MICROCHIP MCP6004IST

M
MCP6001/2/4
1 MHz Bandwidth Low Power Op Amp
Features
Description
•
•
•
•
•
•
•
The Microchip Technology Inc. MCP6001/2/4 family of
operational amplifiers (op amps) is specifically
designed for general-purpose applications. This family
has a 1 MHz gain bandwidth product and 90° phase
margin (typ.). It also maintains 45° phase margin (typ.)
with 500 pF capacitive load. This family operates from
a single supply voltage as low as 1.8V, while drawing
100 µA (typ.) quiescent current. Additionally, the
MCP6001/2/4 supports rail-to-rail input and output
swing, with a common mode input voltage range of
VDD + 300 mV to V SS - 300 mV. This family of operational amplifiers is designed with Microchip’s
advanced CMOS process.
Available in SC-70-5 and SOT-23-5 packages
1 MHz Gain Bandwidth Product (typ.)
Rail-to-Rail Input/Output
Supply Voltage: 1.8V to 5.5V
Supply Current: IQ = 100 µA (typ.)
90° Phase Margin (typ.)
Temperature Range:
- Industrial: -40°C to +85°C
- Extended: -40°C to +125°C
• Available in Single, Dual and Quad Packages
Applications
The MCP6001/2/4 family is available in the industrial
and extended temperature ranges. It also has a power
supply range of 1.8V to 5.5V.
Automotive
Portable Equipment
Photodiode Pre-amps
Analog Filters
Notebooks and PDAs
Battery-Powered Systems
Package Types
MCP6001
MCP6002
SC-70-5, SOT-23-5
PDIP, SOIC, MSOP
FilterLab® Software (at www.microchip.com)
VSS 2
4 VIN–
VINA+ 3
8 VDD
A
- +
7 VOUTB
B
+ -
VSS 4
6 VINB–
5 VINB+
SOT-23-5
5 VSS
VOUT 1
VDD
+
VDD 2
+
-
VIN+ 3
VOUT
MCP6001
VSS
4 VIN–
MCP6001U
SOT-23-5
VIN– 3
-
MCP6004
PDIP, SOIC, TSSOP
VOUTA 1
VINA– 2
14 VOUTD
A
D
+
- +
- 13 VIND–
VINA+ 3
12 VIND+
VDD 4
5 VDD
VIN+ 1
VSS 2
R1
VREF
-
VIN+ 3
VOUTA 1
VINA– 2
MCP6001R
Typical Application
R2
+
Spice Macro Models (at www.microchip.com)
VIN
5 VDD
VOUT 1
Available Tools
+
•
•
•
•
•
•
VINB+ 5
VINB– 6
4 VOUT
11 VSS
VOUTB 7
10 VINC+
- + + B
C
9 VINC–
8 VOUTC
R1
Gain = 1 + -----R2
Non-Inverting Amplifier
 2003 Microchip Technology Inc.
DS21733D-page 1
MCP6001/2/4
1.0
ELECTRICAL
CHARACTERISTICS
PIN FUNCTION TABLE
Name
Absolute Maximum Ratings †
VDD - VSS .........................................................................7.0V
All Inputs and Outputs ...................... VSS -0.3V to V DD +0.3V
Difference Input Voltage ....................................... |VDD - VSS|
Output Short Circuit Current ..................................continuous
Current at Input Pins ....................................................±2 mA
Current at Output and Supply Pins ............................±30 mA
Storage Temperature ....................................-65°C to +150°C
Function
VIN+, V INA+, VINB+, VINC+,
VIND+
Non-inverting Inputs
VIN–, V INA–, VINB–, V INC–,
VIND–
Inverting Inputs
VDD
Positive Power Supply
VSS
Negative Power Supply
VOUT, VOUTA, V OUTB,
VOUTC, V OUTD
Outputs
Maximum Junction Temperature (TJ) .......................... +150°C
ESD Protection On All Pins (HBM;MM) ............... ≥ 4 kV; 200V
† Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may
affect device reliability.
DC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +5.5V, VSS = GND, VCM = VDD /2, RL = 10 kΩ
to VDD /2, and VOUT ~ VDD/2.
Parameters
Sym
Min
Typ
Max
Units
VOS
-7.0
—
+7.0
mV
∆VOS/∆TA
—
±2.0
—
µV/°C
PSRR
—
86
—
dB
Conditions
Input Offset
Input Offset Voltage
Input Offset Drift with Temperature
Power Supply Rejection
VCM = VSS
TA= -40°C to +125°C,
VCM = VSS
VCM = VSS
Input Bias Current and Impedance
IB
—
±1.0
—
pA
Industrial Temperature
IB
—
19
—
pA
TA = +85°C
Extended Temperature
IB
—
1100
—
pA
TA = +125°C
Input Offset Current
IOS
—
±1.0
—
pA
Common Mode Input Impedance
ZCM
—
1013||6
—
Ω||pF
Differential Input Impedance
ZDIFF
—
1013||3
—
Ω||pF
Common Mode Input Range
V CMR
VSS − 0.3
—
VDD + 0.3
V
Common Mode Rejection Ratio
CMRR
60
76
—
dB
VCM = -0.3V to 5.3V, VDD = 5V
AOL
88
112
—
dB
VOUT = 0.3V to VDD - 0.3V,
VCM = VSS
VOL, VOH
VSS + 25
—
V DD − 25
mV
VDD = 5.5V
Input Bias Current:
Common Mode
Open-Loop Gain
DC Open-Loop Gain (large signal)
Output
Maximum Output Voltage Swing
Output Short-Circuit Current
—
±6
—
mA
VDD = 1.8V
—
±23
—
mA
VDD = 5.5V
VDD
1.8
—
5.5
V
IQ
50
100
170
µA
ISC
Power Supply
Supply Voltage
Quiescent Current per Amplifier
DS21733D-page 2
IO = 0, VDD = 5.5V, VCM = 5V
 2003 Microchip Technology Inc.
MCP6001/2/4
AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +1.8 to 5.5V, VSS = GND, VCM = VDD/2,
VOUT ≈ VDD/2, RL = 10 kΩ to VDD/2, and CL = 60 pF.
