Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-9970 Features Description • Open Loop Feedback Amplifier The MSA-9970 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic high reliability package. This MMIC is designed with high open loop gain and is intended to be used with external resistive and reactive feedback elements to create a variety of special purpose gain blocks. • Performance Flexibility with User Selected External Feedback for: Broadband Minimum Ripple Amplifiers Low Return Loss Amplifiers Negative Gain Slope Amplifiers • Usable Gain to 6.0 GHz • 16.0 dB Typical Open Loop Gain at 1.0 GHz • 14.5 dBm Typical P1 dB at 1.0␣ GHz • Hermetic Gold-ceramic Microstrip Package Applications include very broadband, minimum ripple amplifiers with extended low frequency performance possible through the use of a high valued external feedback blocking capacitor; extremely well matched (–20 dB return loss) amplifiers; and negative gain slope amplifiers for flattening MMIC cascades. 70 mil Package The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. Typical Biasing Configuration USER SELECTABLE Cf Rf R bias VCC ≥ 10 V RFC (Optional) 4 C block C block 3 IN OUT MSA 1 2 Vd = 7.8 V 6-489 5965-9668E MSA-9970 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 80 mA 750 mW +13 dBm 200°C –65°C to 200°C Thermal Resistance[2,4]: θjc = 150°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 6.7 mW/°C for TC > 88°C. 4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information. Electrical Specifications[1], TA = 25°C Symbol GP Parameters and Test Conditions: Id = 35 mA, ZO = 50 Ω Power Gain[2] (|S21| 2) Units f = 0.1 GHz f = 1.0 GHz f = 4.0 GHz dB Min. Typ. Max. 14.5 8.0 17.5 16.0 9.0 17.5 10.0 P1 dB Output Power at 1 dB Gain Compression[2] f = 1.0 GHz dBm 14.5 IP3 Third Order Intercept Point[2] f = 1.0 GHz dBm 25.0 Vd Device Voltage dV/dT Device Voltage Temperature Coefficient V mV/°C 7.0 7.8 8.6 –16.0 Notes: 1. The recommended operating current range for this device is 25 to 45 mA. Typical performance as a function of current is on the following page. 2. Open loop value. Adding external feedback will alter device performance. 6-490 MSA-9970 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 35 mA) Freq. GHz S11 S21 Mag Ang dB S12 Mag Ang dB S22 Mag Ang Mag Ang k 0.02 .89 –1 17.5 7.51 179 –37.2 .014 0.05 .90 –3 17.5 7.47 177 –35.6 .017 0.1 .90 –6 17.4 7.45 174 –33.2 .022 0.2 .89 –12 17.4 7.43 168 –29.6 .033 0.4 .87 –24 17.2 7.27 156 –24.4 .061 0.6 .85 –36 17.0 7.06 145 –20.8 .091 0.8 .82 –47 16.6 6.78 134 –18.8 .115 1.0 .79 –59 16.2 6.49 124 –17.0 .141 1.5 .72 –86 15.3 5.79 100 –14.6 .186 2.0 .65 –113 14.2 5.10 77 –13.4 .215 2.5 .59 –133 13.0 4.45 61 –12.9 .227 3.0 .54 –155 11.6 3.79 42 –12.5 .236 3.5 .53 –174 10.3 3.28 26 –12.4 .239 4.0 .52 168 9.2 2.87 10 –12.5 .238 4.5 .53 152 8.0 2.51 –4 –12.6 .234 5.0 .55 140 6.9 2.21 –17 –12.8 .228 5.5 .55 130 5.8 1.94 –31 –13.2 .220 6.0 .55 121 4.6 1.70 –43 –13.6 .209 6.5 .56 114 3.5 1.50 –53 –13.8 .203 7.0 .56 107 2.6 1.34 –63 –14.0 .201 A model for this device is available in the DEVICE MODELS section. 4 34 43 61 63 58 52 44 29 16 7 –3 –14 –22 –30 –37 –44 –48 –54 –59 .93 .92 .93 .93 .91 .90 .87 .84 .74 .64 .57 .51 .45 .39 .34 .31 .30 .32 .37 .42 –1 –3 –6 –13 –27 –40 –53 –66 –96 –123 –143 –163 178 164 155 153 154 157 158 157 1.01 .83 .70 .39 .24 .21 .21 .24 .28 .34 .39 .46 .53 .59 .66 .72 .80 .88 .94 .97 Typical Performance, TA = 25°C (unless otherwise noted) 21 50 19 18 TC = +125°C TC = +25°C 40 T = –55°C C 17 P1 dB (dBm) 15 30 12 Id (mA) G p (dB) 15 I d = 45 mA 9 20 I d = 35 mA 13 11 6 10 0 .05 0 0.1 0.3 0.5 1.0 3.0 6.0 7 0 2 4 6 8 10 Vd (V) FREQUENCY (GHz) Figure 1. Open Loop Power Gain vs. Frequency, Id = 35 mA. 17 G p (dB) 0.1 GHz 1.0 GHz 16 G p (dB) 15 Gp 4.0 GHz P1 dB (dBm) 15 10 14 P1 dB 13 5 10 20 30 40 50 Id (mA) Figure 4. Open Loop Power Gain vs. Current. –55 –25 +25 +85 +125 TEMPERATURE (°C) Figure 5. Open Loop Output Power at 1 dB Gain Compression and Open Loop Power Gain vs. Case Temperature, f=1.0 GHz, Id = 35 mA. 6-491 0.1 0.2 0.3 0.5 1.0 2.0 4.0 FREQUENCY (GHz) Figure 2. Device Current vs. Voltage. 20 I d = 25 mA 9 3 Figure 3. Open Loop Output Power at 1 dB Gain Compression vs. Frequency. 70 mil Package Dimensions .040 1.02 4 GROUND .020 .508 RF OUTPUT AND BIAS RF INPUT 3 1 2 .004 ± .002 .10 ± .05 GROUND .070 1.70 .495 ± .030 12.57 ± .76 Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13 .035 .89 6-492