Ordering number : EN8798 Monolithic Digital IC LB11980H For VCR Capstan Three-Phase Brushless Motor Driver Overview LB11980H is a 3-phase brushless motor driver optimal for driving the VCR capstan motors. Features • 3-Phase full-wave current-linear drive system. • Torque ripple correction circuit built-in.(correction factor variable) • Current limiter circuit built in. • Output stage upper/lower over-saturation prevention circuit built in. (No external capacitor required) • FG amplifier built in. • Thermal shutdown circuit built in. Absolute Maximum Ratings at Ta = 25°C Parameter Maximum supply voltage Symbol Conditions Ratings VCC max Unit 7 V VS max 25 V Maximum output current IO max 1.3 A Allowable power dissipation Pd max 1.81 W Mounted on a specified board * 0.77 W Operating temperature Topr Independent IC -20 to +75 °C Storage temperature Tstg -55 to +150 °C * Mounted on a specified board: 114mm×71.1mm×1.6mm, glass epoxy board Allowable Operating Range at Ta = 25°C Parameter Supply voltage Symbol Conditions VS GSENSE input range VHALL VGSENSE Unit 5 to 24 VCC Hall input amplitude Ratings Between hall inputs With respect to the control system ground V 4.5 to 5.5 V ±30 to ±80 mVo-p -0.20 to +0.20 V Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before using any SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. D2706 MS IM B8-5775 No.8798-1/11 LB11980H Electrical Characteristics at Ta = 25°C, VCC = 5V, VS = 15V Ratings Parameter VCC supply current Symbol Conditions min typ Unit max RL = ∞, VCTL = 0, VLIM = 0V (Quiescent) 12 18 mA VOsat1 IO = 500mA, Rf = 0.5Ω, sink+source VCTL = VLIM = 5V (With saturation prevention) 2.1 2.6 V VOsat2 IO = 1.0A, Rf = 0.5Ω, sink+source VCTL = VLIM = 5V (With saturation prevention) 2.6 3.5 V 1.0 mA ICC Output Output saturation voltage Output leakage current IOleak FR FR pin input threshold voltage VFSR FR pin input input bias current Ib (FSR) VFR = 3V 1.0 1.25 2 V 100 150 200 µA Control CTL pin input Input bias current CTL pin input motor current Ib (CTL) VCTL = 5V Imctl VCTL = 0V 1.5 3 µA 5 mA CTL pin control start voltage VCTL (ST) Rf = 0.5Ω, VLIM = 5V, IO ≥ 10mA Hall input logic fixed (U, V, W = H, H, L) 2.25 2.50 2.75 V CTL pin control Gm Gm (CTL) Rf = 0.5Ω, ∆IO = 200mA Hall input logic fixed (U, V, W = H, H, L) 0.86 1.06 1.26 A/V 1.5 3 µA 5 mA Current limit LIM pin input current Ilim VLIM = 3V LIM pin motor current Imlim VLIM = 0V LIM current limit offset voltage Voff (LIM) LIM pin control Gm Gm (lim) Rf = 0.5Ω, VCTL = 5V, IO ≥ 10mA Hall input logic fixed (U, V, W = H, H, L) Rf = 0.5Ω, VCTL = 5V 1.0 1.25 1.5 V 0.59 0.71 0.83 A/V +6 mV 3.0 µA 3.3 V Hall input logic fixed (U, V, W = H, H, L) Hall amplifier Hall amplifier input offset voltage VOFF -6 (HALL) Hall amplifier input bias current Hall amplifier common-mode Ib (HALL) 1.0 VCM (HALL) 1.3 input voltage TRC Torque ripple correction ratio TRC For the high and low peaks in the Rf waveform when 13 % IO = 200mA (Rf = 0.5Ω, ADJ-OPEN) Note.2 ADJ pin voltage VADJ 2.37 2.50 2.63 V FG Amplifier FG amplifier input offset voltage VOFF (FG) FG amplifier input bias current Ib (FG) FG amplifier output saturation VOsat (FG) -8 +8 -100 Sink side; With internal pull-up resistance load mV nA 0.5 0.6 V 44.5 47.5 dB 4.0 V 51.0 % 0.2 V 60 mV voltage FG amplifier voltage gain VG (FG) FG amplifier common-mode input VCM (FG) For open loop at f = 10kHz 41.5 0.5 voltage Schmitt amplifier Duty ratio DUTY Under specified conditions (RF = 39kΩ) Note 3 Upper side output saturation voltage Vsatu (SH) IO = -20µA Lower side output saturation voltage Vsatd (SH) IO = 100µA Hysteresis width Vhys FGS output pin pull-up resistance RFGout 49.0 50 4.8 32 V 46 4.7 kΩ Saturation Saturation prevention circuit