2SD1803L

UNISONIC TECHNOLOGIES CO., LTD
2SD1803
NPN SILICON TRANSISTOR
HIGH CURRENT SWITCHING
APPLICATION

DESCRIPTION
The UTC 2SD1803 applies to relay drivers, high-speed
inverters, converters, and other general high-current switching
applications.

FEATURES
*Low Collector-To-Emitter Saturation Voltage.
*High Current And High fT.
*Excellent Linearity Of hFE.
*Fast Switching Time.

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
2SD1803L-x-TM3-T
2SD1803G-x-TM3-T
TO-251
2SD1803L-x-TN3-R
2SD1803G-x-TN3-R
TO-252
2SD1803G-x-K08-5060-R DFN-8(5×6)
Note: Pin Assignment: C: Collector B: Base
E: Emitter

1
B
B
E
2
C
C
E
Pin Assignment
3 4 5 6 7
E E E B C C C
8
C
Packing
Tube
Tape Reel
Tape Reel
MARKING
TO-251 / TO-252
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Copyright © 2015 Unisonic Technologies Co., Ltd
DFN-8(5×6)
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2SD1803

NPN SILICON TRANSISTOR
PIN CONFIGURATION
DFN-8(5×6)
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2SD1803

NPN SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
RATINGS
UNIT
60
V
50
V
6
V
DC
5
Collector Current
A
PULSE
8
TA=25°C
1
Power Dissipation
W
PD
TC=25°C
20
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified.)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
C-E Saturation Voltage
B-E Saturation Voltage
Gain-Bandwidth Product
Output Capacitance
Turn-on Time
Storage Time
Fall Time

SYMBOL
VCBO
VCEO
VEBO
IC
ICM
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
VCE(SAT)
VBE(SAT)
fT
Cob
tON
tS
tF
TEST CONDITIONS
IC=10μA, IE=0
IC=1mA, RBE=
IE=10A, IC=0
VCB=40V, IE=0
VEB=4V, IC=0
VCE=2V, IC=0.5A
VCE=2V, IC=4A
IC=3A, IB=0.15A
IC=3A, IB=0.15A
VCE=5V, IC=1A
VCB=10V, f=1MHz
See Test Circuit
See Test Circuit
See Test Circuit
MIN
60
50
6
TYP
MAX
1
1
400
70
35
220
0.95
180
40
50
500
20
400
1.3
UNIT
V
V
V
μA
μA
mV
V
MHz
pF
ns
ns
ns
CLASSIFICATION OF hFE1
RANK
RANGE
Q
70 ~ 140
R
100 ~ 200
UNISONIC TECHNOLOGIES CO., LTD
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S
140 ~ 280
T
200 ~ 400
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2SD1803

NPN SILICON TRANSISTOR
TEST CIRCUIT
IB 1
INPUT
OUTPUT
RB
IB 2
RL
VR
50
+
100μ
+
470μ
25V
PW=20μS
Duty Cycle≦1%
-5V
Ic=10IB1=-10IB2=2A
(Unit : (resistance : , capacitance : F))
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2SD1803
■
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Ic -VCE
Ic -VCE
5
5
25mA
30mA
30mA
35mA
40mA
50mA 45mA
4
4
20mA
3
25mA
20mA
3
15mA
15mA
2
5mA
5mA
1
1
IB=0
0
0
0.4
0.8
1.2
1.6
10mA
2
10mA
IB=0
0
2.0
0
2
Collector to Emitter Voltage, VCE (V)
4
6
10
Collector to Emitter Voltage, VCE (V)
Ic -VBE
C
hFE -I c
6
1000
VCE=2V
VCE=2V
7
5
5
Ta=75 C
3
4
2
3
100
Ta=75 C
2
Ta=25 C
0.2
0.4
Ta=-25 C
3
Ta=-25 C
0
Ta=25 C
7
5
1
0
8
0.8
0.6
1.0
2
1.2
10
5 7 0.01
Base to Emitter Voltage, VBE (V)
2 3 5 7
0.1 2 3 5 71.0
2 3 5 7 10
Collector Current, IC (A)
fT -I c
Cob -VcB
5
1000
VCE=5V
7
f=1MHz
3
2
3
2
100
100
7
7
5
5
3
3
2
2
10
2 3 5 7 0.1
2 3
5 7
1.0
2 3
5 7
10
Colletcor Current, Ic (A)
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10
5 7 1.0
2
3
5 7 10
2
3
5 7 100
Colletcor to Base Voltage, VCB (V)
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2SD1803
NPN SILICON TRANSISTOR
TYPICAL CHARACTERICS(Cont.)
Base to Emitter
Saturation Voltage, VBE(sat) (V)
C
O
pe
t
ra
io
nT
25
c=
C
25
a=
nT
tio
ra
pe
O
C
Power Dissipation, PD (W)
D
C
D
Collector Current, IC (A)
Collector to Emitter
Saturation Voltage, VCE(sat) (mV)

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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