MMVL109T1 Preferred Device Silicon Epicap Diodes Designed for general frequency control and tuning applications; providing solid−state reliability in replacement of mechanical tuning methods. Features • • • • High Q with Guaranteed Minimum Values at VHF Frequencies Controlled and Uniform Tuning Ratio Surface Mount Package Pb−Free Package is Available http://onsemi.com 26−32 pF VOLTAGE VARIABLE CAPACITANCE DIODES 1 CATHODE MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 30 Vdc Peak Forward Current IF 200 mAdc Symbol Max Unit 200 1.57 mW mW/°C 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board TA = 25°C (Note 1) Derate above 25°C 2 ANODE 1 PLASTIC SOD−323 CASE 477 STYLE 1 PD Thermal Resistance, Junction−to−Ambient RqJA 635 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 Minimum Pad MARKING DIAGRAM 4A M G G 4A = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping † MMVL109T1 SOD−323 3000 / Tape & Reel MMVL109T1G SOD−323 3000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 1 1 Publication Order Number: MMVL109T1/D MMVL109T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Reverse Breakdown Voltage (IR = 10 mAdc) Symbol Min Typ Max Unit V(BR)R 30 − − Vdc IR − − 0.1 mAdc TCC − 300 − ppm/°C Reverse Voltage Leakage Current (VR = 25 Vdc) Diode Capacitance Temperature Coefficient (VR = 3.0 Vdc, f = 1.0 MHz) Device MMVL109T1 Ct, Diode Capacitance VR = 3.0 Vdc, f = 1.0 MHz pF Q, Figure of Merit VR = 3.0 Vdc f = 50 MHz CR, Capacitance Ratio C3/C25 f = 1.0 MHz (Note 2) Min Nom Max Min Min Max 26 29 32 200 5.0 6.5 2. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 25 Vdc. 40 1000 32 Q, FIGURE OF MERIT CT , CAPACITANCE − pF 36 28 24 20 16 12 VR = 3 Vdc TA = 25°C 100 f = 1.0 MHz TA = 25°C 8 4 1 3 10 30 10 100 1000 Figure 1. DIODE CAPACITANCE Figure 2. FIGURE OF MERIT VR = 20 Vdc 2.0 1.0 0.6 0.2 0.1 0.06 −40 100 f, FREQUENCY (MHz) 100 60 20 10 6.0 0.02 0.01 0.006 0.002 0.001 −60 10 VR, REVERSE VOLTAGE (VOLTS) C t , DIODE CAPACITANCE (NORMALIZED) I R , REVERSE CURRENT (nA) 0 −20 0 +20 +40 +60 1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 −75 +80 +100 +120 +140 VR = 3.0 Vdc f = 1.0 MHz Ct [ Cc + Cj −50 −25 0 +25 +50 +75 TA, AMBIENT TEMPERATURE TA, AMBIENT TEMPERATURE Figure 3. LEAKAGE CURRENT Figure 4. DIODE CAPACITANCE http://onsemi.com 2 +100 +125 MMVL109T1 PACKAGE DIMENSIONS SOD−323 CASE 477−02 ISSUE G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. HE D b 1 2 E MILLIMETERS DIM MIN NOM MAX A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A3 0.15 REF b 0.25 0.32 0.4 C 0.089 0.12 0.177 D 1.60 1.70 1.80 E 1.15 1.25 1.35 L 0.08 HE 2.30 2.50 2.70 A3 A C NOTE 3 L NOTE 5 A1 INCHES NOM MAX 0.035 0.040 0.002 0.004 0.006 REF 0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105 MIN 0.031 0.000 STYLE 1: PIN 1. CATHODE 2. ANODE SOLDERING FOOTPRINT* 0.63 0.025 0.83 0.033 1.60 0.063 2.85 0.112 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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