MICROCHIP RE46C800

RE46C800
Carbon Monoxide Detector Companion IC
Features:
Description:
•
•
•
•
•
•
The RE46C800 is a low-power CMOS carbon monoxide
detector companion IC. The RE46C800 provides all of
the analog, interface, and power management functions
for a microcontroller-based CO or toxic gas detector. It
is intended for use in both 3V and 9V battery or batterybacked applications. It features a boost regulator and
horn driver circuit suitable for driving a piezoelectric
horn, a 3.3V regulator for microcontroller voltage
regulation, an LED driver, an operational amplifier and
an IO for communication with interconnected units.
Low Quiescent Current
Operation from 2V or 12V
9.8V Boost Regulator
Horn Driver
LED Driver
3.3V Regulated Voltage for Microcontroller
Operation
• Internal Operational Amplifiers:
- ±1 mV Input Offset Voltage
- Rail-to-rail Input and Output
- 10 kHz Gain Bandwidth Product
- Unity Gain Stable
• Bidirectional Alarm Interconnect
Applications:
• CO Detector
• Toxic Gas Detector
• Heat Detector
Package Types
RE46C800
SSOP
INP
1
20
HRNEN
INN
VREF
2
19
HB
3
18
HS
OPOUT
9VDET
VDD
ACDET
4
5
17
16
FEED
VSS
6
7
15
LEDEN
8
13
12
LX
LEDPWR
VBST
IO1
IO2
 2013 Microchip Technology Inc.
9
10
14
11
VREG
IODIR
DS25172A-page 1
RE46C800
Functional Block Diagram
VDDS
9VDET (5)
LX (15)
HRNEN (20)
BOOST
DISABLE
PWM
CONTROL
VBST
HB (19)
LEVEL
SHIFTER
I_LIMIT
ACDET (7)
HS (18)
VREG
VDD (6)
SUPPLY
SELECT
FEED (17)
VDDS
ERROR
AMPLIFIER
VBST (13)
VDDS
REFERENCE
VOLTAGE
VREG (12)
VREG
OV
Protection
INP (1)
VREF
GENERATOR
VREF (3)
INN (2)
OPOUT (4)
LEDEN (8)
VBST
LEDPWR (14)
IO1 (9)
IODIR (11)
IO2 (10)
DS25172A-page 2
INTERCONNECT
VSS (16)
 2013 Microchip Technology Inc.
RE46C800
1.0
ELECTRICAL
CHARACTERISTICS
1.1
Absolute Maximum Ratings†
VDD............................................................................................................................................................... -0.3V to 5.5V
ESD HBM................................................................................................................................................................1500V
ESD MM....................................................................................................................................................................150V
VBST, LX ........................................................................................................................................................ -0.3V to 13V
Input Voltage Range Except ACDET, 9VDET, FEED, IO1 ..................................................... VIN1 = – .3V to VREG + .3V
ACDET, 9VDET Input Voltage Range .....................................................................................VIN2 = – .3V to VBST + .3V
FEED Input Voltage Range ........................................................................................................... VINFD = -10V to + 22V
IO1 Input Voltage Range....................................................................................................................VINIO1 = -.3 to +15V
Input Current except FEED ............................................................................................................................. IIN = 10 mA
Operating Temperature .....................................................................................................................TA = -10C to +60C
Storage Temperature ..................................................................................................................TSTG = -55C to +125C
Maximum Junction Temperature ....................................................................................................................TJ = +15C
† Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only and functional operation of the device at these or any other conditions above those indicated in
the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods
may affect device reliability.
DC ELECTRICAL CHARACTERISTICS – RE46C800
Unless otherwise indicated, all parameters apply at TA = -10°C to +60°C, VDD = 3V, VSS= 0V, CREG = 10 µF,
CBST = 10 µF, 9VDET low, ACDET low. (Note 1) (Note 2) (Note 3)
Parameter
Supply Voltage
Standby Supply Current
Symbol
Test
Pin
Min.
Typ.
Max.
Units
VDD
6
2
—
5
V
Operating
VBST
13
6
—
12
V
Operating, 9V operation,
9VDET or ACDET high
IDDSTBY1
—
13.6
—
µA
Inputs low; No loads, boost
regulator running (Note 4)
IDDSTBY2
—
5.8
9.3
µA
Inputs low; No loads, boost
regulator disabled, 9V operation, VBST = 9V, 9VDET high
Conditions
Quiescent Supply
Current
IDDQ
6
—
6.8
10.3
µA
Inputs low; No loads;
VBST = 5V; VLX = 0.5V
Quiescent IVO
IVOQ
13
—
3.6
5.2
µA
Inputs low; No loads;
VBST = 5V; VLX = 0.5V
Note 1:
2:
3:
4:
Wherever a specific VBST value is listed under test conditions, the VBST is forced externally with the inductor
disconnected and the boost regulator is NOT running.
