898 - 01 QFN 4x4 PLASTIC Rating Symbol Value Unit Supply Voltage VDC 6 V Supply Current IDC 1400 mA RF Input Power Pin 28 dBm Storage Temperature Range Tstg - 65 to +150 °C Junction Temperature (2) TJ 150 °C 2. For reliable operation, the junction temperature should not exceed 150°C. 1. VDC = 5 Vdc, TC = 25°C, 50 ohm system Table 3. Thermal Characteristics (VDC = 5 Vdc, IDC = 850 mA, TC = 25°C) Characteristic Thermal Resistance, Junction to Case Symbol Value (3) Unit RθJC 7.8 °C/W 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2008. All rights reserved. RF Device Data Freescale Semiconductor MMG3006NT1 1 Table 4. Electrical Characteristics (VDC = 5 Vdc, 900 MHz, TC = 25°C, 50 ohm system, in Freescale Application Circuit) Symbol Min Typ Max Unit Small - Signal Gain (S21) Characteristic Gp 16.5 17.5 — dB Input Return Loss (S11) IRL — -8 — dB Output Return Loss (S22) ORL — - 13 — dB Power Output @ 1dB Compression P1dB — 33 — dBm Third Order Output Intercept Point IP3 — 49 — dBm Noise Figure NF — 6.6 — dB Supply Current (1) IDC 760 850 960 mA Supply Voltage (1) VDC — 5 — V 1. For reliable operation, the junction temperature should not exceed 150°C. MMG3006NT1 2 RF Device Data Freescale Semiconductor Table 5. Functional Pin Description Name Pin Number Description VBA 1 RFin 2, 3, 4 RF input for the power amplifier. This pin is DC - coupled and requires a DC - blocking series capacitor. RFout/ VCC 9, 10, 11, 12 RF output for the power amplifier. This pin is DC - coupled and requires a DC - blocking series capacitor. VCC 16 GND Backside Center Metal VCC Bias voltage supply. 16 15 14 13 12 RFout/VCC 11 RFout/VCC VBA 1 RFin 2 10 RFout/VCC 9 RFout/VCC RFin 3 RFin 4 Collector voltage supply. 5 The center metal base of the QFN package provides both DC and RF ground as well as heat sink contact for the power amplifier. 6 7 8 (Top View) Figure 1. Pin Connections Table 6. ESD Protection Characteristics Test Conditions/Test Methodology Class Human Body Model (per JESD 22 - A114) 1C (Minimum) Machine Model (per EIA/JESD 22 - A115) A (Minimum) Charge Device Model (per JESD 22 - C101) IV (Minimum) Table 7. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 1 260 °C MMG3006NT1 RF Device Data Freescale Semiconductor 3 50 OHM TYPICAL CHARACTERISTICS 106 1600 1200 MTTF (YEARS) ICC, COLLECTOR CURRENT (mA) 1400 1000 800 600 105 104 400 VCC = 5 Vdc 200 103 0 1 0 2 3 VBA, BIAS VOLTAGE (V) Figure 2. Collector Current versus Bias Voltage 120 125 130 135 140 145 150 TJ, JUNCTION TEMPERATURE (°C) NOTE: The MTTF is calculated with VDC = 5 Vdc, IDC = 850 mA Figure 3. MTTF versus Junction Temperature MMG3006NT1 4 RF Device Data Freescale Semiconductor 50 OHM APPLICATION CIRCUIT: 900 MHz VSUPPLY R3 R1 16 C4 C3 RF INPUT R2 1 Z1 Z2 Z3 Z4 Z5 15 14 13 C6 2 Z6 11 Z7 Z8 Z9 10 C9 4 9 5 Z1 Z2, Z9, Z10 Z3 Z4 Z5 6 7 Z10 Z11 RF OUTPUT C2 DUT C8 C7 12 Current Mirror 3 C1 C5 L1 C10 C11 8 0.140″ x 0.028″ Microstrip 0.044″ x 0.028″ Microstrip 0.169″ x 0.028″ Microstrip 0.177″ x 0.028″ Microstrip 0.026″ x 0.053″ Microstrip Z6 Z7 Z8 Z11 PCB 0.026″ x 0.089″ Microstrip 0.167″ x 0.028″ Microstrip 0.178″ x 0.028″ Microstrip 0.096″ x 0.028″ Microstrip Isola FR408, 0.014″, εr = 3.7 Figure 4. 