NTST30120CT, NTSJ30120CTG, NTSB30120CT-1G, NTSB30120CTG, NTSB30120CTT4G http://onsemi.com Very Low Forward Voltage Trench-based Schottky Rectifier VERY LOW FORWARD VOLTAGE, LOW LEAKAGE SCHOTTKY BARRIER RECTIFIERS 30 AMPERES, 120 VOLTS Exceptionally Low VF = 0.50 V at IF = 5 A Features • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • PIN CONNECTIONS Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability Low Power Loss and Lower Operating Temperature Higher Efficiency for Achieving Regulatory Compliance Low Thermal Resistance High Surge Capability Pb−Free and Halide−Free Packages are Available 1 2, 4 3 4 4 Typical Applications • Switching Power Supplies including Notebook / Netbook Adapters, • • • • ATX and Flat Panel Display High Frequency and DC−DC Converters Freewheeling and OR−ing diodes Reverse Battery Protection Instrumentation 1 2 3 TO−220AB CASE 221A STYLE 6 12 3 I2PAK CASE 418D STYLE 3 4 Mechanical Characteristics • Case: Epoxy, Molded • Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in • Finish: All External Surfaces Corrosion Resistant and Terminal • Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Maximum for 10 sec 1 2 TO−220FP CASE 221AH D2PAK CASE 418B 3 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2013 January, 2013 − Rev. 4 1 Publication Order Number: NTST30120CT/D NTST30120CT, NTSJ30120CTG, NTSB30120CT−1G, NTSB30120CTG, NTSB30120CTT4G MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR, TC = 125°C) Per device Per diode Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 130°C) Per device Per diode Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Symbol Value Unit VRRM VRWM VR 120 V IF(AV) A 30 15 IFRM A 60 30 IFSM 150 A TJ −40 to +150 °C Storage Temperature Tstg −40 to +150 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms Operating Junction Temperature Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Rating Symbol NTST30120CTG NTSB30120CT−1G NTSB30120CTG NTSJ30120CTG Unit Maximum Thermal Resistance per Diode Junction−to−Case Junction−to−Ambient RqJC RqJA 2.5 70 1.14 46.6 4.05 105 °C/W °C/W ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted) Rating Symbol Maximum Instantaneous Forward Voltage (Note 1) (IF = 5 A, TJ = 25°C) (IF = 7.5 A, TJ = 25°C) (IF = 15 A, TJ = 25°C) vF (IF = 5 A, TJ = 125°C) (IF = 7.5 A, TJ = 125°C) (IF = 15 A, TJ = 125°C) Maximum Instantaneous Reverse Current (Note 1) (VR = 90 V, TJ = 25°C) (VR = 90 V, TJ = 125°C) IR (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0% http://onsemi.com 2 Typ Max Unit 0.56 0.71 0.90 − − 1.08 0.50 0.60 0.68 − − 0.76 16 11 − − mA mA − 25 800 100 mA mA V NTST30120CT, NTSJ30120CTG, NTSB30120CT−1G, NTSB30120CTG, NTSB30120CTT4G 100 TA = 150°C I R , INSTANTANEOUS REVERSE CURRENT (mA) i F , INSTANTANEOUS FORWARD CURRENT (A) TYPICAL CHARACTERISITICS TA = 25°C TA = 125°C 10 1.0 0.1 0 1.4 1.6 0.2 0.4 0.6 0.8 1.0 1.2 vF, INSTANTANEOUS FORWARD VOLTAGE (V) 100 TA = 150°C 10 TA = 125°C 1.0 0.1 0.01 TA = 25°C 0.001 1.8 20 40 60 80 30 50 70 90 100 110 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 2. Typical Reverse Current Characteristics IF(AV), AVERAGE FORWARD CURRENT (A) Figure 1. Typical Instantaneous Forward Characteristics CJ, JUNCTION CAPACITANCE (pF) 10000 TJ = 25°C 1000 100 10 0.1 1 10 VR, REVERSE VOLTAGE (V) 100 30 RqJC = 1.3°C/W dc 25 20 15 SQUARE WAVE 10 5 0 0 20 30 60 RqJC = 1.3°C/W dc 45 40 35 SQUARE WAVE 30 25 20 15 10 5 0 40 60 80 100 120 TC, CASE TEMPERATURE (°C) 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (°C) 140 Figure 4. Current Derating per Leg PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) IF(AV), AVERAGE FORWARD CURRENT (A) Figure 3. Typical Junction Capacitance 55 50 120 25 IPK/IAV = 10 IPK/IAV = 5 20 SQUARE WAVE 15 dc 10 5 0 140 IPK/IAV = 20 TJ = 150°C 0 2 4 6 8 10 12 14 16 18 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 