RE46C800 Carbon Monoxide Detector Companion IC Features: Description: • • • • • • The RE46C800 is a low-power CMOS carbon monoxide detector companion IC. The RE46C800 provides all of the analog, interface, and power management functions for a microcontroller-based CO or toxic gas detector. It is intended for use in both 3V and 9V battery or batterybacked applications. It features a boost regulator and horn driver circuit suitable for driving a piezoelectric horn, a 3.3V regulator for microcontroller voltage regulation, an LED driver, an operational amplifier and an IO for communication with interconnected units. Low Quiescent Current Operation from 2V or 12V 9.8V Boost Regulator Horn Driver LED Driver 3.3V Regulated Voltage for Microcontroller Operation • Internal Operational Amplifiers: - ±1 mV Input Offset Voltage - Rail-to-rail Input and Output - 10 kHz Gain Bandwidth Product - Unity Gain Stable • Bidirectional Alarm Interconnect Applications: • CO Detector • Toxic Gas Detector • Heat Detector Package Types RE46C800 SSOP INP 1 20 HRNEN INN VREF 2 19 HB 3 18 HS OPOUT 9VDET VDD ACDET 4 5 17 16 FEED VSS 6 7 15 LEDEN 8 13 12 LX LEDPWR VBST IO1 IO2 2013 Microchip Technology Inc. 9 10 14 11 VREG IODIR DS25172A-page 1 RE46C800 Functional Block Diagram VDDS 9VDET (5) LX (15) HRNEN (20) BOOST DISABLE PWM CONTROL VBST HB (19) LEVEL SHIFTER I_LIMIT ACDET (7) HS (18) VREG VDD (6) SUPPLY SELECT FEED (17) VDDS ERROR AMPLIFIER VBST (13) VDDS REFERENCE VOLTAGE VREG (12) VREG OV Protection INP (1) VREF GENERATOR VREF (3) INN (2) OPOUT (4) LEDEN (8) VBST LEDPWR (14) IO1 (9) IODIR (11) IO2 (10) DS25172A-page 2 INTERCONNECT VSS (16) 2013 Microchip Technology Inc. RE46C800 1.0 ELECTRICAL CHARACTERISTICS 1.1 Absolute Maximum Ratings† VDD............................................................................................................................................................... -0.3V to 5.5V ESD HBM................................................................................................................................................................1500V ESD MM....................................................................................................................................................................150V VBST, LX ........................................................................................................................................................ -0.3V to 13V Input Voltage Range Except ACDET, 9VDET, FEED, IO1 ..................................................... VIN1 = – .3V to VREG + .3V ACDET, 9VDET Input Voltage Range .....................................................................................VIN2 = – .3V to VBST + .3V FEED Input Voltage Range ........................................................................................................... VINFD = -10V to + 22V IO1 Input Voltage Range....................................................................................................................VINIO1 = -.3 to +15V Input Current except FEED ............................................................................................................................. IIN = 10 mA Operating Temperature .....................................................................................................................TA = -10C to +60C Storage Temperature ..................................................................................................................TSTG = -55C to +125C Maximum Junction Temperature ....................................................................................................................TJ = +15C † Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. DC ELECTRICAL CHARACTERISTICS – RE46C800 Unless otherwise indicated, all parameters apply at TA = -10°C to +60°C, VDD = 3V, VSS= 0V, CREG = 10 µF, CBST = 10 µF, 9VDET low, ACDET low. (Note 1) (Note 2) (Note 3) Parameter Supply Voltage Standby Supply Current Symbol Test Pin Min. Typ. Max. Units VDD 6 2 — 5 V Operating VBST 13 6 — 12 V Operating, 9V operation, 9VDET or ACDET high IDDSTBY1 — 13.6 — µA Inputs low; No loads, boost regulator running (Note 4) IDDSTBY2 — 5.8 9.3 µA Inputs low; No loads, boost regulator disabled, 9V operation, VBST = 9V, 9VDET high Conditions Quiescent Supply Current IDDQ 6 — 6.8 10.3 µA Inputs low; No loads; VBST = 5V; VLX = 0.5V Quiescent IVO IVOQ 13 — 3.6 5.2 µA Inputs low; No loads; VBST = 5V; VLX = 0.5V Note 1: 2: 3: 4: Wherever a specific VBST value is listed under test conditions, the VBST is forced externally with the inductor disconnected and the boost regulator is NOT running. Typical values are for design information only. The limits shown are 100% tested at 25°C only. Test limits are guard-banded based on temperature characterization to warrant compliance at temperature extremes. The Standby Supply Current IDDSTBY1 specified above can be approximated as follows: IDDSTBY1 = IDDQ + IIND Where IDDQ = average current into VDD supply IIND = average inductor current = VBST * IVOQ/(VIN * Efficiency) VIN = VDD = 3V 2013 Microchip Technology Inc. DS25172A-page 3 RE46C800 DC ELECTRICAL CHARACTERISTICS – RE46C800 (CONTINUED) Unless otherwise indicated, all parameters apply at TA = -10°C to +60°C, VDD = 3V, VSS= 0V, CREG = 10 µF, CBST = 10 µF, 9VDET low, ACDET low. (Note 1) (Note 2) (Note 3) Parameter Input Leakage Low Input Leakage High Symbol IIL Test Pin 1, 5, 7, 8, 10, 11, 20 Min. Typ. Max. Units Conditions — — -100 nA INP, 9VDET, ACDET, LEDEN, IO2, IODIR, HRNEN Inputs VIN = VSS IILOP 2 — — -200 pA INN input, VIN = VSS IILF 17 — -15 -50 µA FEED = -10V, VBST = 10V IIH1 1, 8, 10, 11, 20 — — 100 nA INP, LEDEN, IO2, IODIR, HRNEN Inputs VIN = VREG IIH2 5, 7 — — 100 nA 9VDET, ACDET Inputs, VIN = VBST, VBST = 10V. IIHOP 2 — — 200 pA INN input, VIN = VREG IIHF 17 — 20 50 µA FEED = +22V; VBST = 10V Output Off Leakage High IIHOZ 14, 15 — — 1 µA LEDEN = VSS, LEDPWR, LX = VBST = 10V Input Voltage Low VIL1 8, 10, 11, 20 — — 1 V LEDEN, IO2, IODIR, HRNEN Inputs VIL2 7 — — 7 V ACDET Input, VBST = 10V VIL3 5 — — 4 V 9VDET Input, VBST = 10V Input Voltage High Output Voltage Low Note 1: 2: 3: 4: VILF 17 — — 3 V FEED Input; VBST = 10V VILIO1 9 — — 0.8 V Falling edge of IO1 input, IODIR = VSS VIH1 8, 10, 11, 20 VREG -.7 — — V LEDEN, IO2, IODIR, HRNEN Inputs ACDET Input, VBST = 10V VIH2 7 8.2 — — V VIH3 5 6 — — V 9VDET Input, VBST = 10V VIHF 17 7 — — V FEED Input; VBST = 10V VIHIO1 9 2 — — V Rising edge of IO1 input, IODIR = VSS VOL1 18, 19 — — 0.5 V HS or HB; IOUT = 16 mA; VDD = 3V; VBST = 10V, HRNEN = VSS VOL2 14 — — 0.5 V LEDPWR; IOUT = 10 mA; VBST = 10V VOLIO2 10 — — 0.5 V IO2 output, IOUT = 100 µA, IODIR = VSS Wherever a specific VBST value is listed under test