SANYO TF218THC

TF218THC
Ordering number : ENA0890
SANYO Semiconductors
DATA SHEET
N-channel Silicon Junction FET
TF218THC
Electret Condenser Microphone
Applications
Features
•
•
•
•
•
•
Ultrasmall package facilitates miniaturization in end products.
Especially suited for use in electret condenser microphone for audio equipments and telephones.
Excellent voltage characteristics.
Excellent transient characteristics.
Adoption of FBET process.
Halogen free compliance.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Gate-to-Drain Voltage
Symbol
Conditions
Ratings
VGDO
IG
Gate Current
Drain Current
Unit
--20
V
10
mA
Junction Temperature
ID
PD
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Allowable Power Dissipation
1
mA
100
mW
Marking: A
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82907GB TI IM TC-00000868 No. A0890-1/5
TF218THC
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Gate-to-Drain Breakdown Voltage
Ratings
Conditions
V(BR)GDO
min
typ
Cutoff Voltage
VGS(off)
IG=--100µA
VDS=5V, ID=1µA
--0.2
Drain Current
IDSS
VDS=5V, VGS=0V
140*
Forward Transfer Admittance
Input Capacitance
yfs
Ciss
VDS=5V, VGS=0V, f=1kHz
VDS=5V, VGS=0V, f=1MHz
Reverse Transfer Capacitance
Crss
VDS=5V, VGS=0V, f=1MHz
Unit
max
--20
V
--0.6
0.5
--1.0
V
350*
µA
1.0
mS
3.5
pF
0.65
pF
[Ta=25°C, VCC=4.5V, RL=1kΩ, Cin=15pF, See specified Test Circuit.]
Voltage Gain
GV
∆GVV
∆Gvf
Reduced Voltage Characteristic
Frequency Characteristic
Input Impedance
VIN=10mV, f=1kHz
--3.0
VIN=10mV, f=1kHz, VCC=4.5→1.5V
--1.2
dB
--3.5
f=1kHz to 110Hz
f=1kHz
Output Impedance
ZIN
ZO
Total Harmonic Distortion
THD
VIN=30mV, f=1kHz
Output Noise Voltage
VNO
VIN=0V, A curve
--1.0
25
dB
dB
MΩ
f=1kHz
1000
Ω
1.2
%
--110
dB
* : The TF218THC is classified by IDSS as follows : (unit : µA)
Rank
4
5
IDSS
140 to 240
210 to 350
Package Dimensions
Test Circuit
unit : mm (typ)
7031-001
Voltage gain
Frequency Characteristic
Distortion
Reduced Voltage Characteristic
Top View
0.2
1.4
1kΩ
0.25
VCC=4.5V
VCC=1.5V
0.8
1.2
3
33µF
+
15pF
2
1
0.1
0.2
0.2
0.45
VTVM V
THD
B A
0.34
OSC
Output Impedance
0.07
Bottom View
0.07
1 : Drain
2 : Source
3 : Gate
SANYO : VTFP
ID -- VDS
450
450
400
400
350
300
VGS=0V
250
200
--0.1V
150
--0.2V
100
--0.3V
--0.4V
50
0
0
1
2
3
4
5
6
ID -- VDS
500
Drain Current, ID -- µA
Drain Current, ID -- µA
500
7
--0.5V
350
300
VGS=0V
250
200
--0.1V
150
100
--0.2V
50
--0.3V
--0.4V
0
8
Drain-to-Source Voltage, VDS -- V
9
10
IT02310
0
1
2
3
--0.5V
4
Drain-to-Source Voltage, VDS -- V
5
IT03015
No. A0890-2/5
TF218THC
360
400
320
µA
50
3
=
SS
A
ID
0µ
25
A
0µ
15
200
150
100
--0.6
--0.5
--0.4
--0.3
--0.2
--0.1
Gate-to-Source Voltage, VGS -- V
120
0
--1.0
0
--0.8
--0.7
--0.6
--0.5
--0.4
--0.3
--0.2
Gate-to-Source Voltage, VGS -- V
