ONSEMI MC74LVX541MELG

MC74LVX541
Octal Bus Buffer
The MC74LVX541 is an advanced high speed CMOS octal bus
buffer fabricated with silicon gate CMOS technology. It achieves high
speed operation similar to equivalent Bipolar Schottky TTL while
maintaining CMOS low power dissipation.
The MC74LVX541 is a noninverting type. When either OE1 or OE2
are high, the terminal outputs are in the high impedance state.
The internal circuit is composed of three stages, including a buffer
output which provides high noise immunity and stable output. The
inputs tolerate voltages up to 7.0 V, allowing the interface of 5.0 V
systems to 3.0 V systems.
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MARKING
DIAGRAMS
20
Features
•
•
•
•
•
•
•
•
•
•
•
•
High Speed: tPD = 5.0 ns (Typ) at VCC = 3.3 V
Low Power Dissipation: ICC = 4 A (Max) at TA = 25°C
High Noise Immunity: VNIH = VNIL = 28% VCC
Power Down Protection Provided on Inputs
Balanced Propagation Delays
Designed for 2 V to 3.6 V Operating Range
Low Noise: VOLP = 1.2 V (Max)
Pin and Function Compatible with Other Standard Logic Families
Latchup Performance Exceeds 300 mA
Chip Complexity: 134 FETs or 33.5 Equivalent Gates
ESD Performance:
Human Body Model > 2000 V;
Machine Model > 200 V
Pb−Free Packages are Available*
20
1
SOIC−20
DW SUFFIX
CASE 751D
LVX541
AWLYYWW
1
20
20
1
LVX
541
ALYW
TSSOP−20
DT SUFFIX
CASE 948E
1
20
20
1
SOEIAJ−20
M SUFFIX
CASE 967
1
A
L, WL
Y, YY
W, WW
=
=
=
=
74LVX541
AWLYWW
Assembly Location
Wafer Lot
Year
Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2005
March, 2005 − Rev. 2
1
Publication Order Number:
MC74LVX541/D
MC74LVX541
A1
A2
A3
A4
DATA
INPUTS
A5
A6
A7
A8
OE1
OUTPUT
ENABLES
OE2
2
18
3
17
4
16
5
15
6
14
7
13
8
12
9
11
Y1
Y2
Y3
Y4
NONINVERTING
OUTPUTS
Y5
Y6
Y7
Y8
1
19
Figure 1. LOGIC DIAGRAM
QE1
OE1
1
20
VCC
A1
2
19
OE2
A2
3
18
Y1
A3
4
17
Y2
A4
5
16
Y3
A3
A5
6
15
Y4
A4
A6
7
14
Y5
A5
A7
8
13
Y6
A6
A8
9
12
Y7
A7
10
11
Y8
A8
GND
QE2
A1
A2
Figure 2. PIN ASSIGNMENT
1
&
EN
19
2
3
1
18
17
4
16
5
15
6
14
7
13
8
12
9
11
Figure 3. IEC LOGIC DIAGRAM
FUNCTION TABLE
Inputs
Output Y
OE1
OE2
A
L
L
H
X
L
L
X
H
L
H
X
X
L
H
Z
Z
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2
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
MC74LVX541
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MAXIMUM RATINGS
Symbol
Value
Unit
VCC
DC Supply Voltage
Parameter
– 0.5 to + 7.0
V
Vin
DC Input Voltage
– 0.5 to + 7.0
V
Vout
DC Output Voltage
– 0.5 to VCC + 0.5
V
IIK
Input Diode Current
− 20
mA
IOK
Output Diode Current
± 20
mA
Iout
DC Output Current, per Pin
± 25
mA
ICC
DC Supply Current, VCC and GND Pins
± 50
mA
PD
Power Dissipation in Still Air,
500
450
mW
Tstg
Storage Temperature
– 65 to + 150
°C
SOIC Packages†
TSSOP Package†
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance circuit. For proper operation, Vin and
Vout should be constrained to the
range GND (Vin or Vout) VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or V CC ).
Unused outputs must be left open.