conditions, the VBST is forced externally with the inductor disconnected and the boost regulator is NOT running. Typical values are for design information only. The limits shown are 100% tested at 25°C only. Test limits are guard-banded based on temperature characterization to warrant compliance at temperature extremes. The Standby Supply Current IDDSTBY1 specified above can be approximated as follows: IDDSTBY1 = IDDQ + IIND Where IDDQ = average current into VDD supply IIND = average inductor current = VBST * IVOQ/(VIN * Efficiency) VIN = VDD = 3V DS25172A-page 4 2013 Microchip Technology Inc. RE46C800 DC ELECTRICAL CHARACTERISTICS – RE46C800 (CONTINUED) Unless otherwise indicated, all parameters apply at TA = -10°C to +60°C, VDD = 3V, VSS= 0V, CREG = 10 µF, CBST = 10 µF, 9VDET low, ACDET low. (Note 1) (Note 2) (Note 3) Parameter Output Voltage High Symbol Test Pin Min. Typ. Max. Units VOH1 18, 19 9.5 — — V HS or HB; IOUT = -16 mA; VBST = 10V; HRNEN = VREG VOHIO1 9 3 — — V IO1, IOUT = -4 mA, IODIR = VIH1, IO2 = VIH1 VOHIO2 10 VREG -.5 — — V IO2, IOUT = -100 µA, IODIR = VSS, IO1 = VIHIO1 Conditions Reference Voltage VREF 3 — 300 — mV VBST Output Voltage VVO1 13 9 9.8 10.6 V VDD = 3V; HRNEN = VREG; IOUT = 10 mA VVO2 13 3.6 4 4.4 V VDD = 3V; HRNEN = VSS; IOUT=10 mA VEFF1 — 85 — % ILOAD=10 mA; VDD =3V; HRNEN = VSS VEFF2 — 75 — % ILOAD = 100 µA; VDD = 3V; HRNEN = VSS VBST Efficiency VREG Voltage VREG Load Regulation Brown-out Threshold VBST-to-Brown-out Margin VREG 12 3.2 3.3 3.4 V VREGLD 12 — 30 50 mV IOUT < 20 mA IOUT = 0 to 20 mA; HRNEN = VREG VOBVT 13 3.2 3.6 4 V VOBVTM 13 100 400 — mV VVO2 - VOBVT Falling edge of VBST VBST = 3.0V; VREG = 2.0V Brown-out Pull Down IBT 12 20 40 — mA VREG Over Voltage Clamp VCL 12 3.75 4 4.25 V IO1 Output Current IO1IH1 9 25 — 60 µA IODIR = VSS, IO1 = 1V IO1IH2 9 — — 150 µA IODIR = VSS, IO1 = 15V IO1IOH1 9 -4 -5 — mA IODIR, IO2 = VIH1, IO1 = 3V IO1IOH2 9 — -5 -16 mA IODIR, IO2 = VIH1, IO1 = VSS IO1IOL1 9 — 10 — mA IO Dump Current, IODIR = VIH1, IO2 = VSS, IO1 = 1V VHYSTIO1 9 — 150 — mV IODIR = VSS Input Offset Voltage VOS 4 -1 — 1 mV VCM = 0.3V Common Mode Input Range VCMR 1, 2 VSS — VREG V IO1 Hysteresis Op Amp Note 1: 2: 3: 4: Wherever a specific VBST value is listed under test conditions, the VBST is forced externally with the inductor disconnected and the boost regulator is NOT running. Typical values are for design information only. The limits shown are 100% tested at 25°C only. Test limits are guard-banded based on temperature characterization to warrant compliance at temperature extremes. The Standby Supply Current IDDSTBY1 specified above can be approximated as follows: IDDSTBY1 = IDDQ + IIND Where IDDQ = average current into VDD supply IIND = average inductor current = VBST * IVOQ/(VIN * Efficiency) VIN = VDD = 3V 2013 Microchip Technology Inc. DS25172A-page 5 RE46C800 DC ELECTRICAL CHARACTERISTICS – RE46C800 (CONTINUED) Unless otherwise indicated, all parameters apply at TA = -10°C to +60°C, VDD = 3V, VSS= 0V, CREG = 10 µF, CBST = 10 µF, 9VDET low, ACDET low. (Note 1) (Note 2) (Note 3) Parameter Common Mode Rejection Ratio DC Open-Loop Gain (large signal) Maximum Output Voltage Swing Output Short Circuit Current Note 1: 2: 3: 4: Symbol Test Pin Min. Typ. Max. Units CMRR 1, 2, 4 — 80 — dB VREG = 3.3V, VCM = -0.3V to 3.3V AOL 4 — 115 — dB RL = 50 kΩ, VOUT = 0.3V to VREG - 