STMICROELECTRONICS T835T-6I

T8T
Snubberless™, logic level and standard 8 A Triacs
Features
A2
■
Medium current Triac
■
High static and dynamic commutation
■
Low thermal resistance with clip bonding
■
Packages is RoHS (2002/95/EC) compliant
■
600 V VRM
■
UL certified (ref. file E81734)
G
A1
A1
A2
Applications
■
Value sensitive application
■
General purpose ac line load switching
■
Motor control circuits in power tools
■
Small home appliances, lighting
■
Inrush current limiting circuits
■
Overvoltage crowbar protection
G
TO-220AB insulated
(T8xxT-6I)
Table 1.
Description
Available in through-hole, the T8T series of Triacs
can be used as on/off or phase angle control
function in general purpose ac switching where
high commutation capability is required.
Device summary
Order code
Symbol
Value
T810T-6I
IGT 3Q
logic level
10 mA
T820T-6I
T835T-6I
IGT 3Q
Snubberless
20 / 35 mA
T825T-6I
IGT 4Q
standard
25 mA
This series can be designed-in in many value
sensitive appliances thanks to the parameters
guidance provided in the following pages.
Provides insulation rated at 2500 V rms
(TO-220AB insulated package).
TM: Snubberless is a trademark of STMicroelectronics
September 2011
Doc ID 16192 Rev 3
1/9
www.st.com
9
Characteristics
T8T
1
Characteristics
Table 2.
Absolute ratings (limiting values; Tj = 25 °C, unless otherwise specified)
Symbol
IT(RMS)
ITSM
I ²t
dI/dt
VDSM /
VRSM
IGM
PG(AV)
Tstg
Tj
2/9
Parameter
Value
Unit
Tc = 97 °C
8
A
F = 50 Hz
tp = 20 ms
60
F = 60 Hz
tp = 16.7 ms
63
tp = 10 ms
26
A² s
On-state rms current (full sine wave)
Non repetitive surge peak on-state current
(full cycle, Tj initial = 25 °C)
I²t Value for fusing
A
Critical rate of rise of on-state current IG = 2 x IGT
tr ≤ 100 ns
F = 60 Hz
Tj = 125 °C
50
A/µs
Non repetitive surge peak off-state
voltage
tp = 10 ms
Tj = 25 °C
VDRM/VRRM
+ 100
V
Peak gate current
tp = 20 µs
Tj = 125 °C
4
A
Tj = 125 °C
1
W
Storage junction temperature range
- 40 to + 150
°C
Operating junction temperature range
- 40 to + 125
°C
Average gate power dissipation
Doc ID 16192 Rev 3
T8T
Characteristics
Table 3.
Electrical characteristics (Tj = 25 °C, unless otherwise specified)
T8xxT
Symbol
IGT (1)
Test conditions
Quadrant
Unit
T810T
T820T
T825T
T835T
10
20
25
35
I - II - III
VD = 12 V, RL = 30 Ω
MAX.
mA
IV
40
VGT
VD = VDRM, RL = 30 Ω,
Tj = 25 °C
ALL
MAX.
1.3
V
VGD
VD = VDRM, RL = 3.3 kΩ,
Tj = 125 °C
ALL
MIN.
0.2
V
IH (2)
IT = 500 mA
MAX.
I - III
IL
IV
IG = 1.2 IGT
VD = 67% VDRM, gate open
Tj = 125 °C
Tj = 150 °C(3)
30
40
20
35
40
50
40
25
40
70
70
100
750
500
2000
50
500
300
1000
V/µs
5.4
Tj = 125 °C
(dV/dt)c = 10 V/µs
2
Without snubber
4.5
3.4
8
MIN.
A/ms
2.5
(dV/dt)c = 0.1 V/µs
(dV/dt)c = 10 V/µs
mA
mA
MIN.
(dV/dt)c = 0.1 V/µs
(di/dt)c (2)
25
MAX.
II
dV/dt (2)
15
Tj = 150 °C(3)
1
Without snubber
2
2
6.5
1. Minimum IGT is guaranted at 5% of IGT max.
2. For both polarities of A2 referenced to A1.
3. Derating information for excess temperature above Tj max.
Table 4.
Static characteristics
Symbol
VT (1)
VTO (1)
RD
(1)
IDRM
IRRM
Test conditions
Value
Unit
ITM = 11.3 A, tp = 380 µs
Tj = 25 °C
MAX.
1.60
V
Threshold voltage
Tj = 125 °C
MAX.
0.87
V
Dynamic resistance
Tj = 125 °C
MAX.
60
mΩ
5
µA
Tj = 25 °C
VDRM = VRRM
MAX.
Tj = 125 °C
Tj = 150 °C(2)
VD = 0.9 x VDRM
1
mA
TYP.
1.9
1. For both polarities of A2 referenced to A1.
2. Derating information for excess temperature above Tj max.
Doc ID 16192 Rev 3
3/9
Characteristics
Table 5.
T8T
Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case (AC)
2.8
°C/W
Rth(j-a)
Junction to ambient (DC)
60
°C/W
Figure 1.
Maximum power dissipation versus Figure 2.
rms on-state current
P(W)
10
IT(RMS)(A)
10
9
α = 180°
9
α = 180°
8
On-state rms current versus case
temperature
8
7
7
6
6
5
5
4
4
3
3
2
2
180°
1
1
IT(RMS)(A)
0
0
1
2
Figure 3.