Parameters
Sym
Min
Typ
Max
Units
GBWP
—
1.0
—
MHz
Conditions
AC Response
Gain Bandwidth Product
Phase Margin
PM
—
90
—
°
Slew Rate
SR
—
0.6
—
V/µs
G = +1
Input Noise Voltage
Eni
—
6.1
—
µVp-p
Input Noise Voltage Density
eni
—
28
—
nV/√Hz
f = 1 kHz
Input Noise Current Density
ini
—
0.6
—
fA/√Hz
f = 1 kHz
Noise
f = 0.1 Hz to 10 Hz
TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, VDD = +1.8V to +5.5V, and VSS = GND.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Industrial Temperature Range
TA
-40
—
+85
°C
Extended Temperature Range
TA
-40
—
+125
°C
Operating Temperature Range
TA
-40
—
+125
°C
Storage Temperature Range
TA
-65
—
+150
°C
Thermal Resistance, 5L-SC70
θJA
—
331
—
°C/W
Thermal Resistance, 5L-SOT-23
θJA
—
256
—
°C/W
Thermal Resistance, 8L-PDIP
θJA
—
85
—
°C/W
Thermal Resistance, 8L-SOIC (150 mil)
θJA
—
163
—
°C/W
Thermal Resistance, 8L-SOIC (208 mil)
θJA
—
118
—
°C/W
Thermal Resistance, 8L-MSOP
θJA
—
206
—
°C/W
Thermal Resistance, 14L-PDIP
θJA
—
70
—
°C/W
Thermal Resistance, 14L-SOIC
θJA
—
120
—
°C/W
θJA
—
100
—
°C/W
(Note)
Thermal Package Resistances
Thermal Resistance, 14L-TSSOP
Note:
The industrial temperature devices operate over this extended temperature range, but with reduced performance. In any case, the internal Junction Temperature (TJ) must not exceed the Absolute Maximum
specification of +150°C.
 2003 Microchip Technology Inc.
DS21733D-page 3
MCP6001/2/4
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +5.5V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2,
RL = 10 kΩ to VDD/2, and CL = 60 pF.
100
1225 Samples
VCM = VSS
20%
18%
PSRR, CMRR (dB)
16%
14%
12%
10%
8%
6%
90
PSRR (VCM = VSS)
80
CMRR (VCM = -0.3V to +5.3V)
4%
2%
70
7
6
5
4
-50
-25
0
Input Offset Voltage (mV)
Input Offset Voltage
100
FIGURE 2-4:
Temperature.
VCM = VSS
Open Loop Gain (dB)
PSRR-
70
PSRR+
CMRR
40
-30
80
-60
Phase
60
-90
40
-120
20
30
1.E+04
-20
0.1
1.E+05
10k
1.E-01
100k
1.E+00
1.E+01
1
10
Frequency (Hz)
2%
55%
50%
45%
40%
35%
30%
25%
20%
605 Samples
V DD = 5.5 V
V CM = VDD
TA = +125°C
15%
10%
5%
0%
30
28
26
24
22
20
18
16
14
12
10
8
6
0
0%
4
1.E+07
Input Bias Current (pA)
Input Bias Current at +85°C
1500
4%
2
-210
10M
1400
6%
0
1.E+06
1M
1300
8%
DS21733D-page 4
1.E+05
100k
1200
1230 Samples
V DD = 5.5 V
V CM = VDD
TA = +85°C
FIGURE 2-3:
Histogram.
1.E+04
10k
Open-Loop Gain, Phase vs.
300
10%
FIGURE 2-5:
Frequency.
200
12%
PSRR, CMRR vs.
Percentage of Occurrences
Percentage of Occurrences
14%
1.E+03
1k
Frequency (Hz)
100
FIGURE 2-2:
Frequency.
1.E+02
100
1100
1.E+03
1k
900
1.E+02
100
-180
VCM = VSS
1000
1.E+01
10
-150
Gain
0
20
125
100
800
50
100
0
700
60
75
120
600
PSRR, CMRR (dB)
90
80
50
CMRR, PSRR vs. Ambient
500
FIGURE 2-1:
Histogram.
25
Ambient Temperature (°C)
Open Loop Phase (°)
3
2
1
0
-1
-2
-3
-4
-5
-6
-7
0%
400
Percentage of Occurrences
22%
Input Bias Current (pA)
FIGURE 2-6:
Histogram.
Input Bias Current at +125°C
 2003 Microchip Technology Inc.
MCP6001/2/4
Note: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +5.5V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2,
RL = 10 kΩ to VDD/2, and CL = 60 pF.
18%
Percentage of Occurrences
100
2%
Frequency (Hz)
FIGURE 2-7:
vs. Frequency.
Input Noise Voltage Density
FIGURE 2-10:
Histogram.
-100
Input Offset Voltage (µV)
Input Offset Voltage (µV)
12
Input Offset Voltage Drift
200
VDD = 1.8V
-200
-300
-400
TA = -40°C
TA = +25°C
TA = +85°C
TA = +125°C
-500
-600
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-0.2
-0.4
-700
150
100
VDD = 5.5V
50
0
VDD = 1.8V
-50
-100
-150
V CM = VSS
-200
0.0
0.5
1.0
1.5
Common Mode Input Voltage (V)
VDD = 5.5V
-100
-200
-300
TA = -40°C
TA = +25°C
TA = +85°C
TA = +125°C
-400
-500
-600
-700
-0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Common Mode Input Voltage (V)
FIGURE 2-9:
Input Offset Voltage vs.
Common Mode Input Voltage at VDD = 5.5V.
 2003 Microchip Technology Inc.
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Output Voltage (V)
FIGURE 2-11:
Output Voltage.
Output Short Circuit Current
(mA)
FIGURE 2-8:
Input Offset Voltage vs.
Common Mode Input Voltage at VDD = 1.8V.
Input Offset Voltage (µV)
8
Input Offset Voltage Drift (µV/°C)
0
0
10
100k
6
10k
1.E+05
4
1k
1.E+04
2
0%
1.E+03
100
4%
0
10
6%
-2
1
1.E+02
8%
-4
0.1
f = 0.1 to 10 Hz
1.E+01
10%
-6
1.E+00
12%
-8
1.E-01
14%
-10
Eni = 6.1 µVP-P,
10
1225 Samples
VCM = VSS
TA = -40°C to +125°C
16%
-12
Input Noise Voltage Density
(nV/—Hz)
1,000
Input Offset Voltage vs.
35
30
+ISC, V DD = 5.5V
25
20
-ISC, V DD = 5.5V
15
-ISC, VDD = 1.8V
10
5
+ISC, VDD = 1.8V
0
-50
-25
0
25
50
75
100
125
Ambient Temperature (°C)
FIGURE 2-12:
Output Short-Circuit Current
vs. Ambient Temperature.