0.3V VOL, VOH 4 VSS +10 — VREG -10 mV RL = 50 kΩ, 0.5V input overdrive ISC 4 — 20 — mA VREG = 3.3V Conditions Wherever a specific VBST value is listed under test conditions, the VBST is forced externally with the inductor disconnected and the boost regulator is NOT running. Typical values are for design information only. The limits shown are 100% tested at 25°C only. Test limits are guard-banded based on temperature characterization to warrant compliance at temperature extremes. The Standby Supply Current IDDSTBY1 specified above can be approximated as follows: IDDSTBY1 = IDDQ + IIND Where IDDQ = average current into VDD supply IIND = average inductor current = VBST * IVOQ/(VIN * Efficiency) VIN = VDD = 3V DS25172A-page 6 2013 Microchip Technology Inc. RE46C800 AC ELECTRICAL CHARACTERISTICS Unless otherwise indicated, all parameters apply at TA = -10°C to +60°C, VDD = 3V, VSS= 0V, CREG = 10 µF, CVBST = 10 µF. Parameter Symbol Test Pin Min. Typ. Max. Units 4 — 10 — kHz Conditions OP Amp AC Response Gain Bandwidth Product GBWP Slew Rate SR 4 — 3 — V/ms Phase margin PM 4 — 65 — ° Input Voltage Noise Eni 1, 2 — 5 — Input Voltage Noise Density eni 1, 2 — 170 — nV/ √Hz f = 1 kHz Input Current Noise Density ini 1, 2 — 0.6 — fA/ √Hz f = 1 kHz G = +1V/V Op Amp Noise Note 1: 2: 3: µVP-P f = 0.1 Hz to 10 kHz Wherever a specific VBST value is listed under test conditions, the VBST is forced externally with the inductor disconnected and the boost regulator is NOT running. Typical values are for design information only. The limits shown are 100% tested at 25°C only. Test limits are guard-banded based on temperature characterization to warrant compliance at temperature extremes. TEMPERATURE CHARACTERISTICS Electrical Characteristics: Unless otherwise indicated, VDD = 3V, VSS= 0V Parameter Sym. Min. Typ. Max. Units TA -10 — 60 °C TSTG -55 — 125 °C JA — 87.3 — °C/W Conditions Temperature Ranges Operating Temperature Range Storage Temperature Range Thermal Package Resistances Thermal Resistance, 20L-SSOP 2013 Microchip Technology Inc. DS25172A-page 7 RE46C800 2.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 2-1. TABLE 2-1: RE46C800 SSOP PIN FUNCTION TABLE Symbol Description 1 INP 2 INN Non-inverting input of the op amp. Inverting input of the op amp. 3 VREF Voltage reference for CO biasing and detection circuitry. 4 OPOUT 5 9VDET 6 VDD 7 ACDET AC power detect pin. 8 LEDEN Logic input used to enable the LED driver. Input is designed to interface with circuitry supplied by VREG, so input voltage levels will scale with the VREG voltage. 9 IO1 Logic bidirectional pin used for connection to remote units. This pin has an internal pull-down device. If used as an output, high level is VVO1. 10 IO2 Bidirectional pin used to send and receive IO1 interconnect signal status. Output of the op amp. Logic input used to disable the boost regulator. Low-voltage supply input. 11 IODIR Logic input used to select IO direction. 12 VREG Regulated output voltage. Nominal output is 3.3V. 13 VBST Boost regulator output, typically output voltage is 4V or 9.8V. Also used as the high-voltage supply input. 14 LEDPWR 15 LX Open drain NMOS output used to drive the boost regulator inductor. The inductor should be connected from this pin to the positive supply through a low resistance path. 16 VSS Connect to the negative supply voltage. 