Typical values are for design information only.
The limits shown are 100% tested at 25°C only. Test limits are guard-banded based on temperature characterization to
warrant compliance at temperature extremes.
The Standby Supply Current IDDSTBY1 specified above can be approximated as follows:
IDDSTBY1 = IDDQ + IIND
Where
IDDQ = average current into VDD supply
IIND = average inductor current = VBST * IVOQ/(VIN * Efficiency)
VIN = VDD = 3V
 2013 Microchip Technology Inc.
DS25172A-page 3
RE46C800
DC ELECTRICAL CHARACTERISTICS – RE46C800 (CONTINUED)
Unless otherwise indicated, all parameters apply at TA = -10°C to +60°C, VDD = 3V, VSS= 0V, CREG = 10 µF,
CBST = 10 µF, 9VDET low, ACDET low. (Note 1) (Note 2) (Note 3)
Parameter
Input Leakage Low
Input Leakage High
Symbol
IIL
Test
Pin
1, 5, 7,
8, 10,
11, 20
Min.
Typ.
Max.
Units
Conditions
—
—
-100
nA
INP, 9VDET, ACDET, LEDEN,
IO2, IODIR, HRNEN Inputs
VIN = VSS
IILOP
2
—
—
-200
pA
INN input, VIN = VSS
IILF
17
—
-15
-50
µA
FEED = -10V, VBST = 10V
IIH1
1, 8,
10, 11,
20
—
—
100
nA
INP, LEDEN, IO2, IODIR,
HRNEN Inputs VIN = VREG
IIH2
5, 7
—
—
100
nA
9VDET, ACDET Inputs,
VIN = VBST, VBST = 10V.
IIHOP
2
—
—
200
pA
INN input, VIN = VREG
IIHF
17
—
20
50
µA
FEED = +22V; VBST = 10V
Output Off Leakage
High
IIHOZ
14, 15
—
—
1
µA
LEDEN = VSS, LEDPWR,
LX = VBST = 10V
Input Voltage Low
VIL1
8, 10,
11, 20
—
—
1
V
LEDEN, IO2, IODIR, HRNEN
Inputs
VIL2
7
—
—
7
V
ACDET Input, VBST = 10V
VIL3
5
—
—
4
V
9VDET Input, VBST = 10V
Input Voltage High
Output Voltage Low
Note 1:
2:
3:
4:
VILF
17
—
—
3
V
FEED Input; VBST = 10V
VILIO1
9
—
—
0.8
V
Falling edge of IO1 input,
IODIR = VSS
VIH1
8, 10,
11, 20
VREG -.7
—
—
V
LEDEN, IO2, IODIR, HRNEN
Inputs
ACDET Input, VBST = 10V
VIH2
7
8.2
—
—
V
VIH3
5
6
—
—
V
9VDET Input, VBST = 10V
VIHF
17
7
—
—
V
FEED Input; VBST = 10V
VIHIO1
9
2
—
—
V
Rising edge of IO1 input,
IODIR = VSS
VOL1
18, 19
—
—
0.5
V
HS or HB; IOUT = 16 mA;
VDD = 3V; VBST = 10V,
HRNEN = VSS
VOL2
14
—
—
0.5
V
LEDPWR; IOUT = 10 mA;
VBST = 10V
VOLIO2
10
—
—
0.5
V
IO2 output, IOUT = 100 µA,
IODIR = VSS
Wherever a specific VBST value is listed under test conditions, the VBST is forced externally with the inductor
disconnected and the boost regulator is NOT running.
Typical values are for design information only.
The limits shown are 100% tested at 25°C only. Test limits are guard-banded based on temperature characterization to
warrant compliance at temperature extremes.
The Standby Supply Current IDDSTBY1 specified above can be approximated as follows:
IDDSTBY1 = IDDQ + IIND
Where
IDDQ = average current into VDD supply
IIND = average inductor current = VBST * IVOQ/(VIN * Efficiency)
VIN = VDD = 3V
DS25172A-page 4
 2013 Microchip Technology Inc.
RE46C800
DC ELECTRICAL CHARACTERISTICS – RE46C800 (CONTINUED)
Unless otherwise indicated, all parameters apply at TA = -10°C to +60°C, VDD = 3V, VSS= 0V, CREG = 10 µF,
CBST = 10 µF, 9VDET low, ACDET low. (Note 1) (Note 2) (Note 3)
Parameter
Output Voltage High
Symbol
Test
Pin
Min.