DS21733D-page 5
MCP6001/2/4
Note: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +5.5V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2,
RL = 10 kΩ to VDD/2, and CL = 60 pF.
1.0
0.08
0.8
Output Voltage (20 mV/div)
0.9
Slew Rate (V/µs)
G = +1 V/V
Falling Edge, VDD = 5.5V
Falling Edge, VDD = 1.8V
0.7
0.6
0.5
Rising Edge, VDD = 5.5V
Rising Edge, VDD = 1.8V
0.4
0.3
0.2
0.1
0.0
-50
-25
0
25
50
75
100
0.02
0.00
-0. 02
-0. 04
-0. 06
-0. 08
0.E+00
Slew Rate vs. Ambient
1.E-06
2.E-06
3.E-06
4.E-06
1,000
6.E-06
7.E-06
8.E-06
VDD - V OH
VOL - VSS
10
1.E-05
G = +1 V/V
V DD = 5.0V
4.5
100
9.E-06
Small Signal Non-Inverting
5.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
1
10µ
1.E-05
1.E-04
1.E-03
100µ
1m
1.E-02
10m
0.5
0.0
0.E+00
1.E-05
2.E-05
3.E-05
4.E-05
Output Current Magnitude (A)
5.E-05
6.E-05
7.E-05
8.E-05
9.E-05
1.E-04
Time (10 µs/div)
FIGURE 2-14:
Output Voltage Headroom
vs. Output Current Magnitude.
FIGURE 2-17:
Pulse Response.
Large Signal Non-Inverting
160
10
TA = +125°C
140
VDD = 5.5V
Quiescent Current
per amplifier (mA)
Output Voltage Swing (VP-P)
5.E-06
Time (1 µs/div)
FIGURE 2-16:
Pulse Response.
Output Voltage (V)
Output Voltage Headroom (mV)
0.04
125
Ambient Temperature (°C)
FIGURE 2-13:
Temperature.
0.06
VDD = 1.8V
1
120
TA = 85°C
100
TA = 25°C
80
TA = -40°C
60
40
20
0.1
1.E+03
1k
1.E+04
1.E+05
10k
100k
1.E+06
1M
Frequency (Hz)
FIGURE 2-15:
Frequency.
DS21733D-page 6
Output Voltage Swing vs.
VCM = VDD - 0.5V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Power Supply Voltage (V)
FIGURE 2-18:
Quiescent Current vs.
Power Supply Voltage.
 2003 Microchip Technology Inc.
MCP6001/2/4
3.0
APPLICATION INFORMATION
–
The MCP6001/2/4 family of op amps is manufactured
using Microchip’s state-of-the-art CMOS process and
is specifically designed for low cost, low power and
general-purpose applications. The low supply voltage,
low quiescent current and wide bandwidth makes the
MCP6001/2/4 ideal for battery-powered applications.
This device has high phase margin, which makes it
stable for larger capacitive load applications.
3.1
RIN
VIN
( Maximum expected V IN ) – V DD
R IN ≥ -----------------------------------------------------------------------------2 mA
V SS – ( Minimum expected V IN )
R IN ≥ --------------------------------------------------------------------------2 mA
Rail-to-Rail Input
The MCP6001/2/4 op amp is designed to prevent
phase reversal when the input pins exceed the supply
voltages. Figure 3-1 shows the input voltage exceeding
the supply voltage without any phase reversal.
FIGURE 3-2:
Resistor (RIN).
3.2
Input, Output Voltages (V)
6
VIN
5
VOUT
MCP600X
+
Input Current Limiting
Rail-to-Rail Output
The output voltage range of the MCP6001/2/4 op amp
is VDD - 25 mV (min.) and VSS + 25 mV (max.) when
RL = 10 kΩ is connected to VDD/2 and VDD = 5.5V.
Refer to Figure 2-14 for more information.
VDD = 5.0V
G = +2 V/V
VOUT
4
3
3.3
2
1
0
-1
0.E+00
1.E-05
2.E-05
3.E-05
4.E-05
5.E-05
6.E-05
7.E-05
8.E-05
9.E-05
1.E-04
Time (10 µs/div)
FIGURE 3-1:
The MCP6001/2/4 Shows
No Phase Reversal.
The input stage of the MCP6001/2/4 op amp uses two
differential input stages in parallel; one operates at low
common mode input voltage (VCM) and the other at
high VCM. With this topology, the device operates with
VCM up to 300 mV above VDD and 300 mV below VSS.
The Input Offset Voltage is measured at
VCM = VSS - 300 mV and V DD + 300 mV to ensure
proper operation.
Input voltages that exceed the input voltage range
(VSS - 0.3V to VDD + 0.3V at 25°C) can cause excessive current to flow into or out of the input pins. Current
beyond ±2 mA can cause reliability problems. Applications that exceed this rating must be externally limited
with a resistor, as shown in Figure 3-2.
Capacitive Loads
Driving large capacitive loads can cause stability problems for voltage feedback op amps. As the load capacitance increases, the feedback loop’s phase margin
decreases, and the closed loop bandwidth is reduced.
This produces gain peaking in the frequency response,
with overshoot and ringing in the step response. A unity
gain buffer (G = +1) is the most sensitive to capacitive
loads, but all gains show the same general behavior.
When driving large capacitive loads with these op
amps (e.g., > 100 pF when G = +1), a small series
resistor at the output (RISO in Figure 3-3) improves the
feedback loop’s phase margin (stability) by making the
output load resistive at higher frequencies. It does not,
however, improve the bandwidth.
–
VIN
MCP600X
+
RISO
VOUT
CL
FIGURE 3-3:
Output resistor, RISO
stabilizes large capacitive loads.
To select RISO, check the frequency response peaking
(or step response overshoot) on the bench (or with the
MCP6001/2/4 Spice macro model). If the response is
reasonable, you do not need R ISO. Otherwise, start
RISO at 1 kΩ and modify its value until the response is
reasonable.
 2003 Microchip Technology Inc.
DS21733D-page 7
MCP6001/2/4
3.4
Supply Bypass
3.6
With this family of operation amplifiers, the power supply pin (VDD for single supply) should have a local
bypass capacitor (i.e., 0.01 µF to 0.1 µF) within 2 mm
for good high frequency performance. It also needs a
bulk capacitor (i.e., 1 µF or larger) within 100 mm to
provide large, slow currents. This bulk capacitor can be
shared with other parts.