50 Ohm Test Circuit Schematic Table 8. 50 Ohm Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 15 pF Chip Capacitors ECUV1H150JCV Panasonic C3, C6 0.01 μF Chip Capacitors C0603C103J5RAC Kemet C4, C7 0.1 μF Chip Capacitors C0603C104J5RAC Kemet C5 2.2 μF Chip Capacitor T491A225K016AT Kemet C8 6.8 pF Chip Capacitor 06035J6R8BS AVX C9, C11 3.9 pF Chip Capacitors 06035J3R9BS AVX C10 5.6 pF Chip Capacitor 06035J5R6BS AVX L1 15 nH Chip Inductor 1008CS - 150XJB Coilcraft R1 100 Ω, 1/4 W Chip Resistor ERJ8GEYJ101V Panasonic R2, R3 0 Ω, 1/10 W Chip Resistors CRCW06030000FKEA Vishay MMG3006NT1 RF Device Data Freescale Semiconductor 5 50 OHM APPLICATION CIRCUIT: 900 MHz VBA VSUPPLY C5 R2 C3 C4 C6 R1 C7 R3 L1 RFin RFout C2 C1 C8 C9 C10 C11 MMG3006N Rev 4 Figure 5. 50 Ohm Test Circuit Component Layout MMG3006NT1 6 RF Device Data Freescale Semiconductor 50 OHM TYPICAL CHARACTERISTICS: 900 MHz −5 18 16 IRL, INPUT RETURN LOSS (dB) Gp, SMALL−SIGNAL GAIN (dB) 20 TC = −40°C 85°C 25°C 14 12 −6 TC = −40°C −7 85°C 25°C −8 −9 VDC = 5 Vdc VDC = 5 Vdc 10 840 870 900 930 −10 840 960 P1dB, 1 dB COMPRESSION POINT (dBm) TC = −40°C 25°C VDC = 5 Vdc 870 900 930 85°C 35 30 25°C TC = −40°C 25 VDC = 5 Vdc 20 840 960 870 900 930 960 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 8. Output Return Loss (S22) versus Frequency Figure 9. P1dB versus Frequency 52 10 TC = −40°C 48 8 25°C NF, NOISE FIGURE (dB) ORL, OUTPUT RETURN LOSS (dB) IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 40 −20 85°C 46 TC = 85°C −40°C 6 25°C 4 2 44 VDC = 5 Vdc 1 MHz Tone Spacing 42 840 960 Figure 7. Input Return Loss (S11) versus Frequency 85°C 50 930 Figure 6. Small - Signal Gain (S21) versus Frequency −15 −25 840 900 f, FREQUENCY (MHz) −5 −10 870 f, FREQUENCY (MHz) 870 900 930 VDC = 5 Vdc 960 0 840 870 900 930 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 10. Third Order Output Intercept Point versus Frequency Figure 11. Noise Figure versus Frequency 960 MMG3006NT1 RF Device Data Freescale Semiconductor 7 ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ACPR, ADJACENT CHANNEL POWER RATIO (dBc) 50 OHM TYPICAL CHARACTERISTICS: 900 MHz −25 VDC = 5 Vdc, f = 900 MHz Single−Carrier IS−95, 9 Channel Forward 750 kHz Measurement Offset 30 kHz Measurement Bandwidth −30 −35 −40 25°C TC = −40°C −45 −50 85°C −55 24 26 28 30 32 −30 VDC = 5 Vdc, f = 900 MHz Single−Carrier IS−95, 9 Channel Forward 885 kHz Measurement Offset 30 kHz Measurement Bandwidth −35 −40 −45 TC = −40°C −50 25°C 85°C −55 −60 24 26 28 30 32 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) Figure 12. IS - 95 Adjacent Channel Power Ratio versus Output Power Figure 13. IS - 95 Adjacent Channel Power Ratio versus Output Power MMG3006NT1 8 RF Device Data Freescale Semiconductor 50 OHM APPLICATION CIRCUIT: 1960 MHz VSUPPLY C4 C3 RF INPUT R3 R2 R1 16 1 Z1 Z2 Z3 Z4 Z5 15 2 11 Z6 Z7 Z8 Z9 Z10 10 C9 4 9 5 Z1, Z11 Z2 Z3 Z4 Z5 Z6 6 7 0.140″ x 0.028″ Microstrip 0.268″ x 0.028″ Microstrip 0.084″ x 0.028″ Microstrip 0.038″ x 0.028″ Microstrip 0.026″ x 0.053″ Microstrip 0.026″ x 0.089″ Microstrip C7 Z11 RF OUTPUT C2 DUT C8 C6 L1 12 Current Mirror 3 C1 C5 14 13 C10 C11 8 Z7 Z8 Z9 Z10 PCB 0.041″ x 0.028″ Microstrip 0.093″ x 0.028″ Microstrip 0.033″ x 0.028″ Microstrip 0.222″ x 0.028″ Microstrip Isola FR408, 0.014″, εr = 3.7 Figure 14. 