TF250TH Ordering number : ENA0381 SANYO Semiconductors DATA SHEET TF250TH N-channel Silicon Junction FET Electret Condenser Microphone Applications Features • • • • • Ultrasmall package facilitates miniaturization in end products. Especially suited for use in electret condenser microphone for audio equipments and telephones. Excellent voltage characteristics. Excellent transient characteristics. Adoption of FBET process. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Gate-to-Drain Voltage Symbol Conditions Ratings VGDO IG Gate Current Drain Current Unit --20 V 10 mA Junction Temperature ID PD Tj 150 °C Storage Temperature Tstg --55 to +150 °C Allowable Power Dissipation 1 mA 100 mW Electrical Characteristics at Ta=25°C Parameter Gate-to-Drain Breakdown Voltage Cutoff Voltage Zero-Gate Voltage Drain Current Forward Transfer Admittance Symbol V(BR)GDO VGS(off) IDSS yfs Conditions IG=--100µA VDS=2V, ID=1µA VDS=2V, VGS=0V Input Capacitance Ciss VDS=2V, VGS=0V, f=1kHz VDS=2V, VGS=0V, f=1MHz Reverse Transfer Capacitance Crss VDS=2V, VGS=0V, f=1MHz Marking: C Ratings min typ max --20 --0.1 V --0.4 140* 0.7 Unit --1.0 350* 1.3 V µA mS 2.8 pF 0.55 pF Continued on next page. * : The TF250TH is classified by IDSS as follows : (unit : µA) Rank IDSS 4 140 to 240 5 210 to 350 Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 82506GB MS IM TC-00000099 No. A0381-1/4 TF250TH Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max [Ta=25°C, VCC=2V, RL=2.2kΩ, Cin=5pF, See specified Test Circuit.] Voltage Gain GV ∆GVV ∆Gvf Reduced Voltage Characteristic Frequency Characteristic VIN=10mV, f=1kHz 0.8 VIN=10mV, f=1kHz, VCC=2→1.5V dB --0.7 f=1kHz to 110Hz Total Harmonic Distortion THD VIN=30mV, f=1kHz Output Noise Voltage VNO VIN=0V, A curve Package Dimensions --2.0 dB --1.0 dB --100 dB 0.6 % Test Circuit unit : mm (typ) 7031-001 Voltage gain Frequency Characteristic Distortion Reduced Voltage Characteristic Top View 0.2 1.4 0.25 2.2kΩ VCC=2V VCC=1.5V 0.8 1.2 3 5pF 2 1 0.2 0.2 33µF + 0.1 0.45 0.34 VTVM V THD OSC 0.07 0.07 Bottom View 1 : Drain 2 : Source 3 : Gate SANYO : VTFP ID -- VDS 300 ID -- VDS 300 0V V GS= V GS=0V 250 Drain Current, ID -- µA Drain Current, ID -- µA 250 200 150 --0.1V 100 --0.2V 50 --0.3V 200 --0.1V 150 100 --0.2V 50 --0.4V --0.3V --0.4V 0 0 0 0.5 1.0 1.5 Drain-to-Source Voltage, VDS -- V 2.0 IT10917 0 4 5 Drain-to-Source Voltage, VDS -- V 1 2 3 IT10918 No. A0381-2/4 TF250TH 300 300 50 --0.6 --0.5 --0.4 --0.3 --0.2 --0.1 Gate-to-Source Voltage, VGS -- V °C --0.6 --0.5 --0.3 --0.2 --0.1 0 IT10920 VGS(off) -- IDSS --0.7 VDS=2V ID=1µA VDS=2V VGS=0V f=1kHz 1.8 --0.4 Gate-to-Source Voltage, VGS -- V Cutoff Voltage, VGS(off) -- V Forward Transfer Admittance, yfs -- mS 0 --0.7 0 IT10919 yfs -- IDSS 2.0 1.6 1.4 1.2 1.0 0.8 0.6 --0.6 --0.5 --0.4 --0.3 --0.2 --0.1 0 100 200 300 Drain Current, IDSS -- µA 400 500 IT10921 0 Ciss -- VDS 10 100 Reverse Transfer Capacitance, Crss -- pF 7 5 3 2 200 300 Drain Current, IDSS -- µA 400 500 IT10922 Crss -- VDS 1.0 VGS=0V f=1MHz Input Capacitance, Ciss -- pF 100 50 0 --0.7 VGS=0V f=1MHz 7 5 3 2 0.1 1.0 5 7 2 1.0 3 5 7 2 10 Drain-to-Source Voltage, VDS -- V 5 3 Reduced Voltage Characteristic, ∆GVV -- dB GV : VCC=2V VIN=10mV f=1kHz RL=2.2kΩ Cin=5pF IDSS : VDS=2V 1.2 1.0 0.8 0.6 0.4 0.2 0 --0.2 --0.4 --0.6 0 100 200 300 Drain Current, IDSS -- µA 400 500 IT10925 7 1.0 2 3 5 7 2 10 Drain-to-Source Voltage, VDS -- V IT10923 GV -- IDSS 1.4 Voltage Gain, GV -- dB 150 --2 5°C 25 0µ A 15 0µ A 100 200 °C µA 50 S =3 150 250 75 250 VDS=2V Ta = Drain Current, ID -- µA 350 ID S Drain Current, ID -- µA VDS=2V 350 200 ID -- VGS 400 25 ID -- VGS 400 ∆GVV -- IDSS 0 3 IT10924 ∆GVV : VCC=2V→1.5V VIN=10mV f=1kHz IDSS : VDS=2V --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 0 100 200 300 Drain Current, IDSS -- µA 400 500 IT10926 No. A0381-3/4 TF250TH THD -- VIN THD : VCC=2V f=1kHz IDSS : VDS=2V 10 150µA I DSS= 250µA 350µA 1.0 0.1 THD : VCC=2V VIN=30mV f=1kHz IDSS : VDS=2V 1.2 1.0 0.8 0.6 0.4 0.2 0 0 50 100 150 Input Voltage, VIN -- mV 200 IT10927 PD -- Ta 120 Allowable Power Dissipation, PD -- mW THD -- IDSS 1.4 Total Harmonic Distortion, THD -- % Total Harmonic Distortion, THD -- % 100 0 100 200 300 Drain Current, IDSS -- µA 400 500 IT10928 100 80 60 40 20 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT10929 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2006. Specifications and information herein are subject to change without notice. PS No. A0381-4/4