UNISONIC TECHNOLOGIES CO., LTD UK2996 MOSFET 600V SILICON N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The UK2996 is an N-channel enhancement mode field-effect power transistor. Intended for use in high voltage, high speed switching applications in power supplies, DC-DC converter, relay drive and PWM motor drive controls. FEATURES 1 * Fast switching times * Improved inductive ruggedness * High forward transfer admittance * Low on resistance * Low leakage current * Lower input capacitance TO-220F *Pb-free plating product number: UK2996L SYMBOL 2. Drain 1. Gate 3. Source ORDERING INFORMATION Order Number Normal Lead Free Plating UK2996-TA3-T UK2996L-TA3-T UK2996-TF3-T UK2996L-TF3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F Pin Assignment 1 2 3 G D S G D S Packing Tube Tube UK2996L-TA3-T (1)Packing Type (1) T: Tube (2)Package Type (2) TA3: TO-220, TF3: TO-220F (3)Lead Plating (3) L: Lead Free Plating, Blank: Pb/Sn 16www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-063 ,A UK2996 MOSFET ABSOLUTE MAXIMUM RATING PARAMETER Drain to Source Voltage Continuous Drain Current Pulsed Drain Current SYMBOL VDSS ID IDM RATINGS 600 10 30 VDGR VGSS IAR EAS EAR PD TJ 600 ±30 10 252 4.5 45 -55 ~ +150 Drain to Gate Voltage (RGS = 20 kΩ) Gate to Source Voltage Avalanche Current Single Pulsed Avalanche energy (Note 2) Repetitive Avalanche Energy (Note 3) Total Power Dissipation (Tc = 25℃) Operating Temperature Range UNIT V A A V V A mJ mJ W ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. L = 4.41 mH, IAR = 10 A, VDD = 90 V, RG = 25 Ω, starting TJ = 25°C. 3. Pulse width and frequency is limited by TJ. THERMAL DATA CHARACTERISTICS Thermal Resistance, Channel to Ambient Thermal Resistance, Channel to Case SYMBOL θJA θJC RATINGS 62.5 2.78 UNIT ℃/ W ℃/ W ELECTRICAL CHARACTERISTICS (Ta = 25°C) PARAMETER SYMBOL TEST CONDITIONS Gate−Source Breakdown Voltage BVGSS VDS = 0V, IG = ±10µA Drain−Source Breakdown Voltage BVDSS VGS = 0V, ID = 10mA Gate Threshold Voltage VGS(TH) VDS = 10V, ID = 1mA Gate Source Leakage Current IGSS VGS = ±25V, VDS = 0V Drain Source Leakage Current IDSS VDS = 600V, VGS = 0V Static Drain−Source ON Resistance RDS (ON) VGS = 10V, ID = 5A Forward Transconductance gFS VDS = 10V, ID = 5A Input Capacitance MIN TYP MAX UNIT ±30 V 600 V 2.0 4.0 V ±10 µA 100 µA 0.74 1. 0 Ω 3.4 6.8 S CISS 1500 VDS = 20V, VGS = 0V, f = 1MHz Reverse Transfer Capacitance CRSS Output Capacitance COSS 140 QG 38 Total Gate Charge 13 ID = 10A, VDD ≈ 400V, VGS = 10V Gate−Source Charge QGS Gate−Drain Charge QGD 17 tON tR tOFF 55 15 145 Turn-on Delay Time Turn-on Rise Time Turn−off Delay Time RL =60Ω 21 I D=5A pF nC VOUT Switching Time 10V VGS Turn-off Fall Time tF 0V ns 50Ω 27 VDD ≈ 300V tP=10μs, Duty ≤1% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-063 ,A UK2996 MOSFET SOURCE−DRAIN DIODE CHARACTERISTICS (Ta = 25°C) PARAMETER SYMBOL TEST CONDITIONS Diode Forward Voltage VSD VGS = 0V, IS = 10A Continuous Source Current (body diode) IS Integral Reverse p-n Junction MIN TYP MAX UNIT -1.7 V 10 A Diode in the MOSFET Drain Pulse Source Current (body diode) ISM 30 A Gate Source Reverse Recovery Time Reverse Recovery Charge tRR QRR VGS = 0V, IS = 10A, dIF/dt = 100 A/µs UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 1600 17 ns µC 3 of 6 QW-R502-063 ,A UK2996 MOSFET TEST CIRCUIT AND WAVE FORM LL VDS BVDSS I AR ID RG DUT +15V -15V ID (t) VDD VDS (t) VDD tP UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw tP Time 4 of 6 QW-R502-063 ,A UK2996 MOSFET TYPICAL CHARACTERISTICS Drain Current, ID (A) 10 5.5V COMMON SOURCE TC=25℃ 8 PULSE TEST 5.25V 5V 6 4.75V 4 4.5V 2 0 VGS=4V 0 4 8 12 16 20 Drain-Source on Resistance, RDS (ON) (Ω) Drain Current vs. Drain-Source Voltage 2.2 2 1.8 1.6 12 1.2 1.0 Drain Current, ID (A) 10 8 6 100℃ 4 25℃ T C=-55℃ 2 0 0 0.4 0.2 0 0.3 0.5 16 1 3 5 10 Drain Current, ID (A) 30 Drain-Source Voltage vs. Gate-Source Voltage COMMON SOURCE TC=25℃ PULSE TEST 12 I D=10A 8 I D=5A 4 ID=2.5A 0 0 4 8 12 16 Gate-Source Voltage, VGS (V) 20 Continuous Source Current vs. DrainSource Voltage 30 Continuous Source Current, I S (A) 12 2 4 6 8 10 Gate-Source Voltage, VGS (V) VGS=10V 0.8 0.6 16 Drain-Source Voltage, VDS (V) COMMON SOURCE VDS =10V PULSE TEST COMMON SOURCE TC=25℃ PULSE TEST 1.4 Drain-Source Voltage, VDS (V) Drain Current vs. Gate-Source Voltage Drain-Source on Resistance vs. Drain Current COMMON SOURCE TC=25℃ PULSE TEST 10 5 3 10 1 0.5 0.3 0.1 3 0 1 VGS =0V -0.4 -0.8 Drain-Source Voltage, VDS (V) -1.2 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-063 ,A UK2996 MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-063 ,A