50 Ohm Test Circuit Schematic Table 9. 50 Ohm Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 15 pF Chip Capacitors ECUV1H150JCV Panasonic C3, C6 0.01 μF Chip Capacitors C0603C103J5RAC Kemet C4, C7 0.1 μF Chip Capacitors C0603C104J5RAC Kemet C5 2.2 μF Chip Capacitor T491A225K016AT Kemet C8, C9 3.0 pF Chip Capacitors 06035J3R0BS AVX C10 2.0 pF Chip Capacitor 06035J2R0BS AVX C11 2.7 pF Chip Capacitor 06035J2R7BS AVX L1 15 nH Chip Inductor 1008CS - 150XJB Coilcraft R1 100 Ω, 1/4 W Chip Resistor ERJ8GEYJ101V Panasonic R2, R3 0 Ω, 1/10 W Chip Resistors CRCW06030000FKEA Vishay MMG3006NT1 RF Device Data Freescale Semiconductor 9 50 OHM APPLICATION CIRCUIT: 1960 MHz VBA VSUPPLY C5 R2 C3 C4 C6 R1 C7 R3 L1 RFin RFout C2 C1 C8 C9 C10 C11 MMG3006N Rev 4 Figure 15. 50 Ohm Test Circuit Component Layout MMG3006NT1 10 RF Device Data Freescale Semiconductor 50 OHM TYPICAL CHARACTERISTICS: 1960 MHz −6 IRL, INPUT RETURN LOSS (dB) Gp, SMALL−SIGNAL GAIN (dB) 18 16 TC = −40°C 14 85°C 25°C 12 10 −7 TC = −40°C −8 85°C 25°C −9 −10 VDC = 5 Vdc 8 1900 1930 1960 1990 VDC = 5 Vdc −11 1900 f, FREQUENCY (MHz) 2020 1960 f, FREQUENCY (MHz) Figure 16. Small - Signal Gain (S21) versus Frequency Figure 17. Input Return Loss (S11) versus Frequency IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) P1dB, 1 dB COMPRESSION POINT (dBm) −10 TC = −40°C −15 85°C 25°C −20 VDC = 5 Vdc −25 1900 1930 1960 1990 35 2020 85°C 25°C TC = −40°C 30 25 VDC = 5 Vdc 20 1900 2020 1930 1960 1990 2020 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 18. Output Return Loss (S22) versus Frequency Figure 19. P1dB versus Frequency 52 10 TC = −40°C 50 8 25°C 48 85°C 46 TC = 85°C 6 4 −40°C 25°C 2 44 VDC = 5 Vdc 1 MHz Tone Spacing 42 1900 1990 40 NF, NOISE FIGURE (dB) ORL, OUTPUT RETURN LOSS (dB) −5 1930 1930 1960 1990 VDC = 5 Vdc 2020 0 1900 1930 1960 1990 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 20. Third Order Output Intercept Point versus Frequency Figure 21. Noise Figure versus Frequency 2020 MMG3006NT1 RF Device Data Freescale Semiconductor 11 ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ACPR, ADJACENT CHANNEL POWER RATIO (dBc) 50 OHM TYPICAL CHARACTERISTICS: 1960 MHz −30 VDC = 5 Vdc, f = 1960 MHz Single−Carrier IS−95, 9 Channel Forward 750 kHz Measurement Offset 30 kHz Measurement Bandwidth −35 −40 −45 25°C TC = −40°C −50 85°C −55 22 24 26 28 30 32 −30 VDC = 5 Vdc, f = 1960 MHz Single−Carrier IS−95, 9 Channel Forward 885 kHz Measurement Offset 30 kHz Measurement Bandwidth −35 −40 −45 −50 −55 TC = −40°C 85°C −60 25°C −65 −70 20 22 24 26 28 30 32 Pout, OUTPUT POWER (dBm) Figure 22. IS - 95 Adjacent Channel Power Ratio versus Output Power Figure 23. IS - 95 Adjacent Channel Power Ratio versus Output Power ACPR, ADJACENT CHANNEL POWER RATIO (dBc) Pout, OUTPUT POWER (dBm) −30 −35 VDC = 5 Vdc, f = 1960 MHz Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF) −40 −45 TC = −40°C 25°C −50 −55 85°C −60 −65 20 22 24 26 28 Pout, OUTPUT POWER (dBm) Figure 24. Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power MMG3006NT1 12 RF Device Data Freescale Semiconductor 50 OHM APPLICATION CIRCUIT: 2140 MHz VSUPPLY C4 C3 RF INPUT R3 R2 R1 16 1 Z1 Z2 Z3 Z4 12 Current Mirror 2 Z6 11 Z7 Z8 Z9 10 4 6 7 0.096″ x 0.028″ Microstrip 0.044″ x 0.028″ Microstrip 0.352″ x 0.028″ Microstrip 0.038″ x 0.028″ Microstrip 0.026″ x 0.053″ Microstrip 0.026″ x 0.089″ Microstrip C7 Z10 RF OUTPUT C2 9 5 C6 L1 DUT C9 Z1 Z2 Z3 Z4 Z5 Z6 C5 14 13 3 C1 C8 Z5 15 C10 8 Z7 Z8 Z9 Z10 PCB 0.074″ x 0.028″ Microstrip 0.093″ x 0.028″ Microstrip 0.222″ x 0.028″ Microstrip 0.140″ x 0.028″ Microstrip Isola FR408, 0.014″, εr = 3.7 Figure 25. 50 Ohm Test Circuit Schematic Table 10. 50 Ohm Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 15 pF Chip Capacitors ECUV1H150JCV Panasonic C3, C6 0.01 μF Chip Capacitors C0603C103J5RAC Kemet C4, C7 0.1 μF Chip Capacitors C0603C104J5RAC Kemet C5 2.2 μF Chip Capacitor T491A225K016AT Kemet C8 0.5 pF Chip Capacitor 06035J0R5BS AVX C9 3.6 pF Chip Capacitor 06035J3R6BS AVX C10 3.9 pF Chip Capacitor 06035J3R9BS AVX L1 15 nH Chip Inductor 1008CS - 150XJB Coilcraft R1 100 Ω, 1/4 W Chip Resistor ERJ8GEYJ101V Panasonic R2, R3 0 Ω, 1/10 W Chip Resistors CRCW06030000FKEA Vishay MMG3006NT1 RF Device Data Freescale Semiconductor 13 50 OHM APPLICATION CIRCUIT: 2140 MHz VBA VSUPPLY C5 R2 C3 C4 C6 R1 C7 R3 L1 RFin RFout C2 C1 C8 C9 C10 MMG3006N Rev 4 Figure 26. 50 Ohm Test Circuit Component Layout MMG3006NT1 14 RF Device Data Freescale Semiconductor 50 OHM TYPICAL CHARACTERISTICS: 2140 MHz −15 IRL, INPUT RETURN LOSS (dB) Gp, SMALL−SIGNAL GAIN (dB) 18 16 TC = −40°C 14 85°C 25°C 12 10 TC = −40°C −20 25°C −25 85°C −30 VDC = 5 Vdc 8 2080 2110 2140 2170 VDC = 5 Vdc −35 2080 f, FREQUENCY (MHz) 2200 2140 f, FREQUENCY (MHz) Figure 27. Small - Signal Gain (S21) versus Frequency Figure 28. Input Return Loss (S11) versus Frequency TC = −40°C −15 85°C 25°C −20 VDC = 5 Vdc IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) −25 2080 2110 2140 2170 P1dB, 1 dB COMPRESSION POINT (dBm) −10 TC = −40°C 25°C 30 85°C 25 VDC = 5 Vdc 2110 2140 2170 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 29. Output Return Loss (S22) versus Frequency Figure 30. P1dB versus Frequency 2200 10 TC = −40°C 8 25°C 48 85°C 46 TC = 85°C 6 25°C 4 −40°C 2 44 VDC = 5 Vdc 1 MHz Tone Spacing 42 2080 2200 35 20 2080 2200 52 50 2170 40 NF, NOISE FIGURE (dB) ORL, OUTPUT RETURN LOSS (dB) −5 2110 2110 2140 2170 VDC = 5 Vdc 2200 0 2080 2110 2140 2170 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 31. Third Order Output Intercept Point versus Frequency Figure 32. Noise Figure versus Frequency 2200 MMG3006NT1 RF Device Data Freescale Semiconductor 15 