17 FEED Usually connected to the feedback electrode of the piezoelectric horn through a current limiting resistor. If not used, this pin must be connected to VSS. 18 HS HS is a complementary output to HB and connects to the ceramic electrode (S) of the piezoelectric transducer. 19 HB This pin is connected to the metal electrode (B) of a piezoelectric transducer. 20 HRNEN DS25172A-page 8 Open drain NMOS output used to drive a visible LED. Logic input for horn enable designed to interface with circuitry supplied by VREG. Input voltage levels will scale with the VREG voltage. 2013 Microchip Technology Inc. RE46C800 3.0 DEVICE DESCRIPTION Table 3-1 shows the truth table for the power management system. 3.1 Introduction TABLE 3-1: The RE46C800 provides the necessary analog functions to build a microcontroller-based CO or toxic gas detector. This includes an op amp and voltage reference for the electrochemical sensor, a voltage regulator for the microcontroller, an LED driver, a horn driver, a detector interconnect function, a boost regulator for 3V operation, a power management system that allows operation from 3V, 9V or AC derived power. The power management system provides the capability for AC power with battery backup. The RE46C800 provides a simple means for the microcontroller to control the operation of the CO detector and provide the necessary signaling functions during an alarm condition. 3.2 CO Sensor Circuit The RE46C800 provides a low offset op amp and reference voltage, VREF, for a two terminal electrochemical CO or toxic gas sensor. The unity gain stable op amp provides rail-to-rail inputs and output. The op amp output is monitored by the microcontroller to determine the CO concentration. This uncommitted op amp can be used for other purposes such as temperature sensing. 3.3 Power Management System The power management system allows the RE46C800 to be powered from a 3V or 9V battery or AC power. AC power is supplied as a DC voltage derived from an AC power supply. This DC voltage is diode connected to the VBST pin of the RE46C800. AC supplied power and a 9V battery can both be diode connected to the VBST pin. For low-voltage systems the battery is connected to the VDD pin. When only a low-voltage battery is available, the internal circuitry is powered from VDD. When a 9V battery or AC power is available, the internal circuitry is powered from VREG, which is a regulated 3.3V. The selection of the power source for the internal circuitry is controlled with the ACDET pin when the 9VDET pin is low. In low-voltage systems that are also AC powered, the boost regulator will turn on if voltage of the AC supplied power drops below the specified boost regulator voltage. This can cause the low-voltage battery to discharge more rapidly than expected. 9VDET ACDET POWER MANAGEMENT SYSTEM Internal Supply Boost Regulator 0 0 VDD Enabled 0 1 VREG Enabled 1 0 VREG Disabled 1 1 VREG Disabled 3.4 Boost Regulator The boost regulator only operates in low-voltage applications. The boost regulator is a fixed off time boost regulator with peak current limiting. In low-boost operation the peak current is nominally 0.6A. In highboost operation the peak current is nominally 1.2A. The boost regulator normally operates in Low-Boost mode, which provides a nominal 4V output voltage on the VBST pin. In High-Boost mode, the boost regulator provides a nominal 9.8V on the VBST pin. The boost regulator can be placed in High-Boost mode with HORNEN, LEDEN, or IODIR and IO2 both asserted high. The brown-out threshold voltage is the VBST voltage at which the voltage regulator and the horn will be disabled. When the VBST voltage falls below the brownout threshold voltage of 3.6V, VREG will be disabled and pulled to VSS with a nominal 40 mA current. When the boost voltage rises above the brown-out threshold voltage, VREG is enabled. 