Typ.
Max.
Units
VOH1
18, 19
9.5
—
—
V
HS or HB; IOUT = -16 mA;
VBST = 10V; HRNEN = VREG
VOHIO1
9
3
—
—
V
IO1, IOUT = -4 mA,
IODIR = VIH1, IO2 = VIH1
VOHIO2
10
VREG -.5
—
—
V
IO2, IOUT = -100 µA,
IODIR = VSS, IO1 = VIHIO1
Conditions
Reference Voltage
VREF
3
—
300
—
mV
VBST Output Voltage
VVO1
13
9
9.8
10.6
V
VDD = 3V; HRNEN = VREG;
IOUT = 10 mA
VVO2
13
3.6
4
4.4
V
VDD = 3V; HRNEN = VSS;
IOUT=10 mA
VEFF1
—
85
—
%
ILOAD=10 mA; VDD =3V;
HRNEN = VSS
VEFF2
—
75
—
%
ILOAD = 100 µA; VDD = 3V;
HRNEN = VSS
VBST Efficiency
VREG Voltage
VREG Load Regulation
Brown-out Threshold
VBST-to-Brown-out
Margin
VREG
12
3.2
3.3
3.4
V
VREGLD
12
—
30
50
mV
IOUT < 20 mA
IOUT = 0 to 20 mA;
HRNEN = VREG
VOBVT
13
3.2
3.6
4
V
VOBVTM
13
100
400
—
mV
VVO2 - VOBVT
Falling edge of VBST
VBST = 3.0V; VREG = 2.0V
Brown-out Pull Down
IBT
12
20
40
—
mA
VREG Over Voltage
Clamp
VCL
12
3.75
4
4.25
V
IO1 Output Current
IO1IH1
9
25
—
60
µA
IODIR = VSS, IO1 = 1V
IO1IH2
9
—
—
150
µA
IODIR = VSS, IO1 = 15V
IO1IOH1
9
-4
-5
—
mA
IODIR, IO2 = VIH1, IO1 = 3V
IO1IOH2
9
—
-5
-16
mA
IODIR, IO2 = VIH1, IO1 = VSS
IO1IOL1
9
—
10
—
mA
IO Dump Current,
IODIR = VIH1, IO2 = VSS,
IO1 = 1V
VHYSTIO1
9
—
150
—
mV
IODIR = VSS
Input Offset Voltage
VOS
4
-1
—
1
mV
VCM = 0.3V
Common Mode Input
Range
VCMR
1, 2
VSS
—
VREG
V
IO1 Hysteresis
Op Amp
Note 1:
2:
3:
4:
Wherever a specific VBST value is listed under test conditions, the VBST is forced externally with the inductor
disconnected and the boost regulator is NOT running.
Typical values are for design information only.
The limits shown are 100% tested at 25°C only. Test limits are guard-banded based on temperature characterization to
warrant compliance at temperature extremes.
The Standby Supply Current IDDSTBY1 specified above can be approximated as follows:
IDDSTBY1 = IDDQ + IIND
Where
IDDQ = average current into VDD supply
IIND = average inductor current = VBST * IVOQ/(VIN * Efficiency)
VIN = VDD = 3V
 2013 Microchip Technology Inc.
DS25172A-page 5
RE46C800
DC ELECTRICAL CHARACTERISTICS – RE46C800 (CONTINUED)
Unless otherwise indicated, all parameters apply at TA = -10°C to +60°C, VDD = 3V, VSS= 0V, CREG = 10 µF,
CBST = 10 µF, 9VDET low, ACDET low. (Note 1) (Note 2) (Note 3)
Parameter
Common Mode
Rejection Ratio
DC Open-Loop Gain
(large signal)
Maximum Output
Voltage Swing
Output Short Circuit
Current
Note 1:
2:
3:
4:
Symbol
Test
Pin
Min.
Typ.
Max.
Units
CMRR
1, 2, 4
—
80
—
dB
VREG = 3.3V, VCM = -0.3V to
3.3V
AOL
4
—
115
—
dB
RL = 50 kΩ, VOUT = 0.3V to
VREG - 0.3V
VOL, VOH
4
VSS +10
—
VREG -10
mV
RL = 50 kΩ, 0.5V input
overdrive
ISC
4
—
20
—
mA
VREG = 3.3V
Conditions
Wherever a specific VBST value is listed under test conditions, the VBST is forced externally with the inductor
disconnected and the boost regulator is NOT running.