ACPR, ADJACENT CHANNEL POWER RATIO (dBc) −30 VDC = 5 Vdc, f = 2140 MHz Single−Carrier IS−95, 9 Channel Forward 750 kHz Measurement Offset 30 kHz Measurement Bandwidth −35 −40 25°C −45 85°C −50 TC = −40°C −55 22 24 26 28 32 30 −30 VDC = 5 Vdc, f = 2140 MHz Single−Carrier IS−95, 9 Channel Forward 885 kHz Measurement Offset 30 kHz Measurement Bandwidth −35 −40 −45 −50 −55 TC = −40°C −60 85°C 25°C −65 −70 20 22 24 26 28 30 32 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) Figure 33. IS - 95 Adjacent Channel Power Ratio versus Output Power Figure 34. IS - 95 Adjacent Channel Power Ratio versus Output Power ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ACPR, ADJACENT CHANNEL POWER RATIO (dBc) 50 OHM TYPICAL CHARACTERISTICS: 2140 MHz −30 −35 VDC = 5 Vdc, f = 2140 MHz Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF) −40 85°C 25°C −45 TC = −40°C −50 −55 −60 −65 20 22 24 26 28 Pout, OUTPUT POWER (dBm) Figure 35. Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power MMG3006NT1 16 RF Device Data Freescale Semiconductor 50 OHM TYPICAL CHARACTERISTICS Table 11. Common Emitter S - Parameters (VDC = 5 Vdc, IDC = 850 mA, TC = 255C, 50 Ohm System) S11 S21 S12 S22 f MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 250 0.821 - 173.7 2.816 143.3 0.00597 - 61.7 0.922 - 179.0 300 0.841 - 174.5 2.643 137.3 0.00514 - 56.7 0.922 - 178.9 350 0.860 - 175.2 2.471 132.0 0.00455 - 51.6 0.922 - 179.1 400 0.872 - 175.3 2.309 127.6 0.00435 - 44.2 0.921 - 180.0 450 0.889 - 176.1 2.149 124.2 0.00371 - 46.7 0.924 - 179.4 500 0.900 - 177.0 2.030 120.3 0.00331 - 40.6 0.924 - 179.6 550 0.909 - 177.9 1.908 116.9 0.00306 - 35.3 0.925 - 179.4 600 0.917 - 178.8 1.796 113.8 0.00286 - 30.6 0.925 - 179.4 650 0.924 - 179.6 1.695 110.8 0.00269 - 25.9 0.924 - 179.6 700 0.930 179.6 1.605 108.2 0.00258 - 20.7 0.923 - 179.5 750 0.935 178.9 1.522 105.8 0.00248 - 15.9 0.922 - 179.6 800 0.939 178.2 1.448 103.4 0.00243 - 11.1 0.921 - 179.8 850 0.943 177.5 1.380 101.3 0.00240 - 6.6 0.920 - 179.9 900 0.946 176.9 1.320 99.2 0.00239 - 2.2 0.919 180.0 950 0.949 176.3 1.266 97.2 0.00239 1.8 0.918 179.9 1000 0.951 175.7 1.216 95.2 0.00242 5.4 0.918 179.6 1050 0.953 175.2 1.172 93.4 0.00246 8.8 0.918 179.5 1100 0.954 174.6 1.133 91.5 0.00250 11.9 0.917 179.3 1150 0.956 174.1 1.098 89.7 0.00255 14.1 0.917 179.0 1200 0.957 173.6 1.067 87.8 0.00261 16.7 0.916 178.8 1250 0.958 173.1 1.039 86.0 0.00268 18.6 0.915 178.6 1300 0.958 172.6 1.015 84.3 0.00275 19.9 0.915 178.3 1350 0.958 172.2 0.994 82.4 0.00282 21.4 0.914 177.9 1400 0.959 171.7 0.978 80.5 0.00292 22.6 0.913 177.6 1450 0.958 171.3 0.964 78.5 0.00299 23.5 0.913 177.3 1500 0.957 170.9 0.952 76.5 0.00306 23.9 0.912 177.1 1550 0.957 170.5 0.945 74.3 0.00316 24.2 0.912 176.7 1600 0.955 170.0 0.941 72.0 0.00324 24.3 0.911 176.5 1650 0.954 169.7 0.941 69.6 0.00332 23.7 0.910 176.2 1700 0.951 169.2 0.944 67.0 0.00340 23.3 0.909 175.8 1750 0.949 168.8 0.951 64.1 0.00348 22.3 0.907 175.5 1800 0.945 168.4 0.969 60.9 0.00360 21.0 0.906 175.2 1850 0.942 168.1 0.975 57.4 0.00361 