Freescale Semiconductor Technical Data Document Number: MW6IC2420N Rev. 0, 3/2007 RF LDMOS Integrated Power Amplifier The MW6IC2420NB integrated circuit is designed with on - chip matching that makes it usable at 2450 MHz. This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical industrial, scientific and medical modulation formats. Driver Applications • Typical CW Performance at 2450 MHz: VDD = 28 Volts, IDQ1 = 210 mA, IDQ2 = 370 mA, Pout = 20 Watts Power Gain — 19.5 dB Power Added Efficiency — 27% • Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 20 Watts CW Output Power • Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 10 W CW Pout. MW6IC2420NBR1 2450 MHz, 20 W, 28 V CW RF LDMOS INTEGRATED POWER AMPLIFIER Features • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source Scattering Parameters • On - Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output) • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function • Integrated ESD Protection • 200°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel VDS1 RFin RFout/VDS2 VGS1 Quiescent Current Temperature Compensation VGS2 VDS1 Figure 1. Functional Block Diagram CASE 1329 - 09 TO - 272 WB - 16 PLASTIC GND VDS1 NC NC NC 1 2 3 4 5 16 15 GND NC RFin 6 14 NC VGS1 VGS2 VDS1 GND 7 8 9 10 11 RFout / VDS2 13 12 NC GND (Top View) Note: Exposed backside of the package is the source terminal for the transistors. Figure 2. Pin Connections © Freescale Semiconductor, Inc., 2007. All rights reserved. RF Device Data Freescale Semiconductor MW6IC2420NBR1 1 Table 1. Maximum Ratings Symbol Value Unit Drain - Source Voltage Rating VDSS - 0.5, +68 Vdc Gate - Source Voltage VGS - 0.5, +6 Vdc Storage Temperature Range Tstg - 65 to +200 °C Operating Junction Temperature TJ 200 °C Input Power Pin 23 dBm Symbol Value (1) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case W - CDMA Application (Pout = 4.5 W Avg.) RθJC °C/W Stage 1, 28 Vdc, IDQ = 210 mA Stage 2, 28 Vdc, IDQ = 370 mA 1.8 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1A (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) III (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale Wideband 2110 - 2170 MHz Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 210 mA, IDQ2 = 370 mA, Pout = 4.5 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Gps 25.5 28 30 dB Power Added Efficiency PAE 13.7 15 — % Intermodulation Distortion IM3 — - 43 - 40 dBc ACPR — - 46 - 43 dBc IRL — - 15 - 10 dB Adjacent Channel Power Ratio Input Return Loss 1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (continued) MW6IC2420NBR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 210 mA, IDQ2 = 370 mA, 2110 - 2170 MHz Video Bandwidth @ 20 W PEP Pout where IM3 = - 30 dBc VBW MHz — 30 — (Tone Spacing from 100 kHz to VBW) ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both sidebands) Quiescent Current Accuracy over Temperature with 18 kΩ Gate Feed Resistors ( - 10 to 85°C) (1) ΔIQT — ±5 — % Gain Flatness in 30 MHz Bandwidth @ Pout = 1 W CW GF — 0.2 — dB Average Deviation from Linear Phase in 30 MHz Bandwidth @ Pout = 1 W CW Φ — 2 — ° Delay — 2.8 — ns ΔΦ — 18 — ° Symbol Min Typ Max Unit Average Group Delay @ Pout = 1 W CW Including Output Matching Part - to - Part Insertion Phase Variation @ Pout = 1 W CW, Six Sigma Window Table 6. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 110 mA, IDQ2 = 370 mA, 2110 - 2170 MHz Saturated Pulsed Output Power (8 μsec(on), 1 msec(off)) Psat — 60 — W 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977. MW6IC2420NBR1 RF Device Data Freescale Semiconductor 3 1 2 3 NC 4 NC 5 VDS1 C1 RF INPUT Z1 Z2 DUT VDS2 16 C2 NC 15 C11 Z10 Z3 14 Z4 Z5 C6 Z6 Z7 Z8 Z9 RF OUTPUT 6 C14 C15 7 NC 8 9 VGS1 R1 NC C5 10 11 C8 C7 Quiescent Current Temperature Compensation C9 C10 Z11 NC 13 12 VGS C4 C3 VGS2 R2 C12 C13 NC Z1 Z2 Z3, Z8 Z4 Z5 0.510″ 0.300″ 0.410″ 0.138″ 0.086″ x 0.054″ x 0.054″ x 0.054″ x 0.237″ x 0.237″ Microstrip Microstrip Microstrip Microstrip Microstrip Z6 Z7 Z9 Z10, Z11 PCB 0.189″ x 0.237″ Microstrip 0.127″ x 0.054″ Microstrip 0.182″ x 0.054″ Microstrip 1.073″ x 0.054″ Microstrip Taconic RF35, 0.020″, εr = 3.5 Figure 3. MW6IC2420NBR1 Test Circuit Schematic — 2450 MHz Table 7. MW6IC2420NBR1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2, C3, C4 2.2 μF Chip Capacitors C32225X5R1H225MT TDK C5, C13 100 nF Chip Capacitors C1206C104K1KAC Kemet C6, C7 0.5 pF Chip Capacitors 08051J0R5BS AVX C8 6.8 pF Chip Capacitor 08051J6R8BS AVX C9 2.2 pF Chip Capacitor 08051J2R2BS AVX C10 1 pF Chip Capacitor 08051J1R0BS AVX C11, C12 5.6 pF Chip Capacitors 08051J5R6BS AVX C14 0.3 pF Chip Capacitor ATC100B0R3BT500XT ATC C15 0.5 pF Chip Capacitor ATC100B0R5BT500XT ATC R1, R2 5 kΩ Potentiometer CMS Cermet Multi - turn 3224W - 1 - 502E Bourns MW6IC2420NBR1 4 RF Device Data Freescale Semiconductor VDS2 VDS1 C2 C11 C1 MW6IC2420 Rev. 0 C9 C6 C14 C10 C8 C15 C7 C5 C13 C4 R1 R2 C12 C3 VGS Figure 4. MW6IC2420NBR1 Test Circuit Component Layout — 2450 MHz MW6IC2420NBR1 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS — 2450 MHz 40 VDD = 32 V 30 V 35 23 Gps, POWER GAIN (dB) 28 V 22 30 Gps 25 21 20 20 PAE 15 19 28 V 18 32 V 10 IDQ1 = 210 mA IDQ2 = 370 mA f = 2450 MHz 30 V 17 5 16 PAE, POWER ADDED EFFICIENCY (%) 24 0 1 10 50 Pout, OUTPUT POWER (WATTS) CW Figure 5. Power Gain and Power Added Efficiency versus CW Output Power as a Function of VDD 22 Gps, POWER GAIN (dB) 21.5 35 Gps 21 30 20.5 25 20 20 19.5 15 VDD = 28 V IDQ1 = 210 mA IDQ2 = 370 mA f = 2450 MHz 19 18.5 PAE 18 0.5 1 10 5 PAE, POWER ADDED EFFICIENCY (%) 40 0 50 10 Pout, OUTPUT POWER (WATTS) CW Figure 6. Power Gain and Power Added Efficiency versus CW Output Power 109 24 23 IDQ = 620 mA 1st Stage 21 580 mA MTTF (HOURS) Gps, POWER GAIN (dB) 108 22 540 mA 20 19 18 106 2nd Stage 105 Gps VDD = 28 V f = 2450 MHz 17 107 104 16 0.5 1 10 Pout, OUTPUT POWER (WATTS) CW Figure 7. Power Gain and Power Added Efficiency versus CW Output Power as a Function of Total IDQ 50 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 20 W Avg., and PAE = 27%. MTTF calculator available at http:/www.freescale.com/rf. Select Tools/ Software/Application Software/Calculators to access the MTTF calcu− lators by product. Figure 8. MTTF versus Junction Temperature MW6IC2420NBR1 6 RF Device Data Freescale Semiconductor Zo = 50 Ω Zload Zsource f = 2450 MHz f = 2450 MHz VDD = 28 Vdc, IDQ1 = 210 mA, IDQ2 = 370 mA, Pout = 20 W CW f MHz Zsource W Zload W 2450 54.8 + j16.6 0.42 + j4.3 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 9. Series Equivalent Source and Load Impedance MW6IC2420NBR1 RF Device Data Freescale Semiconductor 7 PACKAGE DIMENSIONS MW6IC2420NBR1 8 RF Device Data Freescale Semiconductor MW6IC2420NBR1 RF Device Data Freescale Semiconductor 9 MW6IC2420NBR1 10 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Mar. 2007 Description • Initial Release of Data Sheet MW6IC2420NBR1 RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 [email protected] Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007. All rights reserved. MW6IC2420NBR1 Document Number: MW6IC2420N Rev. 0, 3/2007 12 RF Device Data Freescale Semiconductor