3.5
Application Circuits
3.6.1
UNITY GAIN BUFFER
The rail-to-rail input and output capability of the
MCP6001/2/4 op amp is ideal for unity-gain buffer
applications. The low quiescent current and wide bandwidth makes the device suitable for a buffer configuration in an instrumentation amplifier circuit, as shown in
Figure 3-5.
PCB Surface Leakage
In applications where low input bias current is critical,
PCB (printed circuit board) surface leakage effects
need to be considered. Surface leakage is caused by
humidity, dust or other contamination on the board.
Under low humidity conditions, a typical resistance
between nearby traces is 1012Ω. A 5V difference would
cause 5 pA, if current-to-flow; this is greater than the
MCP6001/2/4 family’s bias current at 25°C (1 pA, typ).
The easiest way to reduce surface leakage is to use a
guard ring around sensitive pins (or traces). The guard
ring is biased at the same voltage as the sensitive pin.
An example of this type of layout is shown in
Figure 3-4.
VIN-
VIN+
VIN1
R1
R2
MCP6002
+ 1/2
VOUT
MCP6001
+
VIN2
R2
MCP6002
+ 1/2
R1
R1 = 20 kΩ
R2 = 10 kΩ
VREF
R
V OUT = ( V IN2 – V IN1 ) • -----1- + V REF
R2
VSS
FIGURE 3-5:
Instrumentation Amplifier
with Unity Gain Buffer Inputs.
3.6.2
Guard Ring
FIGURE 3-4:
for Inverting Gain.
1.
2.
Example Guard Ring Layout
Non-inverting Gain and Unity Gain Buffer:
a. Connect the non-inverting pin (VIN+) to the
input with a wire that does not touch the pcb
surface.
b. Connect the guard ring to the inverting input
pin (VIN–). This biases the guard ring to the
common mode input voltage.
Inverting and Transimpedance Gain Amplifiers
(convert current to voltage, such as photo detectors):
a. Connect the guard ring to the non-inverting
input pin (VIN+). This biases the guard ring
to the same reference voltage as the op
amp (e.g., VDD/2 or ground).
b. Connect the inverting pin (VIN–) to the input
with a wire that does not touch the PCB
surface.
ACTIVE LOW-PASS FILTER
The MCP6001/2/4 op amp’s low input bias current
makes it possible for the designer to use larger resistors and smaller capacitors for active low-pass filter
applications. However, as the resistance increases, the
noise generated also increases. Parasitic capacitances
and the large value resistors could also modify the frequency response. These trade-offs need to be
considered when selecting circuit elements.
It is possible to have a filter cutoff frequency as high as
1/10th of the op amp bandwidth (100 kHz). Figure 3-6
shows a second-order butterworth filter with 100 kHz
cutoff frequency and a gain of +1V/V.
The component values were
Microchip’s FilterLab® software.
using
100 pF
VIN 14.3 kΩ 53.6 kΩ
+
MCP6002
33 pF
FIGURE 3-6:
Pass Filter.
DS21733D-page 8
selected
-
VOUT
Active Second-Order Low-
 2003 Microchip Technology Inc.
MCP6001/2/4
3.6.3
PEAK DETECTOR
can be determined. For example, with op amp short-circuit current of ISC = 25 mA and load capacitor of
C1 = 0.1 µF, then:
The MCP6001/2/4 op amp has a high input impedance,
rail-to-rail input and output and low input bias current,
which makes this device suitable for a peak detector
applications. Figure 3-7 shows a peak detector circuit
with clear and sample switches. The peak-detection
cycle uses a clock (CLK), as shown in Figure 3-7.
EQUATION
dV C1
I SC = C 1 × -----------dt
dV C1
I SC
------------- = ------dt
C1
At the rising edge of CLK, Sample Switch closes to
begin sampling. The peak voltage stored on C1 is sampled to C2 for a sample time defined by tSAMP. At the
end of the sample time (falling edge of Sample Signal),
Clear Signal goes high and closes the Clear Switch.
When the Clear Switch closes, C1 discharges through
R1 for a time defined by tCLEAR. At the end of the clear
time (falling edge of Clear Signal), op amp A begins to
store the peak value of VIN on C1 for a time defined by
tDETECT.
25mA
= --------------0.1µF
dV C1
------------ = 250mV
----------------dt
µs
This voltage change rate is less than the MCP6001/2/4
slew rate of 600 mV/µs. When the input voltage swings
below the voltage across C1, D1 becomes reversebiased, which opens the feedback loop and rails the
amplifier. When the input voltage increases, the amplifier recovers at its slew rate. Based on the rate of voltage change shown in the above equation, it takes an
extended period of time to charge a 0.1 µF capacitor.
The capacitors need to be selected so that the circuit is
not limited by the amplifier slew rate. Therefore, the
capacitors should be less than 40 µF and a stabilizing
resistor (RISO) needs to be properly selected. Refer to
Section 3.3, “Capacitive Load and Stability”, for op amp
stability.
In order to define the tSAMP and tCLEAR, it is necessary
to determine the capacitor charging and discharging
period. The capacitor charging time is limited by the
amplifier source current, while the discharging time (τ)
is defined using R1 (τ = R1*C1). tDETECT is the time that
the input signal is sampled on C 1, and is dependent on
the input voltage change frequency.
The op amp output current limit, and the size of the
storage capacitors (both C1 and C2), could create slewing limitations as the input voltage (VIN) increases. Current through a capacitor is dependent on the size of the
capacitor and the rate of voltage change. From this
relationship, the rate of voltage change or the slew rate
VIN
+
D1
RISO VC1
MCP6002
1/2
–
A
C1
R1
RISO VC2
+
MCP6002
– 1/2
B
C2
+
MCP6001
–
C
VOUT
Sample
Switch
Clear
Switch
tSAMP
Sample Signal
tCLEAR
Clear Signal
tDETECT
CLK
FIGURE 3-7:
Peak Detector with Clear and Sample CMOS Analog Switches.
 2003 Microchip Technology Inc.
DS21733D-page 9
MCP6001/2/4
4.0
DESIGN TOOLS
Microchip provides the basic design tools needed for
the MCP6001/2/4 family of op amps.
4.1
SPICE Macro Model
The latest Spice macro model for the MCP6001/2/4
operational amplifiers (op amps) is available on our
website at www.microchip.com. This model is intended
as an initial design tool that works well in the op amp’s
linear region of operation at room temperature. See the
model file for information on its capabilities.