Maximum ratings are those values beyond which device damage can occur. Maximum ratings
applied to the device are individual stress limit values (not normal operating conditions) and are not
valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
†Derating — SOIC Packages: – 7 mW/°C from 65° to 125°C
TSSOP Package: − 6.1 mW/°C from 65° to 125°C
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RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
VCC
DC Supply Voltage
2.0
3.6
V
Vin
DC Input Voltage
0
5.5
V
Vout
DC Output Voltage
0
VCC
V
−40
+ 85
°C
0
100
ns/V
TA
Operating Temperature, All Package Types
tr, tf
Input Rise and Fall Time
VCC = 3.3V ±0.3V
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
TA = 25°C
VCC
V
Min
1.50
2.0
2.4
VIH
Minimum High−Level Input Voltage
2.0
3.0
3.6
VIL
Maximum Low−Level Input Voltage
2.0
3.0
3.6
VOH
Minimum High−Level Output Voltage
Vin
i = VIH or VIL
IOH = − 50 A
IOH = − 50 A
IOH = − 4 mA
2.0
30
3.0
3.0
VOL
Maximum Low−Level Output Voltage
Vin
i = VIH or VIL
IOL = 50 A
IOL = 50 A
IOL = 4 mA
2.0
30
3.0
3.0
Iin
Maximum Input Leakage Current
Vin = 5.5 V or GND
IOZ
Maximum Three−State Leakage
Current
ICC
Maximum Quiescent Supply Current
Typ
TA = − 40 to 85°C
Max
Min
1.50
2.0
2.4
0.50
0.80
0.80
1.9
29
2.9
2.58
Max
2.0
30
3.0
V
0.50
0.80
0.80
1.9
29
2.9
2.48
V
V
0.1
01
0.1
0.36
0.1
01
0.1
0.44
V
0 to
3.6
±0.1
±1.0
A
Vin = VIL or VIH
Vout = VCC or GND
3.6
±0.2
5
±2.5
A
Vin = VCC or GND
3.6
4.0
40.0
A
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3
0.0
00
0.0
Unit
MC74LVX541
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AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns)
TA = 25°C
Symbol
tPLH,
tPHL
tPZL,
tPZH
tPLZ,
tPHZ
tOSLH,
tOSHL
Parameter
Maximum Propagation Delay,
A to Y
Output Enable TIme,
OE to Y
Output Disable Time,
OE to Y
Output to Output Skew
Test Conditions
Min
TA = − 40 to 85°C
Typ
Max
Min
Max
Unit
ns
VCC = 2.7 V
CL = 15 pF
CL = 50 pF
5.0
7.5
7.0
10.5
1.0
1.0
8.5
12.0
VCC = 3.3 ± 0.3 V
CL = 15 pF
CL = 50 pF
3.5
5.0
5.0
7.0
1.0
1.0
6.0
8.0
VCC = 2.7 V
RL = 1 k
CL = 15 pF
CL = 50 pF
6.8
9.3
10.5
14.0
1.0
1.0
12.5
16.0
VCC = 3.3 ± 0.3 V
RL = 1 k
CL = 15 pF
CL = 50 pF
4.7
6.2
7.2
9.2
1.0
1.0
8.5
10.5
VCC = 2.7 V
RL = 1 k
CL = 50 pF
11.2
15.4
1.0
17.5
VCC = 3.3 ± 0.3 V
RL = 1 k
CL = 50 pF
6.0
8.8
1.0
10.0
VCC = 2.7 V
(Note 1)
CL = 50 pF
1.5
1.5
ns
VCC = 3.3 ± 0.3 V
(Note 1)
CL = 50 pF
1.0
1.0
ns
10
10
pF
Cin
Maximum Input Capacitance
4.0
Cout
Maximum Three−State Output
Capacitance
(Output in High Impedance
State)
6.0
ns
ns
pF
Typical @ 25°C, VCC = 5.0V
CPD
18
Power Dissipation Capacitance (Note 2)
pF
1. Parameter guaranteed by design. tOSLH = |tPLHm − tPLHn|, tOSHL = |tPHLm − tPHLn|.
2. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC / 8 (per bit). CPD is used to determine the no−load
dynamic power consumption; PD = CPD VCC2 fin + ICC VCC.
NOISE CHARACTERISTICS (Input tr = tf = 3.0 ns, CL = 50 pF, VCC = 3.3 V)
TA = 25°C
Symbol
Parameter
Typ
Max
Unit
VOLP
Quiet Output Maximum Dynamic VOL
0.5
0.8
V
VOLV
Quiet Output Minimum Dynamic VOL
−0.5
−0.8
V
VIHD
Minimum High Level Dynamic Input Voltage
2.0
V
VILD
Maximum Low Level Dynamic Input Voltage
0.8
V
SWITCHING WAVEFORMS
VCC
OE1 or OE2
VCC
A
50%
Y
tPZL
GND
tPLH
50%
50%
tPHL
Y
50% VCC
tPZH
50% VCC
Y
Figure 4.
4
HIGH
IMPEDANCE
VOL +0.3 V
tPHZ
50% VCC
Figure 5.
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GND
tPLZ
VOH −0.3 V
HIGH
IMPEDANCE
MC74LVX541
TEST CIRCUITS
TEST
POINT
TEST
POINT
OUTPUT
DEVICE
UNDER
TEST
OUTPUT
DEVICE
UNDER
TEST
CL*
*Includes all probe and jig capacitance
CONNECT TO VCC WHEN
TESTING tPLZ AND tPZL.
CONNECT TO GND WHEN
TESTING tPHZ AND tPZH.
1 k
CL*
*Includes all probe and jig capacitance
Figure 6.
Figure 7.