19.4 0.905 175.0 1900 0.937 167.7 0.985 53.5 0.00364 16.9 0.903 174.6 1950 0.932 167.3 0.999 49.0 0.00363 14.0 0.902 174.4 2000 0.925 166.9 1.016 43.7 0.00357 9.9 0.901 174.1 2050 0.918 166.4 1.034 37.5 0.00346 5.4 0.902 173.8 2100 0.910 166.0 1.048 30.2 0.00322 - 0.4 0.903 173.4 2150 0.904 165.6 1.053 21.7 0.00290 - 6.9 0.905 173.2 2200 0.900 165.2 1.038 11.9 0.00242 - 13.5 0.910 172.9 2250 0.902 164.9 0.995 1.2 0.00178 - 19.1 0.916 172.5 2300 0.910 164.4 0.922 - 10.0 0.00104 - 18.2 0.925 172.2 2350 0.924 164.1 0.823 - 20.9 0.000474 24.3 0.933 171.9 (continued) MMG3006NT1 RF Device Data Freescale Semiconductor 17 50 OHM TYPICAL CHARACTERISTICS Table 11. Common Emitter S - Parameters (VDC = 5 Vdc, IDC = 850 mA, TC = 255C, 50 Ohm System) (continued) S11 S21 S12 S22 f MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 2400 0.938 163.7 0.711 - 30.9 0.000864 82.0 0.938 171.7 2450 0.952 163.3 0.600 - 39.7 0.00152 86.3 0.943 171.4 2500 0.963 162.9 0.498 - 47.0 0.00207 84.0 0.945 171.1 2550 0.970 162.5 0.408 - 53.1 0.00253 80.0 0.946 170.8 2600 0.976 162.1 0.332 - 58.0 0.00287 76.4 0.947 170.4 2650 0.981 161.6 0.268 - 61.9 0.00316 73.4 0.945 169.0 2700 0.983 161.2 0.215 - 64.8 0.00340 71.2 0.944 168.3 2750 0.986 160.8 0.170 - 66.7 0.00361 69.2 0.943 167.4 2800 0.988 160.5 0.132 - 67.6 0.00382 67.5 0.941 166.5 2850 0.988 160.0 0.101 - 66.9 0.00402 66.1 0.940 165.9 2900 0.989 159.6 0.075 - 64.1 0.00418 64.8 0.939 165.1 2950 0.990 159.2 0.053 - 57.4 0.00438 63.4 0.938 164.5 3000 0.990 158.8 0.037 - 43.3 0.00455 62.3 0.937 163.9 MMG3006NT1 18 RF Device Data Freescale Semiconductor 0.65 0.40 3.00 4.30 0.65 2.5 x 2.5 Solder Pad with Thermal Via Structure All Dimensions in mm NOTES: 1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE USED IN PCB LAYOUT DESIGN. 2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS POSSIBLE SHOULD BE PLACED ON THE BACKSIDE CENTER METAL GROUND LANDING PATTERN. 3. REFER TO FREESCALE APPLICATION NOTE AN2467 FOR ADDITIONAL PQFN PCB GUIDELINES. Figure 36. Recommended Mounting Configuration MMG3006NT1 RF Device Data Freescale Semiconductor 19 PACKAGE DIMENSIONS MMG3006NT1 20 RF Device Data Freescale Semiconductor MMG3006NT1 RF Device Data Freescale Semiconductor 21 MMG3006NT1 22 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3100: General Purpose Amplifier Biasing REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Jan. 2008 • Initial Release of Data Sheet 1 Mar. 2008 • Corrected Table 7. Moisture Sensitivity Level Rating from 3 to 1, p. 3 • Corrected S - Parameter table frequency column label to read “MHz” versus “GHz”, p. 17, 18 2 Mar. 2008 • Corrected Tape and Reel information from 330 mm to 12 mm, p. 1 • Corrected Figs. 24, 35, Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power y - axis (ACPR) unit of measure to dBc, p. 12, 16 MMG3006NT1 RF Device Data Freescale Semiconductor 23 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008. All rights reserved. MMG3006NT1 Document Number: MMG3006NT1 Rev. 2, 3/2008 24 RF Device Data Freescale Semiconductor