lower set voltage VO sat (DET) Voltage between each OUT and Rf with T-TSD (Design target) Note.1 0.175 0.25 0.325 V IO = 10mA, Rf = 0.5Ω, VCTL = VLIM = 5V TSD TSD operating temperature 180 °C Note 1. No measurements are made on the parameters with Note (Design target). No.8798-2/11 LB11980H Note 2. The torque ripple compensation ratio is determined as follows from the Rf voltage waveform. Vp Vb III II I IV V VI Each hall logic setting GND level 2* (Vp - Vb) Correnction ratio = 100* (%) Vp + Vb Note 3. Apply the sine wave of 1kHz, 20mVP-P under conditions with a sample circuit installed externally as shown above. Package Dimensions unit : mm (typ) 3233B HEAT SPREADER 15.2 (6.2) 0.65 7.9 10.5 15 (4.9) 28 1 14 0.8 0.25 2.0 0.1 (2.25) 0.3 2.7 SANYO : HSOP28H(375mil) Pd max - Ta 2.0 Allowable power dissipation, Pd max - W 2.45max (0.8) Mounted on a specified board (114mm×71.1mm×1.6mm glass epoxy) 1.81 1.8 1.6 1.4 1.2 1.0 0.77 1.09 Independent IC 0.8 0.6 0.46 0.4 0.2 0 -20 0 20 25 40 60 Ambient temperature, Ta - °C 75 80 100 ILB01492 No.8798-3/11 LB11980H Pin Assignment WOUT 1 28 VOUT NC 2 27 UOUT NC 3 26 NC RF 4 25 NC GSENSE 5 24 RF FR 6 23 ADJ GND 7 22 VS FRAME GND FRAME GND LB11980H FGIN- 8 21 VCC FGIN+ 9 20 HW- FGOUT 10 19 HW+ FGS 11 18 HV- CTL 12 17 HV+ LIM 13 16 HU- FC 14 15 HU+ Top view No.8798-4/11 LB11980H Block Diagram 12 Output stage FC VS VIN- WIN+ Combined output V ( linear matrix) VIN+ Hall input combination block U UIN- logarithmic compression block UIN+ U U-OUT V V-OUT W W-OUT Logarithmic inverse transformation Rf (PWR) W Upper saturation prevention control WIN- gm Rf (SENSE) gm Differential distribution and torque ripple correction block Drive distribution circuit & lower saturation prevention control ADJ Control amplifier CTL Feedback amplifier Approx.1/2VCC LIMREF GSENSE LIM FR Forward/ reverse selection FG amplifier TSD FGIN+ FGIN- FGOUT GND FGS VCC Reference voltage Bandgap 1.25V No.8798-5/11 LB11980H Truth Table and Control Function Hall input Source → Sink V→W 1 W→V U→W 2 U→V W→V W→U H L L V→U H L H H L U→V L L L U→W 6 H L V→W 5 W H V→U 4 V H W→U 3 U H H L FR H L H L H L H L H L H L Note: “H” in the FR column represents a voltage of 2.75V or more. “L” represents a voltage of 2.25V or less. (At VCC = 5V) Note: “H” under the Hall Input columns represents a state in which “+” has a potential which is higher by 0.01V or more than that of the “-” phase inputs. Conversely “L” represents a state in which “+” has a potential which is lower by 0.01V or more than that of the “-” phase inputs. Note: Since a 180° energized system is used as a drive system, other phases than the sink and source are not OFF. [Control Function & Current Limiter Function] Control characteristics VLIM = 5V Current limiter characteristics VCTL = 5V 1OUT 1OUT Gm = 1.06A/Vtyp 2.50Vtyp Slope = 0.71A/Vtyp VLIM VCTL 0 1 2 3 4 5 0 1 2 3 4 1.25Vtyp No.8798-6/11 LB11980H Pin Functions Pin name Pin no FR 6 GND 7 Functions Forward/reverse select pin. This pin voltage determines forward/reverse. (Vth = 1.25V TYP at VCC = 5V) GND for others than the output transistor. Minimum potential of output transistor is at Rf pin. FGIN (-) 8 Input pin for the FG amplifier to be used with inverted input. A feedback resistor is connected between this pin and FG OUT. FGIN (+) 9 Non-inverted input pin for the FG amplifier to be used as differential input. No bias is applied internally. FG-OUT 10 FG amplifier output pin. Resistive load provided internally. CTL 12 Speed control pin. Control is performed by means of constant current drive which is applied by current feedback from Rf. Gm = 1.06A/VTYP at Rf = 0.5Ω LIM 13 Current limiter function control pin. This pin voltage is capable of varying the output current