INPUT
Figure 8. INPUT EQUIVALENT CIRCUIT
ORDERING INFORMATION
Package
Shipping†
MC74LVX541DW
SOIC−20
38 Units / Rail
MC74LVX541DWG
SOIC−20
(Pb−Free)
38 Units / Rail
MC74LVX541DTR2
TSSOP−20*
2500 Tape & Reel
MC74LVX541M
SOEIAJ−20
40 Units / Rail
MC74LVX541MG
SOEIAJ−20
(Pb−Free)
40 Units / Rail
MC74LVX541MEL
SOEIAJ−20
2000 Tape & Reel
MC74LVX541MELG
SOEIAJ−20
(Pb−Free)
2000 Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently Pb−Free.
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5
MC74LVX541
PACKAGE DIMENSIONS
SOIC−20
DW SUFFIX
CASE 751D−05
ISSUE G
20
11
X 45 h
1
10
20X
DIM
A
A1
B
C
D
E
e
H
h
L
B
B
0.25
M
T A
B
S
S
A
L
H
M
E
0.25
10X
NOTES:
1. DIMENSIONS ARE IN MILLIMETERS.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSIONS D AND E DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
5. DIMENSION B DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE PROTRUSION
SHALL BE 0.13 TOTAL IN EXCESS OF B
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
A
B
M
D
e
18X
MILLIMETERS
MIN
MAX
2.35
2.65
0.10
0.25
0.35
0.49
0.23
0.32
12.65
12.95
7.40
7.60
1.27 BSC
10.05
10.55
0.25
0.75
0.50
0.90
0
7
SEATING
PLANE
A1
C
T
TSSOP−20
DT SUFFIX
CASE 948E−02
ISSUE B
20X
0.15 (0.006) T U
2X
K REF
0.10 (0.004)
S
L/2
20
M
T U
S
V
S
K
K1
ÍÍÍÍ
ÍÍÍÍ
ÍÍÍÍ
11
J J1
B
−U−
L
PIN 1
IDENT
SECTION N−N
1
10
0.25 (0.010)
N
0.15 (0.006) T U
S
M
A
−V−
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION:
MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE
MOLD FLASH, PROTRUSIONS OR GATE
BURRS. MOLD FLASH OR GATE BURRS
SHALL NOT EXCEED 0.15 (0.006) PER
SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION
SHALL NOT EXCEED 0.25 (0.010) PER
SIDE.
5. DIMENSION K DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08
(0.003) TOTAL IN EXCESS OF THE K
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. TERMINAL NUMBERS ARE SHOWN
FOR REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
N
F
DETAIL E
−W−
C
D
G
H
DETAIL E
0.100 (0.004)
−T− SEATING
PLANE
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6
DIM
A
B
C
D
F
G
H
J
J1
K
K1
L
M
MILLIMETERS
MIN
MAX
6.40
6.60
4.30
4.50
−−−
1.20
0.05
0.15
0.50
0.75
0.65 BSC
0.27
0.37
0.09
0.20
0.09
0.16
0.19
0.30
0.19
0.25
6.40 BSC
0
8
INCHES
MIN
MAX
0.252
0.260
0.169
0.177
−−−
0.047
0.002
0.006
0.020
0.030
0.026 BSC
0.011
0.015
0.004
0.008
0.004
0.006
0.007
0.012
0.007
0.010
0.252 BSC
0
8
MC74LVX541
PACKAGE DIMENSIONS
SOEIAJ−20
M SUFFIX
CASE 967−01
ISSUE O
20
LE
11
Q1
E HE
1
M
L
10
DETAIL P
Z
D
VIEW P
e
A
c
DIM
A
A1
b
c
D
E
e
HE
L
LE
M
Q1
Z
A1
b
0.13 (0.005)
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH OR PROTRUSIONS AND ARE MEASURED
AT THE PARTING LINE. MOLD FLASH OR
PROTRUSIONS SHALL NOT EXCEED 0.15 (0.006)
PER SIDE.
4. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
5. THE LEAD WIDTH DIMENSION (b) DOES NOT
INCLUDE DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08 (0.003)
TOTAL IN EXCESS OF THE LEAD WIDTH
DIMENSION AT MAXIMUM MATERIAL CONDITION.
DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OR THE FOOT. MINIMUM SPACE
BETWEEN PROTRUSIONS AND ADJACENT LEAD
TO BE 0.46 ( 0.018).
0.10 (0.004)
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7
MILLIMETERS
MIN
MAX
−−−
2.05
0.05
0.20
0.35
0.50
0.18
0.27
12.35
12.80
5.10
5.45
1.27 BSC
7.40
8.20
0.50
0.85
1.10
1.50
10 0
0.70
0.90
−−−
0.81
INCHES
MIN
MAX
−−−
0.081
0.002
0.008
0.014
0.020
0.007
0.011
0.486
0.504
0.201
0.215
0.050 BSC
0.291
0.323
0.020
0.033
0.043
0.059
10 0
0.028
0.035
−−−
0.032
MC74LVX541
ON Semiconductor and
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For additional information, please contact your
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MC74LVX541/D