PANJIT PJE138K

PPJE138K
50V N-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
50 V
350mA
Current
SOT-523
Unit : inch(mm)
Features

RDS(ON) , VGS@10V, ID@500mA<1.6Ω

RDS(ON) , [email protected], ID@200mA<2.5Ω

RDS(ON) , [email protected], ID@100mA<4.5Ω

Advanced Trench Process Technology

Specially Designed for Battery Operated Systems, SolidState Relays Drivers: Relay, Displays, Memories, etc.

ESD Protected 1.5KV HBM

Lead free in comply with EU RoHS 2011/65/EU directives.

Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data

Case: SOT-523 Package

Terminals : Solderable per MIL-STD-750, Method 2026

Approx. Weight: 0.00007 ounces, 0.002 grams
o
Maximum Ratings and Thermal Characteristics (TA=25 C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNITS
Drain-Source Voltage
VDS
50
V
Gate-Source Voltage
VGS
+20
V
ID
350
mA
IDM
1200
mA
223
mW
1.8
mW/ oC
Continuous Drain Current
Pulsed Drain Current
o
Power Dissipation
TA=25 C
Derate above 25oC
Operating Junction and Storage Temperature Range
PD
TJ,TSTG
-55~150
RθJA
560
o
C
Thermal resistance
-
Junction to Ambient (Note 3)
April 11,2013-REV.00
o
C/W
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PPJE138K
o
Electrical Characteristics (TA=25 C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNITS
Static
Drain-Source Breakdown Voltage
BVDSS
VGS=0V,ID=250uA
50
-
-
V
Gate Threshold Voltage
VGS(th)
VDS=VGS, ID=250uA
0.8
1.0
1.5
V
VGS=10V,ID=500mA
-
0.96
1.6
VGS=4.5V,ID=200mA
-
1.25
2.5
VGS=2.5V,ID=100mA
-
2.73
4.5
Drain-Source On-State Resistance
RDS(on)
Ω
Zero Gate Voltage Drain Current
IDSS
VDS=50V,VGS=0V
-
0.01
1
uA
Gate-Source Leakage Current
IGSS
VGS=+20V,VDS=0V
-
+3.0
+10
uA
-
0.63
1
-
0.2
-
-
0.23
-
-
40.8
50
-
2.8
10
-
2.7
5
-
2.2
5
19.2
38
6.2
12
-
23
50
-
-
500
mA
0.86
1.5
V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS=25V, ID=250mA,
VGS=4.5V (Note 1,2)
VDS=25V, VGS=0V,
f=1.0MHZ
nC
pF
Switching
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
VDD=25V, ID=500mA,
VGS=10V,
RG=6Ω
(Note 1,2)
ns
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
IS
VSD
--IS=500mA, VGS=0V
NOTES:
1. Pulse width<300us, Duty cycle<2%
2.
3.
Essentially independent of operating temperature typical characteristics.
RΘJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins. mounted on a 1 inch square pad of copper
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PPJE138K
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
Fig.6 Body Dlode Characterlslcs
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PPJE138K
TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate-Charge Characteristics
Fig.8 Breakdown Voltage Variation vs. Temperature
Fig.9 Threshold Voltage Variation with Temperature.
Fig.10 Capacitance vs. Drain-Source Voltage.
April 11,2013-REV.00
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PPJE138K
PART NO PACKING CODE VERSION
PART NO PACKING
Package Type
Packing type
Marking
Version
SOT-523
4K pcs / 7” reel
8KT
Halogen free
CODE VERSION
PJE138K_R1_00001
MOUNTING PAD LAYOUT
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PPJE138K
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April 11,2013-REV.00
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