linearly. Slope = 0.71A/VTYP at Rf = 0.5Ω FC 14 UIN+, UINVIN+, VIN- 15, 16 U-phase Hall device input pin; logic “H” presents IN+>IN- Speed control loop’s frequency characteristics correction pin. 17, 18 V-phase Hall device input pin; logic “H” presents IN+>IN- WIN+, WIN- 19, 20 W-phase Hall device input pin; logic “H” presents IN+>IN- VCC 21 Power supply pin for supplying power to all circuits expect output section in IC; this voltage must be stabilized so as to eliminate ripple and noise. VS 22 ADJ 23 Power supply pin for supplying power to output section in IC. Pin to be used to adjust the torque ripple correction factor externally. When adjusting the correction factor, apply voltage externally to the ADJ pin through a low impedance. Increasing the applied voltage decreases the correction factor; lowering the applied voltage increases the correction factor. The rate of change, when left open, ranges approximately from 0 to 2 times. (Approximately VCC/2 is set internally and the input impedance is approximately 5kΩ.) Rf (PWR) 24 Output current detection pins. Current feedback is provided to the control blocks by connecting Rf between the pins and Rf (SNS) 4 GND. The operation of the lower over-saturation prevention circuit and torque ripple correction circuit depends on the pin voltage. In particular, since the oversaturation prevention level is set by the pin voltage, decreasing the Rf value extermely may cause the lower over-saturation prevention to work less efficiently in the large current region. The PWR pin and SENSE pin must be connected. FGS 11 FG Schmidt amp output pin, that is pulled up with 4.7kΩ. UOUT VOUT 27 U-phase output pin. 28 V-phase output pin. WOUT 1 W-phase output pin. GSENSE 5 (Built-in spark killer diode) GND sensing pin. By connecting this pin to GND in the vicinity of the Rf resistor side of the Rf included motor GND wiring, the influence that the GND common impedance exerts on Rf can be excluded. (Must not be left open.) No.8798-7/11 LB11980H Each Input/Output Equivalent Circuit Pin No. Pin name 15 UIN (+) UIN (-) 16 18 VIN (+) VIN (-) 19 WIN (+) 20 WIN (-) 17 Input/Output equivalent circuit Each (+) input Each (-) input 200Ω 100µA 200Ω 28 UOUT VOUT 1 WOUT 22 VS 24 Rf (POWER) 4 Rf (SENSE) VS VCC 150µA 27 Each OUT Lower oversaturation prevention circuit block VCC 30kΩ 10µA 200Ω 200Ω Rf (SENSE) Rf (POWER) VCC VCC 200Ω 100µA 200Ω VCC VCC 1.25V 6kΩ 10kΩ ADJ 200Ω 500Ω 6kΩ 10kΩ 200µA FR VCC 20µA VCC 20kΩ FR ADJ LIM 5kΩ 200Ω 6 200µA max CTL 23 VCC 10kΩ LIM 10kΩ CTL 13 5kΩ 12 Continued on next page. No.8798-8/11 LB11980H Continued from preceding page. Pin No. Pin name 8 FGIN (-) FGIN (+) VCC 5µA 9 Input/output equivalent circuit FGIN (+) FGIN (-) 300Ω VCC VCC VCC 10kΩ FC 2kΩ FGOUT 14 10kΩ 10 FGOUT 300Ω FGS VCC VCC 4.7kΩ VCC 10kΩ 11 FC FGS 300Ω No.8798-9/11 LB11980H 0.5Ω 1 WOUT VOUT 28 2 NC UOUT 27 3 NC NC 26 4 RF NC 25 5 GSENSE RF 24 6 FR 0.1µF 0.1µF 0.1µF Sample Application Circuit ADJ 23 7 GND 15V VS 22 FRAME GND FRAME GND VCC 1µF FGS pulse output 8 FGIN- VCC 21 9 FGIN+ HW- 20 10 FGOUT HW+ 19 11 FGS HV- 18 12 CTL HV+ 17 13 LIM HU- 16 14 FC HU+ 15 Torque instruction voltage supply pin 5V Hall element 2.5V 39kΩ MR 0.1µF Current limiter setting voltage supply pin HSOP28H Top view Note) The constant shown in this example is only for reference and does not guarantee the characteristics. Connect a capacitor between power supply and GND and between Hall inputs as required. No.8798-10/11 LB11980H Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. 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Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2006. Specifications and information herein are subject to change without notice. PS No.8798-11/11