SANYO SBX201C

SBX201C
Ordering number : ENA0628A
SANYO Semiconductors
DATA SHEET
SBX201C
Schottky Barrier Diode
S to X-Band Detector, Mixer Applications
Features
•
•
•
•
Small interterminal capacitance (C=0.25pF typ).
Less parastic components.
Small forward voltage.
Series connection of 2 elements in a small-sized package facilitates high density mounting this goods-applied
equipment to be made smaller.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Reverse Voltage
VR
2
V
Forward Current
IF
50
mA
150
°C
--55 to +150
°C
Junction Temperature
Tj
Storage Temperature
Tstg
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Reverse Voltage
VR
Forward Voltage
VF
RS
Series Resistance
Interterminal Capacitance
C
Conditions
IR=10μA
IF=1mA
IF=10mA
VR=0V, f=1MHz
Ratings
min
typ
Unit
max
2
V
320
mV
14
18
Ω
0.25
0.28
pF
Marking : HH
Note 1) The specifications shown above for each individual diode.
Note 2) Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70208 TI IM / 82907SB TI IM TC-00000839 No. A0628-1/3
SBX201C
Package Dimensions
Electrical Connection
unit : mm (typ)
7013A-015
3
1.5
3
1
1
0.3
1.1
0.4
SANYO : CP
IF -- VF
C -- VR
1.0
Interterminal Capacitance, C -- pF
--25
°C
10
0°C
50°
25° C
0°C C
f=1MHz
Ta
=
Forward Current, IF -- mA
10
7
5
3
2
0.1
7
5
3
2
Top view
2
2
0.95
1 : Cathode
2 : Anode
3 : Anode/Cathode
1.0
7
5
3
2
Reverse series pair
1 : Cathode
2 : Anode
3 : Anode / Cathode
0.1
0.05
0.5
2.5
0.5
2.9
0.01
7
5
3
2
7
5
3
2
0.1
0.001
0
0.1
0.2
0.3
0.4
Forward Voltage, VF -- V
0.5
0.6
IT12705
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Reverse Voltage, VR -- V
1.6
1.8
2.0
IT12707
No. A0628-2/3
SBX201C
S11 Parameters
V=0V/I=0mA
V=0V/I=0.1mA
∠S11
⏐S11⏐
0.996
-8.9
0.992
-18.4
3.00
0.987
4.00
V=0V/I=0.5mA
V=0V/I=1.0mA
V=0V/I=5mA
∠S11
⏐S11⏐
∠S11
⏐S11⏐
∠S11
⏐S11⏐
∠S11
0.844
-8.9
0.381
-2.6
0.092
64.4
0.459
148.1
0.811
-18.6
0.314
-3.7
0.177
82.0
0.517
122.2
-30.0
0.800
-30.6
0.289
-8.8
0.251
76.7
0.582
102.8
0.975
-44.8
0.766
-46.7
0.208
-12.0
0.326
73.6
0.642
87.7
5.00
0.958
-63.9
0.696
-67.8
0.127
12.0
0.403
68.5
0.691
75.0
6.00
0.944
-89.0
0.634
264.7
0.170
54.5
0.477
62.3
0.730
64.3
7.00
0.928
237.1
0.566
227.1
0.274
62.6
0.537
55.9
0.758
55.3
8.00
0.909
195.8
0.538
180.8
0.372
60.7
0.586
49.5
0.780
47.2
39.4
Freq(GHz)
⏐S11⏐
1.00
2.00
9.00
0.910
153.3
0.570
135.1
0.465
54.2
0.630
42.8
0.798
10.00
0.927
116.3
0.646
100.6
0.541
47.4
0.666
36.5
0.809
32.3
11.00
0.925
88.9
0.734
75.9
0.608
42.1
0.694
31.7
0.818
26.8
12.00
0.922
70.5
0.771
62.0
0.651
37.3
0.717
27.6
0.828
22.5
13.00
0.929
56.1
0.814
49.6
0.694
31.8
0.735
22.9
0.833
17.3
14.00
0.919
42.7
0.828
38.0
0.717
24.7
0.740
17.0
0.821
11.2
15.00
0.897
30.9
0.831
27.2
0.731
17.8
0.736
11.1
0.800
5.1
16.00
0.879
20.8
0.843
17.8
0.753
11.9
0.739
6.2
0.787
-0.1
17.00
0.872
13.1
0.834
10.7
0.760
5.1
0.750
0.1
0.792
-5.9
18.00
0.855
5.1
0.826
3.1
0.764
-1.2
0.750
-5.4
0.780
-11.5
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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
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This catalog provides information as of July, 2008. Specifications and information herein are subject
to change without notice.
PS No. A0628-3/3