UNISONIC TECHNOLOGIES CO., LTD UT50N03 Power MOSFET 45A, 25V N-CHANNEL POWER MOSFET 1 FEATURES TO-252 * RDS(ON) = 14mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified 1 SYMBOL TO-251 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT50N03L-TM3-T UT50N03G-TM3-T UT50N03L-TN3-R UT50N03G-TN3-R UT50N03L-TN3-T UT50N03G-TN3-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-251 TO-252 TO-252 Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tape Reel Tube 1 of 6 QW-R502-168.B UT50N03 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TJ = 25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 25 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID 45 A Pulsed Drain Current (Note 3) IDM 180 A Single Pulsed Avalanche Energy (Note 4) EAS 20 mJ Power Dissipation PD 50 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. L = 19.5mH, IAS = 6.3A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. Surface-mounted on FR4 board using 1 sq in pad, 1 oz Cu. THERMAL DATA PARAMETER Junction to Ambient (Note 3) Junction to Case UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 71.4 3.0 UNIT ℃/W ℃/W 2 of 6 QW-R502-168.B UT50N03 Power MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Gate-Threshold Voltage SYMBOL Drain-Source On-State Resistance RDS(ON) TEST CONDITIONS BVDSS IDSS IGSS VGS =0V, ID =250 µA VDS=20V, VGS =0V VDS =0V, VGS = ±20V 25 VGS(TH) VDS =VGS, ID =250 µA ID = 30 A VGS = 11.5V ID = 15 A VGS = 10 V ID = 30 A ID = 30 A VGS = 4.5V ID = 15 A 1.0 DYNAMIC PARAMETERS Input Capacitance CISS VDS=12V, VGS =0V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) VGS = 4.5 V, VDS =15 V, Turn-ON Rise Time tR ID = 30 A, RG = 3.0Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VGS = 11.5 V, VDS =15 V, ID = 30 A, RG = 3.0Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF Total Gate Charge QG VDS =15V,VGS =4.5V, Gate-to-Source Charge QGS ID =30 A Gate-to-Drain Charge QGD Total Gate Charge QG VDS =15V,VGS =11.5V, Gate-to-Source Charge QGS ID =30 A Gate-to-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=30 A, VGS =0V Maximum Continuous Drain-Source Diode IS Forward Current Reverse Recovery Time trr IS = 30 A, VGS = 0 V, dI /dt = 100 A/μs Reverse Recovery Charge QRR Note: 1. Pulse width limited by TJ(MAX) 2. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 1.5 ±100 V µA nA 1.7 12 11.7 12.5 21 19 2.0 V 14 mΩ 610 300 125 750 8.2 9.6 11.2 6.8 5.0 84 15 4.0 6.0 1.9 3.7 15 1.9 3.9 0.85 24 14 23 pF ns ns 10 nC nC 1.1 V 45 A ns nC 3 of 6 QW-R502-168.B UT50N03 Power MOSFET TYPICAL CHARACTERISTICS Drain Current,ID (A) On-Resistance versus Gate-toSource Voltage 0.065 ID=15A TJ=25℃ 0.055 0.045 0.035 0.025 0.015 0.005 3 4 5 6 7 8 9 10 Gate-to-Source Voltage,VGS (V) On-Resistance versus Drain Current and Gate Voltage TJ=25℃ 0.025 VGS=4.5V 0.020 0.015 VGS=10V 0.010 0.005 0 10 20 30 40 50 Drain Current,ID (A) Capacitance,C (pF) Leakage,IDSS (nA) 2 0.030 Drain-to-Source Resistance,RDS(ON) (Ω) Drain-to-Source Resistance,RDS(ON) (Ω) Drain Current,ID (A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-168.B Gate-to-Source Voltage,VGS (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Drain Current,ID (A) Source Current,IS(A) t,TIME (ns) Drain-to-Source Voltage,VDS (V) Effective Transient Thermal Resistance (Normalized),r (t) UT50N03 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) QW-R502-168.B 5 of 6 UT50N03 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-168.B