Bench testing is a very important part of any design and
cannot be replaced with simulations. Also, simulation
results using this macro model need to be validated by
comparing them to the data sheet specifications and
characteristic curves.
4.2
FilterLab® Software
FilterLab is an innovative software tool that simplifies
analog active filter (using op amps) design. Available at
no cost from our website at www.microchip.com, the
FilterLab software active filter software design tool provides full schematic diagrams of the filter circuit with
component values. It also outputs the filter circuit in
SPICE format, which can be used with the macro
model to simulate actual filter performance.
DS21733D-page 10
 2003 Microchip Technology Inc.
MCP6001/2/4
5.0
PACKAGING INFORMATION
5.1
Package Marking Information
5-Lead SC-70 (MCP6001)
Example:
XNN
YWW
A57
307
Example:(MCP6001 I-Temp Pinout)
5-Lead SOT-23 (MCP6001)
4
5
Device
XXNN
1
2
MCP6001
AANN
CDNN
MCP6001R
ADNN
CENN
AFNN
CFNN
MCP6001U
3
8-Lead PDIP (300 mil)
Note:
AA07
1
2
Example:
MCP6002
I/P057
0307
8-Lead SOIC (150 mil)
Example:
XXXXXXXX
XXXXYYWW
MCP6002
I/SN0307
NNN
057
8-Lead MSOP
Note:
Example:
XXXXXX
6002
YWWNNN
307057
Legend:
XX...X
YY
WW
NNN
3
Applies to 5-Lead SOT-23.
XXXXXXXX
XXXXXNNN
YYWW
*
4
5
Industrial
Extended
Temp Code Temp Code
Customer specific information*
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line thus limiting the number of available characters
for customer specific information.
Standard marking consists of Microchip part number, year code, week code, traceability code (facility
code, mask rev#, and assembly code). For marking beyond this, certain price adders apply. Please
check with your Microchip Sales Office.
 2003 Microchip Technology Inc.
DS21733D-page 11
MCP6001/2/4
Package Marking Information (Continued)
14-Lead PDIP (300 mil) (MCP6004)
XXXXXXXXXXXXXX
XXXXXXXXXXXXXX
YYWWNNN
14-Lead SOIC (150 mil) (MCP6004)
Example:
MCP6004-I/P
0307057
Example:
XXXXXXXXXX
XXXXXXXXXX
YYWWNNN
14-Lead TSSOP (MCP6004)
MCP6004ISL
0307057
Example:
XXXXXX
YYWW
6004ST
0307
NNN
057
DS21733D-page 12
 2003 Microchip Technology Inc.
MCP6001/2/4
5-Lead Plastic Package (SC-70)
E
E1
D
p
B
n
1
Q1
A2
c
A
A1
L
Units
Dimension Limits
n
p
Number of Pins
Pitch
Overall Height
Molded Package Thickness
Standoff
Overall Width
Molded Package Width
Overall Length
Foot Length
Top of Molded Pkg to Lead Shoulder
Lead Thickness
Lead Width
A
A2
A1
E
E1
D
L
Q1
c
B
MIN
.031
.031
.000
.071
.045
.071
.004
.004
.004
.006
INCHES
NOM
5
.026 (BSC)
MAX
.043
.039
.004
.094
.053
.087
.012
.016
.007
.012
MILLIMETERS*
NOM
5
0.65 (BSC)
0.80
0.80
0.00
1.80
1.15
1.80
0.10
0.10
0.10
0.15
MIN
MAX
1.10
1.00
0.10
2.40
1.35
2.20
0.30
0.40
0.18
0.30
*Controlling Parameter
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not
exceed .005" (0.127mm) per side.
JEITA (EIAJ) Standard: SC-70
Drawing No. C04-061
 2003 Microchip Technology Inc.
DS21733D-page 13
MCP6001/2/4
5-Lead Plastic Small Outline Transistor (OT) (SOT23)
E
E1
p
B
p1
n
D
1
α
c
A
Units
Dimension Limits
n
Number of Pins
p
Pitch
p1
Outside lead pitch (basic)
Overall Height
Molded Package Thickness
Standoff §
Overall Width
Molded Package Width
Overall Length
Foot Length
Foot Angle
Lead Thickness
Lead Width
Mold Draft Angle Top
Mold Draft Angle Bottom
* Controlling Parameter
§ Significant Characteristic
φ
L
β
A
A2
A1
E
E1
D
L
φ
c
B
α
β
MIN
.035
.035
.000
.102
.059
.110
.014
0
.004
.014
0
0
A2
A1
INCHES*
NOM
5
.038
.075
.046
.043
.003
.110
.064
.116
.018
5
.006
.017
5
5
MAX
.057
.051
.006
.118
.069
.122
.022
10
.008
.020
10
10
MILLIMETERS
NOM
5
0.95
1.90
0.90
1.18
0.90
1.10
0.00
0.08
2.60
2.80
1.50
1.63
2.80
2.95
0.35
0.45
0
5
0.09
0.15
0.35
0.43
0
5
0
5
MIN
MAX
1.45
1.30
0.15
3.00
1.75
3.10
0.55
10
0.20
0.50
10
10
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MO-178
Drawing No. C04-091
DS21733D-page 14
 2003 Microchip Technology Inc.
MCP6001/2/4
8-Lead Plastic Dual In-line (P) – 300 mil (PDIP)