3.5 Voltage Regulator The voltage regulator provides a nominal 3.3V output at the VREG pin and is intended to power a microcontroller. In normal operation, the regulator will source current up to 20 mA, but the current sinking capability is typically under 1 µA. The voltage regulator is powered from the VBST pin. In low-voltage applications the regulator is powered by the boost regulator and the regulator load current is part of the boost regulator load current. An overvoltage clamp is intended to limit the voltage at VREG if it is pulled up by an external source to greater than 4V. When the boost regulator experiences a brown-out condition, the voltage regulator will be disabled and the VREG output will be pulled to VSS. The 9VDET pin will disable the boost regulator if 9VDET is high. For a low-voltage system, the 9VDET pin should be connected to VSS which will enable the boost regulator. 2013 Microchip Technology Inc. DS25172A-page 9 RE46C800 3.6 LED Driver The LED drive circuit provides power to an LED, which can be used as a visual indicator by the system. The LED drive circuit can also be used as part of a battery check function in battery-powered applications. When LEDEN is asserted high the LED will load the VBST output and the microcontroller can monitor the battery operation under load. In low-voltage systems the boost regulator will be placed into high-boost operation when LEDEN is asserted high. The load current is set by the resistor in series with the LED. 3.7 Interconnect Operation The IO circuitry provides the means for the CO detector to be connected to other CO detectors or smoke alarms. Table 3-2 below provides the truth table for the interconnect circuit operation. IO1 is a bidirectional pin that connects to other CO detectors or smoke alarms. IO2 is a bidirectional pin that connects to the microcontroller. IODIR connects to the microcontroller and determines when IO1 and IO2 act as an input or output. When IO1 is used as an output asserting a logic high, the IO1 output acts as current source that is biased from VBST. In low-voltage applications where the boost regulator is enabled, the boost regulator will operate in High-Boost mode. When IO1 is used as an output asserting a logic low, the IO1 output acts as current sink. IO2 logic levels are referenced to VREG. TABLE 3-2: IODIR IO2 IO1 Input Output Input Output 0 — — 0 1 1 — — 1 0 — 0 0 — 0 — 1 1 — 1 DS25172A-page 10 INTERCONNECT LOGIC TRUTH TABLE 2013 Microchip Technology Inc. RE46C800 4.0 APPLICATION NOTES 4.1 Boost Regulator The boost regulator in High-Boost mode (nominal VBST = 9.8V) can draw current pulses of greater than 1A and is, therefore, very sensitive to series resistance. Critical components of this resistance are: the inductor DC resistance, the internal resistance of the battery and the resistance in the connections from the inductor to the battery, from the inductor