Typical values are for design information only.
The limits shown are 100% tested at 25°C only. Test limits are guard-banded based on temperature characterization to
warrant compliance at temperature extremes.
The Standby Supply Current IDDSTBY1 specified above can be approximated as follows:
IDDSTBY1 = IDDQ + IIND
Where
IDDQ = average current into VDD supply
IIND = average inductor current = VBST * IVOQ/(VIN * Efficiency)
VIN = VDD = 3V
DS25172A-page 6
 2013 Microchip Technology Inc.
RE46C800
AC ELECTRICAL CHARACTERISTICS
Unless otherwise indicated, all parameters apply at TA = -10°C to +60°C, VDD = 3V, VSS= 0V, CREG = 10 µF,
CVBST = 10 µF.
Parameter
Symbol
Test Pin
Min.
Typ.
Max.
Units
4
—
10
—
kHz
Conditions
OP Amp AC Response
Gain Bandwidth
Product
GBWP
Slew Rate
SR
4
—
3
—
V/ms
Phase margin
PM
4
—
65
—
°
Input Voltage
Noise
Eni
1, 2
—
5
—
Input Voltage
Noise Density
eni
1, 2
—
170
—
nV/
√Hz
f = 1 kHz
Input Current
Noise Density
ini
1, 2
—
0.6
—
fA/
√Hz
f = 1 kHz
G = +1V/V
Op Amp Noise
Note 1:
2:
3:
µVP-P f = 0.1 Hz to 10 kHz
Wherever a specific VBST value is listed under test conditions, the VBST is forced externally with the inductor
disconnected and the boost regulator is NOT running.
Typical values are for design information only.
The limits shown are 100% tested at 25°C only. Test limits are guard-banded based on temperature characterization to
warrant compliance at temperature extremes.
TEMPERATURE CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, VDD = 3V, VSS= 0V
Parameter
Sym.
Min.
Typ.
Max.
Units
TA
-10
—
60
°C
TSTG
-55
—
125
°C
JA
—
87.3
—
°C/W
Conditions
Temperature Ranges
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance, 20L-SSOP
 2013 Microchip Technology Inc.
DS25172A-page 7
RE46C800
2.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 2-1.
TABLE 2-1:
RE46C800
SSOP
PIN FUNCTION TABLE
Symbol
Description
1
INP
2
INN
Non-inverting input of the op amp.
Inverting input of the op amp.
3
VREF
Voltage reference for CO biasing and detection circuitry.
4
OPOUT
5
9VDET
6
VDD
7
ACDET
AC power detect pin.
8
LEDEN
Logic input used to enable the LED driver. Input is designed to interface with
circuitry supplied by VREG, so input voltage levels will scale with the VREG
voltage.
9
IO1
Logic bidirectional pin used for connection to remote units. This pin has an
internal pull-down device. If used as an output, high level is VVO1.
10
IO2
Bidirectional pin used to send and receive IO1 interconnect signal status.
Output of the op amp.
Logic input used to disable the boost regulator.
Low-voltage supply input.
11
IODIR
Logic input used to select IO direction.
12
VREG
Regulated output voltage. Nominal output is 3.3V.
13
VBST
Boost regulator output, typically output voltage is 4V or 9.8V. Also used as
the high-voltage supply input.
14
LEDPWR
15
LX
Open drain NMOS output used to drive the boost regulator inductor. The
inductor should be connected from this pin to the positive supply through a
low resistance path.
16
VSS
Connect to the negative supply voltage.
17
FEED
Usually connected to the feedback electrode of the piezoelectric horn
through a current limiting resistor. If not used, this pin must be connected to
VSS.
18
HS
HS is a complementary output to HB and connects to the ceramic electrode
(S) of the piezoelectric transducer.
19
HB
This pin is connected to the metal electrode (B) of a piezoelectric transducer.
20
HRNEN
DS25172A-page 8
Open drain NMOS output used to drive a visible LED.
Logic input for horn enable designed to interface with circuitry supplied by
VREG. Input voltage levels will scale with the VREG voltage.
 2013 Microchip Technology Inc.
RE46C800
3.0
DEVICE DESCRIPTION
Table 3-1 shows the truth table for the power
management system.
