ONSEMI NTD5865NL-1G

NTD5865NL
N-- Channel Power MOSFET
60 V, 40 A, 16 mΩ
Features
Low Gate Charge
Fast Switching
High Current Capability
100% Avalanche Tested
These Devices are Pb--Free, Halogen Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Value
Unit
Drain--to--Source Voltage
VDSS
60
V
Gate--to--Source Voltage -- Continuous
VGS
20
V
Gate--to--Source Voltage
-- Non--Repetitive (tp < 10 ms)
VGS
30
V
ID
40
A
Continuous Drain
Current (RθJC)
Power Dissipation
(RθJC)
TC = 25C
Steady
State
Pulsed Drain Current
TC = 100C
TC = 25C
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain--to--Source
Avalanche Energy
(L =
0.1 mH)
Lead Temperature for Soldering Purposes
(1/8 from case for 10 s)
26
PD
52
RDS(on) MAX
IDM
137
A
TJ, Tstg
-- 55 to
150
C
IS
40
A
EAS
36
mJ
IAS
27
A
TL
260
C
40 A
19 mΩ @ 4.5 V
D
G
S
N--CHANNEL MOSFET
4
4
THERMAL RESISTANCE MAXIMUM RATINGS
Value
Unit
Junction--to--Case (Drain)
RθJC
2.4
C/W
Junction--to--Ambient -- Steady State (Note 1)
RθJA
42
1 2
3
DPAK
CASE 369AA
(Surface Mount)
STYLE 2
1
2
3
IPAK
CASE 369D
(Straight Lead)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
YWW
58
65NLG
Symbol
1. Surface--mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [2 oz] including traces.
ID MAX
16 mΩ @ 10 V
W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Parameter
V(BR)DSS
60 V
Symbol
Parameter
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2
1 Drain 3
Gate Source
4
Drain
YWW
58
65NLG





1 2 3
Gate Drain Source
Y
= Year
WW
= Work Week
5865NL = Device Code
G
= Pb--Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
 Semiconductor Components Industries, LLC, 2010
June, 2010 -- Rev. 1
1
Publication Order Number:
NTD5865NL/D
NTD5865NL
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Drain--to--Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
Drain--to--Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
V
55
TJ = 25C
Zero Gate Voltage Drain Current
IDSS
Gate--to--Source Leakage Current
IGSS
VDS = 0 V, VGS = 20 V
VGS(TH)
VGS = VDS, ID = 250 mA
VGS = 0 V,
VDS = 60 V
mV/C
1.0
TJ = 150C
mA
100
100
nA
2.0
V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
1.0
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain--to--Source On Resistance
RDS(on)
VGS = 10 V, ID = 20 A
13
16
mΩ
Drain--to--Source on Resistance
RDS(on)
VGS = 4.5 V, ID = 20 A
16
19
mΩ
gFS
VDS = 15 V, ID = 20 A
15
S
1400
pF
Forward Transconductance
5.6
mV/C
CHARGES, CAPACITANCES AND GATE RESISTANCES
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate--to--Source Charge
QGS
Gate--to--Drain Charge
Total Gate Charge
Gate Resistance
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
137
95
29
nC
VGS = 10 V, VDS = 48 V,
ID = 40 A
1.1
VGS = 4.5 V, VDS = 48 V,
ID = 40 A
15
nC
1.3
Ω
td(on)
8.4
ns
tr
12.4
QGD
QG(TOT)
4
8
RG
SWITCHING CHARACTERISTICS (Note 3)
Turn--On Delay Time
Rise Time
Turn--Off Delay Time
Fall Time
td(off)