Cutoff Voltage, VGS(off) -- V
1.0
0.9
0.8
0.7
0.6
--0
IT02313
VDS=5V
ID=1µA
-0.65
1.1
--0.1
VGS(off) -- IDSS
-0.70
VDS=5V
VGS=0V
f=1kHz
1.2
--0.9
IT02312
yfs -- IDSS
1.3
Forward Transfer Admittance, yfs -- mS
160
40
0
--0.7
-0.60
-0.55
-0.50
-0.45
-0.40
-0.35
0.5
-0.30
0
100
200
300
400
Drain Current, IDSS -- µA
500
IT02314
0
200
Allowable Power Dissipation, PD -- mW
250µA
150µA
I DSS=
350µA
1.0
300
400
0.1
500
IT02315
PD -- Ta
120
THD : VCC=4.5V
f=1kHz
IDSS : VDS=5.0V
10
100
Drain Current, IDSS -- µA
THD -- VIN
100
Total Harmonic Distortion, THD -- %
200
80
50
100
80
60
40
20
0
0
50
100
150
Input Voltage, VIN -- mV
200
0
20
40
7
5
3
2
Reverse Transfer Capacitance, Crss -- pF
10
80
100
120
140
160
IT02317
Crss -- VDS
5
VGS=0V
f=1MHz
60
Ambient Temperature, Ta -- °C
IT02316
Ciss -- VDS
2
Input Capacitance, Ciss -- pF
280
240
25
°C
350
300
VDS=5V
Ta
=7
5°
C
Drain Current, ID -- µA
Drain Current, ID -- µA
450
250
ID -- VGS
400
VDS=5V
--2
5°
C
ID -- VGS
500
VGS=0V
f=1MHz
3
2
1.0
7
5
3
2
0.1
1.0
7
1.0
2
3
5
7
10
Drain-to-Source Voltage, VDS -- V
2
3
IT03814
7
1.0
2
3
5
7
2
10
Drain-to-Source Voltage, VDS -- V
3
IT03815
No. A0890-3/5
TF218THC
GV : VCC=4.5V
VIN=10mV
RL=1.0kΩ
f=1kHz
IDSS : VDS=5.0V
--1
--2
--3
--4
--5
--6
--7
0
100
200
300
400
Drain Current, IDSS -- µA
Total Harmonic Distortion, THD -- %
THD : VCC=4.5V
VIN=30mV
f=1MHz
IDSS : VDS=5.0V
2.0
1.5
1.0
0.5
--0.7
--0.9
--1.1
--1.3
--1.5
--1.7
100
200
300
400
Drain Current, IDSS -- µA
500
IT02321
ZIN -- IDSS
32
0
ZIN :VCC=4.5V
VIN=10mV
f=1kHz
IDSS : VDS=5.0V
31
30
29
28
27
26
0
100
200
300
400
Drain Current, IDSS -- µA
500
IT02322
0
930
920
910
300
400
500
IT02323
VNO : VCC=4.5V
VIN=0V, ACurve
RL=1.0kΩ
IDSS : VDS=5.0V
--112
Output Noise Voltage, VNO -- dB
940
200
VNO -- IDSS
--111
ZO : VCC=4.5V
VIN=10mV
f=1kHz
IDSS : VDS=5.0V
950
100
Drain Current, IDSS -- µA
ZO -- IDSS
960
Output Impedance, ZO -- Ω
∆GVV : VCC=4.5V→1.5V
VIN=10mV
f=1kHz
IDSS : VDS=5.0V
0
THD -- IDSS
2.5
∆GVV -- IDSS
--0.5
500
IT02320
Input Impedance, ZIN -- MΩ
Voltage Gain, GV -- dB
Reduced Voltage Characteristic, ∆GVV -- dB
GV -- IDSS
0
--113
--114
--115
--116
--117
--118
--119
--120
900
0
100
200
300
Drain Current, IDSS -- µA
400
500
IT02324
0
100
200
300
Drain Current, IDSS -- µA
400
500
IT02325
No. A0890-4/5
TF218THC
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
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semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
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limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
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This catalog provides information as of August, 2007. Specifications and information herein are subject
to change without notice.
PS No. A0890-5/5