3.1
Introduction
TABLE 3-1:
The RE46C800 provides the necessary analog
functions to build a microcontroller-based CO or toxic
gas detector. This includes an op amp and voltage
reference for the electrochemical sensor, a voltage
regulator for the microcontroller, an LED driver, a horn
driver, a detector interconnect function, a boost regulator for 3V operation, a power management system that
allows operation from 3V, 9V or AC derived power. The
power management system provides the capability for
AC power with battery backup. The RE46C800
provides a simple means for the microcontroller to
control the operation of the CO detector and provide
the necessary signaling functions during an alarm
condition.
3.2
CO Sensor Circuit
The RE46C800 provides a low offset op amp and
reference voltage, VREF, for a two terminal
electrochemical CO or toxic gas sensor. The unity gain
stable op amp provides rail-to-rail inputs and output.
The op amp output is monitored by the microcontroller
to determine the CO concentration. This uncommitted
op amp can be used for other purposes such as
temperature sensing.
3.3
Power Management System
The power management system allows the RE46C800
to be powered from a 3V or 9V battery or AC power. AC
power is supplied as a DC voltage derived from an AC
power supply. This DC voltage is diode connected to
the VBST pin of the RE46C800. AC supplied power and
a 9V battery can both be diode connected to the VBST
pin.
For low-voltage systems the battery is connected to the
VDD pin. When only a low-voltage battery is available,
the internal circuitry is powered from VDD. When a 9V
battery or AC power is available, the internal circuitry is
powered from VREG, which is a regulated 3.3V. The
selection of the power source for the internal circuitry is
controlled with the ACDET pin when the 9VDET pin is
low.
In low-voltage systems that are also AC powered, the
boost regulator will turn on if voltage of the AC supplied
power drops below the specified boost regulator
voltage. This can cause the low-voltage battery to
discharge more rapidly than expected.
9VDET ACDET
POWER MANAGEMENT
SYSTEM
Internal
Supply
Boost Regulator
0
0
VDD
Enabled
0
1
VREG
Enabled
1
0
VREG
Disabled
1
1
VREG
Disabled
3.4
Boost Regulator
The boost regulator only operates in low-voltage
applications. The boost regulator is a fixed off time
boost regulator with peak current limiting. In low-boost
operation the peak current is nominally 0.6A. In highboost operation the peak current is nominally 1.2A. The
boost regulator normally operates in Low-Boost mode,
which provides a nominal 4V output voltage on the
VBST pin. In High-Boost mode, the boost regulator
provides a nominal 9.8V on the VBST pin. The boost
regulator can be placed in High-Boost mode with
HORNEN, LEDEN, or IODIR and IO2 both asserted
high.
The brown-out threshold voltage is the VBST voltage at
which the voltage regulator and the horn will be
disabled. When the VBST voltage falls below the brownout threshold voltage of 3.6V, VREG will be disabled and
pulled to VSS with a nominal 40 mA current. When the
boost voltage rises above the brown-out threshold
voltage, VREG is enabled.
3.5
Voltage Regulator
The voltage regulator provides a nominal 3.3V output
at the VREG pin and is intended to power a microcontroller. In normal operation, the regulator will source
current up to 20 mA, but the current sinking capability
is typically under 1 µA. The voltage regulator is powered from the VBST pin. In low-voltage applications the
regulator is powered by the boost regulator and the
regulator load current is part of the boost regulator load
current. An overvoltage clamp is intended to limit the
voltage at VREG if it is pulled up by an external source
to greater than 4V. When the boost regulator experiences a brown-out condition, the voltage regulator will
be disabled and the VREG output will be pulled to VSS.
The 9VDET pin will disable the boost regulator if
9VDET is high. For a low-voltage system, the 9VDET
pin should be connected to VSS which will enable the
boost regulator.
 2013 Microchip Technology Inc.
DS25172A-page 9
RE46C800
3.6
LED Driver
The LED drive circuit provides power to an LED, which
can be used as a visual indicator by the system. The
LED drive circuit can also be used as part of a battery
check function in battery-powered applications. When
LEDEN is asserted high the LED will load the VBST
output and the microcontroller can monitor the battery
operation under load. In low-voltage systems the boost
regulator will be placed into high-boost operation when
LEDEN is asserted high. The load current is set by the
resistor in series with the LED.
3.7
Interconnect Operation
The IO circuitry provides the means for the CO detector
to be connected to other CO detectors or smoke
alarms. Table 3-2 below provides the truth table for the
interconnect circuit operation. IO1 is a bidirectional pin
that connects to other CO detectors or smoke alarms.
