VFT150-50 VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The VFT150-50 is a N-Channel Enhancement Mode RF Power MOSFET Designed for AM/FM Power Amplifier Applications up to 175 MHz. PACKAGE STYLE .500 4L FLG .112x45° L A FULL R FEATURES: S D Ø.125 NOM. C • PG = 13.5 dB Typical at 175 MHz • 10:1 Load VSWR Capability • Omnigold™ Metalization System B S G E D G H F I J MAXIMUM RATINGS K DIM MINIMUM inches / mm MAXIMUM inches / mm A .220 / 5.59 .230 / 5.84 ID 16 A VDSS 125 V B C .245 / 6.22 .255 / 6.48 ± 30 V D .720 / 18.28 .7.30 / 18.54 VGS 300 W @ TC = 25 C -65 OC to +200 OC TJ O O T STG -65 C to +150 C θ JC 0.6 OC/W CHARACTERISTICS SYMBOL .970 / 24.64 .980 / 24.89 G .495 / 12.57 .505 / 12.83 H .003 / 0.08 .007 / 0.18 I .090 / 2.29 .110 / 2.79 J .150 / 3.81 .175 / 4.45 .980 / 24.89 1.050 / 26.67 L .280 / 7.11 ORDER CODE: ASI10709 NONE TC = 25 OC TEST CONDITIONS ID = 50 mA VDS = 50 V VDS = 0 V VDS = 10 V VDS = 10 V VGS = 0 V VGS = 20 V ID = 100 mA ID = 5 A Ciss Coss Crss VDS = 50 V VGS = 0 V ψ F K BV DSS IDSS IGSS VGS(th) gfs PG ηD .125 / 3.18 E O PDISS .125 / 3.18 MINIMUM TYPICAL MAXIMUM UNITS 125 VDD = 50 V IDQ = 250 mA Pout = 150 W VSWR = 10:1 AT ALL PHASE ANGLES 5.0 1.0 5.0 1.0 3,000 f = 1.0 MHz f = 175 MHz 13 45 V mA µA V mS 290 130 28 pF 13.5 55 dB % NO DEGRADATION IN OUTPUT POWER A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1