TSC BC858C

Pb
BC856A,B
BC857A,B,C
BC858A,B,C
RoHS
COMPLIANCE
0.2 Watts PNP Plastic-Encapsulate Transistors
SOT-23
Features
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Ideally suited for automatic insertion
Epitaxial planar die construction
For switching, AF driver and amplifier
applications
Complementary PNP type available(BC846)
Qualified to AEC-Q101 standards for high
reliability
Mechanical Data
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Case: SOT-23, Molded plastic
Case material: molded plastic. UL flammability
classification rating 94V-0
Moisture sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIIL-STD-202,
Method 208
Lead free plating
Marking & Polarity: See diagram
Weight: 0.008 gram (approx.)
Maximum Ratings
Type Number
Dimensions in inches and (millimeters)
o
TA=25 C unless otherwise specified
Collector-base breakdown voltage
IC=10uA, IE=0
Collector-emitter breakdown voltage IC=10mA, IB=0
Collector current
o
Power dissipation (Tamb=25 C) (Note 1)
Emitter-base breakdown voltage
Collector cut-off current
IE=10uA, IC=0
VCB=-70V IE=0
VCB=-45V IE=0
VCB=-25V IE=0
Collector cut-off current
VCE=-60V IB=0
VCE=-40V IB=0
VCE=-25V IB=0
Emitter cut-off current
VEB=-5V IC=0
Collector-emitter saturation voltage IC=-100mA, IB=-5mA
Base-emitter saturation voltage IC=-100mA, IB=-5mA
Transition frequency VCE=-5V IC=-10mA f=100MHz
Operating and Storage Temperature Range
Type Number
DC current gain BC846A,847A,848A
BC846B,847B,848B VCE=-5V IC=-2mA
BC847C / BC848C
Symbol BC856
VCBO
VCEO
ICM
PCM
VEBO
-80
-65
BC857
BC858
Units
-50
-45
-0.1
0.2
-5
-30
-30
V
V
A
W
V
-0.1
ICBO
uA
-0.1
-0.1
-0.1
ICEO
uA
-0.1
-0.1
IEBO
VCE(sat)
VBE(sat)
fT
TJ, TSTG
Symbol
HFE(1)
-0.1
-0.5
-1.1
100
-55 to + 150
Min
Max
125
220
420
250
475
800
DEVICE MARKING
BC856A=3A, BC856B=3B, BC857A=3E, BC857B=3F, BC857C=3G,BC858A=3J, BC858B=3K, BC858C=3L
Note 1: Transistor mounted on an FR4 Printed-circuit board.
Version: B07
uA
V
V
MHz
o
C
Units
RATINGS AND CHARACTERISTIC CURVES (BC856A,B/ BC857A,B,C/ BC858A,B,C)
500
FIG.1- DC CURRENT GAIN AS A FUNCTION OF
COLLECTOR CURRENT; TYPICAL VALUES.
-1200
FIG.2- BASE-EMITTER VOLTAGE AS A FUNCTION OF
COLLECTOR CURRENT; TYPICAL VALUES.
VCE= -5V
VCE= -5V
400
-1000
Ta
mb =
T amb=
150 O
C
-800
VBE (mV)
hFE
300
Tam = 25 O
b
C
200
O
-55 C
O
25
T amb=
-600
C
O
0 C
= 15
T amb
-400
Tamb= -55 OC
100
-200
0
-0.01
-10000
-0.1
-1
IC (mA)
-10
-100
-1000
FIG.3- COLLECTOR-EMITTER SATURATION VOLTAGE
AS A FUNCTION OF COLLECTOR CURRENT;
TYPICAL VALUES.
0-0.01
-1200
-1000
-0.1
-1
-100
FIG.4- BASE-EMITTER SATURATION VOLTAGE AS A
FUNCTION OF COLLECTOR CURRENT;
TYPICAL VALUES.