to the LX pin, from the inductor through the boost capacitor, and from the VSS pin to the battery. In order to function properly under full load at VDD = 2V, the total of the inductor and interconnect resistances should not exceed 0.3Ω. The internal battery resistance should be no more than 0.5Ω and a low ESR capacitor of 10 µF or more should be connected in parallel with the battery to average the current draw over the boost regulator switching cycle. The Schottky diode and inductor should be specified with a maximum operating current of 1.5A or higher. The boost capacitor should have a low ESR. 4.2 Typical Applications A few typical applications using the RE46C800 are listed below: AC POWER Line Line Neutral D1 10-12V DC Neutral ACDIS RE46C800 Working Microcontroller Interface CO Sensor 1.5 Mȍ 1Mȍ R1 22 μF C1 Counter VBAT 100 1 Mȍ R2 3V 10 μF C2 1 μF C3 100 Kȍ R8 R7 1 INP HRNEN 20 2 INN HB 19 3 HS 18 4 OPOUT FEED 17 5 9VDET VSS 16 6 LX 15 VDD 7 ACDET 8 9 Interface with Interconnected Units VREF 10 R5 R6 VBAT VBST IO1 VREG IO2 IODIR LED 10 μH D2 13 3.3V 12 11 470 L1 LEDPWR 14 LEDEN 220Kȍ R3 1 nF C4 IO1 IO2 IO2 10 μF C5 IO1 10 μF C6 If AC then VREG supplies chip VDD through an internal switch If no AC then VDD is supplied through the external VDD pin If IODIR is low, then IO1 is an input. If IODIR is high, then IO1 is a output. FIGURE 4-1: Typical Application: AC with 3V Battery Backup. 2013 Microchip Technology Inc. DS25172A-page 11 RE46C800 RE46C800 Working 1.5 Mȍ Microcontroller Interface CO Sensor 1 Mȍ R1 22 μF C1 Counter VBAT 100 Kȍ R2 10 μF C2 3V 1 INP HRNEN 20 2 INN HB 19 3 HS 18 VREF 4 OPOUT FEED 17 5 9VDET VSS 16 6 LX 15 VDD 7 ACDET 1 μF C3 8 9 10 Interface with Interconnected Units R5 R6 VBST IO1 VREG IO2 IODIR 470 VBAT L1 LEDPWR 14 LEDEN 220Kȍ R3 1 nF C4 13 3.3V 12 11 LED 10 μH D2 IO1 IO2 IO2 10 μF C5 IO1 10 μF C6 If IODIR is low, then IO1 is an input. If IODIR is high, then IO1 is a output. FIGURE 4-2: Typical Application: 3V Battery Operation. AC POWER Line Line Neutral D1 10-12V Neutral DC ACDIS RE46C800 Working Microcontroller Interface CO Sensor 1.5 Mȍ 22 μF C1 1 Mȍ R1 Counter VBAT D3 1 Mȍ 9V 10 μF C2 100 Kȍ R8 R7 1 INP HRNEN 20 2 INN HB 19 3 HS 18 4 OPOUT FEED 17 5 9VDET VSS 16 6 LX 15 VDD 7 ACDET 8 9 Interface with Interconnected Units VREF 10 R5 220Kȍ R3 1 nF C4 R6 470 Kȍ LED LEDPWR 14 LEDEN VBST IO1 VREG IO2 IODIR 13 3.3V 12 11 IO1 IO2 IO2 10 μF C5 IO1 10 μF C6 If IODIR is low, then IO1 is an input. If IODIR is high, then IO1 is a output. FIGURE 4-3: DS25172A-page 12 Typical Application: AC with 9V Battery Backup. 2013 Microchip Technology Inc. RE46C800 RE46C800 Working 1.5 Mȍ Microcontroller Interface CO Sensor 1 Mȍ R1 22 μF C1 Counter VBAT HRNEN 20 2 INN HB 19 3 HS 18 VREF 1 nF C4 FEED 17 R6 5 9VDET VSS 16 470 6 LX 15 8 9 10 Interface with Interconnected Units R5 220Kȍ R3 4 OPOUT VDD 7 ACDET 10 μF C2 9V 1 INP LEDPWR 14 LEDEN VBST IO1 VREG IO2 IODIR LED 13 3.3V 12 11 IO1 IO2 IO2 10 μF C6 10 μF C5 IO1 If IODIR is low, then IO1 is an input. If IODIR is high, then IO1 is a output. FIGURE 4-4: Typical Application: 9V Battery Operation. AC POWER Line Line Neutral D1 10-12V Neutral DC ACDIS RE46C800 Working Microcontroller Interface CO Sensor 1.5 Mȍ 22 μF C1 1 Mȍ R1 Counter 1 Mȍ 100 Kȍ R8 R7 1 INP HRNEN 20 2 INN HB 19 3 VREF HS 18 4 OPOUT FEED 17 5 9VDET VSS 16 6 VDD LX 15 7 ACDET 8 9 10 Interface