5. Current Derating Figure 6. Forward Power Dissipation http://onsemi.com 3 20 NTST30120CT, NTSJ30120CTG, NTSB30120CT−1G, NTSB30120CTG, NTSB30120CTT4G TYPICAL CHARACTERISITICS R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) 10 1 50% Duty Cycle 20% 0.1 10% 5% 2% Single Pulse 1% 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 t, Pulse Time (sec) 1 10 100 1000 Figure 7. Typical Transient Thermal Response for NTST30120CT and NTSB30120CT−1G R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) 10 50% Duty Cycle 1 20% 0.1 10% 5% 2% 1% 0.01 Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 100 1000 t, Pulse Time (sec) R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) Figure 8. Typical Transient Thermal Response for NTSJ30120CTG 1 50% Duty Cycle 0.1 20% 10% 5% 2% 1% 0.01 0.000001 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 t, Pulse Time (sec) 1 10 Figure 9. Typical Transient Thermal Response for NTSB30120CTG http://onsemi.com 4 NTST30120CT, NTSJ30120CTG, NTSB30120CT−1G, NTSB30120CTG, NTSB30120CTT4G ORDERING INFORMATION Package Shipping NTST30120CTG Device TO−220AB (Pb−Free) 50 Units / Rail NTSJ30120CTG TO−220FP (Halide−Free) 50 Units / Rail NTSB30120CT−1G I2PAK (Pb−Free) 50 Units / Rail NTSB30120CTG D2PAK (Pb−Free) 50 Units / Rail NTSB30120CTT4G D2PAK (Pb−Free) 800 / Tape & Reel MARKING DIAGRAMS AYWW TS30120Cx AKA AYWW TS30120CG AKA AYWW TS30120CG AKA TO−220AB TO−220FP I2PAK A Y WW AKA x G H = Assembly Location = Year = Work Week = Polarity Designator = G or H = Pb−Free Package = Halide−Free Package http://onsemi.com 5 AYWW TS30120CG AKA D2PAK NTST30120CT, NTSJ30120CTG, NTSB30120CT−1G, NTSB30120CTG, NTSB30120CTT4G PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AF −T− B F T NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. SEATING PLANE C S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 6: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 ANODE CATHODE ANODE CATHODE TO−220 FULLPACK, 3−LEAD CASE 221AH ISSUE B A E B P E/2 0.14 M B A M SEATING PLANE A H1 A1 4 Q D C NOTE 3 1 2 3 L L1 3X 3X b2 c b 0.25 M B A M C A2 e http://onsemi.com 6 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR UNCONTROLLED IN THIS AREA. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE MEASURED AT OUTERMOST EXTREME OF THE PLASTIC BODY. 5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00. DIM A A1 A2 b b2 c D E e H1 L L1 P Q MILLIMETERS MIN MAX 4.30 4.70 2.50 2.90 2.50 2.70 0.54 0.84 1.10 1.40 0.49 0.79 14.70 15.30 9.70 10.30 2.54 BSC 6.70 7.10 12.70 14.73 --2.80 3.00 3.40 2.80 3.20 NTST30120CT, NTSJ30120CTG, NTSB30120CT−1G, NTSB30120CTG, NTSB30120CTT4G PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. C E −B− V W 4 1 2 A S 3 −T− SEATING PLANE DIM A B C D E F G H J K L M N P R S V K J G D 3 PL 0.13 (0.005) W H M T B M VARIABLE CONFIGURATION ZONE N R P U L M INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 L M L M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 http://onsemi.com 7 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 NTST30120CT, NTSJ30120CTG, NTSB30120CT−1G, NTSB30120CTG, NTSB30120CTT4G PACKAGE DIMENSIONS I2PAK (TO−262) CASE 418D ISSUE D C E V −B− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 A W 1 2 DIM A B C D E F G H J K S V W 3 F −T− SEATING PLANE K S J G D 3 PL 0.13 (0.005) M T B H M INCHES MIN MAX 0.335 0.380 0.380 0.406 0.160 0.185 0.026 0.035 0.045 0.055 0.122 REF 0.100 BSC 0.094 0.110 0.013 0.025 0.500 0.562 0.390 REF 0.045 0.070 0.522 0.551 STYLE 3: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 8.51 9.65 9.65 10.31 4.06 4.70 0.66 0.89 1.14 1.40 3.10 REF 2.54 BSC 2.39 2.79 0.33 0.64 12.70 14.27 9.90 REF 1.14 1.78 13.25 14.00 ANODE CATHODE ANODE CATHODE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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