TSC TSC5302D_07

TSC5302D
High Voltage NPN Transistor with Diode
TO-251
(IPAK)
TO-252
(DPAK)
PRODUCT SUMMARY
Pin Definition:
1. Gate
2. Drain
3. Source
BVCEO
400V
BVCBO
700V
IC
VCE(SAT)
Features
●
2A
1.1V @ IC / IB = 1A / 0.25A
Block Diagram
Build-in Free-wheeling Diode Makes Efficient Anti-saturation
Operation
●
No Need to Interest an hfe Value Because of Low Variable
Storage-time Spread Even Though Comer Spirit Product.
●
Low Base Drive Requirement
●
Suitable for Half Bridge Light Ballast Application
Structure
●
Silicon Triple Diffused Type
●
NPN Silicon Transistor with Diode
Ordering Information
Part No.
TSC5302DCP RO
TSC5302DCH C5
Package
Packing
TO-252
TO-251
2.5Kpcs / 13” Reel
70pcs / Tube
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
VCBO
700V
V
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
VEBO
400V
10
V
V
Collector Current
IC
2
A
Collector Peak Current (tp <5ms)
ICM
4
A
Base Current
IB
1
A
Base Peak Current (tp <5ms)
IBM
2
A
o
Total Dissipation @ Tc ≤ 25 C
TO-251
TO-252
Maximum Operating Junction Temperature
Ptot
TJ
Storage Temperature Range
TSTG
1/6
25
1.5
W
+150
o
-65 to +150
o
C
C
Version: A07
TSC5302D
High Voltage NPN Transistor with Diode
Thermal Performance
Parameter
Symbol
Junction to Case Thermal Resistance
Limit
RӨJC
Junction to Ambient Thermal Resistance
RӨJA
Unit
6.25
o
100
o
C/W
C/W
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Static
Collector-Base Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Turn On Time
Storage Time
Fall Time
a
a
a
Symbol
Min
Typ
Max
Unit
IC = 1mA, IB = 0
BVCBO
700
--
--
V
IC = 10mA, IE = 0
IE = 1mA, IC = 0
BVCEO
BVEBO
400
10
---
---
V
V
VCB = 700V, IE = 0
VEB = 9V, IC = 0
ICBO
IEBO
---
---
1
1
uA
uA
IC =0.5A, IB =0.1A
IC =1A, IB =0.25A
VCE(SAT)1
VCE(SAT)2
---
---
0.5
1.1
V
IC =0.5A, IB =0.1A
IC =1A, IB =0.25A
VCE =5V, IC =10mA
VBE(SAT)1
VBE(SAT)2
---
---
1.1
1.2
V
hFE 1
10
--
--
VCE =5V, IC =400mA
hFE 2
10
--
30
VCE =5V, IC =1A
hFE 3
5
--
--
tON
--
0.15
0.3
uS
tSTG
--
0.5
0.9
uS
tf
--
0.2
0.4
uS
VCC =250V, IC =1A,
IB1=IB2 =0.2A, tp =25uS
Duty Cycle<1%
Diode
Fall Time
IC =1A
tF
--
--
800
uS
Forward Voltage Drop
IC =1A
Vf
--
--
1.4
V
Notes:
a. Pulsed duration = 300uS, duty cycle ≤2%
2/6
Version: A07
TSC5302D
High Voltage NPN Transistor with Diode
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Figure 1. Static Characteristics
Figure 2. DC Current Gain
Figure 3. Vce(sat) v.s. Vbe(sat)
Figure 4. Power Derating
3/6
Version: A07
TSC5302D
High Voltage NPN Transistor with Diode
SOT-252 Mechanical Drawing
DIM
A
A1
B
C
D
E
F
G
G1
G2
H
I
J
K
L
M
TO-252 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
2.3BSC
0.09BSC
4.6BSC
0.18BSC
6.80
7.20
0.268
0.283
5.40
5.60
0.213
0.220
6.40
6.65
0.252
0.262
2.20
2.40
0.087
0.094
0.00
0.20
0.000
0.008
5.20
5.40
0.205
0.213
0.75
0.85
0.030
0.033
0.55
0.65
0.022
0.026
0.35
0.65
0.014
0.026
0.90
1.50
0.035
0.059
2.20
2.80
0.087
0.110
0.50
1.10
0.020
0.043
0.90
1.50
0.035
0.059
1.30
1.70
0.051
0.67
Marking Diagram
Y = Year Code
M = Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
L = Lot Code
4/6
Version: A07
TSC5302D
High Voltage NPN Transistor with Diode
SOT-251 Mechanical Drawing
DIM
A
A1
b
C
D
D1
E
E1
e
F
L
L1
TO-251 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
2.20
2.40
0.087
0.094
1.10
1.30
0.043
0.051
0.55
0.75
0.022
0.030
0.48
0.58
0.019
0.023
6.50
7.00
0.256
0.276
5.50
5.70
0.217
0.224
6.40
6.60
0.252
0.260
5.20
5.40
0.205
0.213
2.25
2.35
0.089
0.093
0.48
0.58
0.019
0.023
7.80
8.20
0.307
0.323
1.00
1.30
0.039
0.051
Marking Diagram
Y = Year Code
M = Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
L = Lot Code
5/6
Version: A07
TSC5302D
High Voltage NPN Transistor with Diode
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to any
intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for
such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale
and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability,
or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers
using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for
any damages resulting from such improper use or sale.
6/6
Version: A07