UNISONIC TECHNOLOGIES CO., LTD MMDT3946 Preliminary DUAL TRANSISTOR COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR DESCRIPTION The UTC MMDT3946 is a complementary NPN/PNP small signal surface mount transistor. It’s suitable for low power amplification and switch. FEATURES * Epitaxial Planar Die Construction * Extremely-Small Surface Mount Package ORDERING INFORMATION Ordering Number Lead Free Halogen Free MMDT3946L-AL6-R MMDT3946G-AL6-R MMDT3946L-AL6-R Package Packing SOT-363 Tape Reel (1)Packing Type (1) R: Tape Reel (2)Package Type (2) AL6: SOT-363 (3)Lead Free (3) G: Halogen Free, L: Lead Free www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 of 5 QW-R218-015.a MMDT3946 Preliminary DUAL TRANSISTOR MARKING PIN CONFIGURATION C2 B1 E1 6 5 4 1 2 3 E2 B2 C1 E1,B1,C1=PNP3906 Section E2,B2,C2=NPN3904 Section UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R218-015.a MMDT3946 Preliminary DUAL TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified.) TR1(PNP) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5.0 V Collector Current-Continuous IC -200 mA Power Dissipation PD 200 mW Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. TR2(NPN) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PD TJ TSTG RATINGS 60 40 6.0 200 200 +150 -55~+150 UNIT V V V mA mW °C °C RATINGS 625 UNIT °C/W THERMAL DATA (TA=25°C, unless otherwise specified.) PARAMETER Junction to Ambient UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA 3 of 5 QW-R218-015.a MMDT3946 Preliminary DUAL TRANSISTOR ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified.) TR1(PNP) PARAMETER OFF CHARACTERISTICS (Note 1) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 1) DC Current Gain SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL hEF Collector-Emitter Saturation Voltage VCE(SAT) Base-Emitter Saturation Voltage VBE(SAT) SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product Noise Figure COBO CIBO hIE hRE hFE hOE fT NF TEST CONDITIONS IC=-10μA, IE=0 IC=-1.0mA, IB=0 IE=-10μA, IC=0 VCE=-30V, VEB(OFF)=-3.0V VCE=-30V, VEB(OFF)=-3.0V -40 -40 -5.0 IC=-100µA, VCE=-1.0V IC=-1.0mA, VCE=-1.0V IC=-10mA, VCE=-1.0V IC=-50mA, VCE=-1.0V IC=-100mA, VCE=-1.0V IC=-10mA, IB=-1.0mA IC=-50mA, IB=-5.0mA IC=-10mA, IB=-1.0mA IC=-50mA, IB=-5.0mA 60 80 100 60 30 VCE=10V, IC=1.0mA, f=1.0kHz VCE=-20V, IC=-10mA, f=100MHz VCE=-5.0V, IC=-100μA, RS=1.0kΩ, f=1.0kHz www.unisonic.com.tw TYP MAX UNIT -50 -50 -0.65 VCB=-5.0V, f=1.0MHz, IE=0 VEB=-0.5V, f=1.0MHz, IC=0 SWITCHING CHARACTERISTICS Delay Time tD VCC=-3.0V, IC=-10mA, V Rise Time tR BE(OFF)=0.5V, IB1=-1.0mA VCC=-3.0V, IC=-10mA, Storage Time tS IB1=IB2=-1.0mA Fall Time tF Note: 1. Short duration pulse test used to minimize self-heating effect. UNISONIC TECHNOLOGIES CO., LTD MIN 2.0 0.1 100 3.0 250 V V V nA nA 300 -0.25 -0.40 -0.85 -0.95 V V 4.5 pF 10 pF 12 kΩ 10 ×10-4 400 60 μS MHz 4.0 dB 35 35 225 75 ns ns ns ns 4 of 5 QW-R218-015.a MMDT3946 Preliminary DUAL TRANSISTOR ELECTRICAL CHARACTERISTICS(Cont.)(TA=25°C,unless otherwise specified.) TR2(NPN) PARAMETER OFF CHARACTERISTICS (Note 1) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 1) DC Current Gain SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL hFE Collector-Emitter Saturation Voltage VCE(SAT) Base-Emitter Saturation Voltage VBE(SAT) SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product Noise Figure COBO CIBO hIE hRE hFE hOE fT NF TEST CONDITIONS MIN IC=10μA, IE=0 IC=1.0mA, IB=0 IE=10μA, IC=0 VCE=30V, VEB(OFF)=3.0V VCE=30V, VEB(OFF)=3.0V 60 40 5.0 IC=100µA, VCE=1.0V IC=1.0mA, VCE=1.0V IC=10mA, VCE=1.0V IC=50mA, VCE=1.0V IC=100mA, VCE=1.0V IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA 40 70 100 60 30 0.65 VCB=5.0V, f=1.0MHz, IE=0 VEB=0.5V, f=1.0MHz, IC=0 VCE=10V, IC=1.0mA, f=1.0kHz VCE=20V, IC=20mA, f=100MHz VCE=5.0V, IC=100μA, RS=1.0kΩ, f=1.0kHz SWITCHING CHARACTERISTICS Delay Time tD VCC=3.0V, IC=10mA, V Rise Time tR BE(OFF)=-0.5V, IB1=1.0mA VCC=3.0V, IC=10mA, Storage Time tS IB1=IB2=1.0mA Fall Time tF Note: 1. Short duration pulse test used to minimize self-heating effect. 1.0 0.5 100 1.0 300 TYP MAX UNIT 6.0 50 50 V V V nA nA 300 0.20 0.30 0.85 0.95 V V 4.0 pF 8.0 pF 10 kΩ 8.0 ×10-4 400 40 μS MHz 5.0 dB 35 35 200 50 ns ns ns ns UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R218-015.a