2.5
3
TC(°C)
0
4
5
6
7
0
8
On-state rms current versus
ambient temperature
(free air convection)
25
Figure 4.
IT(RMS)(A)
1.0E+00
50
75
100
125
Relative variation of thermal
impedance versus pulse duration
K = [Zth / Rth]
Zth(j-c)
α = 180°
2.0
Zth(j-a)
TO-220AB
1.5
1.0E-01
1.0
TO-220AB
0.5
Ta(°C)
0.0
0
Figure 5.
100
25
50
75
100
125
On-state characteristics
(maximum values)
1.0E-02
1.0E-03
Figure 6.
ITM(A)
70
Tp(s)
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
Surge peak on state current versus
number of cycles
ITSM(A)
60
t = 20 ms
Non repetitive
Tj initial = 25 °C
50
One cycle
40
10
30
Repetitive
Tc = 97 °C
20
VTM(V)
1
0
4/9
Tjmax:
Vto = 0.87 V
Rd =6 0 mΩ
1
2
10
Number of cycles
0
3
4
5
1
Doc ID 16192 Rev 3
10
100
1000
T8T
Characteristics
Figure 7.
1000
Non repetitive surge peak on-state Figure 8.
current for a sinusoidal
ITSM(A), I²t (A²s)
3.0
Relative variation of gate trigger
current and gate trigger voltage
versus junction temperature
IGT, VGT[Tj] / IGT, VGT[Tj = 25 °C]
typical values
Tj initial = 25 °C
2.5
ITSM
dl /dt limitation: 50 A / µs
IGT Q3
IGT Q1-Q2
2.0
1.5
100
1.0
IGT Q1-Q2-Q3
I²t
0.5
tp(ms)
pulse with width tp<10 ms, and corresponding value of I²t
10
0.01
0.10
Figure 9.
2.0
1.00
10.00
Tj(°C)
0.0
-50
-25
0
25
50
75
100
125
Relative variation of holding
Figure 10. Relative variation of static dV/dt
current and latching current versus
immunity versus junction
junction temperature
temperature
IH, IL[Tj] / IH, IL[Tj = 25 °C]
7
typical values
dV / dt [Tj] / dV / dt [Tj = 125 °C]
VD = VR = 402 V
6
1.5
5
4
1.0
3
IL
2
0.5
IH
1
Tj(°C)
0.0
-50
-25
0
25
50
75
100
125
Figure 11. Relative variation of critical rate of
decrease of main current versus
junction temperature
6
Tj(°C)
0
(dl / dt)c [Tj] / (dl / dt)c [Tj = 125 °C]
25
50
75
100
125
Figure 12. Relative variation of leakage
current versus junction
temperature
1.0E+00
IDRM/IRRM [Tj; VDRM / VRRM] / IDRM/IRRM
[Tj = 125 °C; 600 V]
VDRM = VRRM = 600 V
5
4
VDRM = VRRM = 400 V
1.0E-01
3
2
VDRM = VRRM = 200 V
1.0E-02
1
for different values of blocking voltage
Tj(°C)
0
25
50
75
100
125
1.0E-03
25
Doc ID 16192 Rev 3
Tj(°C)
50
75
100
125
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Ordering information scheme
2
T8T
Ordering information scheme
Figure 13. Ordering information scheme
T
TRIAC
Current
8=8A
Sensitivity
10 = 10 mA
20 = 20 mA
25 = 25 mA
35 = 35 mA
Application specific
Voltage
6 = 600 V
Package
I = TO-220AB-Ins.
6/9
Doc ID 16192 Rev 3
8
10
T
-
6
I
T8T
3
Package mechanical data
Package mechanical data
●
Epoxy meets UL94, V0
●
Lead-free packages
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Table 6.
TO-220AB Insulated dimensions
Dimensions
Ref.
Millimeters
Min.
A
15.20
a1
C
B
ØI
F
A
Max.
Min.
Typ.
15.90 0.598
3.75
Max.
0.625
0.147
a2
13.00
14.00 0.511
0.551
B
10.00
10.40 0.393
0.409
b1
0.61
0.88
0.024
0.034
b2
1.23
1.32
0.048
0.051
C
4.40
4.60
0.173
0.181
c1
0.49
0.70
0.019
0.027
c2
2.40
2.72
0.094
0.107
e
2.40
2.70
0.094
0.106
F
6.20
6.60
0.244
0.259
ØI
3.75
3.85
0.147
0.151
I4
15.80 16.40 16.80 0.622 0.646 0.661
L
2.65
2.95
0.104
0.116
l2
1.14
1.70
0.044
0.066
l3
1.14
1.70
0.044
0.066
b2
L
Typ.
Inches
I4
l3
c2
a1
l2
a2
M
b1
c1
e
M
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0.102
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Ordering information
4
Ordering information
Table 7.
5
Ordering information
Order code
Marking
T810T-6I
T810T-6I
T820T-6I
T820T-6I
T825T-6I
T825T-6I
T835T-6I
T835T-6I
Package
Weight
Base qty
Delivery mode
TO-220AB-Ins.
2.3 g
50
Tube
Revision history
Table 8.
8/9
T8T
Document revision history
Date
Revision
Changes
10-Sep-2009
1
First issue.
18-Jan-2010
2
Updated pag.1.
20-Sep-2011
3
Updated: Features.
Doc ID 16192 Rev 3
T8T
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