E1
D
2
n
1
α
E
A2
A
L
c
A1
β
B1
p
eB
B
Units
Dimension Limits
n
p
Number of Pins
Pitch
Top to Seating Plane
Molded Package Thickness
Base to Seating Plane
Shoulder to Shoulder Width
Molded Package Width
Overall Length
Tip to Seating Plane
Lead Thickness
Upper Lead Width
Lower Lead Width
Overall Row Spacing
Mold Draft Angle Top
Mold Draft Angle Bottom
* Controlling Parameter
§ Significant Characteristic
A
A2
A1
E
E1
D
L
c
§
B1
B
eB
α
β
MIN
.140
.115
.015
.300
.240
.360
.125
.008
.045
.014
.310
5
5
INCHES*
NOM
MAX
8
.100
.155
.130
.170
.145
.313
.250
.373
.130
.012
.058
.018
.370
10
10
.325
.260
.385
.135
.015
.070
.022
.430
15
15
MILLIMETERS
NOM
8
2.54
3.56
3.94
2.92
3.30
0.38
7.62
7.94
6.10
6.35
9.14
9.46
3.18
3.30
0.20
0.29
1.14
1.46
0.36
0.46
7.87
9.40
5
10
5
10
MIN
MAX
4.32
3.68
8.26
6.60
9.78
3.43
0.38
1.78
0.56
10.92
15
15
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-001
Drawing No. C04-018
 2003 Microchip Technology Inc.
DS21733D-page 15
MCP6001/2/4
8-Lead Plastic Small Outline (SN) – Narrow, 150 mil (SOIC)
E
E1
p
D
2
B
n
1
h
α
45°
c
A2
A
φ
β
L
Units
Dimension Limits
n
p
Number of Pins
Pitch
Overall Height
Molded Package Thickness
Standoff §
Overall Width
Molded Package Width
Overall Length
Chamfer Distance
Foot Length
Foot Angle
Lead Thickness
Lead Width
Mold Draft Angle Top
Mold Draft Angle Bottom
* Controlling Parameter
§ Significant Characteristic
A
A2
A1
E
E1
D
h
L
φ
c
B
α
β
MIN
.053
.052
.004
.228
.146
.189
.010
.019
0
.008
.013
0
0
A1
INCHES*
NOM
8
.050
.061
.056
.007
.237
.154
.193
.015
.025
4
.009
.017
12
12
MAX
.069
.061
.010
.244
.157
.197
.020
.030
8
.010
.020
15
15
MILLIMETERS
NOM
8
1.27
1.35
1.55
1.32
1.42
0.10
0.18
5.79
6.02
3.71
3.91
4.80
4.90
0.25
0.38
0.48
0.62
0
4
0.20
0.23
0.33
0.42
0
12
0
12
MIN
MAX
1.75
1.55
0.25
6.20
3.99
5.00
0.51
0.76
8
0.25
0.51
15
15
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-012
Drawing No. C04-057
DS21733D-page 16
 2003 Microchip Technology Inc.
MCP6001/2/4
8-Lead Plastic Micro Small Outline Package (MS) (MSOP)
E
E1
p
D
2
B
n
1
α
A2
A
c
φ
A1
(F)
L
β
Units
Dimension Limits
n
p
MIN
INCHES
NOM
MAX
MILLIMETERS*
NOM
8
0.65 BSC
0.75
0.85
0.00
4.90 BSC
3.00 BSC
3.00 BSC
0.40
0.60
0.95 REF
0°
0.08
0.22
5°
5°
-
MIN
8
Number of Pins
.026 BSC
Pitch
A
.043
Overall Height
A2
.030
.033
.037
Molded Package Thickness
A1
.006
.000
Standoff
E
.193 TYP.
Overall Width
E1
.118 BSC
Molded Package Width
D
.118 BSC
Overall Length
L
.016
.024
.031
Foot Length
Footprint (Reference)
F
.037 REF
φ
Foot Angle
0°
8°
c
Lead Thickness
.003
.006
.009
B
.009
.012
.016
Lead Width
α
5°
15°
Mold Draft Angle Top
β
5°
15°
Mold Draft Angle Bottom
*Controlling Parameter
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not
exceed .010" (0.254mm) per side.
MAX
1.10
0.95
0.15
0.80
8°
0.23
0.40
15°
15°
JEDEC Equivalent: MO-187
Drawing No. C04-111
 2003 Microchip Technology Inc.
DS21733D-page 17
MCP6001/2/4
14-Lead Plastic Dual In-line (P) – 300 mil (PDIP)
E1
D
2
n
1
α
E
A2
A
L
c
A1
B1
β
eB
p
B
Units
Dimension Limits
n
p
MIN
INCHES*
NOM
14
.100
.155
.130
MAX
MILLIMETERS
NOM
14
2.54
3.56
3.94
2.92
3.30
0.38
7.62
7.94
6.10
6.35
18.80
19.05
3.18
3.30
0.20
0.29
1.14
1.46
0.36
0.46
7.87
9.40
5
10
5
10
MIN
Number of Pins
Pitch
Top to Seating Plane
A
.140
.170
Molded Package Thickness
A2
.115
.145
Base to Seating Plane
A1
.015
Shoulder to Shoulder Width
E
.300
.313
.325
Molded Package Width
E1
.240
.250
.260
Overall Length
D
.740
.750
.760
Tip to Seating Plane
L
.125
.130
.135
c
Lead Thickness
.008
.012
.015
Upper Lead Width
B1
.045
.058
.070
Lower Lead Width
B
.014
.018
.022
Overall Row Spacing
§
eB
.310
.370
.430
α
Mold Draft Angle Top
5
10
15
β
Mold Draft Angle Bottom
5
10
15
* Controlling Parameter
§ Significant Characteristic
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-001
Drawing No. C04-005
DS21733D-page 18
MAX
4.32
3.68
8.26
6.60
19.30
3.43
0.38
1.78
0.56
10.92
15
15
 2003 Microchip Technology Inc.
MCP6001/2/4
14-Lead Plastic Small Outline (SL) – Narrow, 150 mil (SOIC)