IO2 is a bidirectional pin that connects to the
microcontroller. IODIR connects to the microcontroller
and determines when IO1 and IO2 act as an input or
output. When IO1 is used as an output asserting a logic
high, the IO1 output acts as current source that is
biased from VBST. In low-voltage applications where
the boost regulator is enabled, the boost regulator will
operate in High-Boost mode. When IO1 is used as an
output asserting a logic low, the IO1 output acts as
current sink. IO2 logic levels are referenced to VREG.
TABLE 3-2:
IODIR
IO2
IO1
Input
Output
Input
Output
0
—
—
0
1
1
—
—
1
0
—
0
0
—
0
—
1
1
—
1
DS25172A-page 10
INTERCONNECT LOGIC
TRUTH TABLE
 2013 Microchip Technology Inc.
RE46C800
4.0
APPLICATION NOTES
4.1
Boost Regulator
The boost regulator in High-Boost mode (nominal
VBST = 9.8V) can draw current pulses of greater than
1A and is, therefore, very sensitive to series resistance.
Critical components of this resistance are: the inductor
DC resistance, the internal resistance of the battery
and the resistance in the connections from the inductor
to the battery, from the inductor to the LX pin, from the
inductor through the boost capacitor, and from the VSS
pin to the battery. In order to function properly under full
load at VDD = 2V, the total of the inductor and interconnect resistances should not exceed 0.3Ω. The internal
battery resistance should be no more than 0.5Ω and a
low ESR capacitor of 10 µF or more should be
connected in parallel with the battery to average the
current draw over the boost regulator switching cycle.
The Schottky diode and inductor should be specified
with a maximum operating current of 1.5A or higher.
The boost capacitor should have a low ESR.
4.2
Typical Applications
A few typical applications using the RE46C800 are
listed below:
AC POWER
Line
Line
Neutral
D1
10-12V
DC
Neutral
ACDIS
RE46C800
Working
Microcontroller Interface
CO
Sensor
1.5 Mȍ
1Mȍ
R1
22 μF
C1
Counter
VBAT
100
1 Mȍ
R2
3V
10 μF
C2
1 μF
C3
100 Kȍ
R8
R7
1 INP
HRNEN 20
2 INN
HB 19
3
HS 18
4 OPOUT
FEED 17
5 9VDET
VSS
16
6
LX 15
VDD
7 ACDET
8
9
Interface with
Interconnected Units
VREF
10
R5
R6
VBAT
VBST
IO1
VREG
IO2
IODIR
LED
10 μH
D2
13
3.3V
12
11
470
L1
LEDPWR 14
LEDEN
220Kȍ
R3
1 nF
C4
IO1
IO2
IO2
10 μF
C5
IO1
10 μF
C6
If AC then VREG supplies chip VDD through an internal switch
If no AC then VDD is supplied through the external VDD pin
If IODIR is low, then IO1 is an input.
If IODIR is high, then IO1 is a output.
FIGURE 4-1:
Typical Application: AC with 3V Battery Backup.
 2013 Microchip Technology Inc.
DS25172A-page 11
RE46C800
RE46C800
Working
1.5 Mȍ
Microcontroller Interface
CO
Sensor
1 Mȍ
R1
22 μF
C1
Counter
VBAT
100 Kȍ
R2
10 μF
C2
3V
1 INP
HRNEN 20
2 INN
HB 19
3
HS 18
VREF
4 OPOUT
FEED 17
5 9VDET
VSS
16
6
LX 15
VDD
7 ACDET
1 μF
C3
8
9
10
Interface with
Interconnected Units
R5
R6
VBST
IO1
VREG
IO2
IODIR
470
VBAT
L1
LEDPWR 14
LEDEN
220Kȍ
R3
1 nF
C4
13
3.3V
12
11
LED
10 μH
D2
IO1
IO2
IO2
10 μF
C5
IO1
10 μF
C6
If IODIR is low, then IO1 is an input.
If IODIR is high, then IO1 is a output.
FIGURE 4-2:
Typical Application: 3V Battery Operation.
AC POWER
Line
Line
Neutral
D1
10-12V
Neutral
DC
ACDIS
RE46C800
Working
Microcontroller Interface
CO
Sensor
1.5 Mȍ
22 μF
C1
1 Mȍ
R1
Counter
VBAT
D3
1 Mȍ
9V
10 μF
C2
100 Kȍ
R8
R7
1 INP
HRNEN 20
2 INN
HB 19
3
HS 18
4 OPOUT
FEED 17
5 9VDET
VSS 16
6
LX 15
VDD
7 ACDET
8
9
Interface with
Interconnected Units
VREF
10
R5
220Kȍ
R3
1 nF
C4
R6
470 Kȍ
LED
LEDPWR 14
LEDEN
VBST
IO1
VREG
IO2
IODIR
13
3.3V
12
11
IO1
IO2
IO2
10 μF
C5
IO1
10 μF
C6
If IODIR is low, then IO1 is an input.
