STMICROELECTRONICS STH13009

STH13009
High voltage fast-switching NPN power transistor
Preliminary data
Features
.
■
High voltage capability
■
Low spread of dynamic parameters
■
Very high switching speed
Applications
■
Switching mode power supplies
1
3
TO-220
Description
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds anh high voltage capability.
It uses a Hollow Emitter structure to enhance
switching speeds.
Table 1.
2
Figure 1.
Internal schematic diagram
Device summary
Order code
Marking
Package
Packaging
STH13009
H13009
TO-220
Tube
October 2007
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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9
Absolute maximum ratings
1
Absolute maximum ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCEV
Collector-emitter voltage (VBE = -1.5V)
700
V
VCEO
Collector-emitter voltage (IB = 0)
400
V
VEBO
Emitter-base voltage (IC = 0)
12
V
Collector current
12
A
Collector peak current (tp < ms)
24
A
Base current
6
A
Base peak current (tp < ms)
12
A
PTOT
Total dissipation at Tcase = 25°C
100
W
Tstg
Storage temperature
-65 to 150
°C
150
°C
IC
ICM
IB
IBM
TJ
Table 3.
Symbol
Rthj-case
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STH13009
Max. operating junction temperature
Thermal data
Parameters
Thermal resistance junction-case
__max
Value
Unit
1.25
°C/W
STH13009
2
Electrical characteristics
Electrical characteristics
(Tcase = 25°C; unless otherwise specified)
Table 4.
Symbol
ICEV
IEBO
Electrical characteristics
Parameter
Collector cut-off current
VCE = 700 V
(V BE = -1.5V)
VCE = 700 V
Emitter cut-off current
(IC = 0)
VEB = 10 V
Collector-emitter
VCEO(sus)(1) sustaining voltage
(IB = 0)
VCE(sat)(1)
VBE(sat)(1)
hFE(1)
ts
tf
Test conditions
Collector-emitter
saturation voltage
Base-emitter saturation
voltage
DC current gain
Inductive load
Storage time
Fall time
Min.
TC = 100°C
IC = 10 mA
Max.
Unit
10
500
µA
10
µA
400
IC = 4 A __
IB = 0.8 A
IC = 5 A __
IB = 1 A
IC = 8 A __
IB = 1.6 A
IC = 12 A _
IB = 2.4 A
IC = 5 A __
IB = 1 A
IC = 8 A __
IB = 1.6 A
IC = 5 A
_ VCE =5 V
18
_ VCE =5 V
11
IC = 5A
IB2 = -2 A
µA
V
0.2
0.25
0.35
0.6
IC = 8 A
VCC = 250 V
IB1= 1 A
L = 200 µH
Typ.
0.5
0.6
1
2
V
V
V
V
1.2
1.6
V
V
30
23
1.7
100
2.5
140
µs
ns
1. Pulsed duration = 300 ms, duty cycle ≥1.5%.
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Electrical characteristics
2.1
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STH13009
Electrical characteristic (curves)
Figure 2.
Safe operating area
Figure 3.
Derating curve
Figure 4.
DC current gain
Figure 5.
DC current gain
Figure 6.
Collector-emitter saturation
voltage
Figure 7.
Base-emitter saturation
voltage
STH13009
Electrical characteristics
Figure 8.
2.2
Inductive load switching time Figure 9.
Reverse biased safe
operating area
Test circuit
Figure 10. Inductive load switching test circuit
1) Fast electronic switch
2) Non-inductive resistor
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Package mechanical data
3
STH13009
Package mechanical data
In order to meet environmental requirements, ST offers these devices in
ECOPACK® packages. These packages have a Lead-free second level
interconnect . The category of second level interconnect is marked on the
package and on the inner box label, in compliance with JEDEC Standard JESD97.
The maximum ratings related to soldering conditions are also marked on the inner
box label. ECOPACK is an ST trademark. ECOPACK specifications are available
at: www.st.com
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STH13009
Package mechanical data
TO-220 Mechanical data
DIM.
mm.
MIN.
TYP
MAX.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.70
c
0.49
0.70
D
15.25
15.75
D1
1.27
E
10
e
2.40
10.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
øP
3.75
3.85
Q
2.65
2.95
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Revision history
STH13009
4
Revision history
Table 5.
8/9
Document revision history
Date
Revision
15-Oct-2007
1
Changes
Initial Release
STH13009
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