E
E1
p
D
2
B
n
1
α
h
45°
c
A2
A
φ
A1
L
β
Units
Dimension Limits
n
p
Number of Pins
Pitch
Overall Height
Molded Package Thickness
Standoff §
Overall Width
Molded Package Width
Overall Length
Chamfer Distance
Foot Length
Foot Angle
Lead Thickness
Lead Width
Mold Draft Angle Top
Mold Draft Angle Bottom
* Controlling Parameter
§ Significant Characteristic
A
A2
A1
E
E1
D
h
L
φ
c
B
α
β
MIN
.053
.052
.004
.228
.150
.337
.010
.016
0
.008
.014
0
0
INCHES*
NOM
14
.050
.061
.056
.007
.236
.154
.342
.015
.033
4
.009
.017
12
12
MAX
.069
.061
.010
.244
.157
.347
.020
.050
8
.010
.020
15
15
MILLIMETERS
NOM
14
1.27
1.35
1.55
1.32
1.42
0.10
0.18
5.79
5.99
3.81
3.90
8.56
8.69
0.25
0.38
0.41
0.84
0
4
0.20
0.23
0.36
0.42
0
12
0
12
MIN
MAX
1.75
1.55
0.25
6.20
3.99
8.81
0.51
1.27
8
0.25
0.51
15
15
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-012
Drawing No. C04-065
 2003 Microchip Technology Inc.
DS21733D-page 19
MCP6001/2/4
14-Lead Plastic Thin Shrink Small Outline (ST) – 4.4 mm (TSSOP)
E
E1
p
D
2
1
n
B
α
A
c
φ
β
A1
L
Units
Dimension Limits
n
p
Number of Pins
Pitch
Overall Height
Molded Package Thickness
Standoff §
Overall Width
Molded Package Width
Molded Package Length
Foot Length
Foot Angle
Lead Thickness
Lead Width
Mold Draft Angle Top
Mold Draft Angle Bottom
* Controlling Parameter
§ Significant Characteristic
A
A2
A1
E
E1
D
L
φ
c
B1
α
β
MIN
.033
.002
.246
.169
.193
.020
0
.004
.007
0
0
INCHES
NOM
14
.026
.035
.004
.251
.173
.197
.024
4
.006
.010
5
5
A2
MAX
.043
.037
.006
.256
.177
.201
.028
8
.008
.012
10
10
MILLIMETERS*
NOM
MAX
14
0.65
1.10
0.85
0.90
0.95
0.05
0.10
0.15
6.25
6.38
6.50
4.30
4.40
4.50
4.90
5.00
5.10
0.50
0.60
0.70
0
4
8
0.09
0.15
0.20
0.19
0.25
0.30
0
5
10
0
5
10
MIN
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.005” (0.127mm) per side.
JEDEC Equivalent: MO-153
Drawing No. C04-087
DS21733D-page 20
 2003 Microchip Technology Inc.
MCP6001/2/4
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
Device
Device:
X
/XX
Temperature
Range
MCP6001T:
MCP6001RT:
MCP6001UT:
MCP6002:
MCP6002T:
MCP6004:
MCP6004T:
Package
Examples:
a)
b)
1 MHz Bandwidth, Low Power Op Amp
(Tape and Reel) (SC-70, SOT-23)
1 MHz Bandwidth, Low Power Op Amp
(Tape and Reel) (SOT-23)
1 MHz Bandwidth, Low Power Op Amp
(Tape and Reel) (SOT-23)
1 MHz Bandwidth, Low Power Op Amp
1 MHz Bandwidth, Low Power Op Amp
(Tape and Reel) (SOIC, MSOP)
1 MHz Bandwidth, Low Power Op Amp
1 MHz ,Bandwidth Low Power Op Amp
(Tape and Reel) (SOIC, MSOP)
c)
d)
e)
a)
b)
c)
Temperature Range:
I
E
= -40°C to +85°C
= -40°C to +125°C
Package:
LT = Plastic Package (SC-70), 5-lead (MCP6001 only)
OT = Plastic Small Outline Transistor (SOT-23), 5-lead
(MCP6001, MCP6001R, MCP6001U)
MS = Plastic MSOP, 8-lead
P
= Plastic DIP (300 mil Body), 8-lead, 14-lead
SN = Plastic SOIC, (150 mil Body), 8-lead
SL = Plastic SOIC (150 mil Body), 14-lead
ST = Plastic TSSOP (4.4mm Body), 14-lead
d)
e)
f)
a)
b)
c)
d)
e)
f)
MCP6001T-I/LT: Tape and Reel, Industrial
Temperature, 5LD SC-70 package
MCP6001T-I/OT: Tape and Reel, Industrial
Temperature, 5LD SOT-23 package.
MCP6001RT-I/OT: Tape and Reel, Industrial
Temperature, 5LD SOT-23 package.
MCP6001UT-E/OT:Tape and Reel, Extended
Temperature, 5LD SOT-23 package.
MCP6001UT-I/OT: Tape and Reel, Industrial
Temperature, 5LD SOT-23 package.
MCP6002-I/MS: Industrial Temperature,
8LD MSOP package.
MCP6002-I/P:
Industrial Temperature,
8LD PDIP package.
MCP6002-E/P:
Extended Temperature,
8LD PDIP package.
MCP6002-I/SN: Industrial Temperature,
8LD SOIC package.
MCP6002T-I/MS: Tape and Reel, Industrial
Temperature, 8LD MSOP package.
MCP6002T-I/SN: Tape and Reel, Industrial
Temperature, 8LD SOIC package.
MCP6004-I/P:
Industrial Temperature,
14LD PDIP package.
MCP6004-I/SL:
Industrial Temperature,,
14LD SOIC package.
MCP6004-E/SL: Extended Temperature,,
14LD SOIC package.
MCP6004-I/ST:
Industrial Temperature,
14LD TSSOP package.
MCP6004T-I/SL: Tape and Reel, Industrial
Temperature, 14LD SOIC package.
MCP6004T-I/ST: Tape and Reel, Industrial
Temperature, 14LD TSSOP package.
Sales and Support
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and
recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1.
2.
3.
Your local Microchip sales office
The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277
The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
 2003 Microchip Technology Inc.
DS21733D-page 21
MCP6001/2/4
NOTES:
DS21733D-page 22
 2003 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is intended through suggestion only
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
No representation or warranty is given and no liability is
assumed by Microchip Technology Incorporated with respect
to the accuracy or use of such information, or infringement of
patents or other intellectual property rights arising from such
use or otherwise. Use of Microchip’s products as critical
components in life support systems is not authorized except
with express written approval by Microchip. No licenses are
conveyed, implicitly or otherwise, under any intellectual
property rights.
Trademarks
The Microchip name and logo, the Microchip logo, KEELOQ,
MPLAB, PIC, PICmicro, PICSTART, PRO MATE and
PowerSmart are registered trademarks of Microchip
Technology Incorporated in the U.S.A. and other countries.
FilterLab, microID, MXDEV, MXLAB, PICMASTER, SEEVAL
and The Embedded Control Solutions Company are
registered trademarks of Microchip Technology Incorporated
in the U.S.A.
Accuron, Application Maestro, dsPIC, dsPICDEM,
dsPICDEM.net, ECONOMONITOR, FanSense, FlexROM,
fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC,
microPort, Migratable Memory, MPASM, MPLIB, MPLINK,
MPSIM, PICC, PICkit, PICDEM, PICDEM.net, PowerCal,
PowerInfo, PowerMate, PowerTool, rfLAB, rfPIC, Select
Mode, SmartSensor, SmartShunt, SmartTel and Total
Endurance are trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
Serialized Quick Turn Programming (SQTP) is a service mark
of Microchip Technology Incorporated in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2003, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received QS-9000 quality system
certification for its worldwide headquarters,
design and wafer fabrication facilities in
Chandler and Tempe, Arizona in July 1999
and Mountain View, California in March 2002.