with Interconnected Units R5 220Kȍ 1 nF C4 R3 R6 470 Kȍ LED LEDPWR 14 LEDEN VBST IO1 VREG IO2 IODIR 13 3.3V 12 11 IO1 IO2 IO2 10 μF C5 IO1 10 μF C6 If IODIR is low, then IO1 is an input. If IODIR is high, then IO1 is a output. FIGURE 4-5: Typical Application: AC only. 2013 Microchip Technology Inc. DS25172A-page 13 RE46C800 NOTES: DS25172A-page 14 2013 Microchip Technology Inc. RE46C800 5.0 PACKAGING INFORMATION 5.1 Package Marking Information 20-Lead SSOP (5.30 mm) Example RE46C800 V/SS e^^3 1308256 Legend: XX...X Y YY WW NNN e3 * Note: Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 2013 Microchip Technology Inc. DS25172A-page 15 RE46C800 /HDG3ODVWLF6KULQN6PDOO2XWOLQH66±PP%RG\>6623@ 1RWH )RUWKHPRVWFXUUHQWSDFNDJHGUDZLQJVSOHDVHVHHWKH0LFURFKLS3DFNDJLQJ6SHFLILFDWLRQORFDWHGDW KWWSZZZPLFURFKLSFRPSDFNDJLQJ D N E E1 NOTE 1 1 2 e b c A2 A φ A1 L1 8QLWV 'LPHQVLRQ/LPLWV 1XPEHURI3LQV L 0,//,0(7(56 0,1 1 120 0$; 3LWFK H 2YHUDOO+HLJKW $ ± %6& ± 0ROGHG3DFNDJH7KLFNQHVV $ 6WDQGRII $ ± ± 2YHUDOO:LGWK ( 0ROGHG3DFNDJH:LGWK ( 2YHUDOO/HQJWK ' )RRW/HQJWK / )RRWSULQW / 5() /HDG7KLFNQHVV F ± )RRW$QJOH /HDG:LGWK E ± 1RWHV 3LQYLVXDOLQGH[IHDWXUHPD\YDU\EXWPXVWEHORFDWHGZLWKLQWKHKDWFKHGDUHD 'LPHQVLRQV'DQG(GRQRWLQFOXGHPROGIODVKRUSURWUXVLRQV0ROGIODVKRUSURWUXVLRQVVKDOOQRWH[FHHGPPSHUVLGH 'LPHQVLRQLQJDQGWROHUDQFLQJSHU$60(<0 %6& %DVLF'LPHQVLRQ7KHRUHWLFDOO\H[DFWYDOXHVKRZQZLWKRXWWROHUDQFHV 5() 5HIHUHQFH'LPHQVLRQXVXDOO\ZLWKRXWWROHUDQFHIRULQIRUPDWLRQSXUSRVHVRQO\ 0LFURFKLS 7HFKQRORJ\ 'UDZLQJ &% DS25172A-page 16 2013 Microchip Technology Inc. RE46C800 Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging 2013 Microchip Technology Inc. DS25172A-page 17 RE46C800 NOTES: DS25172A-page 18 2013 Microchip Technology Inc. RE46C800 APPENDIX A: REVISION HISTORY Revision A (March 2013) • Initial Release of this Document. 2013 Microchip Technology Inc. DS25172A-page 19 RE46C800 NOTES: DS25172A-page 20 2013 Microchip Technology Inc. RE46C800 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. Device X X X Package Number Lead Free/ of Pins Tape and Reel Device: RE46C800 RE46C800T Package: SS20 = Plastic Shrink Small Outline - Narrow, 5.33 mm Body, 20-Lead (SSOP) Examples: a) b) RE46C800SS20F: 20LD SSOP package RE46C800SS20TF: 20LD SSOP package Tape and Reel CMOS Carbon Monoxide Detector IC CMOS Carbon Monoxide Detector IC (Tape and Reel) 2013 Microchip Technology Inc. DS25172A-page 21 RE46C800 NOTES: DS25172A-page 22 2013 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, dsPIC, FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlash and UNI/O are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor, MTP, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. Analog-for-the-Digital Age, Application Maestro, BodyCom, chipKIT, chipKIT logo, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit, PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O, Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA and Z-Scale are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. GestIC and ULPP are registered trademarks of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. © 2013, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. ISBN: 9781620771143 QUALITY MANAGEMENT SYSTEM CERTIFIED BY DNV == ISO/TS 16949 == 2013 Microchip Technology Inc. Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. 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