-1000
T amb=
-1000
-800
VBEsat (mV)
O
Tamb= 150 C
VCEsat (mV)
-10
IC / IB =20
IC / IB =20
O
C
= 25
T amb
-100
O
-55 C
O
25
T amb=
C
O
0 C
= 15
T amb
-600
-400
O
5 C
= -5
T amb
-10
-0.1
1000
IC (mA)
-10
IC (mA)
-1
-200
-100
0
-0.1
-1000
FIG.5- DC CURRENT GAIN AS A FUNCTION OF
COLLECTOR CURRENT; TYPICAL VALUES.
-1200
-100
-1000
FIG.6- BASE-EMITTER VOLTAGE AS A FUNCTION OF
COLLECTOR CURRENT; TYPICAL VALUES.
VCE= -5V
VCE= -5V
-1000
800
O
-55 C
T amb=
-800
Ta
hFE
mb =
400
150 O
C
VBE (mV)
600
Tamb= 25 C
T amb=
-600
O
25 C
O
0 C
= 15
T amb
O
-400
Tamb= -55 C
O
200
0
-0.01
-10
IC (mA)
-1
-0.1
-1
IC (mA)
-200
-10
-100
-1000
0
-0.01
-0.1
-1
IC (mA)
-10
-100
Version: B07
-1000
RATINGS AND CHARACTERISTIC CURVES (BC856 A,B/ BC857A,B,C/ BC858A,B,C)
-10000
FIG.7- COLLECTOR-EMITTER SATURATION VOLTAGE
AS A FUNCTION OF COLLECTOR CURRENT;
TYPICAL VALUES.
-1200
FIG.8- BASE-EMITTER SATURATION VOLTAGE AS A
FUNCTION OF COLLECTOR CURRENT;
TYPICAL VALUES.
IC / IB =20
IC / IB =20
-1000
O
-55 C
T amb=
-1000
-800
O
= 25
b
T am
VBEsat (mV)
VCEsat (mV)
O
Tamb= 150 C
C
-100
-600
O
25 C
O
0 C
= 15
T amb
-400
-200
O
5 C
= -5
T amb
-10
-0.1
1000
T amb=
-10
IC (mA)
-1
-100
FIG.9- DC CURRENT GAIN AS A FUNCTION OF
COLLECTOR CURRENT; TYPICAL VALUES.
Ta
mb =
800
VCE= -5V
150 O
C
0
-0.1
-1000
-1200
-10
IC (mA)
-1
VCE= -5V
-1000
-800
VBE (mV)
hFE
Tam = 25 O
b
C
O
O
0 C
= 15
T amb
-200
0
-0.01
-10000
C
-600
-400
200
O
-55 C
25
T amb=
400
Tamb= -55 OC
-1000
FIG.10- BASE-EMITTER VOLTAGE AS A FUNCTION OF
COLLECTOR CURRENT; TYPICAL VALUES.
T amb=
600
-100
-0.1
-1
IC (mA)
-10
-100
0
-0.01
-1000
FIG.11- COLLECTOR-EMITTER SATURATION VOLTAGE
AS A FUNCTION OF COLLECTOR CURRENT;
TYPICAL VALUES.
-1200
-0.1
-1
IC (mA)
-10
-100
-1000
FIG.12- BASE-EMITTER SATURATION VOLTAGE AS A
FUNCTION OF COLLECTOR CURRENT;
TYPICAL VALUES.
IC / IB =20
IC / IB =20
-1000
O
-55 C
T amb=
-1000
VBEsat (mV)
VCEsat (mV)
-800
O
Tamb= 150 C
C
= 25
O
-100
T amb
-1
C
O
0 C
= 15
T amb
-400
O
5 C
= -5
T amb
-10
-0.1
-600
O
25
T amb=
-10
IC (mA)
-100
-200
-1000
0
-0.1
-1
-10
IC (mA)
-100
Version: B07
-1000