TSC742

TSC742
High Voltage NPN Transistor
TO-220
PRODUCT SUMMARY
Pin Definition:
1. Base
2. Collector
3. Emitter
BVCEO
420V
BVCBO
1050V
IC
VCE(SAT)
Features
5A
0.5V @ IC=1A, IB=0.2A
Block Diagram
●
High Voltage Capability
●
High Switching Speed
Structure
●
Silicon Triple Diffused Type
●
NPN Silicon Transistor
Ordering Information
Part No.
TSC742CZ C0
Package
Packing
TO-220
50pcs / Tube
Absolute Maximum Rating (TA = 25oC, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
VCBO
1050
V
Collector-Emitter Voltage @ VBE=0V
VCES
420
V
Emitter-Base Voltage
VEBO
15
V
Collector Current
IC
5
A
Collector Peak Current (tp <5ms)
ICM
8
A
Base Current
IB
2
A
Base Peak Current (tp <5ms)
IBM
4
A
PDTOT
70
Power Total Dissipation @ Tc=25ºC
Maximum Operating Junction Temperature
+150
TSTG
-55 to +150
o
Symbol
Limit
TJ
Storage Temperature Range
W
o
C
C
Note: Single Pulse. PW = 300µs, Duty ≤2%
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
RӨJC
Thermal Resistance - Junction to Ambient
RӨJA
1/4
Unit
1.8
o
62.5
o
C/W
C/W
Version: A14
TSC742
High Voltage NPN Transistor
Electrical Specifications (TA = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Collector-Base Voltage
IC =0.5mA
BVCBO
1050
--
--
V
Collector-Emitter Breakdown Voltage
IC =5mA
BVCEO
420
--
--
V
Emitter-Base Breakdown Voltage
IE =1mA
BVEBO
15
--
--
V
Collector Cutoff Current
VCE =400V, IB=0
ICEO
--
10
250
µA
Collector Cutoff Current
VCB =950V, IE =0
ICBO
--
--
10
µA
Collector-Emitter Saturation Voltage
IC=1A, IB =0.2A
VCE(SAT)1
---
0.15
0.5
V
Collector-Emitter Saturation Voltage
IC=3.5A, IB =1A
VCE(SAT)2
---
1.2
1.5
V
Base-Emitter Saturation Voltage
IC=3.5A, IB =1A
VBE(SAT)1
--
1.0
1.5
V
48
70
100
23
28
50
tr
--
--
1
µs
tSTG
4.5
5
5.5
µs
tf
--
--
1.2
µs
DC Current Gain
VCE =5V, IC = 0.1A
VCE =3V, IC = 0.8A
hFE
Resistive Load Switching Time (Ratings)
Rise Time
Storage Time
VCC =5V, IC =0.5A,
tP =300µs,
Fall Time
Note: Pulsed duration ≤380µs, duty cycle ≤2%
2/4
Version: A14
TSC742
High Voltage NPN Transistor
TO-220 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y
M
L
= Year Code
= Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep,
J=Oct, K=Nov, L=Dec)
= Lot Code
3/4
Version: A14
TSC742
High Voltage NPN Transistor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
4/4
Version: A14