If IODIR is high, then IO1 is a output.
FIGURE 4-3:
DS25172A-page 12
Typical Application: AC with 9V Battery Backup.
 2013 Microchip Technology Inc.
RE46C800
RE46C800
Working
1.5 Mȍ
Microcontroller Interface
CO
Sensor
1 Mȍ
R1
22 μF
C1
Counter
VBAT
HRNEN 20
2 INN
HB 19
3
HS 18
VREF
1 nF
C4
FEED 17
R6
5 9VDET
VSS 16
470
6
LX 15
8
9
10
Interface with
Interconnected Units
R5
220Kȍ
R3
4 OPOUT
VDD
7 ACDET
10 μF
C2
9V
1 INP
LEDPWR 14
LEDEN
VBST
IO1
VREG
IO2
IODIR
LED
13
3.3V
12
11
IO1
IO2
IO2
10 μF
C6
10 μF
C5
IO1
If IODIR is low, then IO1 is an input.
If IODIR is high, then IO1 is a output.
FIGURE 4-4:
Typical Application: 9V Battery Operation.
AC POWER
Line
Line
Neutral
D1
10-12V
Neutral
DC
ACDIS
RE46C800
Working
Microcontroller Interface
CO
Sensor
1.5 Mȍ
22 μF
C1
1 Mȍ
R1
Counter
1 Mȍ
100 Kȍ
R8
R7
1 INP
HRNEN 20
2 INN
HB 19
3 VREF
HS 18
4 OPOUT
FEED 17
5 9VDET
VSS 16
6 VDD
LX 15
7 ACDET
8
9
10
Interface with
Interconnected Units
R5
220Kȍ
1 nF
C4
R3
R6
470 Kȍ
LED
LEDPWR 14
LEDEN
VBST
IO1
VREG
IO2
IODIR
13
3.3V
12
11
IO1
IO2
IO2
10 μF
C5
IO1
10 μF
C6
If IODIR is low, then IO1 is an input.
If IODIR is high, then IO1 is a output.
FIGURE 4-5:
Typical Application: AC only.
 2013 Microchip Technology Inc.
DS25172A-page 13
RE46C800
NOTES:
DS25172A-page 14
 2013 Microchip Technology Inc.
RE46C800
5.0
PACKAGING INFORMATION
5.1
Package Marking Information
20-Lead SSOP (5.30 mm)
Example
RE46C800
V/SS e^^3
1308256
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
 2013 Microchip Technology Inc.
DS25172A-page 15
RE46C800
/HDG3ODVWLF6KULQN6PDOO2XWOLQH66±PP%RG\>[email protected]
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120
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±
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'LPHQVLRQLQJDQGWROHUDQFLQJSHU$60(<0
%6& %DVLF'LPHQVLRQ7KHRUHWLFDOO\H[DFWYDOXHVKRZQZLWKRXWWROHUDQFHV
5() 5HIHUHQFH'LPHQVLRQXVXDOO\ZLWKRXWWROHUDQFHIRULQIRUPDWLRQSXUSRVHVRQO\
0LFURFKLS 7HFKQRORJ\ 'UDZLQJ &%
DS25172A-page 16
 2013 Microchip Technology Inc.
RE46C800
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
 2013 Microchip Technology Inc.
DS25172A-page 17
RE46C800
NOTES:
DS25172A-page 18
 2013 Microchip Technology Inc.
RE46C800
APPENDIX A:
REVISION HISTORY
Revision A (March 2013)
• Initial Release of this Document.
 2013 Microchip Technology Inc.
DS25172A-page 19
RE46C800
NOTES:
DS25172A-page 20
 2013 Microchip Technology Inc.
RE46C800
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
Device
X
X
X
Package Number Lead Free/
of Pins Tape and Reel
Device:
RE46C800
RE46C800T
Package:
SS20 = Plastic Shrink Small Outline - Narrow, 5.33 mm Body,
20-Lead (SSOP)
Examples:
a)
b)
RE46C800SS20F: 20LD SSOP package
RE46C800SS20TF: 20LD SSOP package
Tape and Reel
CMOS Carbon Monoxide Detector IC
CMOS Carbon Monoxide Detector IC
(Tape and Reel)
 2013 Microchip Technology Inc.
DS25172A-page 21
RE46C800
NOTES:
DS25172A-page 22
 2013 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,
PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlash
and UNI/O are registered trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MTP, SEEVAL and The Embedded Control Solutions
Company are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Silicon Storage Technology is a registered trademark of
Microchip Technology Inc. in other countries.
