APT12060B2VR
APT12060LVR
1200V 20A 0.600W
POWER MOS V ®
B2VR
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
T-MAX™
TO-264
LVR
• Identical Specifications: T-MAX™ or TO-264 Package
• Faster Switching
D
• 100% Avalanche Tested
G
• Lower Leakage
S
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT12060
UNIT
1200
Volts
L
A
C
I
N
H
C N
E
T
O
I
D
T
E
A
C
M
N
R
A
O
V
F
AD IN
Drain-Source Voltage
20
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
625
Watts
Linear Derating Factor
5.0
W/°C
VGSM
PD
TJ,TSTG
80
-55 to 150
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
1
20
1
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
EAR
Volts
Amps
50
4
mJ
3000
STATIC ELECTRICAL CHARACTERISTICS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
1200
Volts
20
Amps
On State Drain Current
2
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
(VGS = 10V, 0.5 ID[Cont.])
TYP
MAX
0.600
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
25
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Ohms
µA
250
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
UNIT
±100
nA
4
Volts
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
8-2000
BVDSS
Characteristic / Test Conditions
rev B
Symbol
USA
405 S.W. Columbia Street
Bend, Oregon 97702 -1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
050-5949
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol
APT12060 B2VR - LVR
Characteristic
Test Conditions
MIN
TYP
Ciss
Input Capacitance
VGS = 0V
7580
Coss
Output Capacitance
VDS = 25V
610
Reverse Transfer Capacitance
f = 1 MHz
290
Crss
Qg
Qgs
td(on)
Turn-on Delay Time
tf
370
33
ID = 0.5 ID[Cont.] @ 25°C
170
VGS = 15V
18
Gate-Source Charge
Gate-Drain ("Miller ") Charge
td(off)
VGS = 10V
VDD = 0.5 VDSS
VDD = 0.5 VDSS
13
ID = ID[Cont.] @ 25°C
66
RG = 0.6W
14
Rise Time
Turn-off Delay Time
Fall Time
UNIT
pF
L
A
C
I
N
H
C N
E
T
O
I
D
T
E
A
C
M
N
R
A
O
V
F
D
N
A
I
Total Gate Charge
3
Qgd
tr
MAX
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
Characteristic / Test Conditions
Continuous Source Current
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
MIN
TYP
(Body Diode)
(Body Diode)
(VGS = 0V, IS = -ID[Cont.])
MAX
20
80
1.3
UNIT
Amps
Volts
t rr
Reverse Recovery Time (IS = -ID[Cont.], dl S /dt = 100A/µs)
1190
ns
Q rr
Reverse Recovery Charge (IS = -ID[Cont.], dl S /dt = 100A/µs)
25.5
µC
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RqJC
Junction to Case
RqJA
Junction to Ambient
TYP
MAX
0.20
40
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 15mH, R
temperature.
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
j
G
= 25W, Peak IL = 20A
APT Reserves the right to change, without notice, the specifications and information contained herein.
T-MAXTM (B2) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
TO-264 (L) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
Drain
Drain
20.80 (.819)
21.46 (.845)
4.50 (.177) Max.
050-5949
rev B
8-2000
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
19.81 (.780)
20.32 (.800)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
5.45 (.215) BSC
2-Plcs.
Gate
Drain
Source
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,256,583
2.29 (.090)
2.69 (.106)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
25.48 (1.003)
26.49 (1.043)
Dimensions in Millimeters and (Inches)
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
UNIT
°C/W