CMLT5554 SURFACE MOUNT PICOminiTM DUAL,COMPLEMENTARY HIGH VOLTAGE SILICON TRANSISTORS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMLT5554 consists of one 2N5551 NPN silicon transistor and one individual isolated complementary 2N5401 PNP silicon transistor, manufactured by the epitaxial planar process and epoxy molded in an SOT-563 surface mount package. This PICOmini™ device has been designed for high voltage amplifier applications. MARKING CODE: 5C4 SOT-563 CASE MAXIMUM RATINGS: Central TM (TA=25°C) SYMBOL VCBO VCEO VEBO IC PD NPN (Q1) 180 160 6.0 TJ,Tstg ΘJA PNP (Q2) 160 150 5.0 600 350 UNITS V V V mA mW -65 to +150 357 °C °C/W ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) SYMBOL ICBO ICBO ICBO ICBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE fT Cob hfe NF TEST CONDITIONS VCB=120V VCB=100V VCB=120V, TA=100°C VCB=100V, TA=150°C IC=100µA IC=1.0mA IE=10µA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA VCE=5.0V, IC=1.0mA VCE=5.0V, IC=10mA VCE=5.0V, IC=50mA VCE=10V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=5.0V, IC=200µA, RS=10Ω, f=10Hz to 15.7kHz NPN MIN 180 160 6.0 80 80 30 100 50 - (Q1) MAX 50 50 0.15 0.2 1.0 1.0 250 300 6.0 200 8.0 PNP (Q2) MIN MAX 50 50 160 150 5.0 0.2 0.5 1.0 1.0 50 60 240 50 100 300 6.0 40 200 8.0 UNITS nA nA µA µA V V V V V V V MHz pF dB R0 (26-October 2004) Central CMLT5554 TM SURFACE MOUNT PICOminiTM DUAL,COMPLEMENTARY HIGH VOLTAGE SILICON TRANSISTORS Semiconductor Corp. SOT-563 CASE - MECHANICAL OUTLINE D E A 6 E 5 4 B G 1 C F 3 2 H R0 LEAD CODE: 1) EMITTER Q1 2) BASE Q1 3) COLLECTOR Q2 4) EMITTER Q2 5) BASE Q2 6) COLLECTOR Q1 MARKING CODE: 5C4 R0 (26-October 2004)