Analog-for-the-Digital Age, Application Maestro, BodyCom,
chipKIT, chipKIT logo, CodeGuard, dsPICDEM,
dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial
Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB
Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O,
Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA
and Z-Scale are trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
GestIC and ULPP are registered trademarks of Microchip
Technology Germany II GmbH & Co. KG, a subsidiary of
Microchip Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2013, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 9781620771143
QUALITY MANAGEMENT SYSTEM
CERTIFIED BY DNV
== ISO/TS 16949 ==
 2013 Microchip Technology Inc.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
DS25172A-page 23
Worldwide Sales and Service
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://www.microchip.com/
support
Web Address:
www.microchip.com
Asia Pacific Office
Suites 3707-14, 37th Floor
Tower 6, The Gateway
Harbour City, Kowloon
Hong Kong
Tel: 852-2401-1200
Fax: 852-2401-3431
India - Bangalore
Tel: 91-80-3090-4444
Fax: 91-80-3090-4123
India - New Delhi
Tel: 91-11-4160-8631
Fax: 91-11-4160-8632
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
Denmark - Copenhagen
Tel: 45-4450-2828
Fax: 45-4485-2829
India - Pune
Tel: 91-20-2566-1512
Fax: 91-20-2566-1513
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
Japan - Osaka
Tel: 81-6-6152-7160
Fax: 81-6-6152-9310
Germany - Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
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Tel: 678-957-9614
Fax: 678-957-1455
Boston
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Tel: 774-760-0087
Fax: 774-760-0088
Chicago
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Tel: 630-285-0071
Fax: 630-285-0075
Cleveland
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Tel: 216-447-0464
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Tel: 972-818-7423
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Tel: 248-538-2250
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Tel: 949-462-9523
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Tel: 408-961-6444
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Toronto
Mississauga, Ontario,
Canada
Tel: 905-673-0699
Fax: 905-673-6509
Australia - Sydney
Tel: 61-2-9868-6733
Fax: 61-2-9868-6755
China - Beijing
Tel: 86-10-8569-7000
Fax: 86-10-8528-2104
China - Chengdu
Tel: 86-28-8665-5511
Fax: 86-28-8665-7889
China - Chongqing
Tel: 86-23-8980-9588
Fax: 86-23-8980-9500
Korea - Daegu
Tel: 82-53-744-4301
Fax: 82-53-744-4302
China - Hangzhou
Tel: 86-571-2819-3187
Fax: 86-571-2819-3189
Korea - Seoul
Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
China - Hong Kong SAR
Tel: 852-2943-5100
Fax: 852-2401-3431
Malaysia - Kuala Lumpur
Tel: 60-3-6201-9857
Fax: 60-3-6201-9859
China - Nanjing
Tel: 86-25-8473-2460
Fax: 86-25-8473-2470
Malaysia - Penang
Tel: 60-4-227-8870
Fax: 60-4-227-4068
China - Qingdao
Tel: 86-532-8502-7355
Fax: 86-532-8502-7205
Philippines - Manila
Tel: 63-2-634-9065
Fax: 63-2-634-9069
China - Shanghai
Tel: 86-21-5407-5533
Fax: 86-21-5407-5066
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
China - Shenyang
Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
Taiwan - Hsin Chu
Tel: 886-3-5778-366
Fax: 886-3-5770-955
China - Shenzhen
Tel: 86-755-8864-2200
Fax: 86-755-8203-1760
Taiwan - Kaohsiung
Tel: 886-7-213-7828
Fax: 886-7-330-9305
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
Taiwan - Taipei
Tel: 886-2-2508-8600
Fax: 886-2-2508-0102
China - Xian
Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
UK - Wokingham
Tel: 44-118-921-5869
Fax: 44-118-921-5820
China - Xiamen
Tel: 86-592-2388138
Fax: 86-592-2388130
China - Zhuhai
Tel: 86-756-3210040
Fax: 86-756-3210049
DS25172A-page 24
Japan - Tokyo
Tel: 81-3-6880- 3770
Fax: 81-3-6880-3771
11/29/12
 2013 Microchip Technology Inc.