VGS = 10 V, VDD = 48 V,
ID = 40 A, RG = 2.5 Ω
tf
26
4.4
DRAIN--SOURCE DIODE CHARACTERISTICS
TJ = 25C
0.95
TJ = 125C
0.85
Forward Diode Voltage
VSD
Reverse Recovery Time
tRR
20
Charge Time
ta
13
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 40 A
VGS = 0 V, dIs/dt = 100 A/ms,
IS = 40 A
QRR
1.2
V
ns
7
13
nC
2. Pulse Test: Pulse Width  300 ms, Duty Cycle  2%.
3. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Package
Shipping†
NTD5865NL--1G
IPAK (Straight Lead)
(Pb--Free)
75 Units / Rail
NTD5865NLT4G
DPAK
(Pb--Free)
2500 / Tape & Reel
Order Number
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
NTD5865NL
TYPICAL CHARACTERISTICS
80
ID, DRAIN CURRENT (A)
50
3.4 V
3.2 V
30
20
3V
10
2.8 V
0
1
2
40
30
TJ = 25C
20
3
4
5
TJ = 125C
1
2
3
4
5
VGS, GATE--TO--SOURCE VOLTAGE (V)
Figure 1. On--Region Characteristics
Figure 2. Transfer Characteristics
TJ = 25C
0.025
0.020
0.015
3
4
5
6
7
8
9
10
VGS, GATE--TO--SOURCE VOLTAGE (V)
0.018
TJ = 25C
VGS = 4.5 V
0.016
0.014
VGS = 10 V
0.012
0.010
5
10
15
20
25
30
35
40
ID, DRAIN CURRENT (A)
Figure 3. On--Resistance vs. Gate Voltage
Figure 4. On--Resistance vs. Drain Current
10000
2.0
1.8
TJ = --55C
VDS, DRAIN--TO--SOURCE VOLTAGE (V)
ID = 40 A
2
50
0
0.030
0.010
60
10
2.6 V
RDS(on), DRAIN--TO--SOURCE RESISTANCE (Ω)
RDS(on), DRAIN--TO--SOURCE RESISTANCE (Ω)
3.6 V
40
VDS  10 V
70
TJ = 25C
4.5 V
60
0
RDS(on), DRAIN--TO--SOURCE RESISTANCE (NORMALIZED)
3.8 V
ID = 40 A
VGS = 10 V
VGS = 0 V
TJ = 150C
1.6
IDSS, LEAKAGE (mA)
ID, DRAIN CURRENT (A)
70
80
4V
VGS = 10 V
1.4
1.2
1.0
1000
TJ = 125C
0.8
0.6
--50
--25
0
25
50
75
100
125
150
100
10
TJ, JUNCTION TEMPERATURE (C)
20
30
40
50
VDS, DRAIN--TO--SOURCE VOLTAGE (V)
Figure 5. On--Resistance Variation with
Temperature
Figure 6. Drain--to--Source Leakage Current
vs. Voltage
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3
60
NTD5865NL
TYPICAL CHARACTERISTICS
10
1800
1600
Ciss
C, CAPACITANCE (pF)
1400
VGS, GATE--TO--SOURCE VOLTAGE (V)
VGS = 0 V
TJ = 25C
1200
1000
800
600
400
200
0
Coss
Crss
0
10
20
30
40
50
60
2
0
VDS = 48 V
ID = 40 A
TJ = 25C
0
5
10
15
20
25
30
40
td(off)
tr
10
VGS = 0 V
35
IS, SOURCE CURRENT (A)
t, TIME (ns)
Qgd
Figure 8. Gate--to--Source vs. Total Charge
td(on)
tf
1
10
TJ = 25C
30
25
20
15
10
5
0
0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.00
100
RG, GATE RESISTANCE (Ω)
VSD, SOURCE--TO--DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
40
VGS = 10 V
SINGLE PULSE
TC = 25C
100 ms
10 ms
10 ms
1 ms
10
dc
1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
ID = 27 A
35
AVALANCHE ENERGY (mJ)
ID, DRAIN CURRENT (A)
Qgs
4
Figure 7. Capacitance Variation
100
0.1
6
Qg, TOTAL GATE CHARGE (nC)
VDD = 48 V
ID = 40 A
VGS = 10 V
100
8
VDS, DRAIN--TO--SOURCE VOLTAGE (V)
1000
1
QT
1
10
100
VDS, DRAIN--TO--SOURCE VOLTAGE (V)
30
25
20
15
10
5
0
25
50
75
100
125
TJ, STARTING JUNCTION TEMPERATURE
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
150
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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4
NTD5865NL
TYPICAL CHARACTERISTICS
RθJC(t) (C/W) EFFECTIVE TRANSIENT
THERMAL RESISTANCE
10
Duty Cycle = 0.5
1
0.1
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
t, PULSE TIME (s)
Figure 13. Thermal Response
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5
0.01
0.1
1
NTD5865NL
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
CASE 369AA--01
ISSUE A
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
--T--
E
R
4
Z
A
S
1
2
DIM
A
B
C
D
E
F
H
J
L
R
S
U
V
Z
H
3
U
F
J
L
D
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
2 PL
0.13 (0.005)
M
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.025 0.035
0.018 0.024
0.030 0.045
0.386 0.410
0.018 0.023
0.090 BSC
0.180 0.215
0.024 0.040
0.020
-----0.035 0.050
0.155
------
T
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.101
5.80
0.228
3.0
0.118
1.6
0.063
6.172
0.243
SCALE 3:1
mm 
inches
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
6
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.63
0.89
0.46
0.61
0.77
1.14
9.80 10.40
0.46
0.58
2.29 BSC
4.57
5.45
0.60
1.01
0.51
-----0.89
1.27
3.93
------
NTD5865NL
PACKAGE DIMENSIONS
IPAK
CASE 369D--01
ISSUE B
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
--T-SEATING
PLANE
K
J
F
D
G
H
3 PL
0.13 (0.005)
M
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
------
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
------
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
T
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For additional information, please contact your local
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NTD5865NL/D