The Company’s quality system processes and
procedures are QS-9000 compliant for its
PICmicro® 8-bit MCUs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals,
non-volatile memory and analog products. In
addition, Microchip’s quality system for the
design and manufacture of development
systems is ISO 9001 certified.
 2003 Microchip Technology Inc.
DS21733D-page 23
M
WORLDWIDE SALES AND SERVICE
AMERICAS
ASIA/PACIFIC
Corporate Office
Australia
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200 Fax: 480-792-7277
Technical Support: 480-792-7627
Web Address: http://www.microchip.com
Microchip Technology Australia Pty Ltd
Marketing Support Division
Suite 22, 41 Rawson Street
Epping 2121, NSW
Australia
Tel: 61-2-9868-6733 Fax: 61-2-9868-6755
Atlanta
3780 Mansell Road, Suite 130
Alpharetta, GA 30022
Tel: 770-640-0034 Fax: 770-640-0307
China - Beijing
2 Lan Drive, Suite 120
Westford, MA 01886
Tel: 978-692-3848 Fax: 978-692-3821
Microchip Technology Consulting (Shanghai)
Co., Ltd., Beijing Liaison Office
Unit 915
Bei Hai Wan Tai Bldg.
No. 6 Chaoyangmen Beidajie
Beijing, 100027, No. China
Tel: 86-10-85282100 Fax: 86-10-85282104
Chicago
China - Chengdu
333 Pierce Road, Suite 180
Itasca, IL 60143
Tel: 630-285-0071 Fax: 630-285-0075
Microchip Technology Consulting (Shanghai)
Co., Ltd., Chengdu Liaison Office
Rm. 2401-2402, 24th Floor,
Ming Xing Financial Tower
No. 88 TIDU Street
Chengdu 610016, China
Tel: 86-28-86766200 Fax: 86-28-86766599
Boston
Dallas
4570 Westgrove Drive, Suite 160
Addison, TX 75001
Tel: 972-818-7423 Fax: 972-818-2924
Detroit
Tri-Atria Office Building
32255 Northwestern Highway, Suite 190
Farmington Hills, MI 48334
Tel: 248-538-2250 Fax: 248-538-2260
Kokomo
2767 S. Albright Road
Kokomo, IN 46902
Tel: 765-864-8360 Fax: 765-864-8387
Los Angeles
18201 Von Karman, Suite 1090
Irvine, CA 92612
Tel: 949-263-1888 Fax: 949-263-1338
Phoenix
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7966 Fax: 480-792-4338
San Jose
Microchip Technology Inc.
2107 North First Street, Suite 590
San Jose, CA 95131
Tel: 408-436-7950 Fax: 408-436-7955
Toronto
6285 Northam Drive, Suite 108
Mississauga, Ontario L4V 1X5, Canada
Tel: 905-673-0699 Fax: 905-673-6509
China - Fuzhou
Microchip Technology Consulting (Shanghai)
Co., Ltd., Fuzhou Liaison Office
Unit 28F, World Trade Plaza
No. 71 Wusi Road
Fuzhou 350001, China
Tel: 86-591-7503506 Fax: 86-591-7503521
China - Hong Kong SAR
Microchip Technology Hongkong Ltd.
Unit 901-6, Tower 2, Metroplaza
223 Hing Fong Road
Kwai Fong, N.T., Hong Kong
Tel: 852-2401-1200 Fax: 852-2401-3431
China - Shanghai
Microchip Technology Consulting (Shanghai)
Co., Ltd.
Room 701, Bldg. B
Far East International Plaza
No. 317 Xian Xia Road
Shanghai, 200051
Tel: 86-21-6275-5700 Fax: 86-21-6275-5060
China - Shenzhen
Microchip Technology Consulting (Shanghai)
Co., Ltd., Shenzhen Liaison Office
Rm. 1812, 18/F, Building A, United Plaza
No. 5022 Binhe Road, Futian District
Shenzhen 518033, China
Tel: 86-755-82901380 Fax: 86-755-8295-1393
China - Qingdao
Rm. B505A, Fullhope Plaza,
No. 12 Hong Kong Central Rd.
Qingdao 266071, China
Tel: 86-532-5027355 Fax: 86-532-5027205
India
Microchip Technology Inc.
India Liaison Office
Marketing Support Division
Divyasree Chambers
1 Floor, Wing A (A3/A4)
No. 11, O’Shaugnessey Road
Bangalore, 560 025, India
Tel: 91-80-2290061 Fax: 91-80-2290062
Japan
Microchip Technology Japan K.K.
Benex S-1 6F
3-18-20, Shinyokohama
Kohoku-Ku, Yokohama-shi
Kanagawa, 222-0033, Japan
Tel: 81-45-471- 6166 Fax: 81-45-471-6122
Korea
Microchip Technology Korea
168-1, Youngbo Bldg. 3 Floor
Samsung-Dong, Kangnam-Ku
Seoul, Korea 135-882
Tel: 82-2-554-7200 Fax: 82-2-558-5934
Singapore
Microchip Technology Singapore Pte Ltd.
200 Middle Road
#07-02 Prime Centre
Singapore, 188980
Tel: 65-6334-8870 Fax: 65-6334-8850
Taiwan
Microchip Technology (Barbados) Inc.,
Taiwan Branch
11F-3, No. 207
Tung Hua North Road
Taipei, 105, Taiwan
Tel: 886-2-2717-7175 Fax: 886-2-2545-0139
EUROPE
Austria
Microchip Technology Austria GmbH
Durisolstrasse 2
A-4600 Wels
Austria
Tel: 43-7242-2244-399
Fax: 43-7242-2244-393
Denmark
Microchip Technology Nordic ApS
Regus Business Centre
Lautrup hoj 1-3
Ballerup DK-2750 Denmark
Tel: 45-4420-9895 Fax: 45-4420-9910
France
Microchip Technology SARL
Parc d’Activite du Moulin de Massy
43 Rue du Saule Trapu
Batiment A - ler Etage
91300 Massy, France
Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79
Germany
Microchip Technology GmbH
Steinheilstrasse 10
D-85737 Ismaning, Germany
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Italy
Microchip Technology SRL
Via Quasimodo, 12
20025 Legnano (MI)
Milan, Italy
Tel: 39-0331-742611 Fax: 39-0331-466781
United Kingdom
Microchip Ltd.
505 Eskdale Road
Winnersh Triangle
Wokingham
Berkshire, England RG41 5TU
Tel: 44-118-921-5869 Fax: 44-118-921-5820
05/30/03
DS21733D-page 24
 2003 Microchip Technology Inc.